MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G High Voltage Transistor PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 (TO−236) CASE 318 STYLE 6 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −500 mAdc Collector Current − Continuous 1 BASE 2 EMITTER Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 2L M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W (Note: Microdot may be in either location) PD 300 mW *Date Code orientation and/or overbar may vary depending upon manufacturing location. 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. 1 2L M G = Specific Device Code = Date Code* = Pb−Free Package ORDERING INFORMATION Device Package Shipping† MMBT5401LT1G SOT−23 (Pb−Free) 3,000 Tape & Reel SMMBT5401LT1G SOT−23 (Pb−Free) 3,000 Tape & Reel MMBT5401LT3G SOT−23 10,000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. 11 1 Publication Order Number: MMBT5401LT1/D MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −150 − −160 − −5.0 − − − −50 −50 50 60 50 − 240 − − − −0.2 −0.5 − − −1.0 −1.0 100 300 − 6.0 40 200 − 8.0 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = −120 Vdc, IE = 0) (VCB = −120 Vdc, IE = 0, TA = 100°C) ICBO Vdc Vdc Vdc nAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = −1.0 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −50 mAdc, VCE = −5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz) fT Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo Small Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe Noise Figure (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz) NF http://onsemi.com 2 MHz pF − dB MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G 200 150 h FE, CURRENT GAIN TJ = 125°C 100 25°C 70 50 -55°C VCE = - 1.0 V VCE = - 5.0 V 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 10 20 50 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 0.5 10 mA 30 mA 100 mA 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT (A) μ VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 102 VCE = 30 V IC = ICES 101 TJ = 125°C 100 75°C 10-1 10-2 REVERSE 25°C 10-3 0.3 0.2 FORWARD 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut−Off Region http://onsemi.com 3 0.6 0.7 MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G 1.0 0.18 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.20 0.15 0.13 150°C 0.10 25°C 0.08 0.05 −55°C 0.03 0 0.0001 0.001 0.01 25°C 0.7 150°C 0.6 0.5 0.4 0.3 0.0001 IC, COLLECTOR CURRENT (A) θV, TEMPERATURE COEFFICIENT (mV/ °C) VBE(on), BASE−EMITTER VOLTAGE (V) VCE = 10 V −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 2.5 1.5 1.0 0.5 -0.5 -1.0 -1.5 qVB for VBE(sat) -2.0 -2.5 0.1 0.1 qVC for VCE(sat) 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Base Emitter Voltage vs. Collector Current 100 70 50 C, CAPACITANCE (pF) VCC -30 V 100 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 mF 3.0 k RC Vout RB 5.1 k Vin 100 50 100 Figure 7. Temperature Coefficients 10.2 V Vin 0.1 TJ = - 55°C to 135°C 2.0 IC, COLLECTOR CURRENT (A) VBB +8.8 V 0.01 Figure 5. Base Emitter Saturation Voltage vs. Collector Current 1.1 0.9 0.001 IC, COLLECTOR CURRENT (A) Figure 4. Collector Emitter Saturation Voltage vs. Collector Current 1.0 −55°C 0.8 0.2 0.1 IC/IB = 10 0.9 TJ = 25°C 30 Cibo 20 10 7.0 5.0 Cobo 3.0 1N914 2.0 1.0 0.2 Values Shown are for IC @ 10 mA Figure 8. Switching Time Test Circuit 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 9. Capacitances http://onsemi.com 4 10 20 MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G 1000 700 500 2000 IC/IB = 10 TJ = 25°C tr @ VCC = 120 V tr @ VCC = 30 V 200 t, TIME (ns) t, TIME (ns) 300 1000 700 500 100 70 50 td @ VBE(off) = 1.0 V VCC = 120 V 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 200 ts @ VCC = 120 V 30 50 100 20 0.2 0.3 0.5 200 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 10. Turn−On Time Figure 11. Turn−Off Time 50 100 200 1 VCE = 1 V TA = 25°C IC, COLLECTOR CURRENT (A) fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) tf @ VCC = 30 V 300 1000 100 10 tf @ VCC = 120 V 100 70 50 30 20 IC/IB = 10 TJ = 25°C 0.1 1 10 100 10 mSec 0.1 1 Sec 0.01 0.001 1 IC, COLLECTOR CURRENT (A) 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 5 1000 MMBT5401LT1G, SMMBT5401LT1G, MMBT5401LT3G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBT5401LT1/D