ISC BUV37 Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUV37
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.)
·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 10A
APPLICATIONS
·Designed for use in automotive ignition circuits.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current- Continuous
15
A
ICM
Collector Current-Peak
30
A
IB
Base Current - Continuous
4
A
PC
Collector Power Dissipation
@TC=25℃
100
W
Tj
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.25
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUV37
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 5A; IB= 0; L= 15mH
400
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 7 A; IB= 70mA
1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10 A; IB= 150mA
2.0
V
Base-Emitter Saturation Voltage
IC= 10 A; IB= 150mA
2.7
V
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
0.25
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
40
mA
hFE
DC Current Gain
IC= 15A; VCE= 5V
VBE(sat)
isc Website:www.iscsemi.cn
B
B
B
20
TYP
MAX
UNIT
V
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