DGNJDZ BAV20 High voltage switching diode Datasheet

BAV19, BAV20, BAV21
Silicon Epitaxial Planar Diodes
Max. 0.5
High Voltage Switching Diodes
Min. 27.5
Max. 1.9
Black
Cathode Band
Black
Part No.
XXX
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Symbol
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 100 μs
at t = 1 μs
Total Power Dissipation
IF
mA
IFRM
625
mA
VR
V
V
Ptot
1
3
9
500
Tj
175
O
Tstg
- 65 to + 175
O
IFSM
Junction Temperature
Storage Temperature Range
Unit
120
200
250
100
150
200
250
VRRM
Continuous Forward Current
Repetitive Peak Forward Current
Value
A
mW
C
C
Characteristics at Ta = 25 OC
Parameter
Reverse Breakdown Voltage
at IR = 100 µA
Reverse Current
at VR = 100 V
at VR = 150 V
at VR = 200 V
at VR = 100 V, TA = 150 OC
at VR = 150 V, TA = 150 OC
at VR = 200 V, TA = 150 OC
Forward Voltage
at IF = 100 mA
at IF = 200 mA
Diode Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω
Symbol
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
Min.
Max.
120
200
250
-
-
100
100
100
100
100
100
nA
nA
nA
µA
µA
µA
VF
-
1
1.25
V
Cd
-
5
pF
trr
-
50
ns
V(BR)R
IR
Unit
V
BAV19, BAV20, BAV21
Rverse voltage vs. reverse current
Reverse current vs. reverse voltage
325
50
Reverse current, nA
Reverse voltage, V
Ta=25 C
300
Ta=25 C
40
30
20
10
275
0
3
5
10
20
30
Reverse current,
55
100
50
75
100
70
60
50
40
30
350
300
250
180
220
200
240
255
1
2
10
5
20
Forward current,
Forward voltage vs. forward current
50
100
A
Forward voltage vs. forward current
1.4
Ta=25 C
650
600
550
500
450
0.1
0.2
0.5
1
2
Forward current, mA
5
10
1.3
Ta=25 C
1.2
1.1
Forward voltage, V
Forward voltage, mV
Forward voltage, mV
155 175 195
400
Reverse voltage, V
725
700
135
Ta=25 C
450
90 Ta=25 C
80
Forward voltage, mV
Reverse current, nA
115
Forward voltage vs. forward current
Reverse current vs. reverse voltage
20
95
Reverse voltage, V
A
1
0.9
0.8
0.7
10
20
50
100
200
Forward current, mA
500
800
BAV19, BAV20, BAV21
Forward voltage vs. ambient temperature
Capacitance vs. reverse voltage
Ta=25 C
800
Capacitance, pF
Forward voltage, mV
1.3
Ta= -40 C
600
Ta=25 C
400
Ta=80 C
1.2
1.1
1
0.9
200
0.8
0.001
0.003
0.01
0.03
0.1
0.3
1
3
0
10
2
4
Forward current, mA
14 15
12
Average rectified current & forward current
vs. ambiebnt temperature
500
50
Fo
rw
ar
dc
400
Current, mA
Reverse recovery, nS
10
8
Reverse voltage, V
Reverse recovery time vs.
reverse recovery current
40
30
1
1.5
2
2.5
Reverse recovery current, mA
Power derating curve
500
400
DO-35 Pkg
300
200
SOT-23 Pkg
100
0
50
300
100
150
Average temperature ( C)
200
3
ur
re
nt
s
te a
dy
200
100
IF=IR=30mA
Rloop=100 Ohms
20
Power dissipation, mW
6
0
Aver
ag
e rec
tified
50
sta
te,
mA
curr
ent,
mA
100
Ambient temperature ( C)
150
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