AIKB20N60CT TRENCHSTOPTMSeries LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode Features: C •AutomotiveAECQ101qualified •DesignedforDC/ACconvertersforAutomotiveApplication •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature150°C •Dynamicallystresstested •Shortcircuitwithstandtime5µs •PositivetemperaturecoefficientinVCE(sat) •LowEMI •LowGateCharge •GreenPackage •TRENCHSTOPTMandFieldstoptechnologyfor600V applicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhighswitchingspeed Applications: G E C G •Maininverter •Climatecompressor •PTCheater •Motordrives E KeyPerformanceandPackageParameters Type AIKB20N60CT Datasheet www.infineon.com VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 20A 1.5V 150°C AK20DCT PG-TO263-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries MaximumRatings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 40.0 20.0 A ICpuls 60.0 A TurnoffsafeoperatingareaVCE≤600V,Tvj≤150°C - 60.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 40.0 20.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 156.0 W Operating junction temperature Tvj -40...+150 °C Storage temperature Tstg -40...+150 °C Pulsedcollectorcurrent,tplimitedbyTvjmax 1) µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.90 K/W Diode thermal resistance, junction - case Rth(j-c) - - 1.50 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) - - 65 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) - - 40 K/W 1) tp≤1µs Datasheet 3 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=20.0A Tvj=25°C Tvj=150°C - 1.50 1.85 2.05 - V - 1.65 1.65 2.05 - V 4.1 4.9 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=20.0A Tvj=25°C Tvj=150°C Gate-emitter threshold voltage VGE(th) IC=0.29mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=150°C - 550 40 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=20.0A - 11.0 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1100 - - 71 - - 32 - - 120.0 - nC - 7.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=20.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C - 183 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 14 - ns - 199 - ns - 42 - ns - 0.31 - mJ - 0.46 - mJ - 0.77 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25°C, VCC=600V,IC=20.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=131nH,Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 4 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=600V, IF=20.0A, diF/dt=880A/µs dirr/dt - 41 - ns - 0.31 - µC - 13.3 - A - 711 - A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 17 - ns - 217 - ns - 70 - ns - 0.47 - mJ - 0.60 - mJ - 1.07 - mJ - 201 - ns - 1.28 - µC - 16.6 - A - 481 - A/µs IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=600V,IC=20.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=131nH,Cσ=31pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=150°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=150°C, VR=600V, IF=20.0A, diF/dt=800A/µs dirr/dt 5 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries 140 30 25 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 120 100 80 60 40 20 15 10 5 20 0 25 50 75 100 125 0 150 25 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tj≤150°C) 100 125 150 60 50 VGE=20V VGE=20V 17V 17V 50 15V 13V 11V 40 9V 7V 30 20 15V 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 75 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤150°C) 60 11V 40 9V 7V 30 20 10 0 50 TC,CASETEMPERATURE[°C] 10 0 1 2 3 0 4 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tj=25°C) Datasheet 0 1 2 3 4 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tj=150°C) 6 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries 40 3.0 25°C Tj=150°C VCE(sat),COLLECTOR-EMITTERSATURATION[A] IC,COLLECTORCURRENT[A] 35 30 25 20 15 10 5 0 IC=10A IC=20A IC=40A 0 2 4 6 8 2.5 2.0 1.5 1.0 0.5 0.0 10 0 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=10V) 150 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 100 Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 100 10 1 50 Tj,JUNCTIONTEMPERATURE[°C] 0 5 10 15 20 25 30 35 100 10 40 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tj=150°C,VCE=400V, VGE=15/0V,RG=12Ω,Dynamictestcircuitin Figure E) Datasheet 0 10 20 30 40 50 60 70 RG,GATERESISTOR[Ω] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tj=150°C,VCE=400V, VGE=15/0V,IC=20A,Dynamictestcircuitin Figure E) 7 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries 1000 7 typ. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 25 50 75 100 125 6 5 4 3 2 1 0 -50 150 TG,JUNCTIONTEMPERATURE[°C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=20A,RG=12Ω,Dynamictestcircuitin Figure E) 100 150 2.4 2.0 2.0 Eoff Eon* Ets* E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 50 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.29mA) 2.4 1.6 1.2 0.8 Eoff Eon* Ets* 1.6 1.2 0.8 0.4 0.0 0 TG,JUNCTIONTEMPERATURE[°C] 0.4 0 5 10 15 20 25 30 35 0.0 40 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tj=150°C,VCE=400V, VGE=15/0V,RG=12Ω,Dynamictestcircuitin Figure E) Datasheet 0 10 20 30 40 50 60 70 RG,GATERESISTOR[Ω] Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tj=150°C,VCE=400V, VGE=15/0V,IC=20A,Dynamictestcircuitin Figure E) 8 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries 1.2 1.6 1.4 Eoff Eon* Ets* E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 1.0 0.8 0.6 0.4 Eoff Eon* Ets* 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0.0 25 50 75 100 125 0.0 300 150 Tj,JUNCTIONTEMPERATURE[°C] 350 400 450 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=20A,RG=12Ω,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tj=150°C,VGE=15/0V, IC=20A,RG=12Ω,Dynamictestcircuitin Figure E) 20 Ciss Coss Crss 1000 15 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 120V 480V 10 100 5 0 0 25 50 75 100 125 10 150 QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=20A) Datasheet 0 10 20 30 40 50 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 9 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries 12 300 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 350 250 200 150 100 50 0 12 14 16 18 10 8 6 4 2 0 20 10 VGE,GATE-EMITTERVOLTAGE[V] 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,Tj≤150°C) Figure 18. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE=400V,startatTj=25°C,Tjmax≤150°C) 1 ZthJC,TRANSIENTTHERMALRESISTANCE[K/W] ZthJC,TRANSIENTTHERMALRESISTANCE[K/W] 1 0.1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 0.01 i: 1 2 3 4 ri[K/W]: 0.07041 0.30709 0.3199 0.18715 τi[s]: 9.6E-5 6.8E-4 0.0108462 0.0692548 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.33997 0.44456 0.58146 0.13483 τi[s]: 1.3E-4 1.5E-3 0.0182142 0.0920745 1 0.001 1E-7 tp,PULSEWIDTH[s] Figure 19. IGBTtransientthermalresistanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) Datasheet 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. Diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) 10 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries 300 1.6 Tj=25°C, IF = 20A Tj=150°C, IF = 20A Tj=25°C, IF = 20A Tj=150°C, IF = 20A 1.4 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 250 200 150 100 50 1.2 1.0 0.8 0.6 0.4 0.2 0 600 900 1200 0.0 600 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) Tj=25°C, IF = 20A Tj=150°C, IF = 20A -150 20 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 1500 0 Tj=25°C, IF = 20A Tj=150°C, IF = 20A 15 10 5 -300 -450 -600 -750 900 1200 1500 -900 600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) Datasheet 1200 Figure 22. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 25 0 600 900 diF/dt,DIODECURRENTSLOPE[A/µs] 900 1200 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 24. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V,DynamictestcircuitinFigureE) 11 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries 60 2.5 Tj=25°C Tj=150°C IC=10A IC=20A IC=40A 2.0 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 50 40 30 20 1.0 0.5 10 0 1.5 0.0 0.5 1.0 1.5 2.0 0.0 2.5 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 0 50 100 150 Tj,JUNCTIONTEMPERATURE[°C] Figure 26. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 12 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries Package Drawing PG-TO263-3 MAX 4.57 0.25 0.85 1.15 0.65 1.40 9.45 7.90 10.31 8.60 MIN 4.30 0.00 0.65 0.95 0.33 1.17 8.51 7.10 9.80 6.50 2.54 5.08 2 14.61 2.29 0.70 1.00 16.05 9.30 4.50 10.70 3.65 1.25 Datasheet MAX 0.180 0.010 0.033 0.045 0.026 0.055 0.372 0.311 0.406 0.339 MIN 0.169 0.000 0.026 0.037 0.013 0.046 0.335 0.280 0.386 0.256 Z8B00003324 0 0 5 5 0.100 0.200 2 15.88 3.00 1.60 1.78 16.25 9.50 4.70 10.90 3.85 1.45 0.575 0.090 0.028 0.039 0.632 0.366 0.177 0.421 0.144 0.049 13 7.5mm 0.625 0.118 0.063 0.070 0.640 0.374 0.185 0.429 0.152 0.057 30-08-2007 01 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.1 2017-02-09 AIKB20N60CT TRENCHSTOPTMSeries RevisionHistory AIKB20N60CT Revision:2017-02-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-02-09 Data sheet created Datasheet 15 V2.1 2017-02-09 TrademarksofInfineonTechnologiesAG µHVIC™,µIPM™,µPFC™,AU-ConvertIR™,AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,CoolDP™, CoolGaN™,COOLiR™,CoolMOS™,CoolSET™,CoolSiC™,DAVE™,DI-POL™,DirectFET™,DrBlade™,EasyPIM™, EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,GaNpowIR™, HEXFET™,HITFET™,HybridPACK™,iMOTION™,IRAM™,ISOFACE™,IsoPACK™,LEDrivIR™,LITIX™,MIPAQ™, ModSTACK™,my-d™,NovalithIC™,OPTIGA™,OptiMOS™,ORIGA™,PowIRaudio™,PowIRStage™,PrimePACK™, PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,SmartLEWIS™,SOLIDFLASH™,SPOC™, StrongIRFET™,SupIRBuck™,TEMPFET™,TRENCHSTOP™,TriCore™,UHVIC™,XHP™,XMC™ TrademarksupdatedNovember2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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