BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO −65 −45 −30 V Collector-Base Voltage VCBO −80 −50 −30 V VEBO −5.0 V IC −100 mAdc Rating BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 Emitter−Base Voltage Collector Current − Continuous 2 EMITTER 3 SOT−23 CASE 318 STYLE 6 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 MARKING DIAGRAM 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. PD RJA xxM Max 1 2 xx = Device Code M = Date Code PD RJA 417 °C/W TJ, Tstg −55 to +150 °C Preferred devices are recommended choices for future use and best overall value. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 8 1 Publication Order Number: BC856ALT1/D BC856ALT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) BC856 Series BC857 Series BC858, BC859 Series V(BR)CEO −65 −45 −30 − − − − − − V Collector −Emitter Breakdown Voltage (IC = −10 A, VEB = 0) BC856 Series BC857A, BC857B Only BC858, BC859 Series V(BR)CES −80 −50 −30 − − − − − − V Collector −Base Breakdown Voltage (IC = −10 A) BC856 Series BC857 Series BC858, BC859 Series V(BR)CBO −80 −50 −30 − − − − − − V Emitter −Base Breakdown Voltage (IE = −1.0 A) BC856 Series BC857 Series BC858, BC859 Series V(BR)EBO −5.0 −5.0 −5.0 − − − − − − V ICBO − − − − −15 −4.0 nA A hFE − − − 90 150 270 − − − − 125 220 420 180 290 520 250 475 800 − − − − −0.3 −0.65 − − −0.7 −0.9 − − −0.6 − − − −0.75 −0.82 fT 100 − − MHz Output Capacitance (VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) BC856, BC857, BC858 Series BC859 Series NF Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = −10 A, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC857C, BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VBE(sat) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) VBE(on) V V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) http://onsemi.com 2 dB − − − − 10 4.0 BC856ALT1 Series BC857/BC858/BC859 −1.0 1.5 TA = 25°C −0.9 VCE = −10 V TA = 25°C VBE(sat) @ IC/IB = 10 −0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 −0.7 VBE(on) @ VCE = −10 V −0.6 −0.5 −0.4 −0.3 −0.2 0.3 VCE(sat) @ IC/IB = 10 −0.1 0.2 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 IC, COLLECTOR CURRENT (mAdc) 0 −0.1 −0.2 −100 −200 1.0 −2.0 TA = 25°C −1.6 −1.2 −0.8 IC = −10 mA IC = −50 mA IC = −200 mA IC = −100 mA IC = −20 mA −0.4 0 −0.02 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 −10 −20 −0.1 −1.0 IB, BASE CURRENT (mA) −0.2 10 Cib 7.0 TA = 25°C 5.0 Cob 3.0 2.0 1.0 −0.4 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −10 −1.0 IC, COLLECTOR CURRENT (mA) −100 Figure 4. Base−Emitter Temperature Coefficient f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) Figure 3. Collector Saturation Region C, CAPACITANCE (pF) −100 −50 Figure 2. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain −0.5 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mAdc) −20 −30 −40 400 300 200 150 VCE = −10 V TA = 25°C 100 80 60 40 30 20 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3 BC856ALT1 Series BC856 TJ = 25°C VCE = −5.0 V TA = 25°C −0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) −1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 −0.6 VBE @ VCE = −5.0 V −0.4 −0.2 0.2 VCE(sat) @ IC/IB = 10 0 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −0.1 −0.2 −0.5 −50 −100 −200 −5.0 −10 −20 −1.0 −2.0 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage −2.0 −1.6 −1.2 IC = −10 mA −20 mA −50 mA −100 mA −200 mA −0.8 −0.4 TJ = 25°C 0 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 IB, BASE CURRENT (mA) −5.0 −10 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain −20 −1.0 −1.4 −1.8 −2.6 −3.0 −0.2 f, T CURRENT−GAIN − BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25°C Cib 10 8.0 Cob 4.0 2.0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) −0.5 −1.0 −50 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) −100 −200 Figure 10. Base−Emitter Temperature Coefficient 40 6.0 −55°C to 125°C −2.2 Figure 9. Collector Saturation Region 20 VB for VBE VCE = −5.0 V 500 200 100 50 20 −100 −1.0 −10 IC, COLLECTOR CURRENT (mA) −50 −100 Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BC856ALT1 Series 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE t1 t2 0.03 DUTY CYCLE, D = t1/t2 0.02 0.01 0.1 ZJC(t) = r(t) RJC RJC = 83.3°C/W MAX ZJA(t) = r(t) RJA RJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RJC(t) P(pk) 0.2 0.5 1.0 2.0 10 5.0 20 t, TIME (ms) 50 100 200 500 1.0k 2.0k 5.0k 10k Figure 13. Thermal Response The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. −200 IC, COLLECTOR CURRENT (mA) 1s 3 ms −100 −50 −10 −5.0 −2.0 −1.0 TA = 25°C TJ = 25°C BC558, BC559 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −5.0 −10 −30 −45 −65 −100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area http://onsemi.com 5 BC856ALT1 Series ORDERING INFORMATION Marking Package Shipping† BC856ALT1 3A SOT−23 3,000 / Tape & Reel BC856ALT3 3A SOT−23 10,000 / Tape & Reel BC856BLT1 3B SOT−23 BC856BLT1G 3B SOT−23 (Pb−Free) 3,000 / Tape & Reel BC856BLT3 3B SOT−23 10,000 / Tape & Reel BC857ALT1 3E SOT−23 3,000 / Tape & Reel BC857BLT1 3F SOT−23 3,000 / Tape & Reel BC857BLT3 3F SOT−23 BC857BLT3G 3F SOT−23 (Pb−Free) 10,000 / Tape & Reel BC857CLT1 3G SOT−23 3,000 / Tape & Reel BC857CLT1G 3G SOT−23 (Pb−Free) 3,000 / Tape & Reel BC858ALT1 3J SOT−23 BC858ALT1G 3J SOT−23 (Pb−Free) BC858BLT1 3K SOT−23 BC858BLT1G 3K SOT−23 (Pb−Free) 3,000 / Tape & Reel BC858BLT3 3L SOT−23 10,000 / Tape & Reel BC858CLT1 3L SOT−23 BC858CLT1G 3L SOT−23 (Pb−Free) BC858CLT3 3L SOT−23 BC858CLT3G 3L SOT−23 (Pb−Free) 10,000 / Tape & Reel BC859BLT1 4B SOT−23 3,000 / Tape & Reel BC859BLT3 4B SOT−23 10,000 / Tape & Reel BC859CLT1 4C SOT−23 3,000 / Tape & Reel BC859CLT3 4C SOT−23 10,000 / Tape & Reel Device 3,000 / Tape & Reel 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 BC856ALT1 Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−09 ISSUE AI NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09. A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 BC856ALT1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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