HLDD30N10 N-Channel Enhancement Mode Power MOSFET Description Features The HLDD30N10 uses advanced trench technology and □ VDS =100V,ID =30A design to provide excellent RDS(ON) with low gate charge. □ RDS(ON)：31mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. It can be used in a wide variety of applications. Application □ □ □ Power switchingapplication Hard switched and high frequencycircuits Uninterruptible powersupply Marking and pin assignment N-Channel MOSFET Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID EAS PD TJ, TSTG Continuous Drain Current- 30 Continuous Drain Current-TC=100℃ 21 Pulsed Drain Current 70 Single Pules Avalanche Energy5 256 Power Dissipation 85 Operating and Storage Junction Temperature Range A A mJ W -55 to +175 ℃ Ratings Units 1.8 ℃/W Thermal Characteristic Symbol RƟJC RƟJA www.hldic.com Parameter 2 Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient Page 1 --- 2017.SZ193. V1.0 HLDD30N10 Package Marking and Ordering Information Part NO. Marking Package HLDD30N10 D30N10 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units VGS=0V,ID=250μA 100 115 --- V VGS=0V, VDS=100V --- --- 1 μA Tc=125℃ VDS=480V --- --- --- μA VGS=±20V, VDS=0V --- --- ±100 nA Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.3 1.9 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=10A --- 27 31 mΩ --- 2000 --- --- 300 --- --- 250 --- --- 7 --- ns --- 7 --- ns --- 29 --- ns --- 7 --- ns --- 39 --- nC --- 8 --- nC --- 12 --- nC --- --- 1. 2 V Dynamic Characteristics4 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHz pF Switching Characteristics4 td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time VDS=50V,RL=5Ω RGEN=3Ω , VGS=10V Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain “Miller” Charge VGS=10V, VDS=50V, ID=10A Drain-Source Diode Characteristics VSD trr Qrr Source-Drain Diode Forward Voltage Is=10A 3 Reverse Recovery Time IS=10A,VGS =0V --- 32 --- ns Reverse Recovery Charge diF/dt=100A/μs (Note3) --- 53 --- nC Notes: 1. Repetitive Rating: Pulse widthlimited bymaximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 s ec. 3. Pulse Test: Pulse W idth ≤ 300μs, Duty Cycle ≤2 % . 4. Guaranteed by design, not subject toproduction 5. EAS Condition : Tj=25℃ ,V DD=50V,VG=10V,L=0.5mH,Rg=25 , IAS=32A www.hldic.com Page 2 2017.SZ193. V1.0 HLDD30N10 www.hldic.com Page 3 2017.SZ193. V1.0 HLDD30N10 Typical Characteristics TJ=25℃ www.hldic.com unless otherwise noted Page 4 2017.SZ193. V1.0 HLDD30N10 www.hldic.com Page 5 2017.SZ193. V1.0 HLDD30N10 TO-252 Package Information www.hldic.com Page 6 2017.SZ193. V1.0