CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTD2150FP Spec. No. : C848FP Issued Date : 2011.09.14 Revised Date : 2011.11.22 Page No. : 1/6 50V 3A 125mΩ typ. Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB1424FP • Pb-free lead plating package Symbol Outline BTD2150FP TO-220FP B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP Pd Tj ; Tstg Limits 50 50 6 3 7 *1 2 30 -55~+150 Unit V A W °C Note : *1. Single Pulse Pw=10ms BTD2150FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848FP Issued Date : 2011.09.14 Revised Date : 2011.11.22 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VCE(sat) *RCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 50 50 6 250 270 200 - Typ. 0.25 125 90 13 Max. 1 1 120 0.3 0.5 250 1.4 560 - Unit V V V µA µA mV V V mΩ V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=50V, IE=0 VEB=6V, IC=0 IC=500mA, IB=50mA IC=1A, IB=10mA IC=2A, IB=100mA IC=2A, IB=100mA IC=2A, IB=200mA VCE=2V, IC=20mA VCE=2V, IC=100mA VCE=2V, IC=1A VCE=5V, IC=0.5A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Ordering Information Device BTD2150FP BTD2150FP Package TO-220FP (Pb-free lead plating package) Shipping 50 pcs / tube, 40 tubes / boxes CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848FP Issued Date : 2011.09.14 Revised Date : 2011.11.22 Page No. : 3/6 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.25 1 0.2 Collector Current---IC(A) Collector Current---IC(A) IB=500uA IB=400uA 0.15 IB=300uA IB=200uA 0.1 IB=100uA 0.05 IB=0 0.9 0.8 IB=2.5mA IB=2mA 0.7 IB=1.5mA 0.6 0.5 IB=1mA 0.4 0.3 IB=500uA 0.2 0.1 IB=0 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 3 4.5 IB=10mA 2.5 IB=6mA 2 IB=25mA 4 IB=8mA Collector Current---IC(A) Collector Current---IC(A) 6 IB=4mA 1.5 IB=2mA 1 0.5 IB=20mA 3.5 IB=15mA 3 IB=10mA 2.5 2 IB=5mA 1.5 1 0.5 IB=0 0 IB=0 0 0 1 2 3 4 5 6 0 Collector-to-Emitter Voltage---VCE(V) Current Gain vs Collector Current 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE VCE=5V VCE=2V 100 VCE=1V VCE(SAT) IC=100IB 100 IC=50IB IC=20IB 10 10 1 BTD2150FP 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848FP Issued Date : 2011.09.14 Revised Date : 2011.11.22 Page No. : 4/6 Typical Characteristics(Cont.) Capacitance vs Reverse-Biased Voltage Saturation Voltage vs Collector Current 1000 VBE(SAT)@IC=10IB Capacitance---(pF) Saturation Voltage---(mV) 10000 1000 Cib 100 10 Cob 1 100 1 10 100 1000 Collector Current---IC(mA) 0.1 10000 100 Power Derating Curve Power Derating Curve 35 Power Dissipation---PD(W) 2.5 Power Dissipation---PD(W) 1 10 Reverse-Biased Voltage---(V) 2 1.5 1 0.5 0 30 25 20 15 10 5 0 0 BTD2150FP 50 100 150 Ambient Temperature---TA(℃) 200 0 50 100 150 CaseTemperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848FP Issued Date : 2011.09.14 Revised Date : 2011.11.22 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 220 +0/-5 °C 217°C 60-150 seconds 245 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD2150FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848FP Issued Date : 2011.09.14 Revised Date : 2011.11.22 Page No. : 6/6 TO-220FP Dimension Marking: D2150 Date Code □□ 1 2 3 Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-220FP Plastic Package CYStek Package Code: FP *: Typical Inches Min. Max. 0.169 0.185 0.051 REF 0.110 0.126 0.098 0.114 0.020 0.030 0.043 0.053 0.069 0.059 0.020 0.030 DIM A A1 A2 A3 b b1 b2 c Millimeters Min. Max. 4.300 4.700 1.300 REF 2.800 3.200 2.500 2.900 0.500 0.750 1.100 1.350 1.750 1.500 0.500 0.750 DIM D E e F Φ L L1 L2 Inches Min. Max. 0.408 0.392 0.583 0.598 0.100 TYP 0.106 REF 0.138 REF 1.102 1.118 0.067 0.075 0.075 0.083 Millimeters Min. Max. 10.360 9.960 14.800 15.200 2.540 TYP 2.700 REF 3.500 REF 28.000 28.400 1.700 1.900 1.900 2.100 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2150FP CYStek Product Specification