ON MCH3478-TL-W N-channel power mosfet Datasheet

Ordering number : ENA1353B
MCH3478
N-Channel Power MOSFET
http://onsemi.com
30V, 2A, 165mΩ, Single MCPH3
Features
•
•
•
Low ON-resistance
1.8V drive
Protection diode in
•
•
Ultrahigh speed switching
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate to Source Voltage
Drain Current (DC)
Unit
30
Drain Current (PW≤10s)
ID
ID
Duty cycle≤1%
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm)
V
±12
V
2
A
2.5
A
8
A
0.8
W
Allowable Power Dissipation
PD
1.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (900mm2×0.8mm), PW=10s
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7019A-003
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
MCH3478-TL-H
MCH3478-TL-W
0.15
0.25
2.0
Packing Type : TL
1.6
2.1
0 to 0.02
FK
LOT No.
LOT No.
3
Marking
TL
0.65
2
Electrical Connection
0.3
3
0.07
0.85
0.25
1
1 : Gate
2 : Source
3 : Drain
1
MCPH3
2
Semiconductor Components Industries, LLC, 2013
December, 2013
D1113 TKIM TC-00003076/60612TKIM/21809PE MSIM TC-00001860 No. A1353-1/5
MCH3478
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
VGS(off)
| yfs |
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
Ratings
min
typ
Unit
max
30
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
0.4
VDS=10V, ID=1A
1.2
V
1
μA
±10
μA
1.3
2.0
V
S
RDS(on)1
ID=1A, VGS=4.5V
125
165
mΩ
RDS(on)2
ID=0.5A, VGS=2.5V
165
235
mΩ
RDS(on)3
ID=0.3A, VGS=1.8V
250
375
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
130
pF
21
pF
Crss
14
pF
4.4
ns
Rise Time
td(on)
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Qg
Total Gate Charge
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=2A
8.7
ns
16
ns
12
ns
1.7
nC
0.25
nC
0.38
IS=2A, VGS=0V
0.85
nC
1.2
V
Switching Time Test Circuit
VDD=15V
4.5V
0V
VIN
ID=1A
RL=15Ω
VIN
VOUT
D
PW=10μs
D.C.≤1%
G
P.G
50Ω
S
MCH3478
Ordering Information
Device
MCH3478-TL-H
MCH3478-TL-W
Package
Shipping
memo
MCPH3
3,000pcs./reel
Pb Free and Halogen Free
No. A1353-2/5
MCH3478
ID -- VDS
1.6
1.5V
0.8
0.6
0.6
25°C
0.2
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain to Source Voltage, VDS -- V
1.0
0
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
350
1A
250
200
150
100
50
0
0
1
2
3
4
5
6
7
8
9
Gate to Source Voltage, VGS -- V
2.0
2.5
IT14138
400
350
A
0.3
, I D=
1.8V
=
VGS
300
250
0.5A
, I D=
2.5V
=
.0A
VGS
I =1
4.5V, D
=
V GS
200
150
100
50
0
--60
10
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
IT14139
| yfs | -- ID
5
1.5
RDS(on) -- Ta
450
ID=0.3A
0.5A
300
1.0
Gate to Source Voltage, VGS -- V
Ta=25°C
400
0.5
IT14137
RDS(on) -- VGS
450
VDS=10V
160
IT14140
IS -- VSD
5
VGS=0V
3
3
140
2
Source Current, IS -- A
2
5° C
-2
=Ta
1.0
C
75°
°C
25
7
5
3
2
1.0
7
5
3
2
0.1
7
5
Ta=7
5°C
25°C
--25°C
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
0.8
0.4
VGS=1.2V
0.2
Forward Transfer Admittance, | yfs | -- S
1.0
C
1.0
1.2
--25°
1.2
1.4
Ta=
75°C
1.4
0.4
3
2
0.1
7
0.01
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
Drain Current, ID -- A
7
5
0
3
0.2
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
IT14141
SW Time -- ID
1.2
IT14142
Ciss, Coss, Crss -- VDS
7
VDD=15V
VGS=4.5V
f=1MHz
5
3
3
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
VDS=10V
1.8
Drain Current, ID -- A
1.6
ID -- VGS
2.0
1.8
V
7.0V 4.
5V
1.8
Drain Current, ID -- A
3.5V
2.5V
2.0
td(off)
tf
10
tr
7
td(on)
5
Ciss
100
7
5
3
Coss
2
Crss
10
3
2
0.1
2
7
5
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
10
IT14143
0
5
10
15
20
25
Drain to Source Voltage, VDS -- V
30
IT14144
No. A1353-3/5
MCH3478
VGS -- Qg
4.5
10
7
5
3.5
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V
4.0
3.0
2.5
2.0
1.5
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Total Gate Charge, Qg -- nC
1.8
2.0
IT14145
PD -- Ta
1.4
Allowable Power Dissipation, PD -- W
3
2
1.0
7
5
IDP=8A
0.1
7
5
PW≤10μs
10
0μ
s
1m
s
10
m
s
ID=2.5A(PW=10s)
ID=2A(DC)
DC
op
er
3
2
3
2
0.5
0
SOA
2
VDS=10V
ID=2A
ati
Operation in this area
is limited by RDS(on).
on
10
0
10 ms
s
(T
a=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2×0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain to Source Voltage, VDS -- V
2 3
5
IT14146
When mounted on ceramic substrate
(900mm2×0.8mm)
1.2
1.0
0.8
PW
=1
DC
0s
op
era
tio
n
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14147
No. A1353-4/5
MCH3478
Outline Drawing
MCH3478-TL-H, MCH3478-TL-W
Land Pattern Example
Mass (g) Unit
0.007 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
Note on usage : Since the MCH3478 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1353-5/5
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