MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21060R3 MRF21060SR3 Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W - CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offset @ 4.096 MHz BW, 15 DTCH Output Power — 6.0 Watts Power Gain — 12.5 dB Drain Efficiency — 15% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 2170 MHz, 60 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF21060R3 CASE 465A - 06, STYLE 1 NI - 780S MRF21060SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 180 0.98 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 1.02 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 2 (Minimum) Machine Model M3 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF21060R3 MRF21060SR3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 6 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.27 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 4.7 — S Crss — 2.7 — pF Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Gps 11 12.5 — dB Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) η 31 34 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) IMD — - 30 - 28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) IRL — - 12 — dB P1dB — 60 — W OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Pout, 1 dB Compression Point (VDD = 28 Vdc, Pout = 60 W CW, f = 2170 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF21060R3 MRF21060SR3 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. R4 VGG B2 R3 R1 + VDD + + + R2 C1 C2 C3 C4 C5 Z8 Z1 Z2 Z3 Z4 Z5 Z6 C6 C7 C8 Z9 Z10 RF INPUT B3 Z11 Z12 Z13 Z14 Z15 RF OUTPUT C11 Z7 C12 Freescale Semiconductor, Inc... C9 C10 B2 - B3 C1 C2, C7 C3, C8 C4, C5 C6 C9, C11 C10 C12 R1 R2 R3 R4 Z1 Z2 DUT Ferrite Beads, Fair Rite #2743019447 10 µF, 50 V Electrolytic Chip Capacitor, Panasonic #ECEV1HV100R 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.10 µF Chip Capacitors, Kemet #CDR33BX104AKWS 4.7 pF Chip Capacitors, ATC #100B4R7JCA500X 22 µF, 35 V Tantalum Surface Mount Chip Capacitor, Sprague 9.1 pF Chip Capacitors, ATC #100B9R1JCA500X 0.8 pF - 8.0 pF Variable Capacitor, Johanson Gigatrim 0.4 pF - 4.5 pF Variable Capacitor, Johanson Gigatrim 1 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 560 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 10 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 10 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 0.743″ x 0.080″ Microstrip 0.070″ x 0.100″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Board 0.180″ x 0.100″ Microstrip 0.152″ x 0.293″ Microstrip 0.216″ x 0.100″ Microstrip 0.114″ x 0.410″ Microstrip 0.626″ x 0.872″ Microstrip 1.050″ x 0.050″ Microstrip 0.830″ x 0.050″ Microstrip 0.596″ x 1.040″ Microstrip 0.186″ x 0.315″ Microstrip 0.097″ x 0.525″ Microstrip 0.353″ x 0.138″ Microstrip 0.112″ x 0.080″ Microstrip 0.722″ x 0.080″ Microstrip 0.030″ Glass Teflon, Arlon GX - 0300 - 55 - 22, 2 oz Cu Figure 1. MRF21060 Test Circuit Schematic MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21060R3 MRF21060SR3 3 Freescale Semiconductor, Inc. TO GATE BIAS FEEDTHRU C1 R1 R3 C5 TO DRAIN BIAS FEEDTHRU C6 R4 B2 C2 C3 C4 R2 B3 C7 C8 C9 C11 C12 Freescale Semiconductor, Inc... C10 MRF21060 Figure 2. MRF21060 Test Circuit Component Layout MRF21060R3 MRF21060SR3 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. −5 30 −10 IRL 25 15 −20 −25 Gps 10 −30 IMD 5 0 2080 −35 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 −40 2200 VDD = 28 Vdc IDQ = 700 mA, f = 2140 MHz, Channel Spacing (Channel Bandwidth): 5 MHz @ 4.096 MHz BW 15 DTCH 40 35 −35 −40 25 15 900 mA −45 700 mA −50 500 mA −60 −65 0.1 −55 5 2 4 6 8 10 12 14 Pout, OUTPUT POWER (WATTS Avg.) W−CDMA −60 16 Figure 4. W - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 28 Vdc IDQ = 700 mA, f = 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing −30 −40 3rd Order −50 −60 5th Order 7th Order −70 −80 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 6. Intermodulation Distortion Products versus Output Power 14 −22 14 Pout = 60 W (PEP), IDQ = 500 mA f = 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing 900 mA G ps , POWER GAIN (dB) 13 700 mA 12 500 mA 10 0.1 −50 Gps 10 Figure 5. Intermodulation Distortion versus Output Power 11 −45 −20 VDD = 28 Vdc f = 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing −40 −55 η ACPR 20 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −35 −30 30 −25 −30 −25 VDD = 28 Vdc f = 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power MOTOROLA RF DEVICE DATA 13.5 IMD −24 −26 −28 −30 13 −32 Gps −34 12.5 −36 100 12 22 24 26 28 30 −38 32 VDD, DRAIN VOLTAGE (VOLTS) Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage For More Information On This Product, Go to: www.freescale.com MRF21060R3 MRF21060SR3 5 IMD, INTERMODULATION DISTORTION (dBc) 20 −15 VDD = 28 Vdc Pout = 60 W (PEP), IDQ = 500 mA Two−Tone Measurement, 100 kHz Tone Spacing −20 45 ADJACENT CHANNEL POWER RATIO (dB) η 35 η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) 0 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 Figure 3. Class AB Broadband Circuit Performance G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Freescale Semiconductor, Inc. f = 2110 MHz Zsource f = 2110 MHz 2170 MHz Zload Freescale Semiconductor, Inc... 2170 MHz Zo = 5 Ω VDD = 28 V, IDQ = 500 mA, Pout = 60 W PEP f MHz Zsource Ω Zload Ω 2110 2.40 - j0.55 3.07 - j2.05 2140 2.26 - j0.87 2.89 - j2.38 2170 2.08 - j1.23 2.66 - j2.71 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF21060R3 MRF21060SR3 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb T A M B M M M bbb Freescale Semiconductor, Inc... N M T A M B M ccc M T A M M aaa M T A M M T A M B (LID) B S (LID) ccc H R (INSULATOR) M (INSULATOR) B M C F E A T A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 K 2X 2 D bbb M T A M B M N M R (LID) ccc M T A M B M M B M ccc M T A M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M C 3 E A (FLANGE) MOTOROLA RF DEVICE DATA T SEATING PLANE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE H A MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF CASE 465 - 06 ISSUE F NI - 780 MRF21060R3 4X U (FLANGE) B INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE (FLANGE) (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc CASE 465A - 06 ISSUE F NI - 780S MRF21060SR3 F For More Information On This Product, Go to: www.freescale.com MRF21060R3 MRF21060SR3 7 Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola products. 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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF21060R3 MRF21060SR3 8 ◊ MOTOROLA RF DEVICE MRF21060/D DATA For More Information On This Product, Go to: www.freescale.com