ON NUD3160 Industrial inductive load driver Datasheet

NUD3160, SZNUD3160
Industrial Inductive
Load Driver
This micro−integrated part provides a single component solution to
switch inductive loads such as relays, solenoids, and small DC motors
without the need of a free−wheeling diode. It accepts logic level
inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
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MARKING DIAGRAMS
Features
3
• Provides Robust Interface between D.C. Relay Coils and Sensitive
•
•
•
•
•
•
1
Logic
Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V
or 48 V
Replaces 3 or 4 Discrete Components for Lower Cost
Internal Zener Eliminates Need for Free−Wheeling Diode
Meets Load Dump and other Automotive Specs
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
2
JW8 MG
G
JW8 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
SC−74
CASE 318F
STYLE 7
6
1
JW8 MG
G
JW8 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Typical Applications
• Automotive and Industrial Environment
• Drives Window, Latch, Door, and Antenna Relays
ORDERING INFORMATION
Package
Shipping†
NUD3160LT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
SZNUD3160LT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
NUD3160DMT1G
SC−74
(Pb−Free)
3000 / Tape &
Reel
SZNUD3160DMT1G
SC−74
(Pb−Free)
3000 / Tape &
Reel
Device
Benefits
•
•
•
•
SOT−23
CASE 318
STYLE 21
Reduced PCB Space
Standardized Driver for Wide Range of Relays
Simplifies Circuit Design and PCB Layout
Compliance with Automotive Specifications
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Drain (3)
Gate (1)
Gate (2)
10 k
100 k
10 k
10 k
CASE 318
© Semiconductor Components Industries, LLC, 2003
Gate (5)
100 k
100 k
Source (2)
October, 2016 − Rev. 7
Drain (3)
Drain (6)
Source (4)
Source (1)
CASE 318F
Figure 1. Internal Circuit Diagrams
1
Publication Order Number:
NUD3160/D
NUD3160, SZNUD3160
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol
Rating
Value
Unit
VDSS
Drain−to−Source Voltage – Continuous (TJ = 125°C)
60
V
VGSS
Gate−to−Source Voltage – Continuous (TJ = 125°C)
12
V
ID
Drain Current – Continuous (TJ = 125°C)
Minimum copper, double sided board, TA = 80°C
SOT−23
SC74 Single device driven
SC74 Both devices driven
1 in2 copper, double sided board, TA = 25°C
SOT−23
SC74 Single device driven
SC74 Both devices driven
mA
158
157
132 ea
272
263
230 ea
EZ
Single Pulse Drain−to−Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
200
mJ
PPK
Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)
(TJ Initial = 85°C)
20
W
ELD1
Load Dump Pulse, Drain−to−Source (Note 3)
RSOURCE = 0.5 W, T = 300 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
60
V
ELD2
Inductive Switching Transient 1, Drain−to−Source
(Waveform: RSOURCE = 10 W, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
100
V
ELD3
Inductive Switching Transient 2, Drain−to−Source
(Waveform: RSOURCE = 4.0 W, T = 50 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
300
V
Rev−Bat
Reverse Battery, 10 Minutes (Drain−to−Source)
(For Relay’s Coils/Inductive Loads of 80 W or more)
−14
V
Dual−Volt
Dual Voltage Jump Start, 10 Minutes (Drain−to−Source)
28
V
2000
V
ESD
Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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2
NUD3160, SZNUD3160
THERMAL CHARACTERISTICS
Symbol
Rating
Unit
TA
Operating Ambient Temperature
−40 to 125
°C
TJ
Maximum Junction Temperature
150
°C
−65 to 150
°C
TSTG
Storage Temperature Range
PD
Total Power Dissipation (Note 4)
Derating above 25°C
SOT−23
225
1.8
mW
mW/°C
PD
Total Power Dissipation (Note 4)
Derating above 25°C
SC−74
380
3.0
mW
mW/°C
SOT−23
SC−74 One Device Powered
SC−74 Both Devices Equally Powered
556
556
398
SOT−23
SC−74 One Device Powered
SC−74 Both Devices Equally Powered
395
420
270
RqJA
Thermal Resistance, Junction–to–Ambient
Minimum Copper
300 mm2 Copper
1.
2.
3.
4.
Value
Nonrepetitive current square pulse 1.0 ms duration.
For different square pulse durations, see Figure 12.
Nonrepetitive load dump pulse per Figure 3.
Mounted onto minimum pad board.
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3
°C/W
NUD3160, SZNUD3160
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Min
Typ
Max
Unit
VBRDSS
61
66
70
V
−
−
−
−
−
−
−
−
0.5
1.0
50
80
−
−
−
−
−
−
−
−
60
80
90
110
1.3
1.3
1.8
−
2.0
2.0
−
−
−
−
−
−
−
−
2.4
3.7
1.8
2.9
150
100
200
−
−
−
gFS
−
400
−
mmho
Input Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Ciss
−
30
−
pf
Output Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Coss
−
14
−
pf
Transfer Capacitance
(VDS = 12 V, VGS = 0 V, f = 10 kHz)
Crss
−
6.0
−
pf
tPHL
tPLH
−
−
918
798
−
−
tPHL
tPLH
−
−
331
1160
−
−
tf
tr
−
−
2290
618
−
−
tf
tr
−
−
622
600
−
−
Characteristic
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(ID = 10 mA)
Drain to Source Leakage Current
(VDS = 12 V, VGS = 0 V)
(VDS = 12 V, VGS = 0 V, TJ = 125°C)
(VDS = 60 V, VGS = 0 V)
(VDS = 60 V, VGS = 0 V, TJ = 125°C)
IDSS
Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 3.0 V, VDS = 0 V, TJ = 125°C)
(VGS = 5.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V, TJ = 125°C)
IGSS
mA
mA
ON CHARACTERISTICS
Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 125°C)
VGS(th)
Drain to Source On−Resistance
(ID = 150 mA, VGS = 3.0 V)
(ID = 150 mA, VGS = 3.0 V, TJ = 125°C)
(ID = 150 mA, VGS = 5.0 V)
(ID = 150 mA, VGS = 5.0 V, TJ = 125°C)
RDS(on)
Output Continuous Current
(VDS = 0.3 V, VGS = 5.0 V)
(VDS = 0.3 V, VGS = 5.0 V, TJ = 125°C)
IDS(on)
Forward Transconductance
(VDS = 12 V, ID = 150 mA)
V
W
mA
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V)
Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V)
High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V)
Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V)
Transition Times:
Fall Time; Figure 2, (VDS = 12 V, VGS = 3.0 V)
Rise Time; Figure 2, (VDS = 12 V, VGS = 3.0 V)
Fall Time; Figure 2, (VDS = 12 V, VGS = 5.0 V)
Rise Time; Figure 2, (VDS = 12 V, VGS = 5.0 V)
ns
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NUD3160, SZNUD3160
TYPICAL WAVEFORMS
(TJ = 25°C unless otherwise specified)
VIH
Vin
50%
0V
tPHL
tPLH
VOH
90%
Vout
50%
10%
VOL
tr
tf
Figure 2. Switching Waveforms
tr
Load Dump Pulse Not Suppressed:
Vr = 13.5 V Nominal ±10%
VS = 60 V Nominal ±10%
T = 300 ms Nominal ±10%
tr = 1 − 10 ms ±10%
90%
10% of Peak;
Reference = Vr, Ir
10%
Vr, Ir
Figure 3. Load Dump Waveform Definition
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5
VS
T
NUD3160, SZNUD3160
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise specified)
80
VDS = 60 V
70
IGSS GATE LEAKAGE (mA)
IDSS, DRAIN LEAKAGE (mA)
80
60
50
40
30
20
10
0
−50
−25
0
25
50
100
75
70
60
40
VGS = 3 V
30
20
−50
125
VGS = 5 V
50
−25
TJ, JUNCTION TEMPERATURE (°C)
1E+03
66.2
ID DRAIN CURRENT (mA)
BVDSS BREAKDOWN VOLTAGE (V)
66.4
66.0
ID = 10 mA
65.6
65.4
65.2
65.0
64.8
−50
−25
0
25
75
50
100
0.01
0.001
125 °C
1E−05
1E−07
1.0
25 °C
1.2
1.4
−40 °C
1.6
1.8
2.0
2.2
VGS = 2.5 V
VGS = 3 V
VGS = 2 V
1E+00
1E−01
VGS = 1.5 V
1E−02
1E−03
0.0
125
VGS = 5 V
1E+01
2.4
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW)
ID DRAIN CURRENT (mA)
VDS = 0.8 V
85 °C
125
0.2
0.1
0.3
0.4
0.5
0.6
0.7
0.8
Figure 7. Output Characteristics
1
1E−06
100
75
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Breakdown Voltage vs.
Junction Temperature
1E−04
50
1E+02
TJ, JUNCTION TEMPERATURE (°C)
0.1
25
Figure 5. Gate−to−Source Leakage vs.
Junction Temperature
Figure 4. Drain−to−Source Leakage vs.
Junction Temperature
65.8
0
TJ, JUNCTION TEMPERATURE (°C)
2.6
3200
ID = 0.15 A
2800
2400
VGS = 3.0 V
2000
1600
VGS = 5.0 V
1200
800
−50
Figure 8. Transfer Function
−25
0
25
50
75
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. On Resistance Variation vs
Junction Temperature
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6
100
125
NUD3160, SZNUD3160
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise specified)
90
ID = 250 mA
125 °C
VZ ZENER CLAMP VOLTAGE (V)
RDS(ON), DRAIN−TO−SOURCE
RESISTANCE (mW)
100
80
70
60
85 °C
50
25 °C
40
30
−40 °C
20
10
0
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
68.0
67.5
67.0
66.5
−40 °C
66.0
65.5
25 °C
85 °C
65.0
64.5
64.0
63.5
63.0
62.5
62.0
0.1
125 °C
1.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
100
1000
IZ, ZENER CURRENT (mA)
Figure 11. Zener Clamp Voltage vs. Zener
Current
Figure 10. On Resistance Variation vs.
Gate−to−Source Voltage
100
600
SC74−1 (One Device Powered)
qJA (°C/W)
POWER (WATTS)
SC74−2 (Both Devices Powered Equally)
500
10
SC74−1
400
SOT23
300
1
0.1
1.0
10
200
100
SC74−2
1 oz. Copper, Single−sided Board
0
100
200
300
400
500
600
PW, PULSE WIDTH (ms)
COPPER AREA (mm2)
Figure 12. Maximum Non−repetitive Surge
Power vs. Pulse Width
Figure 13. Thermal Performance vs. Board
Copper Area
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7
700
NUD3160, SZNUD3160
APPLICATIONS INFORMATION
12 V Battery
−
+
NC
NO
Relay, Vibrator,
or
Inductive Load
Drain (3)
Gate (1)
Micro
Processor
Signal
for
Relay
10 k
100 K
NUD3160
Source (2)
Figure 14. Applications Diagram
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8
NUD3160, SZNUD3160
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
9
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
NUD3160, SZNUD3160
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
D
6
HE
1
5
4
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05.
E
DIM
A
A1
b
c
D
E
e
L
HE
q
b
e
C
A
0.05 (0.002)
q
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
−
10°
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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10
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NUD3160/D