BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS ■ BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are BD534, BD536, and BD538 respectively. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t NPN BD533 BD535 BD537 PNP BD534 BD536 BD538 V CBO Collector-Base Voltage (IE = 0) 45 60 80 V V CES Collector-Emitter Voltage (V BE = 0) 45 60 80 V V CEO Collector-Emitter Voltage (I B = 0) 45 60 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V I C, I E Collector and Emitter Current 8 A Base Current 1 A IB P t ot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj o Max. O perating Junction Temperature 50 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. June 1997 1/4 BD533/BD534/BD535/BD536/BD537/BD538 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 2.5 70 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Max. Un it I CBO Collector Cut-off Current (IE = 0) Parameter for BD533/534 for BD535/536 for BD537/538 V CB = 45 V V CB = 60 V V CB = 80 V 100 100 100 µA µA µA I CES Collector Cut-off Current (V BE = 0) for BD533/534 for BD535/536 for BD537/538 V CE = 45 V V CE = 60 V V CE = 80 V 100 100 100 µA µA µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus )∗ Collector-Emitter Sustaining Voltage (IB = 0) V CE(sat )∗ Collector-Emitter Saturation Voltage Test Cond ition s I C = 100 mA for BD533/534 for BD535/536 for BD537/538 IC = 2 A IC = 6 A I B = 0.2 A I B = 0.6 A V BE ∗ Base-Emitter Voltage IC = 2 A h FE∗ DC Current G ain I C = 10 mA I C = 500 mA IC = 2 A fT Transition frequency I C = 500 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Areas 2/4 Min. Typ . 45 60 80 V V V V CE = 2 V V CE = 5 V for BD533/534 for BD535/536 for BD537/538 V CE = 2 V V CE = 2 V for BD533/534 for BD535/536 for BD537/538 V CE = 1 V 0.8 V V 1.5 V 0.8 20 20 15 40 25 25 15 3 12 MHz BD533/BD534/BD535/BD536/BD537/BD538 TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 1.27 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 0.551 L2 L4 16.4 13.0 0.645 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 BD533/BD534/BD535/BD536/BD537/BD538 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 4/4