BAS 16S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Internal (galvanic) isolated Diodes 6 in one package Tape loading orientation 2 1 Type Marking Ordering Code Pin Configuration BAS 16S A6s 3 VPS05604 Package Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current IF 200 mA Surge forward current, t = 1 µs I FS 4.5 A Total power dissipation, T S = 85 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature T stg V 65 ...+150 Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA ≤ 530 K/W RthJS ≤ 260 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Apr-24-1998 1998-11-01 BAS 16S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 75 - - DC characteristics V(BR) Breakdown voltage V I (BR) = 100 µA VF Forward voltage mV I F = 1 mA - - 715 I F = 10 mA - - 855 I F = 50 mA - - 1000 I F = 150 mA - - 1250 - - 2.5 IR Reverse current µA VR = 70 V IR Reverse current nA VR = 25 V, TA = 150 °C - - 30 VR = 70 V, TA = 150 °C - - 50 CD - - 2 pF t rr - - 6 ns AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00016 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Semiconductor Group Semiconductor Group Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF 22 Apr-24-1998 1998-11-01 BAS 16S Forward current IF = f (TA*;TS) Forward current IF = f V F) * Package mounted on epoxy TA = 25°C 300 BAS 16 150 5 EHB00023 Ι F mA mA IF 200 100 TS 150 typ TA 100 max 50 50 0 0 20 40 60 80 120 °C 100 0 150 0 0.5 1.0 TA,TS V 1.5 VF Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 2 10 3 IFmax / IFDC K/W RthJS 10 2 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 - 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Apr-24-1998 1998-11-01 BAS 16S Forward voltage V F = f (TA) 1.0 VF Reverse current IR = f (TA) BAS 16 V EHB00025 BAS 16 ΙR Ι F = 100 mA EHB00022 10 5 nA V R = 70 V 10 4 0.5 max. 5 10 mA 1 mA 10 3 0.1 mA 5 70 V 25 V typ. 10 2 5 10 1 0 0 50 Semiconductor Group Semiconductor Group 100 C TA 150 0 44 50 100 C TA 150 Apr-24-1998 1998-11-01