isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF141 DESCRIPTION ·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·High Power,High Speed Applications APPLICATIONS ·Switching power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT 60 V ±20 V Drain Current-continuous@ TC=25℃ 27 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature 150 ℃ -55~150 ℃ MAX UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Ptot Tj Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc website：www.iscsemi.cn PDF pdfFactory Pro 1 www.fineprint.cn isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF141 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 60 VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 RDS(ON) Drain-Source On-stage Resistance IGSS TYPE MAX UNIT V 4.0 V VGS=10V; ID=15A 0.085 Ω Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=60V; VGS=0 250 uA VSD Diode Forward Voltage IS=27A; VGS=0 2.5 V Ciss Input Capacitance 1400 1600 120 300 550 800 VDS=25V; Crss Reverse Transfer Capacitance VGS=0V; pF fT=1MHz Coss tr Output Capacitance Rise Time 115 RGS=12.5Ω td(on) Turn-on Delay Time VGS =15V 20 ID=15A; tf Fall Time VDD=30V; ns 30 RL=50Ω td(off) Turn-off Delay Time isc website：www.iscsemi.cn PDF pdfFactory Pro 50 2 www.fineprint.cn isc & iscsemi is registered trademark