CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature (T-¾) Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters. 94 8638 Features • Suitable for pulse operation • • • • • • Standard T-¾ lensed miniature package Angle of half intensity ϕ = ± 12 ° e4 Peak wavelength λp = 950 nm Good spectral matching to Si photodetectors Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit VR 5 V mA Reverse Voltage Forward current Surge Forward Current tp ≤ 100 μs IF 100 IFSM 2 A PV 170 mW Power Dissipation Junction Temperature Tj 100 °C Tstg - 25 to + 100 °C Tsd 245 °C RthJA 450 K/W Storage Temperature Range Soldering Temperature t≤3s Thermal Resistance Junction/ Ambient Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward Voltage IF = 50 mA, tp ≤ 20 ms Breakdown Voltage IR = 100 μA Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Document Number 81002 Rev. 1.5, 30-Mar-06 Symbol Min VF V(BR) Cj Typ. Max Unit 1.3 1.6 V 5 V 50 pF www.vishay.com 1 CQY37N Vishay Semiconductors Optical Characteristics Tamb = 25 °C, unless otherwise specified Symbol Min Typ. Max Unit Radiant Intensity Parameter IF = 50 mA, tp ≤ 20 ms Test condition Ie 2.2 5 11 mW/sr Radiant Power IF = 50 mA, tp ≤ 20 ms φe 10 mW Temp. Coefficient of φe IF = 50 mA TKφe - 0.8 %/K ϕ ± 12 deg 950 nm Angle of Half Intensity Peak Wavelength IF = 50 mA λp Spectral Bandwidth IF = 50 mA Δλ 50 nm Rise time IF = 1.5 A, tp/T = 0.01, tp ≤ 10 μs tr 400 ns Fall Time IF = 1.5 A, tp/T = 0.01, tp ≤ 10 μs tf 450 ns ∅ 1.2 mm Virtual Source Diameter Typical Characteristics 250 10 4 200 10 3 I F - Forward Current (mA) PV - Power Dissipation (mW) (Tamb = 25 °C unless otherwise specified) 150 R thJA 100 50 0 20 40 60 80 10 0 0 100 Tamb - Ambient Temperature (°C) 94 8029 1 2 3 4 V F - Forward Voltage (V) 94 7996 Figure 1. Power Dissipation vs. Ambient Temperature Figure 3. Forward Current vs. Forward Voltage 125 1.2 V Frel - Relative Forward Voltage I F - Forward Current (mA) 10 1 10 -1 0 100 75 R thJA 50 25 0 0 94 7916 20 40 60 80 100 Tamb - Ambient Temperature (°C) Figure 2. Forward Current vs. Ambient Temperature www.vishay.com 2 10 2 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 0 94 7990 20 40 60 80 100 T amb - Ambient Temperature (°C) Figure 4. Relative Forward Voltage vs. Ambient Temperature Document Number 81002 Rev. 1.5, 30-Mar-06 CQY37N Vishay Semiconductors 1.25 Φe rel - Relative Radiant Power I e – Radiant Intensity ( mW/sr ) 100 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0.1 100 101 102 103 I F – Forward Current ( mA ) 94 7920 0 900 104 94 7994 Figure 8. Relative Radiant Power vs. Wavelength Figure 5. Radiant Intensity vs. Forward Current I e rel – Relative Radiant Intensity 0° Φ e - Radiant Power (mW) 100 10 1 1000 950 λ - Wavelength (nm) 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 1 10 100 0.4 0.2 0 0.2 0.4 0.6 94 7922 I F - Forward Current (mA) 13718 0.6 1000 Figure 6. Radiant Power vs. Forward Current Figure 9. Relative Radiant Intensity vs. Angular Displacement 1.6 I e rel ; Φe rel 1.2 IF = 20 mA 0.8 0.4 0 - 10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Figure 7. Rel. Radiant Intensity/Power vs. Ambient Temperature Document Number 81002 Rev. 1.5, 30-Mar-06 www.vishay.com 3 CQY37N Vishay Semiconductors Package Dimensions in mm 95 11262 www.vishay.com 4 Document Number 81002 Rev. 1.5, 30-Mar-06 CQY37N Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81002 Rev. 1.5, 30-Mar-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1