AP9922EO Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance G2 S2 D2 ▼ Capable of 2.5V gate drive ▼ Optimal DC/DC battery application S2 S1 TSSOP-8 G1 S1 BVDSS 20V RDS(ON) 15mΩ ID D1 6.8A Description D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V 3 ID@TA=25℃ Drain Current , VGS @ 4.5V 6.8 A ID@TA=70℃ 3 5.4 A 25 A Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1 W Linear Derating Factor 0.008 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 125 ℃/W 200615052 AP9922EO Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 20 - - V - 0.05 - V/℃ VGS=4.5V, ID=6A - - 15 mΩ VGS=2.5V, ID=4A - - 20 mΩ VDS=VGS, ID=1mA 0.5 - 1.2 V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS 2 VDS=4.5V, ID=6A - 22 - S o VDS=20V, VGS=0V - - 10 uA o Drain-Source Leakage Current (Tj=70 C) VDS=16V ,VGS=0V - - 100 uA Gate-Source Leakage VGS=±12V - - ±10 uA ID=6A - 25 40 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 9 - nC 2 td(on) Turn-on Delay Time VDS=15V - 11 - ns tr Rise Time ID=1A - 12 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=4.5V - 47 - ns tf Fall Time RD=15Ω - 23 - ns Ciss Input Capacitance VGS=0V - 1730 2770 pF Coss Output Capacitance VDS=20V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 240 - pF Rg Gate Resistance f=1.0MHz - 2.2 - Ω Min. Typ. IS=0.84A,VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=6A, VGS=0V, - 24 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 18 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 2 3.Surface mounted on 1 in copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad. AP9922EO 50 50 5.0V 4.5V 3.5V 2.5V ID , Drain Current (A) 40 40 30 V G =1.8V 20 10 30 V G =1.8V 20 10 0 0 0 1 1 2 2 0 3 1 V DS , Drain-to-Source Voltage (V) 1 2 2 3 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 35 ID=4A T A =25 ℃ ID=6A V G = 4.5 V 1.4 Normalized R DS(ON) 30 RDS(ON) (m Ω) 5.0V 4.5V 3.5V 2.5V o T A = 150 C ID , Drain Current (A) T A =25 o C 25 20 1.2 1.0 0.8 15 0.6 10 0 2 4 6 8 10 -50 12 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 6 5 Normalized VGS(th) (V) 1.5 IS(A) 4 3 T j =150 o C 2 T j =25 o C 1.0 0.5 1 0 0.0 0 0.2 0.4 0.6 0.8 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP9922EO f=1.0MHz 10000 12 VGS , Gate to Source Voltage (V) ID=6A V DS = 10 V V DS = 12 V V DS = 16 V C iss C (pF) 9 1000 6 C oss 3 C rss 100 0 0 10 20 30 40 50 1 60 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthja) Duty factor=0.5 100us 1ms 10 ID (A) 10ms 1 100ms 1s 0.1 T A =25 o C Single Pulse DC 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=208℃/W 0.001 0.0001 0.01 0.1 1 10 0.0010 0.0100 100 Fig 9. Maximum Safe Operating Area 0.1000 1.0000 10.0000 100.0000 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q