DTB133HK / DTB133HS Transistors Digital transistors (built-in resistors) DTB133HK / DTB133HS !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on/off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. !External dimensions (Units : mm) (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) DTB133HK 1.6 0to0.1 0.3to0.6 1.1 0.8 0.15 2.8 Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) !Absolute maximum ratings (Ta = 25°C) Limits Unit VCC −50 −20 V VI Output current DTB133HK Power dissipation DTB133HS IC V Junction temperature Tj 6 −500 200 300 150 Storage temperature Tstg −55~150 Pd 4 2 3Min. Input voltage DTB133HS 3 Symbol (15Min.) Parameter Supply voltage mA mW 0.45 0.5 0.45 2.5 °C 5 °C (1) (2) (3) Taping specifications (1) Emitter (2) Collector (3) Base ROHM : SPT EIAJ : SC-72 !Package, marking, and packaging specifications !Circuit schematic Part No. DTB133HK DTB133HS Package Marking Packaging code Basic ordering unit (pieces) SMT3 G98 SPT - T146 3000 TP 5000 R1 IN OUT R2 GND (+) IN OUT GND (+) !Electrical characteristics (Ta = 25°C) Parameter Input voltage Output voltage Input current Output current Symbol Min. Typ. Max. VI(off) VI(on) VO(on) - - −0.3 −2 - II - −0.3 −2.4 IO(off) 56 2.31 −0.1 - DC current gain GI Input resistance R1 Resistance ratio R2/R1 Transition frequency ∗ Transition frequency of the device. fT 2.4 - Unit V V Conditions VCC = −5V , IO = −100µA VO = −0.3V , IO = −20mA IO = −50mA , II = −2.5mA mA VI = −5V µA - −0.5 - VCC = −50V , VI = 0V IO = −50mA , VO = −5V 3.3 4.29 kΩ 3 200 3.7 - MHz - VCE = −10V , IE = 5mA , f = 100MHz ∗