Siemens BAS16S Silicon switching diode array (for high-speed switching applications internal (galvanic) isolated diodes in one package) Datasheet

BAS 16S
Silicon Switching Diode Array
4
• For high-speed switching applications
5
• Internal (galvanic) isolated Diodes
6
in one package
Tape loading orientation
2
1
Type
Marking Ordering Code Pin Configuration
BAS 16S
A6s
3
VPS05604
Package
Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
VR
75
Peak reverse voltage
VRM
85
Forward current
IF
200
mA
Surge forward current, t = 1 µs
I FS
4.5
A
Total power dissipation, T S = 85 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
T stg
V
65 ...+150
Thermal Resistance
Junction - ambient
1)
Junction - soldering point
RthJA
≤ 530
K/W
RthJS
≤ 260
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
Semiconductor Group
11
Apr-24-1998
1998-11-01
BAS 16S
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
75
-
-
DC characteristics
V(BR)
Breakdown voltage
V
I (BR) = 100 µA
VF
Forward voltage
mV
I F = 1 mA
-
-
715
I F = 10 mA
-
-
855
I F = 50 mA
-
-
1000
I F = 150 mA
-
-
1250
-
-
2.5
IR
Reverse current
µA
VR = 70 V
IR
Reverse current
nA
VR = 25 V, TA = 150 °C
-
-
30
VR = 70 V, TA = 150 °C
-
-
50
CD
-
-
2
pF
t rr
-
-
6
ns
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
I F = 10 mA, I R = 10 mA, R L = 100 Ω,
measured at IR = 1mA
Test circuit for reverse recovery time
D.U.T.
ΙF
Oscillograph
EHN00016
Pulse generator: tp = 100ns, D = 0.05,
t r = 0.6ns, R i = 50Ω
Semiconductor Group
Semiconductor Group
Oscillograph: R = 50Ω, tr = 0.35ns,
C ≤ 1pF
22
Apr-24-1998
1998-11-01
BAS 16S
Forward current IF = f (TA*;TS)
Forward current IF = f V F)
* Package mounted on epoxy
TA = 25°C
300
BAS 16
150
5
EHB00023
Ι F mA
mA
IF
200
100
TS
150
typ
TA
100
max
50
50
0
0
20
40
60
80
120 °C
100
0
150
0
0.5
1.0
TA,TS
V
1.5
VF
Permissible Pulse Load R thJS = f(t p)
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 2
10 3
IFmax / IFDC
K/W
RthJS
10 2
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
tp
Semiconductor Group
Semiconductor Group
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
-
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
33
Apr-24-1998
1998-11-01
BAS 16S
Forward voltage V F = f (TA)
1.0
VF
Reverse current IR = f (TA)
BAS 16
V
EHB00025
BAS 16
ΙR
Ι F = 100 mA
EHB00022
10 5
nA
V R = 70 V
10 4
0.5
max.
5
10 mA
1 mA
10 3
0.1 mA
5
70 V
25 V
typ.
10 2
5
10 1
0
0
50
Semiconductor Group
Semiconductor Group
100
C
TA
150
0
44
50
100
C
TA
150
Apr-24-1998
1998-11-01
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