DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING • Very high power gain PIN DESCRIPTION • Low noise figure 1 emitter • High transition frequency 2 base • Emitter is thermal lead 3 emitter • Low feedback capacitance. 4 collector APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) 3 4 • Satellite television tuners (SATV) 2 1 • High frequency oscillators. Top view handbook, halfpage • Radar detectors • Pagers DESCRIPTION MSB842 Marking code: P4. NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 10 V VCEO collector-emitter voltage open base − − 4.5 V IC collector current (DC) − 10 12 mA Ptot total power dissipation Ts ≤ 110 °C − − 54 mW hFE DC current gain IC = 10 mA; VCE = 2 V; Tj = 25 °C 50 80 120 Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz − 45 − fF fT transition frequency IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C − 22 − GHz Gmax maximum power gain IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C − 21 − dB F noise figure IC = 1 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt 1.2 − dB − CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1998 Mar 11 2 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 10 V VCEO collector-emitter voltage open base − 4.5 V VEBO emitter-base voltage open collector − 1 V IC collector current (DC) − 12 mA Ptot total power dissipation Ts ≤ 110 °C; note 1; see Fig.2 − 54 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point MGD960 60 handbook, halfpage Ptot (mW) 40 20 0 0 40 80 120 Ts (°C) 160 Fig.2 Power derating curve. 1998 Mar 11 3 VALUE UNIT 750 K/W Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 2.5 µA; IE = 0 10 − − V V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 4.5 − − V V(BR)EBO emitter-base breakdown voltage IE = 2.5 µA; IC = 0 1 − − V ICBO collector-base leakage current IE = 0; VCB = 4.5 V − − 15 nA hFE DC current gain IC = 10 mA; VCE = 2 V; see Fig.3 50 80 120 Cc collector capacitance IE = ie = 0; VCB = 2 V; f = 1 MHz − 220 − fF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 400 − fF Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz; see Fig.4 − 45 − fF fT transition frequency IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C; see Fig.5 − 22 − GHz Gmax maximum power gain; note 1 IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C; see Figs 7 and 8 − 21 − dB insertion power gain IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C; see Fig.8 − 18 − dB noise figure IC = 1 mA; VCE = 2 V; − f = 900 MHz; ΓS = Γopt; see Fig.13 0.9 − dB IC = 1 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt; see Fig.13 − 1.2 − dB S 21 2 F PL1 output power at 1 dB gain compression IC = 10 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2 − 5 − dBm ITO third order intercept point IC = 10 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2 − 15 − dBm Notes 1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8. 2. ZS is optimized for noise; ZL is optimized for gain. 1998 Mar 11 4 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W MGG717 120 MGG718 100 handbook, halfpage handbook, halfpage Cre hFE (fF) 100 80 80 (1) (2) (3) 60 60 40 40 20 20 0 0 0 4 8 12 IC (mA) 16 0 1 (1) VCE = 3 V. (2) VCE = 2 V. (3) VCE = 1 V. IC = 0; f = 1 MHz. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MGG719 25 2 3 4 Feedback capacitance as a function of collector-base voltage; typical values. MGG720 30 handbook, halfpage 5 VCB (V) handbook, halfpage fT (GHz) MSG (dB) 20 20 15 10 10 5 0 1 10 IC (mA) 0 102 0 4 VCE = 2 V; f = 2 GHz; Tamb = 25 °C. VCE = 2 V; f = 900 MHz. Fig.5 Fig.6 Transition frequency as a function of collector current; typical values. 1998 Mar 11 5 8 12 IC (mA) 16 Maximum stable gain as a function of collector current; typical values. Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W MGG721 30 MGG722 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 40 MSG MSG Gmax 20 30 S21 20 10 10 0 0 0 4 8 12 16 102 10 IC (mA) VCE = 2 V; f = 2 GHz. IC = 10 mA; VCE = 2 V. Fig.7 Fig.8 Gain as a function of collector current; typical values. 103 Gain as a function of frequency; typical values. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0 5 0.2 −135° 0° 40 MHz 3 GHz 0.5 2 −45° 1 1.0 −90° MGG724 IC = 10 mA; VCE = 2 V; Zo = 50 Ω. Fig.9 Common emitter input reflection coefficient (S11); typical values. 1998 Mar 11 6 f (MHz) 104 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 50 40 30 20 0° 10 −135° −45° −90° MGG725 IC = 10 mA; VCE = 2 V. Fig.10 Common emitter forward transmission coefficient (S21); typical values. 90° handbook, full pagewidth 135° 45° 3 GHz 0.1 0.08 180° 0.06 0.04 0.02 0° 40 MHz −135° −45° −90° MGG726 IC = 10 mA; VCE = 2 V. Fig.11 Common emitter reverse transmission coefficient (S12); typical values. 1998 Mar 11 7 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 40 MHz 0° 0 5 0.2 3 GHz −135° 0.5 2 −45° 1 1.0 −90° MGG727 IC = 10 mA; VCE = 2 V; Zo = 50 Ω. Fig.12 Common emitter output reflection coefficient (S22); typical values. Noise data VCE = 2 V; typical values. f (MHz) 900 IC (mA) Fmin (dB) Γmag Γangle rn (Ω) 1 0.8 0.73 11.2 0.56 2 0.9 0.58 10.1 0.43 4 1.1 0.40 10.1 0.33 6 1.3 0.28 11.0 0.30 8 1.5 0.20 8.0 0.30 10 1.7 0.14 10.5 0.27 12 1.9 0.06 10.1 0.25 14 2.1 0.05 14.2 0.26 1 1.2 0.64 35.7 0.57 2 1.2 0.50 35.8 0.44 4 1.4 0.34 34.4 0.37 6 1.6 0.25 33.7 0.34 8 1.8 0.17 34.5 0.35 10 2.0 0.12 35.8 0.34 12 2.2 0.05 38.0 0.35 14 2.4 0.03 44.8 0.34 MGG723 3 handbook, halfpage Fmin (dB) 2 (1) (2) 2000 1998 Mar 11 1 0 0 4 8 12 IC (mA) 16 (1) f = 2 GHz; VCE = 2 V. (2) f = 900 MHz; VCE = 2 V. Fig.13 Minimum noise figure as a function of the collector current; typical values. 8 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W SPICE parameters for the BFG410W die SEQUENCE No. PARAMETER VALUE SEQUENCE No. UNIT (2)(3) PARAMETER VALUE UNIT 1 IS 19.42 aA 39 Cbp 145 fF 2 BF 145.0 − 40 (2) Rsb1 25 Ω 3 NF 0.993 − 41 (3) Rsb2 19 Ω 4 VAF 31.12 V Notes 5 IKF 125.0 mA 6 ISE 123.6 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 3.000 − 8 BR 11.37 − 9 NR 0.985 − 10 VAR 1.874 V 11 IKR 50.00 mA 12 ISC 199.6 aA 13 NC 1.546 − 14 RB 35.00 Ω 15 IRB 0.000 A 16 RBM 15.00 Ω 17 RE 432.0 mΩ 18 RC 4.324 Ω 2. Bonding pad capacity Cbp in series with substrate resistance Rsb1 between B′ and E′. 3. Bonding pad capacity Cbp in series with substrate resistance Rsb2 between C′ and E′. C cb handbook, halfpage L1 B L2 B' C be C' E' C Cce XTB 1.500 − (1) EG 1.110 eV 21 (1) XTI 3.000 − 22 CJE 128.0 fF 23 VJE 900.0 mV 24 MJE 0.346 − 25 TF 4.122 ps 26 XTF 68.20 − 27 VTF 2.004 V 28 ITF 0.627 A 29 PTF 0.000 deg 30 CJC 56.68 fF 31 VJC 556.9 mV Cbe 80 fF 2 fF 19 (1) 20 MGD956 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc) fc = scaling frequency = 1 GHz. Fig.14 Package equivalent circuit SOT343R2. List of components (see Fig.14) DESIGNATION VALUE UNIT 32 MJC 0.207 − Ccb 33 XCJC 0.500 − Cce 80 fF TR 0.000 ns L1 1.1 nH 1.1 nH 0.25 nH 34 (1) (1) CJS 274.8 fF L2 36 (1) VJS 418.3 mV L3 (note 1) 37 (1) MJS 0.239 − 38 FC 0.550 − 35 1998 Mar 11 Note 1. External emitter inductance to be added separately due to the influence of the printed-circuit board. 9 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 SOT343R 1998 Mar 11 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125104/00/04/pp12 Date of release: 1998 Mar 11 Document order number: 9397 750 03388