Ordering number : ENA1353B MCH3478 N-Channel Power MOSFET http://onsemi.com 30V, 2A, 165mΩ, Single MCPH3 Features • • • Low ON-resistance 1.8V drive Protection diode in • • Ultrahigh speed switching Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings VDSS VGSS Gate to Source Voltage Drain Current (DC) Unit 30 Drain Current (PW≤10s) ID ID Duty cycle≤1% Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) V ±12 V 2 A 2.5 A 8 A 0.8 W Allowable Power Dissipation PD 1.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm), PW=10s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7019A-003 • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel MCH3478-TL-H MCH3478-TL-W 0.15 0.25 2.0 Packing Type : TL 1.6 2.1 0 to 0.02 FK LOT No. LOT No. 3 Marking TL 0.65 2 Electrical Connection 0.3 3 0.07 0.85 0.25 1 1 : Gate 2 : Source 3 : Drain 1 MCPH3 2 Semiconductor Components Industries, LLC, 2013 December, 2013 D1113 TKIM TC-00003076/60612TKIM/21809PE MSIM TC-00001860 No. A1353-1/5 MCH3478 Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS IGSS Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage VGS(off) | yfs | Forward Transfer Admittance Static Drain to Source On-State Resistance Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V Ratings min typ Unit max 30 VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 VDS=10V, ID=1A 1.2 V 1 μA ±10 μA 1.3 2.0 V S RDS(on)1 ID=1A, VGS=4.5V 125 165 mΩ RDS(on)2 ID=0.5A, VGS=2.5V 165 235 mΩ RDS(on)3 ID=0.3A, VGS=1.8V 250 375 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time 130 pF 21 pF Crss 14 pF 4.4 ns Rise Time td(on) tr Turn-OFF Delay Time td(off) Fall Time tf Qg Total Gate Charge Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=4.5V, ID=2A 8.7 ns 16 ns 12 ns 1.7 nC 0.25 nC 0.38 IS=2A, VGS=0V 0.85 nC 1.2 V Switching Time Test Circuit VDD=15V 4.5V 0V VIN ID=1A RL=15Ω VIN VOUT D PW=10μs D.C.≤1% G P.G 50Ω S MCH3478 Ordering Information Device MCH3478-TL-H MCH3478-TL-W Package Shipping memo MCPH3 3,000pcs./reel Pb Free and Halogen Free No. A1353-2/5 MCH3478 ID -- VDS 1.6 1.5V 0.8 0.6 0.6 25°C 0.2 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain to Source Voltage, VDS -- V 1.0 0 Static Drain to Source On-State Resistance, RDS(on) -- mΩ 350 1A 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 Gate to Source Voltage, VGS -- V 2.0 2.5 IT14138 400 350 A 0.3 , I D= 1.8V = VGS 300 250 0.5A , I D= 2.5V = .0A VGS I =1 4.5V, D = V GS 200 150 100 50 0 --60 10 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IT14139 | yfs | -- ID 5 1.5 RDS(on) -- Ta 450 ID=0.3A 0.5A 300 1.0 Gate to Source Voltage, VGS -- V Ta=25°C 400 0.5 IT14137 RDS(on) -- VGS 450 VDS=10V 160 IT14140 IS -- VSD 5 VGS=0V 3 3 140 2 Source Current, IS -- A 2 5° C -2 =Ta 1.0 C 75° °C 25 7 5 3 2 1.0 7 5 3 2 0.1 7 5 Ta=7 5°C 25°C --25°C Static Drain to Source On-State Resistance, RDS(on) -- mΩ 0.8 0.4 VGS=1.2V 0.2 Forward Transfer Admittance, | yfs | -- S 1.0 C 1.0 1.2 --25° 1.2 1.4 Ta= 75°C 1.4 0.4 3 2 0.1 7 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 7 5 0 3 0.2 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V IT14141 SW Time -- ID 1.2 IT14142 Ciss, Coss, Crss -- VDS 7 VDD=15V VGS=4.5V f=1MHz 5 3 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns VDS=10V 1.8 Drain Current, ID -- A 1.6 ID -- VGS 2.0 1.8 V 7.0V 4. 5V 1.8 Drain Current, ID -- A 3.5V 2.5V 2.0 td(off) tf 10 tr 7 td(on) 5 Ciss 100 7 5 3 Coss 2 Crss 10 3 2 0.1 2 7 5 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT14143 0 5 10 15 20 25 Drain to Source Voltage, VDS -- V 30 IT14144 No. A1353-3/5 MCH3478 VGS -- Qg 4.5 10 7 5 3.5 Drain Current, ID -- A Gate to Source Voltage, VGS -- V 4.0 3.0 2.5 2.0 1.5 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Total Gate Charge, Qg -- nC 1.8 2.0 IT14145 PD -- Ta 1.4 Allowable Power Dissipation, PD -- W 3 2 1.0 7 5 IDP=8A 0.1 7 5 PW≤10μs 10 0μ s 1m s 10 m s ID=2.5A(PW=10s) ID=2A(DC) DC op er 3 2 3 2 0.5 0 SOA 2 VDS=10V ID=2A ati Operation in this area is limited by RDS(on). on 10 0 10 ms s (T a= 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain to Source Voltage, VDS -- V 2 3 5 IT14146 When mounted on ceramic substrate (900mm2×0.8mm) 1.2 1.0 0.8 PW =1 DC 0s op era tio n 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14147 No. A1353-4/5 MCH3478 Outline Drawing MCH3478-TL-H, MCH3478-TL-W Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 Note on usage : Since the MCH3478 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1353-5/5