Filtronic FP750SOT343 Packaged low noise, medium power phemt Datasheet

PRELIMINARY DATA SHEET
FP750SOT343
PACKAGED LOW NOISE, MEDIUM POWER PHEMT
•
•
FEATURES
♦ 0.5 dB Noise Figure at 2 GHz
♦ 21 dBm P-1dB 2 GHz
♦ 17 dB Power Gain at 2 GHz
♦ 33 dBm IP3 at 2 GHz
♦ 45% Power-Added-Efficiency
DESCRIPTION AND APPLICATIONS
The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring low noise figure, medium output power
and/or high dynamic range. It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by
electron-beam photolithography. The FP750’s active areas are passivated with Si3N4, and the
SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that
require a surface-mount package.
The FP750SOT343 is designed for commercial systems for use in low noise amplifiers and
oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it
appropriate for use in receivers in WLL/RLL, WLAN, and GPS. This device is also suitable for
PCS and GSM base station front-ends.
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ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Symbol
IDSS
P-1dB
G-1dB
PAE
Noise Figure
NF
Output Third-Order Intercept Point
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Phone: (408) 988-1845
Fax: (408) 970-9950
Min
180
20
16
IP3
GM
IGSO
VP
|VBDGS|
Test Conditions
VDS = 2 V; VGS = 0 V
f=2GHz; VDS = 3.3 V; IDS = 110mA
f=2GHz; VDS = 3.3 V; IDS = 110mA
f=2GHz; VDS = 3.3 V;
IDS = 110mA; POUT = 21 dBm
f=2GHz; VDS = 3.3V; 40mA
f=2GHz; VDS = 3.3V; IDS = 60mA
f=2GHz; VDS = 3.3V; 110mA
VDS = 3.3V; IDS = 110mA
VDS = 2 V; VGS = 0 V
VGS = -5 V
VDS = 2 V; IDS = 2 mA
IGS = 2 mA
10
0.4
0.5
0.7
33
220
5
-1.2
12
|VBDGD|
IGD = 2 mA
10
13
http:// www.filss.com
170
Typ
220
21
17
45
Max
265
35
Units
mA
dBm
dB
%
dB
dB
dB
dBm
mS
µA
V
V
V
Revised: 2/01/02
Email: [email protected]
PRELIMINARY DATA SHEET
FP750SOT343
PACKAGED LOW NOISE, MEDIUM POWER PHEMT
•
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Notes:
•
•
•
•
Symbol
VDS
VGS
IDS
IG
PIN
TCH
TSTG
PTOT
Test Conditions
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
TAmbient = 22 ± 3 °C
—
TAmbient = 22 ± 3 °C
Min
-65
Max
5
-3
IDSS
7.5
175
175
175
1.0
Units
V
V
mA
mA
mW
ºC
ºC
W
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
PTOT = 1.0W – (0.007W/°C) x TPACK
where TPACK = source tab lead temperature.
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
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HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
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APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 2/01/02
Email: [email protected]
PRELIMINARY DATA SHEET
FP750SOT343
PACKAGED LOW NOISE, MEDIUM POWER PHEMT
•
PACKAGE OUTLINE
(dimensions in mm)
SOURCE
GATE
DRAIN
SOURCE
All information and specifications are subject to change without notice.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 2/01/02
Email: [email protected]
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