CYSTEKEC MTD030N11QJ3-0-T3-G N -channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C168J3
Issued Date : 2017.07.04
Revised Date : 2017.07.05
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTD030N11QJ3
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=7A
110V
29A
23mΩ(typ)
33mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTD030N11QJ3
TO-252(DPAK)
G
G:Gate D:Drain
S:Source
D S
Ordering Information
Device
MTD030N11QJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD030N11QJ3
CYStek Product Specification
Spec. No. : C168J3
Issued Date : 2017.07.04
Revised Date : 2017.07.05
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
ID
Continuous Drain Current @ TA=25°C, VGS=10V
*4
Continuous Drain Current @ TA=70°C, VGS=10V
*4
Pulsed Drain Current
*1
IDM
Avalanche Current
IAS
Avalanche Energy @ L=0.1mH, IAS=29A, VDD=25V, VGS=10V *3 EAS
Repetitive Avalanche Energy @ L=0.05mH
*1, *2
EAR
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
PD
Total Power Dissipation @TA=25℃
*4
Total Power Dissipation @TA=70℃
*4
Operating Junction and Storage Temperature Range
Tj, Tstg
Unit
110
±20
29
18
6.5
5.2
116
29
42
5
50
20
2.5
1.6
-55~+150
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
*4
Thermal Resistance, Junction-to-ambient, max
Note : *1. Pulse width limited by maximum junction temperature
Symbol
RθJC
RθJA
Value
2.5
50
110
Unit
°C/W
*2. Duty cycle ≤ 1%
*3. 100% tested by conditions of L=0.1mH, IAS=24A, VGS=10V, VDD=25V
*4. Surface mounted on 1 in² copper pad of FR-4 board
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON)
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
MTD030N11QJ3
*1
Min.
Typ.
Max.
Unit
Test Conditions
110
1.3
-
0.07
20
23
33
2.6
±100
1
25
30
66
V
V/°C
V
S
nA
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS =VGS, ID=250μA
VDS =10V, ID=10A
VGS=±20V, VDS=0V
VDS =90V, VGS =0V
VDS =90V, VGS =0V, Tj=125°C
VGS =10V, ID=10A
VGS =4.5V, ID=7A
-
23
2.4
10
-
μA
mΩ
nC
ID=10A, VDS=50V, VGS=10V
CYStek Product Specification
CYStech Electronics Corp.
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
10
24
32.2
13.4
705
123
120
1
-
-
0.74
32
36
29
116
1
-
Spec. No. : C168J3
Issued Date : 2017.07.04
Revised Date : 2017.07.05
Page No. : 3/9
ns
VDS=50V, ID=10A, VGS=10V,
RG=3Ω
pF
VGS=0V, VDS=25V, f=1MHz
Ω
f=1MHz
A
V
ns
nC
IS=1A, VGS=0V
IF=10A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTD030N11QJ3
CYStek Product Specification
Spec. No. : C168J3
Issued Date : 2017.07.04
Revised Date : 2017.07.05
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
50
ID, Drain Current (A)
40
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V
5V
4 .5V
30
20
4V
10
VGS=3.5V
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
VGS=5V
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=4.5V
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
500
ID=10A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
400
300
200
100
2
VGS=10V, ID=10A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 23mΩtyp.
0
0
0
MTD030N11QJ3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C168J3
Issued Date : 2017.07.04
Revised Date : 2017.07.05
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0
5
10
15
20
25
VDS, Drain-Source Voltage(V)
-75 -50 -25
30
50
75 100 125 150 175
Gate Charge Characteristics
100
10
VDS=10V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
VDS=15V
0.1
Ta=25°C
Pulsed
8
6
4
VDS=50V
ID=10A
2
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
5
10
15
20
Qg, Total Gate Charge(nC)
25
30
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
35
RDSON
Limited
100
ID, Maximum Drain Current(A)
1000
ID, Drain Current(A)
0
100μs
1ms
10
10ms
100ms
1
TC=25°C, Tj=150°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
1s
DC
30
25
20
15
10
5
VGS=10V, RθJC=2.5°C/W
0
0.1
0.1
MTD030N11QJ3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
TC , Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C168J3
Issued Date : 2017.07.04
Revised Date : 2017.07.05
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
1000
50
900
45
VDS=10V
700
35
Power (W)
ID, Drain Current(A)
TJ(MAX) =150°C
TC=25°C
RθJC=2.5°C/W
800
40
30
25
20
600
500
400
15
300
10
200
5
100
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTD030N11QJ3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C168J3
Issued Date : 2017.07.04
Revised Date : 2017.07.05
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTD030N11QJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C168J3
Issued Date : 2017.07.04
Revised Date : 2017.07.05
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTD030N11QJ3
CYStek Product Specification
Spec. No. : C168J3
Issued Date : 2017.07.04
Revised Date : 2017.07.05
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
D030
N11Q
Date
Code
□□□□
1
2
3
Date Code : from left to right
1st code : last digit of chritian year
2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D, May→E, Jun→F, Jul→G, Aug→H
Sep→J, Oct→K, Nov→L, Dec→M
3rd and 4th code : production seral number, 01~99
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTD030N11QJ3
CYStek Product Specification
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