AP9994AGP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS(ON) 3.6mΩ ID G 190A S Description AP9994 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G TO-220(P) D S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current (Chip) 190 A 120 A 120 A 480 A ID@TC=25℃ ID@TC=100℃ Continuous Drain Current, V GS @ 10V 3 Continuous Drain Current, V GS @ 10V 3 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 250 W PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 1 201308131 AP9994AGP-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA 60 - - V VGS=10V, ID=40A - - 3.6 mΩ BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=40A - 110 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=40A - 110 176 nC Qgs Gate-Source Charge VDS=48V - 25 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 38 - nC td(on) Turn-on Delay Time VDS=30V - 27 - ns tr Rise Time ID=40A - 75 - ns td(off) Turn-off Delay Time RG=3.3Ω - 65 - ns tf Fall Time VGS=10V - 55 - ns Ciss Input Capacitance VGS=0V - 7000 11200 pF Coss Output Capacitance VDS=25V - 930 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 155 - pF Rg Gate Resistance f=1.0MHz - 2 4 Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V 2 Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V, - 50 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 80 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 120A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9994AGP-HF 320 200 240 T C =150 C 10V 9.0V 8.0V 7.0V V G =6.0V 160 ID , Drain Current (A) ID , Drain Current (A) o 10V 9.0V 8.0V 7.0V V G = 6.0V o T C =25 C 160 120 80 80 40 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 7 2.0 I D =40A V G =10V I D = 40A o T C = 25 C Normalized RDS(ON) RDS(ON) (mΩ) 6 5 4 1.6 1.2 0.8 3 0.4 2 3 4 5 6 7 8 9 -50 10 0 50 100 150 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 40 I D =250uA 1.6 T j =150 o C Normalized VGS(th) IS(A) 30 T j =25 o C 20 1.2 0.8 10 0.4 0.0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9994AGP-HF f=1.0MHz 12 10000 I D =40A V DS =48V 10 C iss 8 C (pF) VGS , Gate to Source Voltage (V) 8000 6 6000 4000 4 2000 2 C oss C rss 0 0 0 40 80 120 1 160 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1000 Normalized Thermal Response (Rthjc) Duty factor = 0.5 Operation in this area limited by RDS(ON) 100us ID (A) 100 1ms 10ms 10 T C =25 o C Single Pulse 100ms DC 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 0.00001 0.0001 V DS ,Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 240 VG ID , Drain Current (A) 200 QG 160 10V Limited by package QGS 120 QGD 80 40 Charge Q 0 25 50 75 100 T C , Case Temperature ( 125 o 150 C) Fig 11. Maximum Continuous Drain Current v.s. Case Temperature Fig 12. Gate Charge Waveform 4