IRF IRF7Y1405CM Hexfetâ® power mosfet thru-hole (to-257aa) Datasheet

PD - 94449
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRF7Y1405CM
55V, N-CHANNEL
Product Summary
Part Number
BVDSS
IRF7Y1405CM
55V
RDS(on)
ID
0.0153Ω 18A*
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
18*
18*
72
100
0.8
±20
308
18
10
1.8
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
05/31/02
IRF7Y1405CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
l Ciss
C oss
C rss
Typ Max Units
Test Conditions
55
—
—
V
VGS = 0V, ID = 250µA
—
0.057
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.0153
Ω
2.0
36
—
—
—
—
—
—
4.0
—
25
250
V
S( )
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
200
40
80
20
90
250
150
—
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5080
1300
300
—
—
—
VGS = 10V, ID = 18A ➃
VDS = VGS, ID = 250µA
VDS =15V, IDS = 18A ➃
VDS = 55V ,VGS=0V
VDS = 44V,
VGS = 0V, TJ=125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 18A
VDS = 44V
Ω
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nC
VDD = 28V, ID = 18A,
VGS = 10V, RG = 2.5Ω
ns
nH
pF
Measured from drain lead (6mm/
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
18*
72
1.3
100
350
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 18A, VGS = 0V ➃
Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.25
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRF7Y1405CM
1000
1000
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.7V
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
BOTTOM 3.7V
100
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
1
100
10
3.7V
3.7V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
Tj = 150°C
1
0.1
100
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (Α )
T J = 150°C
10
T J = 25°C
1
VDS = 25V
15
20µs PULSE
WIDTH
0.1
4.0
4.2
4.4
4.6
4.8
5.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
100
Fig 2. Typical Output Characteristics
100
3.8
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
3.6
1
5.2
ID = 18A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7Y1405CM
C, Capacitance (pF)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
6000
Ciss
4000
C
oss
2000
Crss
20
VGS , Gate-to-Source Voltage (V)
8000
0
1
10
ID = 18A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
60
VDS , Drain-to-Source Voltage (V)
ISD , Reverse Drain Current ( Α )
100
ID, Drain-to-Source Current (A)
T J = 150°C
10
T J = 25°C
1
VGS = 0V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage ( V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
180
240
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.2
120
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.1
VDS = 44V
VDS = 27V
VDS = 11V
1.8
OPERATION IN THIS AREA LIMITED BY RDS(on)
100µs
10
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF7Y1405CM
70
RD
V DS
LIMITED BY PACKAGE
VGS
60
D.U.T.
I D , Drain Current (A)
RG
+
-V DD
50
VGS
40
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
10
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
P DM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF7Y1405CM
1 5V
D R IV E R
L
VD S
D .U .T.
RG
+
V
- DD
IA S
VGS
20V
tp
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
EAS , Single Pulse Avalanche Energy (mJ)
800
ID
8.0A
11.4A
BOTTOM 18A
TOP
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
.3µF
QG
10V
D.U.T.
QGS
+
V
- DS
QGD
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRF7Y1405CM
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ 18A, di/dt ≤ 230 A/µs,
maximum junction temperature.
‚ VDD = 25 V, Starting TJ = 25°C, L= 1.9 mH
Peak IAS = 18A, VGS =10V, RG= 25Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 55V, TJ ≤ 150°C
Case Outline and Dimensions — TO-257AA
0.13 [.005]
A
10.66 [.420]
10.42 [.410]
3X Ø
3.81 [.150]
3.56 [.140]
5.08 [.200]
4.83 [.190]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
10.92 [.430]
10.42 [.410]
1
2
1.14 [.045]
0.89 [.035]
B
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
3X Ø
0.88 [.035]
0.64 [.025]
Ø 0.50 [.020]
C A
NOTES :
1.
2.
3.
4.
DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994.
CONTROLLING DIMENS ION: INCH.
DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
OUT LINE CONFORMS TO JEDEC OUTLINE T O-257AA.
3.05 [.120]
B
P IN AS S IGNME NT S
1 = GAT E
2 = DRAIN
3 = S OURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/02
www.irf.com
7
Similar pages