AD ADN2526ACPZ-R7 11.3 gbps active back-termination, differential laser diode driver Datasheet

11.3 Gbps Active Back-Termination,
Differential Laser Diode Driver
ADN2526
FEATURES
GENERAL DESCRIPTION
3.3 V operation
Up to 11.3 Gbps operation
Typical 24 ps rise/fall times
Full back-termination of output transmission lines
Drives TOSAs with resistances ranging from 5 Ω to 50 Ω
Bias current range: 10 mA to 100 mA
Differential modulation current range: 10 mA to 80 mA
Voltage input control for bias and modulation currents
Data inputs sensitivity: 150 mV p-p diff
Automatic laser shutdown (ALS)
Cross point adjustment (CPA)
XFP-compliant bias current monitor
SFP+ MSA compliant
Optical evaluation board available
Compact 3 mm × 3 mm LFCSP
The ADN2526 laser diode driver is designed for direct modulation of packaged laser diodes that have a differential resistance
ranging from 5 Ω to 50 Ω. The active back-termination in the
ADN2526 absorbs signal reflections from the TOSA end of the
output transmission lines, enabling excellent optical eye quality to
be achieved even when the TOSA end of the output transmission
lines is significantly misterminated. ADN2526 is an SFP+ MSAcompliant device, and its small package and enhanced ESD
protection provide the optimum solution for compact modules
where laser diodes are packaged in low pin-count optical
subassemblies.
The modulation and bias currents are programmable via the
MSET and BSET control pins. By driving these pins with control
voltages, the user has the flexibility to implement various
average optical power and extinction ratio control schemes,
including closed-loop or look-up table control. The automatic
laser shutdown (ALS) feature allows the user to turn on/off the
bias and modulation currents by driving the ALS pin with a
LVTTL logic source.
APPLICATIONS
SONET OC-192 and SDH STM-64 optical transceivers
10 Gb Fibre Channel transceivers
10 Gb Ethernet optical transceivers
SFP+/XFP/X2/XENPAK/XPAK/MSA 300 optical modules
The product is available in a space-saving 3 mm × 3 mm LFCSP
specified from −40°C to +85°C.
FUNCTIONAL BLOCK DIAGRAM
VCC
CPA
ALS
VCC
ADN2526
VCC
IMODP
50Ω
50Ω
50Ω
GND
DATAP
IMOD
IMODN
VCC
CROSS
POINT
ADJUST
DATAN
IBMON
IBIAS
800Ω
800Ω
200Ω
VEE
BSET
200Ω
2Ω
07511-001
MSET
200Ω
Figure 1.
Rev. A
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Fax: 781.461.3113
©2009 Analog Devices, Inc. All rights reserved.
ADN2526
TABLE OF CONTENTS
Features .............................................................................................. 1
Automatic Laser Shutdown (ALS) ........................................... 11
Applications ....................................................................................... 1
Modulation Current ................................................................... 11
General Description ......................................................................... 1
Load Mistermination ................................................................. 12
Functional Block Diagram .............................................................. 1
Crosspoint Adjustment.............................................................. 13
Revision History ............................................................................... 2
Power Sequence .......................................................................... 13
Specifications..................................................................................... 3
Power Consumption .................................................................. 13
Thermal Specifications ................................................................ 4
Applications Information .............................................................. 14
Absolute Maximum Ratings............................................................ 6
Typical Application Circuit ....................................................... 14
ESD Caution .................................................................................. 6
Layout Guidelines....................................................................... 14
Pin Configuration and Function Descriptions ............................. 7
Design Example .......................................................................... 15
Typical Performance Characteristics ............................................. 8
Outline Dimensions ....................................................................... 16
Theory of Operation ...................................................................... 10
Ordering Guide .......................................................................... 16
Input Stage ................................................................................... 10
Bias Current ................................................................................ 10
REVISION HISTORY
8/09—Rev. 0 to Rev. A
Changes to θJ-PAD Maximum Value (Table 2)................................. 4
Changes to Figure 5 and Figure 6 ................................................... 8
1/09—Revision 0: Initial Version
Rev. A | Page 2 of 16
ADN2526
SPECIFICATIONS
VCC = VCCMIN to VCCMAX, TA = −40°C to +85°C, 50 Ω differential load resistance, unless otherwise noted. Typical values are specified at
TA = 25°C, IMOD 1 = 40 mA, unless otherwise noted.
D
Table 1.
Parameter
BIAS CURRENT (IBIAS)
Bias Current Range
Bias Current While ALS Asserted
Compliance Voltage 2
MODULATION CURRENT (IMODP, IMODN)
Modulation Current Range
Modulation Current While ALS Asserted
Rise Time (20% to 80%) 3, 4
Fall Time (20% to 80%)3, 4
Random Jitter3, 4
Deterministic Jitter3, 5
Pulse Width Distortion3, 4
Differential |S22|
Compliance Voltage2
DATA INPUTS (DATAP, DATAN)
Input Data Rate
Differential Input Swing
Differential |S11|
Input Termination Resistance
BIAS CONTROL INPUT (BSET)
BSET Voltage to IBIAS Gain
BSET Input Resistance
MODULATION CONTROL INPUT (MSET)
MSET Voltage to IMOD Gain
MSET Input Resistance
BIAS MONITOR (IBMON)
IBMON to IBIAS Ratio
Accuracy of IBIAS to IBMON Ratio
AUTOMATIC LASER SHUTDOWN (ALS)
VIH
VIL
IIL
IIH
ALS Assert Time
ALS Negate Time
Min
Typ
Max
Unit
Test Conditions/Comments
100
300
VCC
VCC
mA
μA
V
V
ALS = high
IBIAS = 100 mA
IBIAS = 10 mA
80
0.5
32.5
32.5
0.9
12
5
mA diff
mA diff
ps
ps
ps rms
ps p-p
ps
dB
dB
V
RLOAD = 5 Ω to 50 Ω differential
ALS = high
−16.8
100
Gbps
V p-p diff
dB
Ω
NRZ
Differential, ac-coupled
f < 10 GHz, Z0 = 100 Ω differential
Differential
90
1000
mA/V
Ω
10
0.6
0.6
10
24
24
0.4
7.2
2
−10
−14
VCC − 1.1
VCC + 1.1
0.15
11.3
1.6
50
78
1000
100
10
−5.0
−4.0
−2.5
−2
+5.0
+4.0
+2.5
+2
μA/mA
%
%
%
%
0.8
+30
200
2
V
V
μA
μA
μs
10
μs
2.0
−30
0
mA/V
Ω
Rev. A | Page 3 of 16
Includes pulse width distortion
PWD = (|THIGH – TLOW|)/2
5 GHz < f < 10 GHz, Z0 = 50 Ω differential
f < 5 GHz, Z0 = 50 Ω differential
See Figure 29
10 mA ≤ IBIAS < 20 mA, RIBMON = 1 kΩ
20 mA ≤ IBIAS < 40 mA, RIBMON = 1 kΩ
40 mA ≤ IBIAS < 70 mA, RIBMON = 1 kΩ
70 mA ≤ IBIAS < 100 mA, RIBMON = 1 kΩ
Rising edge of ALS to falling edge of IBIAS and
IMOD below 10% of nominal, see Figure 2
Falling edge of ALS to rise of IBIAS and IMOD
above 90% of nominal, see Figure 2
ADN2526
Parameter
POWER SUPPLY
VCC
ICC 6
ISUPPLY 7
CPA
Cross Point
Min
Typ
Max
Unit
Test Conditions/Comments
3.0
3.3
46
74
1.88
50
3.6
55
95
V
mA
mA
V
%
VBSET = VMSET = 0 V
VBSET = VMSET = 0 V; ISUPPLY = ICC + IMODP + IMODN
In NC mode (refer to Table 4)
From an optical eye in NC mode
1
IMOD is the total modulation current sink capability for a differential driver. IMOD = IMODP + IMODN, the dynamic current sank by the IMODP and IMODN pins.
Refers to the voltage between the pin for which the compliance voltage is specified and VEE.
The pattern used is a repetitive sequence of eight 1s followed by eight 0s at 11.3 Gbps.
4
Measured using the high speed characterization circuit shown in Figure 3.
5
The pattern used is K28.5 (00111110101100000101) at a 11.3 Gbps rate.
6
Only includes current in the VCC pins.
7
Without laser diode loaded.
2
3
THERMAL SPECIFICATIONS
Table 2.
Min
2.6
65
Typ
5.8
72.2
Max
10.7
79.4
125
Unit
°C/W
°C/W
°C
Conditions/Comments
Thermal resistance from junction to bottom of exposed pad
Thermal resistance from junction to top of package
ALS
NEGATE TIME
ALS
t
IBIAS
AND IMOD
90%
10%
t
ALS
ASSERT TIME
Figure 2. ALS Timing Diagram
Rev. A | Page 4 of 16
07511-002
Parameter
θJ-PAD
θJ-TOP
IC Junction Temperature
ADN2526
VEE
VEE
VEE
GND
10Ω
1kΩ
VBSET
TP1
TP2
10nF
GND
VCC
GND
VEE
VCC
ADN2526
Z0 = 50Ω 10nF Z0 = 50Ω
J2
DATAP
IMODP
GND
GND
GND
GND
Z0 = 50Ω 10nF Z0 = 50Ω
Z0 = 25Ω
J3
DATAN
GND
GND
GND
GND
Z0 = 25Ω
IMODN
35Ω
GND
VCC
VCC
MSET CPA
ALS
VMSET
GND
10nF
VEE
VEE
VCPA
J8
J5
GND
GND
VEE
VEE
GND
ATTENUATOR
OSCILLOSCOPE
ADAPTER
BIAS
TEE
ATTENUATOR
50Ω
GND
GND
BIAS TEE: PICOSECOND PULSE LABS MODEL 5542-219
ADAPTER: PASTERNACK PE-9436 2.92mm FEMALE-TO-FEMALE ADAPTER
ATTENUATOR: PASTERNACK PE-7046 2.92mm 20dB ATTENUATOR
22µF
VEE
GND
GND
50Ω
ADAPTER
GND
70Ω
Z = 50Ω
35Ω 0
GND
GND
Z0 = 50Ω
BIAS
TEE
GND
Figure 3. High Speed Characterization Circuit
Rev. A | Page 5 of 16
07511-003
BSET IBMON IBIAS
ADN2526
ABSOLUTE MAXIMUM RATINGS
VEE connected to supply ground.
Table 3.
Parameter
Supply Voltage, VCC to VEE
IMODP, IMODN to VEE
DATAP, DATAN to VEE
All Other Pins
HBM ESD on IMODP, IMODN
HBM ESD on All Other Pins
Junction Temperature
Storage Temperature Range
Soldering Temperature
(Less Than 10 sec)
Rating
−0.3 V to +4.2 V
1.1 V to 4.75 V
VCC − 1.8 V to VCC − 0.4 V
−0.3 V to VCC + 0.3 V
200 V
1 kV
150°C
−65°C to +150°C
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. A | Page 6 of 16
ADN2526
CPA 2
ADN2526
11 IBMON
ALS 3
TOP VIEW
(Not to Scale)
10 IBIAS
12 BSET
9 VEE
VCC 8
VCC 5
VEE 4
IMODP 7
PIN 1
INDICATOR
IMODN 6
MSET 1
NOTES
1. THE EXPOSED PAD ON THE BOTTOM OF THE PACKAGE
MUST BE CONNECTED TO VCC OR THE GND PLANE.
07511-004
14 DATAP
13 VCC
15 DATAN
16 VCC
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 4. Pin Configuration
Table 4. Pin Function Descriptions
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17 (EPAD)
1
Mnemonic
MSET
CPA
ALS
VEE
VCC
IMODN
IMODP
VCC
VEE
IBIAS
IBMON
BSET
VCC
DATAP
DATAN
VCC
Exposed Pad (EPAD)
I/O 1
AI
AI
DI
P
P
AI
AI
P
P
AI
AO
AI
P
AI
AI
P
P
Description
Modulation Current Control Input.
Adjustable Cross Point. Defaults to not connected (NC) mode (floating).
Automatic Laser Shutdown.
Negative Power Supply. Normally connected to system ground.
Positive Power Supply.
Modulation Current Sink, Negative.
Modulation Current Sink, Positive.
Positive Power Supply.
Negative Power Supply. Normally connected to system ground.
Bias Current Sink.
Bias Current Monitoring Output.
Bias Current Control Input.
Positive Power Supply.
Data Signal Positive Input.
Data Signal Negative Input.
Positive Power Supply.
The exposed pad on the bottom of the package must be connected to VCC or the GND plane.
AI = analog input, DI = digital input, P = power, AO = analog output.
Rev. A | Page 7 of 16
ADN2526
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, VCC = 3.3 V, unless otherwise noted.
27.0
9
26.5
8
7
6
25.5
JITTER (ps)
25.0
24.5
5
4
3
24.0
2
23.5
0
20
40
60
80
100
IMOD (mA)
0
07511-005
23.0
0
20
100
80
Figure 8. Deterministic Jitter vs. IMOD
27.0
0.35
26.5
0.30
26.0
IBIAS = 100
0.25
TOTAL IVCC (A)
25.5
25.0
24.5
IBIAS = 50
0.20
0.15
IBIAS = 10
0.10
24.0
0.05
23.5
0
20
40
60
80
100
IMOD (mA)
0
07511-006
23.0
0
10
20
30
40
50
60
70
80
90
100
IMOD (mA)
Figure 6. Fall Time vs. IMOD
Figure 9. Total Supply Current vs. IMOD
0.7
0
0.6
–5
–10
DIFFERENTIAL |S11| (dB)
0.5
0.4
0.3
0.2
0.1
–15
–20
–25
–30
0
0
20
40
60
IMOD (mA)
80
100
07511-007
–35
Figure 7. Random Jitter vs. IMOD
–40
0
1
2
3
4
5
6 7 8 9 10 11 12 13 14 15
FREQUENCY (GHz)
Figure 10. Differential |S11|
Rev. A | Page 8 of 16
07511-009
FALL TIME (ps)
60
IMOD (mA)
Figure 5. Rise Time vs. IMOD
JITTER (ps)
40
07511-008
1
07511-036
RISE TIME (ps)
26.0
ADN2526
0
DIFFERENTIAL |S22| (dB)
–5
–10
–15
–20
–25
–30
0
1
2
3
4
5
6 7 8 9 10 11 12 13 14 15
FREQUENCY (GHz)
07511-035
–40
07511-014
–35
Figure 11. Differential |S22|
Figure 14. Electrical Eye Diagram
(11.3 Gbps, PRBS31, IMOD = 80 mA)
16
14
OCCURRENCE (%)
12
10
8
6
07511-015
4
0
23
24
25
26
27
RISE TIME (ps)
28
29
30
07511-012
2
Figure 15. Filtered SONET OC192 Optical Eye Diagram (for Reference)
Figure 12. Worst-Case Rise Time Distribution
(VCC = 3.07 V, IBIAS = 100 mA, IMOD = 80 mA, TA = 85°C)
16
14
10
8
6
07511-016
4
2
0
23
24
25
26
27
FALL TIME (ps)
28
29
30
07511-013
OCCURRENCE (%)
12
Figure 16. Filtered 10 Gb Ethernet Optical Eye
Figure 13. Worst-Case Fall Time Distribution
(VCC = 3.07 V, IBIAS = 100 mA, IMOD = 80 mA, TA = 85°C)
Rev. A | Page 9 of 16
ADN2526
THEORY OF OPERATION
50Ω
50Ω
ADN2526
C
DATAP
DATAN
C
07511-018
As shown in Figure 1, the ADN2526 consists of an input stage
and two voltage-controlled current sources for bias and modulation. The bias current, which is available at the IBIAS pin, is
controlled by the voltage applied at the BSET pin and can be
monitored at the IBMON pin. The differential modulation
current, which is available at the IMODP and IMODN pins, is
controlled by the voltage applied to the MSET pin. The output
stage implements the active back-match circuitry for proper
transmission line matching and power consumption reduction.
The ADN2526 can drive a load having differential resistance
ranging from 5 Ω to 50 Ω. The excellent back-termination in
the ADN2526 absorbs the signal reflections from the TOSA
end, enabling excellent optical eye quality, even though the
TOSA is significantly misterminated.
DATA SIGNAL SOURCE
Figure 18. AC-Coupling the Data Source to the ADN2526 Data Inputs
BIAS CURRENT
The bias current is generated internally using a voltage-to-current
converter consisting of an internal operational amplifier and a
transistor, as shown in Figure 19.
VCC
INPUT STAGE
ADN2526
The input stage of the ADN2526 converts the data signal applied
to the DATAP and DATAN pins to a level that ensures proper
operation of the high speed switch. The equivalent circuit of the
input stage is shown in Figure 17.
R
R
IBMON
BSET
IBMON
800Ω
IBIAS
IBIAS
DATAP
50Ω
200Ω
VCC
200Ω
2Ω
07511-019
VCC
GND
Figure 19. Voltage-to-Current Converter Used to Generate IBIAS
Figure 17. Equivalent Circuit of the Input Stage
The DATAP and DATAN pins are terminated internally with a
100 Ω differential termination resistor. This minimizes signal
reflections at the input, which can otherwise lead to degradation in
the output eye diagram. It is not recommended to drive the
ADN2526 with single-ended data signal sources.
The ADN2526 input stage must be ac-coupled to the signal
source to eliminate the need for matching between the commonmode voltages of the data signal source and the input stage of
the driver (see Figure 18). The ac-coupling capacitors should
have an impedance much less than 50 Ω over the required
frequency range. Generally, this is achieved using 10 nF to 100 nF
capacitors.
The voltage-to-current conversion factor is set at 100 mA/V by
the internal resistors, and the bias current is monitored using a
current mirror with a gain equal to 1/100. By connecting a 1 kΩ
resistor between IBMON and VEE, the bias current can be monitored as a voltage across the resistor. A low temperature coefficient
precision resistor must be used for the IBMON resistor (RIBMON).
Any error in the value of RIBMON that is due to tolerances or to drift
in its value over temperature contributes to the overall error
budget for the IBIAS monitor voltage. If the IBMON voltage is
connected to an ADC for analog-to-digital conversion, RIBMON
should be placed close to the ADC to minimize errors due to
voltage drops on the ground plane.
The equivalent circuits of the BSET, IBIAS, and IBMON pins
are shown in Figure 20, Figure 21, and Figure 22.
In SFP+ MSA applications, the DATAP and DATAN pins need
to be connected to the SFP+ connector directly. This connection
requires enhanced ESD protection to support the SFP+ module
hot plug-in application.
Rev. A | Page 10 of 16
VCC
VCC
BSET
800Ω
200Ω
Figure 20. Equivalent Circuit of the BSET Pin
07511-020
DATAN
07511-017
50Ω
ADN2526
IBIAS
VCC
VCC
Table 5. ALS Functions
2kΩ
ALS Logic State
High
Low
Floating
07511-021
100Ω
2Ω
The ALS pin is compatible with 3.3 V CMOS and LVTTL logic
levels. Its equivalent circuit is shown in Figure 24.
Figure 21. Equivalent Circuit of the IBIAS Pin
VCC
IBIAS and IMOD
Disabled
Enabled
Enabled
VCC
VCC
500Ω
VCC
100Ω
ALS
07511-024
40kΩ
2kΩ
Figure 24. Equivalent Circuit of the ALS Pin
100Ω
MODULATION CURRENT
IBMON
07511-022
VCC
Figure 22. Equivalent Circuit of the IBMON Pin
The recommended configuration for BSET, IBIAS, and IBMON
is shown in Figure 23.
The modulation current can be controlled by applying a dc
voltage to the MSET pin. This voltage is converted into a dc
current by using a voltage-to-current converter using an
operational amplifier and a bipolar transistor, as shown in
Figure 25.
TO LASER CATHODE
VCC
IBIAS
IMODP
IBIAS
50Ω
ADN2526
GND
IBMON
gm × VO
FROM INPUT STAGE
R
1kΩ
MSET
07511-023
VBSET
IMODN
IBMON
BSET
IMOD
800Ω
VO
Figure 23. Recommended Configuration for the BSET, IBIAS, and IBMON Pins
The circuit used to drive the BSET voltage must be able to drive
the 1 kΩ input resistance of the BSET pin. For proper operation
of the bias current source, the voltage at the IBIAS pin must be
between the compliance voltage specifications for this pin over
supply, temperature, and bias current range (see Table 1). The
maximum compliance voltage is specified for only two bias
current levels (10 mA and 100 mA), but it can be calculated for
any bias current by
VCOMPLIANCE_MAX (V) = VCC (V) − 0.75 − 4.4 × IBIAS
(1)
See the Applications Information section for examples of
headroom calculations.
The function of the inductor, L, is to isolate the capacitance of
the IBIAS output from the high frequency signal path. For
recommended components, see Table 7.
AUTOMATIC LASER SHUTDOWN (ALS)
The ALS pin is a digital input that enables/disables both the bias
and modulation currents, depending on the logic state applied,
as shown in Table 5.
200Ω
ADN2526
GND
07511-025
L
Figure 25. Generation of Modulation Current on the ADN2526
This dc current is switched by the data signal applied to the
input stage (DATAP and DATAN pins) and amplified by the
output stage to generate the differential modulation current at
the IMODP and IMODN pins.
The output stage also generates the active back-termination,
which provides proper transmission line termination. Active
back-termination uses feedback around an active circuit to
synthesize a broadband termination resistance. This provides
excellent transmission line termination, while dissipating less
power than a traditional resistor passive back-termination.
A small portion of the modulation current flows in the virtual
50 Ω active back-termination resistor. All of the preset IMOD
modulation current, the range specified in Table 1, flows into
the external load. The equivalent circuits for MSET, IMODP, and
IMODN are shown in Figure 26 and Figure 27. The two 25 Ω
resistors in Figure 27 are not actual resistors. They represent the
active back-termination resistance.
Rev. A | Page 11 of 16
ADN2526
VCC
VCC
Using the resistance of the TOSA, the user can calculate the
voltage range that should be applied to the MSET pin to generate
the required modulation current range (see the example in the
Applications Information section).
MSET
07511-026
800Ω
200Ω
Figure 26. Equivalent Circuit of the MSET Pin
VCC
IMODN
VCC
IMODP
25Ω
25Ω
3.3Ω
07511-027
3.3Ω
Figure 27. Equivalent IMODP and IMODN Pins, As Seen From Laser Side
The recommended configuration of the MSET, IMODP,
and IMODN pins is shown in Figure 28. See Table 7 for the
recommended components.
The circuit used to drive the MSET voltage must be able to
drive the 1 kΩ resistance of the MSET pin. To be able to drive
80 mA modulation currents through the differential load, the
output stage of the ADN2526 (the IMODP and IMODN pins)
must be ac-coupled to the load. The voltages at these pins have
a dc component equal to VCC and an ac component with
single-ended, peak-to-peak amplitude of IMOD × 25 Ω. This is
the case even if the load impedance is less than 50 Ω differential,
because the transmission line characteristic impedance sets the
peak-to-peak amplitude. For proper operation of the output stage,
the voltages at the IMODP and IMODN pins must be between
the compliance voltage specifications for these pins over supply,
temperature, and modulation current range, as shown in Figure 30.
See the Applications Information section for examples of
headroom calculations.
IMODP, IMODN
IBIAS
VCC
ADN2526
L
Z0 = 25Ω
L
VCC + 1.1V
Z0 = 25Ω
C
IMODP
NORMAL OPERATION REGION
VCC
TOSA
Z0 = 25Ω
MSET
Z0 = 25Ω
C
IMODN
VCC – 1.1V
VEE
L
VCC VCC
07511-030
L
07511-028
VMSET
Figure 28. Recommended Configuration for the MSET, IMODP, and IMODN Pins
220
210
200
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
MAXIMUM
TYPICAL
MINIMUM
0
10
20
30
40
50
DIFFERENTIAL LOAD RESISTANCE (Ω)
60
Figure 30. Allowable Range for the Voltage at IMODP and IMODN
LOAD MISTERMINATION
Due to its excellent S22 performance, the ADN2526 can drive
differential loads that range from 5 Ω to 50 Ω. In practice, many
TOSAs have differential resistance less than 50 Ω. In this case, with
50 Ω differential transmission lines connecting the ADN2526 to
the load, the load end of the transmission lines are misterminated.
This mistermination leads to signal reflections back to the driver.
The excellent back-termination in the ADN2526 absorbs these
reflections, preventing their reflection back to the load. This
enables excellent optical eye quality to be achieved, even when
the load end of the transmission lines is significantly misterminated. The connection between the load and the ADN2526 must
be made with 50 Ω differential (25 Ω single-ended) transmission
lines so that the driver end of the transmission lines is properly
terminated.
07511-029
IMOD/VMSET (mA/V)
The ratio between the voltage applied to the MSET pin and the
differential modulation current available at the IMODP and
IMODN pins is a function of the load resistance value, as shown
in Figure 29.
Figure 29. MSET Voltage-to-Modulation Current Ratio vs.
Differential Load Resistance
Rev. A | Page 12 of 16
ADN2526
CROSSPOINT ADJUSTMENT
The optical eye cross point is adjustable between 35% and 65%
using the cross point adjust (CPA) control input. The equivalent
circuit for the CPA pin is shown in Figure 31. In a default CPA
setting, leave CPA unconnected (maintain pin-to-pin compatibility with the ADN2525). The internal bias circuit presents about
1.9 V at the CPA pin and the eye cross point is set to 50%. To set
the cross point at various points, apply an external voltage to the
CPA pin.
junction-to-ambient thermal resistance (θJA) do not yield
accurate results.
THERMAL COMPOUND
MODULE CASE
TTOP
DIE
TJ
THERMOCOUPLE
PACKAGE
T PAD
07511-032
PCB
COPPER PLANE
VIAS
7kΩ
7kΩ
Figure 32. Typical Optical Module Structure
7kΩ
The parameters in Table 6 can be used to estimate the IC
junction temperature.
VCC
Table 6. Definitions
07511-031
CPA
Figure 31. Equivalent Circuit for CPA Pin
POWER SEQUENCE
To ensure reliable operation, the recommended power-up
sequence is: the supply rail to ADN2526 first, then the BSET
pin, followed by the MSET pin, and, finally, the CPA pin.
Parameter
TTOP
TPAD
TJ
P
θJ-TOP
Description
Temperature at the top of the package
Temperature at the package exposed paddle
IC junction temperature
Power dissipation
Thermal resistance from the IC junction to
the package top
Thermal resistance from the IC junction to
the package exposed paddle
Unit
°C
°C
°C
W
°C/W
To turn off the ADN2526, the operation is reversed: shut down
CPA first, then MSET, followed by BSET, and, last, the supply rail.
θJ-PAD
POWER CONSUMPTION
TTOP and TPAD can be determined by measuring the temperature
at points inside the module, as shown in Figure 32. The thermocouples should be positioned to obtain an accurate measurement
of the package top and paddle temperatures. Using the model
shown in Figure 33, the junction temperature can be calculated by
⎛V
⎞
P = VCC × ⎜ MSET + I SUPPLY ⎟ + VIBIAS × IBIAS
13.5
⎝
⎠
where:
VCC is the power supply voltage.
VMSET is the voltage applied to the MSET pin.
ISUPPLY is the sum of the currents that flow into VCC, IMODP,
and IMODN, which are sank by the ADN2526 when VBSET =
VMSET = 0 V, expressed in amps (see Table 1).
VIBIAS is the average voltage presented on the IBIAS pin.
IBIAS is the bias current sank by the ADN2526.
TJ =
(
)
P × θ J −PAD × θ J −TOP + TTOP × θ J − PAD + TPAD × θ J −TOP
θ J −PAD + θ J −TOP
where:
θJ-TOP and θJ-PAD are given in Table 2.
P is the power dissipated by the ADN2526.
TTOP
θJ-TOP
Considering VBSET/IBIAS = 10 mV/mA as the conversion factor
from VBSET to IBIAS, the dissipated power becomes
P
⎛V
⎞ V
P = VCC × ⎜ MSET + I SUPPLY ⎟ + BSET × VIBIAS
13
.
5
10
⎝
⎠
θJ-PAD
TPAD
To ensure long-term reliable operation, the junction temperature of the ADN2526 must not exceed 125°C, as specified in
Table 2. For improved heat dissipation, the SFP+ module case
can work as a heat sink, as shown in Figure 32. A compact
optical module is a complex thermal environment, and
calculations of device junction temperature using the package
Rev. A | Page 13 of 16
TTOP
07511-033
The power dissipated by the ADN2526 is given by
°C/W
Figure 33. Electrical Model for Thermal Calculations
ADN2526
APPLICATIONS INFORMATION
TYPICAL APPLICATION CIRCUIT
LAYOUT GUIDELINES
Figure 34 shows the typical application circuit for the ADN2526.
The dc voltages applied to the BSET and MSET pins control the
bias and modulation currents. The bias current can be monitored
as a voltage drop across the 1 kΩ resistor connected between
the IBMON pin and GND. The ALS pin allows the user to turn
on or turn off the bias and modulation currents, depending on
the logic level applied to the pin. The data signal source must be
connected to the DATAP and DATAN pins of the ADN2526
using 50 Ω transmission lines. The modulation current outputs,
IMODP and IMODN, must be connected to the load (TOSA)
using 50 Ω differential (25 Ω single-ended) transmission lines.
It is recommended that the components shown in Table 7 be
used between the ADN2526 and the TOSA for an example ac
coupling circuit. For up-to-date component recommendations,
contact your local Analog Devices, Inc., sales representative.
Due to the high frequencies at which the ADN2526 operates,
care should be taken when designing the PCB layout to obtain
optimum performance. Well controlled transmission line
impedance must be used for the high speed signal paths. The
length of the transmission lines must be kept to a minimum to
reduce losses and pattern-dependent jitter. The PCB layout
must be symmetrical, on both the DATAP and DATAN inputs
and the IMODP and IMODN outputs, to ensure a balance
between the differential signals. All VCC and VEE pins must be
connected to solid copper planes by using low inductance
connections. When the connections are made through vias,
multiple vias should be used in parallel to reduce the parasitic
inductance. Each VEE pin must be locally decoupled with high
quality capacitors. If proper decoupling cannot be achieved
using a single capacitor, the user can use multiple capacitors in
parallel for each VEE pin. A 20 μF tantalum capacitor must be
used as a general decoupling capacitor for the entire module. For
guidelines on the surface-mount assembly of the ADN2526, see
the Amkor Technology® Application Notes for Surface Mount
Assembly of Amkor’s MicroLeadFrame® (MLF®) Packages.
Working with a TOSA laser sample, the circuit in Figure 34
delivers optical performance shown in Figure 15 and Figure 16.
For additional applications information and optical eye performance of other laser samples, contact your local Analog Devices
sales representative.
Table 7. Recommended Components for AC-Coupling
Component
R1, R2
R3, R4
C3, C4
L2, L3
L6, L7
L1, L4, L5, L8
Value
36 Ω
200 Ω
100 nF
20 nH
0402 size ferrite
10 μH
Description
0603 size resistor
0603 size resistor
0603 size capacitor, Phycomp 223878615649
0402 size inductor, Murata LQW15AN20NJ0
Murata BLM15HG102SN1
0603 size inductor, Murata LQM21FN100M70L
VCC
GND
BSET
R5
1kΩ
GND
C5
10nF
TP1
L1
R1
L8
R4
VCC
VCC
BSET IBMON IBIAS VEE
VCC
VCC
Z0 = 50Ω
VCC
L2
L7
Z0 = 25Ω
DATAP
DATAP
C1
DATAN
DATAN
Z0 = 25Ω
Z0 = 25Ω
TOSA
IMODN
C2
VCC
C4
GND
ADN2526
Z0 = 50Ω
Z0 = 25Ω
IMODP
VCC
MSET CPA
ALS
VCC
VEE
GND
L3
VCC
C3
L6
VCC
C6
10nF
3.3V
VCC
C7
200µF
GND
CPA
ALS
L4
R2
L5
R3
GND
VCC
Figure 34. Typical Application Circuit
Rev. A | Page 14 of 16
VCC
07511-034
MSET
ADN2526
DESIGN EXAMPLE
This design example covers:
•
•
Headroom calculations for the IBIAS, IMODP, and
IMODN pins.
Calculation of the typical voltage required at the BSET and
MSET pins to produce the desired bias and modulation
currents.
This design example assumes that the resistance of the TOSA is
25 Ω, the forward voltage of the laser at low current is VF = 1 V,
IBIAS = 40 mA, IMOD = 60 mA, and VCC = 3.3 V.
Headroom Calculations
To ensure proper device operation, the voltages on the IBIAS,
IMODP, and IMODN pins must meet the compliance voltage
specifications in Table 1.
VLB is the dc voltage drop across L1, L2, L3, and L4. Assuming
that VLB = 0 V and IMOD = 60 mA, the minimum voltage at the
modulation output pins is equal to
VCC − (IMOD × 25)/2 = VCC − 0.75
VCC − 0.75 > VCC − 1.1 V, which satisfies the requirement.
The maximum voltage at the modulation pins is equal to
VCC + (IMOD × 25)/2 = VCC + 0.75
VCC + 0.75 < VCC + 1.1 V, which satisfies the requirement.
Headroom calculations must be repeated for the minimum and
maximum values of the required IBIAS and IMOD ranges to
ensure proper device operation over all operating conditions.
BSET and MSET Pin Voltage Calculation
Considering the typical application circuit shown in Figure 34,
the voltage at the IBIAS pin can be written as
VIBIAS = VCC − VF − (IBIAS × RTOSA) − VLA
where:
VCC is the supply voltage.
VF is the forward voltage across the laser at low current.
RTOSA is the resistance of the TOSA.
VLA is the dc voltage drop across L5, L6, L7, and L8.
To set the desired bias and modulation currents, the BSET and
MSET pins of the ADN2526 must be driven with the appropriate
dc voltage. The voltage range required at the BSET pin to generate
the required IBIAS range can be calculated using the BSET voltage
to IBIAS gain specified in Table 1. Assuming that IBIAS = 40 mA
and the typical IBIAS/VBSET ratio of 100 mA/V, the BSET voltage
is given by
VBSET =
100 mA/V
=
40
= 0.4 V
100
The BSET voltage range can be calculated using the required
IBIAS range and the minimum and maximum BSET voltage to
IBIAS gain values specified in Table 1.
For proper operation, the minimum voltage at the IBIAS pin
should be greater than 0.6 V, as specified by the minimum
IBIAS compliance specification in Table 1.
The voltage required at the MSET pin to produce the desired
modulation current can be calculated using
Assuming that the voltage drop across the 25 Ω transmission
lines is negligible and that VLA = 0 V, VF = 1 V, and IBIAS =
40 mA
VMSET =
VIBIAS = 3.3 − 1 − (0.04 × 25) = 1.3 V
IMOD
K
where K is the MSET voltage to IMOD ratio.
VIBIAS = 1.3 V > 0.6 V, which satisfies the requirement.
The maximum voltage at the IBIAS pin must be less than the
maximum IBIAS compliance specification as described by
VCOMPLIANCE_MAX = VCC − 0.75 − 4.4 × IBIAS
IBIAS (mA)
(2)
For this example,
VCOMPLIANCE_MAX = VCC – 0.75 − 4.4 × 0.04 = 2.53 V
The value of K depends on the actual resistance of the TOSA.
It can be read using the plot shown in Figure 29. For a TOSA
resistance of 25 Ω, the typical value of K is equal to 120 mA/V.
Assuming that IMOD = 60 mA and using the preceding
equation, the MSET voltage is given by
VMSET =
VIBIAS = 1.3 V < 2.53 V, which satisfies the requirement.
To calculate the headroom at the modulation current pins
(IMODP and IMODN), the voltage has a dc component equal
to VCC, due to the ac-coupled configuration, and a swing equal
to IMOD × 25 Ω. For proper operation of the ADN2526, the
voltage at each modulation output pin should be within the
normal operation region shown in Figure 30.
IMOD (mA)
120 mA/V
=
60
= 0. 5 V
120
The MSET voltage range can be calculated using the required
IMOD range and the minimum and maximum K values. These
can be obtained from the minimum and maximum curves in
Figure 29.
Rev. A | Page 15 of 16
ADN2526
OUTLINE DIMENSIONS
0.60 MAX
3.00
BSC SQ
BOTTOM VIEW
0.45
TOP
VIEW
13
12
2.75
BSC SQ
0.80 MAX
0.65 TYP
12° MAX
SEATING
PLANE
0.05 MAX
0.02 NOM
0.30
0.23
0.18
1
EXPOSED
PAD
0.50
BSC
0.90
0.85
0.80
16
9
4
8
5
PIN 1
INDICATOR
*1.65
1.50 SQ
1.35
0.25 MIN
1.50 REF
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
0.20 REF
*COMPLIANT TO JEDEC STANDARDS MO-220-VEED-2
EXCEPT FOR EXPOSED PAD DIMENSION.
071708-A
PIN 1
INDICATOR
0.50
0.40
0.30
Figure 35. 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
3 mm × 3 mm Body, Very Thin Quad
(CP-16-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model
ADN2526ACPZ 1
ADN2526ACPZ-R21
ADN2526ACPZ-R71
1
Temperature Range
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Package Description
16-Lead LFCSP_VQ
16-Lead LFCSP_VQ, 7” Tape & Reel, 250-Piece Reel
16-Lead LFCSP_VQ, 7” Tape & Reel, 1,500-Piece Reel
Z = RoHS Compliant Part.
©2009 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D07511-0-8/09(A)
Rev. A | Page 16 of 16
Package Option
CP-16-3
CP-16-3
CP-16-3
Branding
F0C
F0C
F0C
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