isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV37 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max.)@ IC= 10A APPLICATIONS ·Designed for use in automotive ignition circuits. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current - Continuous 4 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV37 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A; IB= 0; L= 15mH 400 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7 A; IB= 70mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10 A; IB= 150mA 2.0 V Base-Emitter Saturation Voltage IC= 10 A; IB= 150mA 2.7 V ICEO Collector Cutoff Current VCE= 400V; IB= 0 0.25 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 40 mA hFE DC Current Gain IC= 15A; VCE= 5V VBE(sat) isc Website：www.iscsemi.cn B B B 20 TYP MAX UNIT V