EMH2408 Ordering number : ENA1170 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2408 General-Purpose Switching Device Applications Features • • • The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive. Halogen free cpmpliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) Drain Current (Pulse) ID 4 A PW≤10μs, duty cycle≤1% 16 A Allowable Power Dissipation IDP PD When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 1.0 W Total Dissipation PT When mounted on ceramic substrate (900mm2✕0.8mm) 1.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V Ratings min typ Unit max 20 V 1 μA ±10 μA Forward Transfer Admittance VGS(off) ⏐yfs⏐ VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A RDS(on)1 RDS(on)2 ID=4A, VGS=4.5V ID=1A, VGS=2.5V 34 45 Static Drain-to-Source On-State Resistance 49 67 mΩ RDS(on)3 ID=0.5A, VGS=1.8V 74 115 mΩ Cutoff Voltage Marking : LH 0.4 2.0 1.3 3.4 V S mΩ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 90308PE TI IM TC-00001558 No. A1170-1/4 EMH2408 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss VDS=10V, f=1MHz 345 pF Output Capacitance Coss VDS=10V, f=1MHz 67 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 52 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9.2 ns Rise Time tr td(off) See specified Test Circuit. 60 ns See specified Test Circuit. 30 ns tf Qg See specified Test Circuit. 38 ns VDS=10V, VGS=4.5V, ID=4A 4.7 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4.5V, ID=4A VDS=10V, VGS=4.5V, ID=4A 0.65 Gate-to-Drain “Miller” Charge 1.6 nC Diode Forward Voltage VSD IS=4A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge Package Dimensions 0.8 1.2 V Electrical Connection unit : mm (typ) 7045-002 0.2 8 0.2 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.125 4 0.5 0.2 1 2.1 5 1.7 8 7 1 2.0 0.05 0.75 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 2 3 4 Top view SANYO : EMH8 Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=2A RL=5Ω VIN D VOUT PW=10μs D.C.≤1% G EMH2408 P.G 50Ω S No. A1170-2/4 EMH2408 ID -- VDS 1.8V 4.5V VDS=10V 4.5 4.0 1.5V 2.0 1.5 1.0 3.5 3.0 2.5 2.0 1.5 1.0 VGS=1.2V 0.5 0.5 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 ID=0.5A 90 1A 4A 80 70 60 50 40 30 20 10 1 2 3 4 5 6 Gate-to-Source Voltage, VGS -- V A =0.5 V, I D 8 . 1 = VGS 90 80 70 =1A V, I D 5 . 2 = VGS 4A , I D= =4.5V S VG 60 50 40 30 20 10 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13502 IS -- VSD 7 5 VDS=10V VGS=0V 3 2 Ta C 75° 1.0 °C 25 7 5 3 1.0 7 5 3 2 0.1 7 5 2 3 0.1 0.01 0.01 0.1 --25°C 2 5°C 25°C °C -25 =- Ta= 7 3 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 2.0 IT13500 100 IT13501 ⏐yfs⏐ -- ID 7 2 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 0.3 0.7 0.9 1.1 IT13504 Ciss, Coss, Crss -- VDS 1000 VDD=10V VGS=4.5V 3 0.5 Diode Forward Voltage, VSD -- V IT13503 SW Time -- ID 5 f=1MHz 7 2 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 8 7 1.5 RDS(on) -- Ta 0 --60 0 0 1.0 110 Ta=25°C 100 0.5 Gate-to-Source Voltage, VGS -- V IT13499 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.0 RDS(on) -- VGS 110 5 25° --25°C C 2.5 Ta= 75° C Drain Current, ID -- A 3.0 ID -- VGS 5.0 8.0V 3.5 Drain Current, ID -- A 2.5V 2.0V 4.0 100 7 5 td (off) 3 tf 2 td(on) tr 10 7 Ciss 3 2 100 Coss Crss 7 5 5 3 3 2 0.01 2 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT13505 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT13506 No. A1170-3/4 EMH2408 VGS -- Qg 3 2 VDS=10V ID=4A 4.0 10 7 5 3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.5 3.0 2.5 2.0 1.5 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Total Gate Charge, Qg -- nC 5.0 IT13507 PD -- Ta 1.4 Allowable Power Dissipation, PD -- W 4.5 PW≤10μs 10 0 1m μs s ID=4A DC 3 2 10 m op era 10 tio 1.0 7 5 Operation in this area is limited by RDS(on). s 0m s Ta =2 5° C) n( 3 2 0.1 7 5 3 2 0.5 ASO IDP=16A Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT13508 When mounted on ceramic substrate (900mm2✕0.8mm) 1.2 1.0 To t 0.8 al di 1u 0.6 ss ip ati on nit 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13509 Note on usage : Since the EMH2408 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.ged objects.ged objects. 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