APTM20HM10F Full - Bridge MOSFET Power Module VDSS = 200V RDSon = 10mW max @ Tj = 25°C ID = 175A @ Tc = 25°C Application · · · · Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features · · · OUT1 G1 VBUS G2 0/VBUS S1 S2 S3 S4 G3 G4 OUT2 · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 175 131 700 ±30 10 694 89 50 2500 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM20HM10F– Rev 1 May, 2004 Symbol VDSS APTM20HM10F All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Test Conditions VGS = 0V, ID = 375µA Min 200 Typ Tj = 25°C Tj = 125°C Zero Gate Voltage Drain Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 10V, ID = 87.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 3 Max Unit V 375 1500 10 5 ±150 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 100V ID = 150A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v Eon Turn-on Switching Energy u Eoff Turn-off Switching Energy v nF nC 86 94 28 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 150A RG = 2.5W Rise Time Typ 13.7 4.36 0.2 224 56 ns 81 99 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω 926 µJ 910 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 150A, RG = 2.5Ω 1216 µJ 1062 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 150A IS = -150A VR = 133V diS/dt = 200A/µs Tj = 25°C Tj = 125°C Tj = 25°C 2.14 Tj = 125°C 5.8 Max 175 131 1.3 8 220 420 Unit A V V/ns ns µC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR £ VDSS Tj £ 150°C IS £ - 150A di/dt £ 700A/µs APT website – http://www.advancedpower.com 2–6 APTM20HM10F– Rev 1 May, 2004 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w APTM20HM10F Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.18 150 125 100 5 3.5 280 Unit °C/W V °C N.m g APT website – http://www.advancedpower.com 3–6 APTM20HM10F– Rev 1 May, 2004 Package outline APTM20HM10F Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.14 0.7 0.12 0.5 0.1 0.08 0.3 0.06 Single Pulse 0.04 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 9V 400 7.5V 300 7V 200 6.5V 6V 100 ID, Drain Current (A) 300 200 TJ=25°C 100 TJ=125°C 5.5V 0 0 0 5 10 15 20 25 2 VDS, Drain to Source Voltage (V) Normalized to VGS=10V @ 87.5A 1.15 1.1 VGS=10V 1.05 1 VGS=20V 0.95 0.9 0 40 80 120 160 200 ID, Drain Current (A) 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.2 240 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance T J=-55°C 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4–6 APTM20HM10F– Rev 1 May, 2004 ID, Drain Current (A) VGS=15&10V Transfert Characteristics 400 500 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area limited by RDSon 100µs 100 1ms 10ms 10 0.7 DC line Single pulse TJ=150°C 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID= 87.5A 1000 1.2 1.1 ON resistance vs Temperature 2.5 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=150A 10 TJ=25°C VDS=100V 8 VDS=160V 6 4 2 0 0 APT website – http://www.advancedpower.com 50 100 150 200 250 Gate Charge (nC) 5–6 APTM20HM10F– Rev 1 May, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20HM10F APTM20HM10F Rise and Fall times vs Current 90 160 80 140 td(off) 70 VDS=133V RG=2.5Ω TJ=125°C L=100µH 60 50 40 30 100 80 tr 60 20 10 0 0 50 100 150 200 250 300 0 50 ID, Drain Current (A) Eon Eoff 1 0.5 0 250 300 VDS=133V ID=150A TJ=125°C L=100µH 2.5 Eoff Eon 2 1.5 1 50 100 150 200 250 0 300 ID, Drain Current (A) 250 200 150 100 50 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) IDR, Reverse Drain Current (A) VDS=133V D=50% RG=2.5Ω TJ=125°C 300 10 15 20 Gate Resistance (Ohms) Operating Frequency vs Drain Current 350 5 Source to Drain Diode Forward Voltage 1000 100 TJ=150°C TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20HM10F– Rev 1 May, 2004 0 Frequency (kHz) 200 3 Switching Energy (mJ) Eon and Eoff (mJ) 1.5 150 Switching Energy vs Gate Resistance Switching Energy vs Current VDS=133V RG=2.5Ω TJ=125°C L=100µH 100 ID, Drain Current (A) 2.5 2 tf 40 td(on) 20 VDS=133V RG=2.5Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) and td(off) (ns) Delay Times vs Current