TI CC2640F128RGZT Cc2640 simplelink bluetooth smart wireless mcu Datasheet

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CC2640
SWRS176 – FEBRUARY 2015
CC2640 SimpleLink™ Bluetooth® Smart Wireless MCU
1 Device Overview
1.1
Features
1
• Microcontroller
– Powerful ARM® Cortex®-M3
– EEMBC CoreMark® score: 142
– Up to 48-MHz Clock Speed
– 128KB of In-System Programmable Flash
– 8-KB SRAM for Cache
– 20-KB Ultra-Low Leakage SRAM
– 2-Pin cJTAG and JTAG Debugging
– Supports Over-The-Air Upgrade (OTA)
• Ultra-Low Power Sensor Controller
– Can run autonomous from the rest of the
system
– 16-Bit Architecture
– 2-KB Ultra-Low Leakage SRAM for Code and
Data
• Efficient Code Size Architecture, Placing Drivers,
Bluetooth® Low Energy Controller, and Bootloader
in ROM
• RoHS-Compliant Packages
– 4-mm × 4-mm RSM QFN32 (10 GPIOs)
– 5-mm × 5-mm RHB QFN32 (15 GPIOs)
– 7-mm x 7-mm RGZ QFN48 (31 GPIOs)
• Peripherals
– All Digital Peripheral Pins can be Routed to any
GPIO
– 4 General-Purpose Timer Modules (8 × 16-Bit or
4 × 32-Bit Timer, PWM Each)
– 12-Bit ADC, 200-ksamples/s, 8-Channel Analog
MUX
– Continuous Time Comparator
– Ultra-Low Power Analog Comparator
– Programmable Current Source
– UART
– 2x SSI (SPI, µW, TI)
– I2C
– I2S
– Real-Time Clock (RTC)
– AES-128 Security Module
– True Random Number Generator (TRNG)
– 10, 15, or 31 GPIOs, Depending on Package
Option
– Support for 8 Capacitive Sensing Buttons
– Integrated Temperature Sensor
• External System
– On-Chip internal DC-DC Converter
– Very Few External Components
– Seamless Integration With the SimpleLink
CC2590 and CC2592 Range Extenders
– Pin Compatible With the SimpleLink CC13xx in
4-mm × 4-mm and 5-mm × 5-mm QFN
Packages
• Low Power
– Wide Supply Voltage Range
• Normal Operation: 1.8 to 3.8 V
• External Regulator Mode: 1.7 to 1.95 V
– Active-mode RX: 5.9 mA
– Active-mode TX at 0 dBm: 6.1 mA
– Active-mode TX at +5 dBm: 9.1 mA
– Active-mode MCU: 61 µA/MHz
– Active-mode MCU: 48.5 CoreMark/mA
– Active-mode Sensor Controller: 8.2 µA/MHz
– Standby: 1 µA (RTC Running and RAM/CPU
Retention)
– Shutdown: 100 nA (Wake-up on External
Events)
• RF Section
– 2.4 GHz RF Transceiver Compatible With
Bluetooth Low Energy (BLE) 4.1 specification
– Excellent Receiver Sensitivity (–97 dBm for
BLE), Selectivity, and Blocking Performance
– Programmable Output Power up to +5 dBm
– Single-ended or Differential RF Interface
– Suitable for Systems Targeting Compliance With
Worldwide Radio Frequency Regulations
• ETSI EN 300 328 (Europe)
• EN 300 440 Class 2 (Europe)
• FCC CFR47 Part 15 (US)
• ARIB STD-T66 (Japan)
• Tools and Development Environment
– Full-Feature and Low-Cost Development Kits
– Multiple Reference Designs for Different RF
Configurations
– Packet Sniffer PC Software
– Sensor Controller Studio
– SmartRF™ Studio
– SmartRF Flash Programmer 2
– IAR Embedded Workbench® for ARM
– Code Composer Studio™
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CC2640
SWRS176 – FEBRUARY 2015
1.2
•
•
•
Applications
Home and Building Automation
– Connected Appliances
– Lighting
– Locks
– Gateways
– Security Systems
Industrial
– Logistics
– Production and Manufacturing
– Automation
– Asset Tracking and Management
– Remote Display
– Cable Replacement
– HMI
– Access Control
Retail
– Beacons
– Advertising
– ESL / Price Tags
– Point of Sales / Payment Systems
1.3
www.ti.com
•
•
•
•
Health and Medical
– Thermometers
– SpO2
– Blood Glucose and Pressure Meters
– Weight-scales
– Vitals Monitoring
– Hearing Aids
Sports and Fitness
– Activity Monitors and Fitness Trackers
– Heart Rate Monitors
– Running Sensors
– Biking Sensors
– Sports Watches
– Gym Equipment
– Team Sports Equipment
HID
– Remote Controls
– Keyboards and Mice
– Gaming
Accessories
– Toys
– Trackers
– Luggage-tags
– Wearables
Description
The CC2640 is a wireless MCU targeting Bluetooth Smart applications.
The device is a member of the CC26xx family of cost-effective, ultra-low power, 2.4-GHz RF devices. Very
low active RF and MCU current, and low-power mode current consumption provides excellent battery
lifetime and allows operation on small coin cell batteries and in energy-harvesting applications.
The CC2640 contains a 32-bit ARM Cortex-M3 running at 48-MHz as the main processor and a rich
peripheral feature set, including a unique ultra-low power sensor controller, ideal for interfacing external
sensors and/or collecting analog and digital data autonomously while the rest of the system is in sleep
mode.
This makes the CC2640 ideal for a wide range of applications where long battery lifetime, small form
factor, and ease of use is important.
The Bluetooth Low Energy controller is embedded into ROM and run partly on an ARM Cortex®-M0
processor. This architecture improves overall system performance and power consumption and frees up
flash memory for the application.
The Bluetooth Smart stack is available free of charge from www.ti.com.
Device Information (1)
PART NUMBER
PACKAGE
BODY SIZE
CC2640F128RGZ
RGZ (QFN48)
7.00 mm × 7.00 mm
CC2640F128RHB
RHB (QFN32)
5.00 mm × 5.00 mm
(1)
2
For more information, see Section 9, Mechanical Packaging and Orderable Information.
Device Overview
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SWRS176 – FEBRUARY 2015
Device Information(1) (continued)
PART NUMBER
CC2640F128RSM
PACKAGE
BODY SIZE
RSM (QFN32)
4.00 mm × 4.00 mm
Device Overview
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CC2640
SWRS176 – FEBRUARY 2015
1.4
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Functional Block Diagram
Section 1.4 shows a block diagram for the CC2640.
Figure 1-1. Block Diagram
4
Device Overview
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SWRS176 – FEBRUARY 2015
Table of Contents
1
2
3
4
5
Device Overview ......................................... 1
5.16
Battery Monitor ...................................... 19
1.1
Features .............................................. 1
5.17
Continuous Time Comparator ....................... 20
1.2
Applications ........................................... 2
1.3
Description ............................................ 2
1.4
Functional Block Diagram ............................ 4
...................
.....................
5.20 DC Characteristics ..................................
5.21 Control Input AC Characteristics ....................
5.22 Synchronous Serial Interface (SSI) Characteristics.
5.23 Typical Characteristics ..............................
Detailed Description ...................................
6.1
Overview ............................................
6.2
Main CPU ...........................................
6.3
RF Core .............................................
6.4
Sensor Controller ...................................
6.5
Memory ..............................................
6.6
Debug ...............................................
6.7
Power Management .................................
6.8
Clock Systems ......................................
6.9
General Peripherals and Modules ..................
6.10 System Architecture .................................
Application Circuit .....................................
Device and Documentation Support ...............
8.1
Device Support ......................................
8.2
Documentation Support .............................
8.3
Additional Information ...............................
8.4
Trademarks..........................................
8.5
Electrostatic Discharge Caution .....................
8.6
Export Control Notice ...............................
8.7
Glossary .............................................
Revision History ......................................... 6
Device Comparison ..................................... 7
Terminal Configuration and Functions .............. 8
4.1
Pin Diagram – RSM Package ........................ 8
4.2
Signal Descriptions – RSM Package ................. 8
4.3
Pin Diagram – RHB Package
4.4
Signal Descriptions – RHB Package ................ 10
4.5
Pin Diagram – RGZ Package ....................... 11
4.6
Signal Descriptions – RGZ Package ................ 11
........................
6
9
Specifications ........................................... 13
5.1
Absolute Maximum Ratings ......................... 13
5.2
ESD Ratings
5.3
Recommended Operating Conditions ............... 13
5.4
Thermal Characteristics ............................. 14
5.5
Electrical Characteristics ............................ 15
5.6
General Characteristics ............................. 16
5.7
1-Mbps GFSK (Bluetooth Low Energy) – RX ....... 16
5.8
5.9
1-Mbps GFSK (Bluetooth Low Energy) – TX ....... 17
1-Mbps GFSK (Bluetooth Low Energy) – Common
RX/TX ............................................... 17
5.10
24-MHz Crystal Oscillator (XOSC_HF)
5.11
5.12
5.13
5.14
5.15
........................................
.............
32.768-kHz Crystal Oscillator (XOSC_LF) ..........
48-MHz RC Oscillator (RCOSC_HF) ...............
32-kHz RC Oscillator (RCOSC_LF).................
ADC Characteristics.................................
Temperature Sensor ................................
13
7
8
18
18
18
18
9
5.18
Low-Power Clocked Comparator
20
5.19
Programmable Current Source
20
21
21
21
22
25
25
25
25
26
27
27
28
29
29
30
31
33
33
35
35
36
36
36
36
19
Mechanical Packaging and Orderable
Information .............................................. 37
19
9.1
Packaging Information
..............................
Table of Contents
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5
CC2640
SWRS176 – FEBRUARY 2015
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2 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
6
DATE
REVISION
NOTES
February 2015
*
Initial Release
Revision History
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3 Device Comparison
Table 3-1. Device Family Overview
(1)
(2)
GPIO
Package (1)
20
31, 15, 10
RGZ, RHB, RSM
20
31, 15, 10
RGZ, RHB, RSM
128
20
31, 15, 10
RGZ, RHB, RSM
128
20
31, 15, 10
RGZ, RHB, RSM
Device
PHY Support
Flash (KB) RAM (KB)
CC2650F128xxx
Multi-Protocol (2)
128
CC2640F128xxx
Bluetooth low energy
128
CC2630F128xxx
IEEE 802.15.4 ( ZigBee®/6LoWPAN)
CC2620F128xxx
IEEE 802.15.4 (RF4CE)
Package designator replaces the xxx in device name to form a complete device name, RGZ is 7-mm x 7-mm QFN48, RHB is 5-mm x 5mm QFN32, and RSM is 4-mm x 4-mm QFN32.
The CC2650 supports all PHYs and can be reflashed to run all the supported standards.
Device Comparison
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SWRS176 – FEBRUARY 2015
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4 Terminal Configuration and Functions
NOTE
I/O pins marked in bold have high drive capabilities. I/O pins marked in italics have analog
capabilities.
17 VSS
18 DCDC_SW
19 VDDS_DCDC
20 VSS
21 RESET_N
22 DIO_5
23 DIO_6
Pin Diagram – RSM Package
24 DIO_7
4.1
DIO_8 25
16 DIO_4
DIO_9 26
15 DIO_3
VDDS 27
14 JTAG_TCKC
VDDR 28
13 JTAG_TMSC
CC26xx
VSS 29
12 DCOUPL
QFN32 4x4
RSM
X24M_N 30
X24M_P 31
11 VDDS2
10 DIO_2
3
4
5
6
7
8
VSS
X32K_Q1
X32K_Q2
VSS
DIO_0
2
RX_TX
1
RF_P
9
RF_N
VDDR_RF 32
DIO_1
Figure 4-1. RSM (4 mm × 4 mm) Pinout, 0.4-mm Pitch
4.2
Signal Descriptions – RSM Package
Table 4-1. Signal Descriptions – RSM Package
Pin Name
Pin
Pin Type
Description
RF_P
1
RF I/O
Positive RF input signal to LNA during RX
Positive RF output signal to PA during TX
RF_N
2
RF I/O
Negative RF input signal to LNA during RX
Negative RF output signal to PA during TX
RX_TX
4
RF I/O
Optional bias pin for the RF LNA
VDDS
27
Power
1.8 V to 3.8 V main chip supply (1)
VDDS2
11
Power
1.8 V to 3.8 V GPIO supply (1)
VDDS_DCDC
19
Power
1.8 V to 3.8 V DC/DC supply. Tie to ground for external
regulator mode (1.7 V to 1.95 V operation)
VDDR
28
Power
1.7 V to 1.95 V supply, typically connect to output of internal
DC/DC (2) (3)
VDDR_RF
32
Power
1.7 V to 1.95 V supply, typically connect to output of internal
DC/DC (4) (3)
DCOUPL
12
Power
1.27 V regulated digital-supply decoupling capacitor (3)
VSS
3, 7, 17, 20, 29
Power
Ground
(1)
(2)
(3)
(4)
8
See Section 8.2, technical reference manual for more details.
If internal DC/DC is not used, this pin is supplied internally from the main LDO.
Do not supply external circuitry from this pin.
If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO.
Terminal Configuration and Functions
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Table 4-1. Signal Descriptions – RSM Package (continued)
Pin Name
Pin
Pin Type
Description
DCDC_SW
18
Power
Output from internal DC/DC (1). Tie to ground for external
regulator mode (1.7 V to 1.95 V operation)
EGP
Power
Ground – Exposed Ground Pad
RESET_N
21
Digital input
Reset, active-low. No internal pullup
DIO_0
8
Digital I/O
GPIO, Sensor Controller, High drive capability
DIO_1
9
Digital I/O
GPIO, Sensor Controller, High drive capability
DIO_2
10
Digital I/O
GPIO, Sensor Controller, High drive capability
DIO_3
15
Digital I/O
GPIO, High drive capability, JTAG_TDO
DIO_4
16
Digital I/O
GPIO, High drive capability, JTAG_TDI
DIO_5
22
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_6
23
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_7
24
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_8
25
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_9
26
Digital/Analog I/O
GPIO, Sensor Controller, Analog
JTAG_TMSC
13
Digital I/O
JTAG TMSC
JTAG_TCKC
14
Digital I/O
JTAG TCKC
X32K_Q1
5
Analog I/O
32 kHz crystal oscillator pin 1
X32K_Q2
6
Analog I/O
32 kHz crystal oscillator pin 2
X24M_N
30
Analog I/O
24 MHz crystal oscillator pin 1
X24M_P
31
Analog I/O
24 MHz crystal oscillator pin 2
17 DCDC_SW
18 VDDS_DCDC
19 RESET_N
20 DIO_7
21 DIO_8
22 DIO_9
23 DIO_10
Pin Diagram – RHB Package
24 DIO_11
4.3
DIO_12 25
16 DIO_6
DIO_13 26
15 DIO_5
DIO_14 27
14 JTAG_TCKC
VDDS 28
13 JTAG_TMSC
CC26xx
VDDR 29
12 DCOUPL
QFN32 5x5
RHB
X24M_N 30
X24M_P 31
11 VDDS2
10 DIO_4
3
4
5
6
7
8
RX_TX
X32K_Q2
DIO_0
DIO_1
DIO_2
2
X32K_Q1
1
RF_P
9
RF_N
VDDR_RF 32
DIO_3
Figure 4-2. RHB (5 mm × 5 mm) Pinout, 0.5-mm Pitch
Terminal Configuration and Functions
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SWRS176 – FEBRUARY 2015
4.4
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Signal Descriptions – RHB Package
Table 4-2. Signal Descriptions – RHB Package
Pin Name
Pin
Pin Type
Description
RF_P
1
RF I/O
Positive RF input signal to LNA during RX
Positive RF output signal to PA during TX
RF_N
2
RF I/O
Negative RF input signal to LNA during RX
Negative RF output signal to PA during TX
RX_TX
3
RF I/O
Optional bias pin for the RF LNA
VDDS
28
Power
1.8 V to 3.8 V main chip supply (1)
VDDS2
11
Power
1.8 V to 3.8 V GPIO supply (1)
VDDS_DCDC
18
Power
1.8 V to 3.8 V DC/DC supply
VDDR
29
Power
1.7 V to 1.95 V supply, typically connect to output of internal
DC/DC (2) (3)
VDDR_RF
32
Power
1.7 V to 1.95 V supply, typically connect to output of internal
DC/DC (4) (3)
DCOUPL
12
Power
1.27 V regulated digital-supply decoupling (3)
DCDC_SW
17
Power
Output from internal DC/DC (1)
EGP
Power
Ground – Exposed Ground Pad
RESET_N
19
Digital input
Reset, active-low. No internal pullup
DIO_0
6
Digital I/O
GPIO, Sensor Controller
DIO_1
7
Digital I/O
GPIO, Sensor Controller
DIO_2
8
Digital I/O
GPIO, Sensor Controller, High drive capability
DIO_3
9
Digital I/O
GPIO, Sensor Controller, High drive capability
DIO_4
10
Digital I/O
GPIO, Sensor Controller, High drive capability
DIO_5
15
Digital I/O
GPIO, High drive capability, JTAG_TDO
DIO_6
16
Digital I/O
GPIO, High drive capability, JTAG_TDI
DIO_7
20
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_8
21
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_9
22
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_10
23
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_11
24
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_12
25
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_13
26
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_14
27
Digital/Analog I/O
GPIO, Sensor Controller, Analog
JTAG_TMSC
13
Digital I/O
JTAG TMSC, High drive capability
JTAG_TCKC
14
Digital I/O
JTAG TCKC
X32K_Q1
4
Analog I/O
32 kHz crystal oscillator pin 1
X32K_Q2
5
Analog I/O
32 kHz crystal oscillator pin 2
X24M_N
30
Analog I/O
24 MHz crystal oscillator pin 1
X24M_P
31
Analog I/O
24 MHz crystal oscillator pin 2
(1)
(2)
(3)
(4)
10
See Section 8.2, technical reference manual for more details.
If internal DC/DC is not used, this pin is supplied internally from the main LDO.
Do not supply external circuitry from this pin.
If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO.
Terminal Configuration and Functions
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25 JTAG_TCKC
26 DIO_16
27 DIO_17
29 DIO_19
28 DIO_18
30 DIO_20
31 DIO_21
32 DIO_22
33 DCDC_SW
34 VDDS_DCDC
35 RESET_N
Pin Diagram – RGZ Package
36 DIO_23
4.5
SWRS176 – FEBRUARY 2015
DIO_24 37
24 JTAG_TMSC
DIO_25 38
23 DCOUPL
DIO_26 39
22 VDDS3
DIO_27 40
21 DIO_15
DIO_28 41
20 DIO_14
DIO_29 42
19 DIO_13
CC26xx
DIO_30 43
18 DIO_12
QFN48 7x7
RGZ
VDDS 44
VDDR 45
17 DIO_11
16 DIO_10
X24M_N 46
15 DIO_9
X24M_P 47
14 DIO_8
13 VDDS2
4
5
6
7
8
9
X32K_Q2
DIO_0
DIO_1
DIO_2
DIO_3
DIO_4
DIO_7 12
3
X32K_Q1
DIO_6 11
2
DIO_5 10
1
RF_P
RF_N
VDDR_RF 48
Figure 4-3. RGZ (7 mm × 7 mm) Pinout, 0.5-mm Pitch
4.6
Signal Descriptions – RGZ Package
Table 4-3. Signal Descriptions – RGZ Package
Pin Name
Pin
Pin Type
Description
RF_P
1
RF I/O
Positive RF input signal to LNA during RX
Positive RF output signal to PA during TX
RF_N
2
RF I/O
Negative RF input signal to LNA during RX
Negative RF output signal to PA during TX
VDDS
44
Power
1.8 V to 3.8 V main chip supply (1)
VDDS2
13
Power
1.8 V to 3.8 V DIO supply (1)
VDDS3
22
Power
1.8 V to 3.8 V DIO supply (1)
VDDS_DCDC
34
Power
1.8 V to 3.8 V DC/DC supply
VDDR
45
Power
1.7 V to 1.95 V supply, typically connect to output of internal
DC/DC (2) (3)
VDDR_RF
48
Power
1.7 V to 1.95 V supply, typically connect to output of internal
DC/DC (4) (3)
DCOUPL
23
Power
1.27 V regulated digital-supply decoupling capacitor (3)
Power
Ground – Exposed Ground Pad
EGP
DCDC_SW
33
Power
Output from internal DC/DC (1)
RESET_N
35
Digital input
Reset, active-low. No internal pullup
DIO_0
5
Digital I/O
GPIO, Sensor Controller
(1)
(2)
(3)
(4)
See Section 8.2, technical reference manual for more details.
If internal DC/DC is not used, this pin is supplied internally from the main LDO.
Do not supply external circuitry from this pin.
If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO.
Terminal Configuration and Functions
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Table 4-3. Signal Descriptions – RGZ Package (continued)
Pin Name
Pin
Pin Type
Description
DIO_1
6
Digital I/O
GPIO, Sensor Controller
DIO_2
7
Digital I/O
GPIO, Sensor Controller
DIO_3
8
Digital I/O
GPIO, Sensor Controller
DIO_4
9
Digital I/O
GPIO, Sensor Controller
DIO_5
10
Digital I/O
GPIO, Sensor Controller, High drive capability
DIO_6
11
Digital I/O
GPIO, Sensor Controller, High drive capability
DIO_7
12
Digital I/O
GPIO, Sensor Controller, High drive capability
DIO_8
14
Digital I/O
GPIO
DIO_9
15
Digital I/O
GPIO
DIO_10
16
Digital I/O
GPIO
DIO_11
17
Digital I/O
GPIO
DIO_12
18
Digital I/O
GPIO
DIO_13
19
Digital I/O
GPIO
DIO_14
20
Digital I/O
GPIO
DIO_15
21
Digital I/O
GPIO
DIO_16
26
Digital I/O
GPIO, JTAG_TDO, High drive capability
DIO_17
27
Digital I/O
GPIO, JTAG_TDI, High drive capability
DIO_18
28
Digital I/O
GPIO
DIO_19
29
Digital I/O
GPIO
DIO_20
30
Digital I/O
GPIO
DIO_21
31
Digital I/O
GPIO
DIO_22
32
Digital I/O
GPIO
DIO_23
36
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_24
37
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_25
38
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_26
39
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_27
40
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_28
41
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_29
42
Digital/Analog I/O
GPIO, Sensor Controller, Analog
DIO_30
43
Digital/Analog I/O
GPIO, Sensor Controller, Analog
JTAG_TMSC
24
Digital I/O
JTAG TMSC, High drive capability
JTAG_TCKC
25
Digital I/O
JTAG TCKC
X32K_Q1
3
Analog I/O
32 kHz crystal oscillator pin 1
X32K_Q2
4
Analog I/O
32 kHz crystal oscillator pin 2
X24M_N
46
Analog I/O
24 MHz crystal oscillator pin 1
X24M_P
47
Analog I/O
24 MHz crystal oscillator pin 2
12
Terminal Configuration and Functions
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SWRS176 – FEBRUARY 2015
5 Specifications
Absolute Maximum Ratings (1) (2)
5.1
[over operating free-air temperature range (unless otherwise noted)] Under no circumstances must the absolute maximum
ratings be violated. Stress exceeding one or more of the limiting values may cause permanent damage to the device.
MIN
MAX
VDDR supplied by internal DC/DC regulator or
internal GLDO
–0.3
4.1
V
External regulator mode (VDDS and VDDR pins
connected on PCB)
–0.3
2.25
V
Voltage on any digital pin (4)
–0.3
VDDS+0.3, max
4.1
V
Voltage on crystal oscillator pins,
X32K_Q1, X32K_Q2, X24M_N and
X24M_P
–0.3
VDDR+0.3, max
2.25
V
Internal fixed or relative reference, voltage
scaling enabled
–0.3
VDDS
Internal fixed reference, voltage scaling disabled
–0.3
1.49
Internal relative reference, voltage scaling
disabled
–0.3
VDDS / 2.9
External reference, voltage scaling enabled
–0.3
min (Vref × 2.9,
VDDS)
External reference, voltage scaling disabled
–0.3
Vref
–0.3
1.6
V
+5
dBm
150
°C
Supply voltage, VDDS
(3)
Supply voltage, VDDS (3) and VDDR
Voltage on ADC input (Vin)
Voltage on external ADC reference
(Vref)
Input RF level
Tstg
(1)
(2)
(3)
(4)
Storage temperature
–40
UNIT
V
All voltage values are with respect to VDDS, unless otherwise noted.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
VDDS2 and VDDS3 needs to be at the same potential as VDDS.
Including analog capable DIO.
5.2
ESD Ratings
VALUE
VESD
(1)
(2)
5.3
Electrostatic discharge
(ESD) performance:
Human Body Model (HBM), per ANSI/ESDA/JEDEC
JS001 (1)
Charged Device Model (CDM), per JESD22-C101 (2)
All pins
±2500
RF pins
±750
non-RF pins
±750
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Recommended Operating Conditions
The operating conditions for CC2640 are listed below.
Ambient temperature range
MIN
MAX
–40
85
UNIT
°C
Operating supply voltage
(VDDS and VDDR), external
regulator mode
For operation in 1.8 V systems
(VDDS and VDDR pins connected on PCB, internal DC/DC
cannot be used)
1.7
1.95
V
Operating supply voltage
(VDDS)
For operation in battery-powered and 3.3 V systems
(internal DC/DC can be used to minimize power consumption)
1.8
3.8
V
Rising supply voltage slew rate
0
100
mV/us
Falling supply voltage slew rate
0
20
mV/us
Specifications
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Recommended Operating Conditions (continued)
The operating conditions for CC2640 are listed below.
MAX
UNIT
Falling supply voltage slew rate,
with low-power flash settings (1)
MIN
3
mV/us
Positive temperature gradient in No limitation for negative temperature gradient, or outside
standby (2)
standby mode
5
°C/s
(1)
(2)
For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22uF VDDS input capacitor (see Figure 71) should be used to ensure compliance with this slew rate.
Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in temperature. See
Section 5.13
5.4
Thermal Characteristics
RSM (°C/W) (1)
RHB (°C/W) (1)
RGZ (°C/W) (1)
Junction-to-ambient thermal resistance
36.9
32.8
29.6
ΘJCtop
Junction-to-case (top) thermal resistance
30.3
24.0
15.7
ΘJB
Junction-to-board thermal resistance
7.6
6.8
6.2
ΨJT
Junction-to-top characterization parameter
0.4
0.3
0.3
ΨJB
Junction-to-board characterization parameter
7.4
6.8
6.2
Junction-to-case (bottom) thermal resistance
2.1
1.9
1.9
NAME
DESCRIPTION
ΘJA
ΘJCbot
(1)
14
°C/W = degrees Celsius per watt.
Specifications
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5.5
SWRS176 – FEBRUARY 2015
Electrical Characteristics
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V with internal DC-DC
converter, unless otherwise noted.
PARAMETER
Icore
Core current consumption
TEST CONDITIONS
MIN
100
Shutdown. No clocks running, no retention
150
Standby. With RTC, CPU, RAM and (partial) register
retention. RCOSC_LF
1
Standby. With RTC, CPU, RAM and (partial) register
retention. XOSC_LF
1.2
Standby. With Cache, RTC, CPU, RAM and (partial)
register retention. RCOSC_LF
2.5
Standby. With Cache, RTC, CPU, RAM and (partial)
register retention. XOSC_LF
2.7
Idle. Supply Systems and RAM powered.
Radio RX
Radio RX
(1)
nA
µA
5.9
6.1
Radio TX, 0 dBm output power (1)
6.1
Radio TX, 5 dBm output power (2)
mA
9.1
(3)
Peripheral power domain
Delta current with domain enabled
20
µA
Serial power domain
Delta current with domain enabled
13
µA
RF Core
Delta current with power domain enabled, clock
enabled, RF Core Idle
237
µA
µDMA
Delta current with clock enabled, module idle
130
µA
Timers
Delta current with clock enabled, module idle
113
µA
I C
Delta current with clock enabled, module idle
12
µA
I2S
Delta current with clock enabled, module idle
36
µA
SSI
Delta current with clock enabled, module idle
93
µA
UART
Delta current with clock enabled, module idle
164
µA
2
(1)
(2)
(3)
UNIT
550
(2)
Peripheral Current Consumption (Adds to core current Icore for each peripheral unit activated)
MAX
1.45 mA
+
31
µA/MHz
Active. Core running CoreMark
Iperi
TYP
Reset. RESET_N pin asserted
Single-ended RF mode optimized for size and power consumption. Measured on CC2650EM-4XS
Differential RF mode optimized for RF performance. Measured on CC2650EM-5XD
Iperi not supported in Standby and Shutdown
Specifications
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5.6
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General Characteristics
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Wake-up and Timing
Idle -> Active
Standby -> Active
Shutdown -> Active
14
µs
151
µs
1015
µs
Flash Memory
Supported flash erase cycles before
failure
Flash page/sector erase current
100
Average delta current
k Cycles
12.6
mA
Flash page/sector erase time (1)
8
ms
Flash page/sector size
4
KB
8.15
mA
8
µs
Flash write current
Average delta current, 4 bytes at a time
Flash write time (1)
4 bytes at a time
(1)
5.7
This number is dependent on Flash aging and will increase over time and erase cycles
1-Mbps GFSK (Bluetooth Low Energy) – RX
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless
otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Receiver sensitivity
Differential mode. Measured at the CC2650EM-5XD SMA
connector, BER = 10-3
–97
dBm
Receiver sensitivity
Single-ended mode. Measured on CC2650EM-4XS, at the SMA
connector, BER = 10-3
–96
dBm
Receiver saturation
Differential mode. Measured at the CC2650EM-5XD SMA
connector, BER = 10-3
4
dBm
Receiver saturation
Single-ended mode. Measured on CC2650EM-4XS, at the SMA
connector, BER = 10-3
0
dBm
Co-channel rejection (1)
Wanted signal at -67 dBm, modulated interferer in channel,
BER = 10-3
-6
dB
Selectivity, ±1 MHz (1)
Wanted signal at -67 dBm, modulated interferer at ±1 MHz,
BER = 10-3
7 / 3 (2)
dB
Selectivity, ±2 MHz (1)
Wanted signal at -67 dBm, modulated interferer at ±2 MHz,
BER = 10-3
34 / 25 (2)
dB
Selectivity, ±3 MHz (1)
Wanted signal at -67 dBm, modulated interferer at ±3 MHz,
BER = 10-3
38 / 26 (2)
dB
Selectivity, ±4 MHz (1)
Wanted signal at -67 dBm, modulated interferer at ±4 MHz,
BER = 10-3
42 / 29 (2)
dB
Selectivity, ±5 MHz or more (1)
Wanted signal at -67 dBm, modulated interferer at ≥ ±5 MHz,
BER = 10-3
32
dB
Selectivity, Image frequency (1)
Wanted signal at -67 dBm, modulated interferer at image
frequency, BER = 10-3
25
dB
Selectivity, Image frequency ±1
MHz (1)
Wanted signal at -67 dBm, modulated interferer at ±1 MHz from
image frequency, BER = 10-3
3 / 26 (2)
dB
Out-of-band blocking (3)
30 MHz to 2000 MHz
–20
dBm
Out-of-band blocking
2003 MHz to 2399 MHz
–5
dBm
Out-of-band blocking
2484 MHz to 2997 MHz
–8
dBm
Out-of-band blocking
3000 MHz to 12.75 GHz
–8
dBm
Intermodulation
Wanted signal at 2402 MHz, -64 dBm. Two interferers at 2405
and 2408 MHz respectively, at the given power level
-34
dBm
(1)
(2)
(3)
16
Numbers given as I/C dB
X / Y, where X is +N MHz and Y is -N MHz
Excluding one exception at Fwanted / 2, per Bluetooth Specification
Specifications
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1-Mbps GFSK (Bluetooth Low Energy) – RX (continued)
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless
otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Conducted measurement in a 50 Ω single-ended load. Suitable
Spurious emissions, 30 to 1000
for systems targeting compliance with EN 300 328, EN 300 440
MHz
class 2, FCC CFR47, Part 15 and ARIB STD-T-66
–71
dBm
Conducted measurement in a 50 Ω single-ended load. Suitable
for systems targeting compliance with EN 300 328, EN 300 440
class 2, FCC CFR47, Part 15 and ARIB STD-T-66
–62
dBm
RSSI dynamic range
70
dB
RSSI accuracy
±4
dB
Spurious emissions, 1 to 12.75
GHz
5.8
1-Mbps GFSK (Bluetooth Low Energy) – TX
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless
otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output power, highest setting
Differential mode, delivered to a single-ended 50-Ω load
through a balun
+5
dBm
Output power, highest setting
Measured on CC2650EM-4XS, delivered to a single-ended
50-Ω load
+2
dBm
Output power, lowest setting
Delivered to a single-ended 50-Ω load through a balun
–21
dBm
f < 1 GHz, outside restricted bands
–43
dBm
f < 1 GHz, restricted bands ETSI
–65
dBm
f < 1 GHz, restricted bands FCC
–76
dBm
f > 1 GHz, including harmonics
–46
dBm
Spurious emission conducted
measurement
Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328
and EN 300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan)
5.9
1-Mbps GFSK (Bluetooth Low Energy) – Common RX/TX
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
Frequency error tolerance
TEST CONDITIONS
Difference between center frequency of the
received RF signal and local oscillator frequency.
Data rate error tolerance
MIN
TYP
MAX
UNIT
-350
+350
kHz
-750
+750
ppm
Specifications
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5.10 24-MHz Crystal Oscillator (XOSC_HF) (1)
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
Crystal frequency
-40
ESR Equivalent series resistance
5
Start-up time (3)
UNIT
MHz
40
20
CL Crystal load capacitance
(3)
MAX
24
Crystal frequency tolerance (2)
(1)
(2)
TYP
ppm
60
Ω
9
pF
150
µs
Probing or otherwise stopping the XTAL while the DC-DC converter is enabled may cause permanent damage to the device.
Includes initial tolerance of the crystal, drift over temperature, aging and frequency pulling due to incorrect load capacitance. As per
Bluetooth specification
Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection
5.11 32.768-kHz Crystal Oscillator (XOSC_LF)
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
Crystal frequency
TYP
MAX
UNIT
250
ppm
100
kΩ
12
pF
32.768
Crystal frequency tolerance, Bluetooth low
energy applications
-250
ESR Equivalent series resistance
30
CL Crystal load capacitance
6
kHz
5.12 48-MHz RC Oscillator (RCOSC_HF)
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
Frequency
TYP
Uncalibrated frequency accuracy
±1%
Calibrated frequency accuracy (1)
±0.25%
Start-up time
(1)
MAX
48
UNIT
MHz
5
µs
Accuracy relatively to the calibration source (XOSC_HF).
5.13 32-kHz RC Oscillator (RCOSC_LF)
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
Calibrated frequency
TYP
32.8
Temperature coefficient
18
MIN
50
Specifications
MAX
UNIT
kHz
ppm/°C
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5.14
SWRS176 – FEBRUARY 2015
ADC Characteristics (1)
Tc=25°C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
Input voltage range
TYP
0
Internal 4.3 V equivalent reference
(2)
Integral nonlinearity
(2)
Internal 4.3 V equivalent reference , 200 ksps, 9.6 kHz input tone
ENOB Effective number of bits
THD
Total harmonic distortion
SINA
Signal-to-noise and
D/
distortion ratio
SNDR
SFDR
Spurious-free dynamic
range
Conversion time
(1)
(2)
(3)
(4)
Bits
200
Internal 4.3 V equivalent reference (2)
DNL (3) Differential nonlinearity
INL (4)
V
12
Sample rate
Gain error
UNIT
VDDS
Resolution
Offset
MAX
ksps
2
LSB
2.4
LSB
>–1
LSB
±3
LSB
9.8
VDDS as reference, 200 ksps, 9.6 kHz input tone
10
Internal 1.44 V reference, voltage scaling disabled, 32 samples
average, 200 ksps, 300 Hz input tone
11.1
Internal 4.3 V equivalent reference (2), 200 ksps, 9.6 kHz input tone
–65
VDDS as reference, 200 ksps, 9.6 kHz input tone
–69
Internal 1.44 V reference, voltage scaling disabled, 32 samples
average, 200 ksps, 300 Hz input tone
–71
Internal 4.3 V equivalent reference (2), 200 ksps, 9.6 kHz input tone
60
VDDS as reference, 200 ksps, 9.6 kHz input tone
63
Internal 1.44 V reference, voltage scaling disabled, 32 samples
average, 200 ksps, 300 Hz input tone
69
Internal 4.3 V equivalent reference (2), 200 ksps, 9.6 kHz input tone
67
VDDS as reference, 200 ksps, 9.6 kHz input tone
72
Internal 1.44 V reference, voltage scaling disabled, 32 samples
average, 200 ksps, 300 Hz input tone
73
Serial conversion, time-to-output, 24 MHz clock
50
Bits
dB
dB
dB
clockcycles
Current consumption
Internal 4.3 V equivalent reference (2)
0.66
mA
Current consumption
VDDS as reference
0.75
mA
Internal reference voltage
Internal 4.3 V equivalent reference (2)
1.44
V
Internal reference voltage
VDDS as reference
VDDS /
2.82
V
Using IEEE Std 1241™-2010 for terminology and test methods.
Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3V
No missing codes. Positive DNL typically varies from +0.3 to +3.5 depending on device, see Figure 5-13
For a typical example, see Figure 5-14
5.15
Temperature Sensor
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
Resolution
TYP
MAX
4
Range
–40
UNIT
°C
85
°C
Accuracy
±5
°C
Supply voltage coefficient (1)
3.2
°C/V
(1)
Automatically compensated when using supplied driver libraries.
5.16
Battery Monitor
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
Resolution
TYP
MAX
50
Range
1.8
UNIT
mV
3.8
Specifications
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Battery Monitor (continued)
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
Accuracy
5.17
TYP
MAX
13
UNIT
mV
Continuous Time Comparator
Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
MAX
UNIT
Input voltage range
PARAMETER
TEST CONDITIONS
0
VDDS
V
External reference voltage
0
VDDS
V
Internal reference voltage
MIN
DCOUPL as reference
1.27
Offset
Hysteresis
Decision time
Step from -10mV to +10mV
Current consumption when enabled
(1)
TYP
(1)
V
3
mV
<2
mV
0.72
µs
8.6
µA
Additionally the bias module needs to be enabled when running in standby mode.
5.18
Low-Power Clocked Comparator
Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
Input voltage range
MIN
TYP
0
Clock frequency
MAX
UNIT
VDDS
V
32
kHz
Internal reference voltage, VDDS / 2
1.49 - 1.51
V
Internal reference voltage, VDDS / 3
1.01 - 1.03
V
Internal reference voltage, VDDS / 4
0.78 - 0.79
V
Internal reference voltage, DCOUPL / 1
1.25 - 1.28
V
Internal reference voltage, DCOUPL / 2
0.63 - 0.65
V
Internal reference voltage, DCOUPL / 3
0.42 - 0.44
V
Internal reference voltage, DCOUPL / 4
0.33 - 0.34
V
Offset
<2
mV
Hysteresis
<5
mV
<1
clock-cycle
362
nA
Decision time
Step from -50mV to +50mV
Current consumption when enabled
5.19 Programmable Current Source
Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
Current source programmable output range
Resolution
Current consumption (1)
(1)
20
Including current source at maximum
programmable output
MIN
TYP
MAX
UNIT
0.25 20
µA
0.25
µA
23
µA
Additionally the bias module needs to be enabled when running in standby mode.
Specifications
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5.20 DC Characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
TA = 25°C, VDDS = 1.8 V
GPIO VOH at 8mA load
IOCURR=2, high drive GPIOs only
1.54
V
GPIO VOL at 8mA load
IOCURR=2, high drive GPIOs only
0.26
V
GPIO VOH at 4mA load
IOCURR=1
1.58
V
GPIO VOL at 4mA load
IOCURR=1
0.21
V
GPIO pullup current
Input mode, pullup enabled, Vpad=0V
71.7
µA
GPIO pulldown current
Input mode, pulldown enabled, Vpad=VDDS
21.1
µA
GPIO high/low input transition, no hysteresis
IH=0, transition between reading 0 and reading 1
0.88
V
GPIO low-to-high input transition, with hysteresis
IH=1, transition voltage for input read as 0→1
1.07
V
GPIO high-to-low input transition, with hysteresis
IH=1, transition voltage for input read as 1→0
0.74
V
GPIO input hysteresis
IH=1, difference between 0→1 and 1→0 points
0.33
V
GPIO VOH at 8mA load
IOCURR=2, high drive GPIOs only
2.68
V
GPIO VOL at 8mA load
IOCURR=2, high drive GPIOs only
0.33
V
GPIO VOH at 4mA load
IOCURR=1
2.72
V
GPIO VOL at 4mA load
IOCURR=1
0.28
V
TA = 25°C, VDDS = 3.0 V
TA = 25°C, VDDS = 3.8 V
GPIO pullup current
Input mode, pullup enabled, Vpad=0V
277
µA
GPIO pulldown current
Input mode, pulldown enabled, Vpad=VDDS
113
µA
GPIO high/low input transition, no hysteresis
IH=0, transition between reading 0 and reading 1
1.67
V
GPIO low-to-high input transition, with hysteresis
IH=1, transition voltage for input read as 0→1
1.94
V
GPIO high-to-low input transition, with hysteresis
IH=1, transition voltage for input read as 1→0
1.54
V
GPIO input hysteresis
IH=1, difference between 0→1 and 1→0 points
0.4
V
5.21 Control Input AC Characteristics
TA = -40°C to 85°C, VDDS = 1.7 V to 3.8 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
RESET_N low duration
TYP
MAX
UNIT
μs
1
5.22 Synchronous Serial Interface (SSI) Characteristics
Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
NO.
S1
PARAMETER
tclk_per
PARAMETER NAME
MIN
SSIClk cycle time
12
TYP
MAX
UNIT
65024
system clocks
Specifications
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5.23 Typical Characteristics
6
-94
5
Output Power (dBm)
Sensitivity (dBm)
-95
-96
-97
4
4XS 2-dBm Setting
5XD 5-dBm Setting
3
2
1
-98
Sensitivity 4XS
Sensitivity 5XD
-99
-40 -30 -20 -10
0
10 20 30 40
Temperature (qC)
50
60
70
0
-40 -30 -20 -10
0
80
10 20 30 40
Temperature (qC)
50
60
70
80
Figure 5-2. Output Power vs Temperature
Figure 5-1. BLE Sensitivity vs Temperature
7
16
4XS 2-dBm Setting
5XD 5-dBm Setting
15
14
6.8
RX Current (mA)
TX Current (mA)
13
12
11
10
9
6.6
6.4
6.2
6
8
7
5.8
6
5
4
1.8
5.6
-40 -30 -20 -10
2
2.2
2.4
2.6 2.8
3
VDDS (V)
3.2
3.4
3.6
3.8
0
10 20 30 40
Temperature (qC)
50
60
70
80
D001
D015
Figure 5-3. Transmit Current Consumption vs. Supply Voltage
(VDDS)
Figure 5-4. RX Mode Current Consumption vs Temperature
12
6
10
5
Output power (dBm)
TX Current (mA)
5XD RX Current
4XS RX Current
8
6
4
4
3
2
2
5XD 5dBm Setting
4XS 2dBm Setting
0
-40 -30 -20 -10
0
10 20 30 40
Temperature (qC)
50
60
70
1
5XD 5dBm Setting
4XS 2dBm Setting
80
D002
Figure 5-5. TX Mode Current Consumption vs Temperature
22
0
1.8
2.3
2.8
VDDS (V)
3.3
3.8
D003
Figure 5-6. TX Output Power vs Supply Voltage (VDDS)
Specifications
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3.1
Active Mode Current Consumpstion (mA)
-95
Sensitivity (dBm)
-96
-97
-98
-99
-100
BLE 5XD Sensitivity
BLE 4XS Sensitivity
-101
1.8
2.3
2.8
VDDS (V)
3.3
Active Mode Current
3.05
3
2.95
2.9
2.85
-40 -30 -20 -10
3.8
50
60
70
80
D006
Figure 5-8. Active Mode Current Consumption vs Temperature
4
5
Standby Mode Current
Active Mode Current
3.5
4.5
3
4
Current (uA)
Current Consumption (mA)
10 20 30 40
Temperature (qC)
D004
Figure 5-7. BLE Sensitivity vs Supply Voltage (VDDS)
3.5
3
2.5
2
1.5
1
2.5
2
1.8
0.5
2.3
2.8
VDDS (V)
3.3
0
-20
3.8
0
10
20 30 40 50
Temperature (qC)
60
70
80
D008
Figure 5-10. Standby Mode Current Consumption With RCOSC
RTC vs Temperature
1006.4
11.4
11.2
-10
D007
Figure 5-9. Active Mode Current Consumption vs Supply
Voltage (VDDS)
Fs= 200 kHz, No Averaging
Fs= 200 kHz, 32 samples averaging
1006.2
11
1006
10.8
ADC Code
Effective Number of Bits
0
10.6
10.4
10.2
1005.8
1005.6
1005.4
10
1005.2
9.8
1005
9.6
9.4
200 300 500
1000 2000
5000 10000 20000
Input Frequency (Hz)
100000
1004.8
1.8
D009
Figure 5-11. Effective number of bits vs Input frequency
(Internal Reference, No Scaling)
2.3
2.8
VDDS (V)
3.3
3.8
D012
Figure 5-12. SoC ADC Output vs Supply Voltage (Fixed Input,
Internal Reference, No Scaling)
Specifications
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3.5
3
2.5
2
DNL
1.5
1
0.5
0
-0.5
-1
ADC Code
4200
4000
3800
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
0
200
-1.5
D010
Figure 5-13. DNL vs. ADC Code (Internal Reference, No Scaling)
3
2
1
INL
0
-1
-2
-3
-4
0
200
400
600
800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200
ADC Code
D011
Figure 5-14. INL vs. ADC Code (Internal Reference, No Scaling)
1007.5
11.4
Fs= 200 kHz, No Averaging
Fs= 200 kHz, 32 samples averaging
11.2
Effective Number of Bits
1007
ADC Code
1006.5
1006
1005.5
11
10.8
10.6
10.4
10.2
10
9.8
1005
9.6
1004.5
-40 -30 -20 -10
0
10 20 30 40
Temperature (qC)
50
60
70
9.4
200 300 500
80
D013
Figure 5-15. SoC ADC Output vs Temperature (Fixed Input,
Internal Reference, No Scaling)
24
1000 2000
5000 10000 20000
Input Frequency (Hz)
100000
D009
Figure 5-16. ENOB vs Sampling Frequency
(Input frequency = Fs/10)
Specifications
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6 Detailed Description
6.1
Overview
Section 1.4 shows a block diagram of the core modules of the CC26xx product family.
6.2
Main CPU
The SimpleLink CC2640 Wireless MCU contains an ARM Cortex-M3 (CM3) 32-bit CPU, which runs the
application and the higher layers of the protocol stack.
The CM3 processor provides a high-performance, low-cost platform that meets the system requirements
of minimal memory implementation, and low-power consumption, while delivering outstanding
computational performance and exceptional system response to interrupts.
CM3 features include:
• 32-bit ARM Cortex-M3 architecture optimized for small-footprint embedded applications
• Outstanding processing performance combined with fast interrupt handling
• ARM Thumb®-2 mixed 16- and 32 bit instruction set delivers the high performance expected of a 32 bit
ARM core in a compact memory size usually associated with 8- and 16-bit devices, typically in the
range of a few kilobytes of memory for microcontroller-class applications:
– Single-cycle multiply instruction and hardware divide
– Atomic bit manipulation (bit-banding), delivering maximum memory use and streamlined peripheral
control
– Unaligned data access, enabling data to be efficiently packed into memory
• Fast code execution permits slower processor clock or increases sleep mode time
• Harvard architecture characterized by separate buses for instruction and data
• Efficient processor core, system, and memories
• Hardware division and fast digital-signal-processing oriented multiply accumulate
• Saturating arithmetic for signal processing
• Deterministic, high-performance interrupt handling for time-critical applications
• Enhanced system debug with extensive breakpoint and trace capabilities
• Serial wire trace reduces the number of pins required for debugging and tracing
• Migration from the ARM7™ processor family for better performance and power efficiency
• Optimized for single-cycle flash memory use
• Ultra-low power consumption with integrated sleep modes
• 1.25 DMIPS per MHz
6.3
RF Core
The RF Core contains an ARM Cortex M0 that interfaces the analog RF and base-band circuitries,
handles data to and from the system side, and assembles the information bits in a given packet structure.
The RF core offers a high level, command-based API to the main CPU.
The RF core is capable of autonomously handling the time-critical aspects of the radio protocols
(Bluetooth Low Energy) thus offloading the main CPU and leaving more resources for the user application.
The RF core has a dedicated 4-KB SRAM block and runs initially from separate ROM memory. The ARM
Cortex M0 is not programmable by customers.
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Sensor Controller
The Sensor Controller contains circuitry that can be selectively enabled in standby mode. The peripherals
in this domain may be controlled by the Sensor Controller Engine which is a proprietary power-optimized
CPU. This CPU can read and monitor sensors or perform other tasks autonomously, thereby significantly
reducing power consumption and offloading the main CM3 CPU.
The Sensor Controller is set up using a PC-based configuration tool, called Sensor Controller Studio, and
typical use cases may be (but are not limited to):
• Analog sensors using integrated ADC
• Digital sensors using GPIOs and bit-banged I2C and/or SPI
• UART communication for sensor reading or debugging
• Capacitive sensing
• Waveform generation
• Pulse counting
• Keyboard scan
• Quadrature decoder for polling rotation sensors
• Oscillator calibration
The peripherals in the Sensor Controller include the following:
• The low-power clocked comparator can be used to wake the device from any state in which the
comparator is active. A configurable internal reference can be used in conjunction with the comparator.
The output of the comparator can also be used to trigger an interrupt or the ADC.
• Capacitive sensing functionality is implemented through the use of a constant current source, a timeto-digital converter, and a comparator. The continuous time comparator in this block can also be used
as a higher-accuracy alternative to the low-power clocked comparator. The Sensor Controller will take
care of baseline tracking, hysteresis, filtering and other related functions.
• The ADC is a 12-bit, 200 ksamples/s ADC with 8 inputs and a built-in voltage reference. The ADC can
be triggered by many different sources, including timers, I/O pins, software, the analog comparator,
and the RTC.
• The Sensor Controller also includes a SPI/I2C digital interface.
• The analog modules can be connected to up to 8 different GPIOs.
The peripherals in the Sensor Controller can also be controlled from the main application processor.
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Table 6-1. GPIOs Connected to the Sensor Controller (1)
(1)
6.5
Analog capable
7x7 RGZ DIO#
5x5 RHB DIO#
Y
30
14
4x4 RSM DIO#
Y
29
13
Y
28
12
Y
27
11
9
Y
26
9
8
Y
25
10
7
Y
24
8
6
Y
23
7
5
N
7
4
2
N
6
3
1
N
5
2
0
N
4
1
N
3
0
N
2
N
1
N
0
Depending on the package size, up to 16 pins can be connected to the Sensor Controller. Up to 8 of
them can be connected to analog modules
Memory
The flash memory provides nonvolatile storage for code and data. The flash memory is in-system
programmable.
The SRAM (static RAM) can be used for both storage of data and execution of code and is split into two
4-KB blocks and two 6-KB blocks. Retention of the RAM contents in standby mode can be enabled or
disabled individually for each block to minimize power consumption. In addition, if flash cache is disabled,
the 8-KB cache can be used as a general-purpose RAM.
The ROM provides preprogrammed embedded TI RTOS kernel, Driverlib and lower layer protocol stack
software (Bluetooth Low Energy Controller). It also contains a bootloader that can be used to reprogram
the device using SPI or UART.
6.6
Debug
The on-chip debug support is done through a dedicated cJTAG (IEEE 1149.7) or JTAG (IEEE 1149.1)
interface.
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Power Management
To minimize power consumption, the CC2640 supports a number of power modes and power
management features (see Table 6-2).
Table 6-2. Power Modes
Software Configurable Power Modes
Mode
Reset Pin Held
Active
Idle
Standby
Shutdown
CPU
Active
Off
Off
Off
Off
Flash
On
Available
Off
Off
Off
SRAM
On
On
On
Off
Off
Radio
Available
Available
Off
Off
Off
Supply System
Current
Wake-up Time to CPU Active (1)
Register Retention
SRAM Retention
On
On
Duty Cycled
Off
Off
1.45 mA + 31 µA/MHz
550 µA
1 µA
0.15 µA
0.1 µA
–
14 µs
151 µs
1015 µs
1015 µs
Full
Full
Partial
No
No
Full
Full
Full
No
No
High-Speed Clock
XOSC_HF or
RCOSC_HF
XOSC_HF or
RCOSC_HF
Off
Off
Off
Low-Speed Clock
XOSC_LF or
RCOSC_LF
XOSC_LF or
RCOSC_LF
XOSC_LF or
RCOSC_LF
Off
Off
Peripherals
Available
Available
Off
Off
Off
Sensor Controller
Available
Available
Available
Off
Off
Wake-up on RTC
Available
Available
Available
Off
Off
Wake-up on Pin Edge
Available
Available
Available
Available
Off
Wake-up on Reset Pin
Available
Available
Available
Available
Available
(1)
Not including RTOS overhead
In Active mode, the application CM3 CPU is actively executing code. Active mode provides normal
operation of the processor and all of the peripherals that are currently enabled. The system clock can be
any available clock source (see Table 6-2).
In Idle mode, all active peripherals can be clocked, but the Application CPU core and memory are not
clocked and no code is executed. Any interrupt event will bring the processor back into Active mode.
In Standby, only the AON (Always-on) domain is active. An external wake event, RTC event, or Sensor
Controller event is required to bring the device back to Active. MCU peripherals with retention do not need
to be reconfigured when waking up again and the CPU will continue execution from where it went into
Standby. All GPIOs are latched in Standby.
In Shutdown, the device is entirely turned off, including the AON domain and Sensor Controller, I/Os are
latched with the value they had before entering Shutdown. A change of state on any I/O pin defined as a
"wake from Shutdown pin" will wake up the device and function as a reset trigger. The CPU can
differentiate between reset in this way and reset-by-reset pin or power-on-reset by reading the reset status
register. The only state retained in this mode is the latched I/O state and the Flash memory contents.
The Sensor Controller is an autonomous processor that can control the peripherals in the Sensor
Controller independently of the main CPU. This means that the main CPU does not have to wake up to for
example execute an ADC sample or poll a digital sensor over SPI, and saves both current and wake-up
time that would otherwise be wasted. The Sensor Controller Studio enables the user to configure the
Sensor Controller and choose which peripherals are controlled and which conditions will wake up the main
CPU.
28
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Clock Systems
The CC2640 supports two external and two internal clock sources.
A 24 MHz crystal is required as the frequency reference for the radio. This signal is doubled internally to
create a 48 MHz clock.
The 32 kHz crystal is optional. Bluetooth low energy requires a slow-speed clock with better than ±500
ppm accuracy if the device is to enter any sleep mode while maintaining a connection. The internal 32 kHz
RC oscillator can in some use cases be compensated to meet the requirements. The low-speed crystal
oscillator is designed for use with a 32 kHz watch-type crystal.
The internal high-speed oscillator (48 MHz) can be used as a clock source for the CPU subsystem.
The internal low-speed oscillator (32.768 kHz) can be used as a reference if the low-power crystal
oscillator is not used.
The 32 kHz clock source can be used as external clocking reference through GPIO.
6.9
General Peripherals and Modules
The I/O controller controls the digital I/O pins and contains multiplexer circuitry to allow a set of peripherals
to be assigned to I/O pins in a flexible manner. All digital I/Os are interrupt and wake-up capable, have a
programmable pullup and pulldown function and can generate an interrupt on a negative or positive edge
(configurable). When configured as an output, pins can function as either push-pull or open-drain. Five
GPIOs have high drive capabilities (marked in bold in Section 4).
The SSIs are synchronous serial interfaces that are compatible with SPI, MICROWIRE, and Texas
Instruments synchronous serial interfaces. The SSIs support both SPI master and slave up to 4 MHz.
The UART implements a universal asynchronous receiver/transmitter function. It supports flexible baudrate generation up to a maximum of 3 Mbps and is compatible with the Bluetooth HCI specifications.
Timer 0 is a general-purpose timer module (GPTM), which provides two 16-bit timers. The GPTM can be
configured to operate as a single 32-bit timer, dual 16-bit timers or as a PWM module.
Timer 1, Timer 2, and Timer 3 are also GPTMs. Each of these timers is functionally equivalent to Timer 0.
In addition to these four timers, the RF core has its own timer to handle timing for RF protocols; the RF
timer can be synchronized to the RTC.
The I2C interface is used to communicate with devices compatible with the I2C standard. The I2C interface
is capable of 100 kHz and 400 kHz operation, and can serve as both I2C master and I2C slave.
The TRNG module provides a true, nondeterministic noise source for the purpose of generating keys,
initialization vectors (IVs), and other random number requirements. The TRNG is built on 24 ring
oscillators that create unpredictable output to feed a complex nonlinear combinatorial circuit.
The watchdog timer is used to regain control if the system fails due to a software error after an external
device fails to respond as expected. The watchdog timer can generate an interrupt or a reset when a
predefined time-out value is reached.
The device includes a direct memory access (µDMA) controller. The µDMA controller provides a way to
offload data transfer tasks from the CM3 CPU, allowing for more efficient use of the processor and the
available bus bandwidth. The µDMA controller can perform transfer between memory and peripherals. The
µDMA controller has dedicated channels for each supported on-chip module and can be programmed to
automatically perform transfers between peripherals and memory as the peripheral is ready to transfer
more data. Some features of the µDMA controller include the following (this is not an exhaustive list):
• Highly flexible and configurable channel operation of up to 32 channels
• Transfer modes: Memory-to-memory, memory-to-peripheral, peripheral-to-memory, and peripheral-toperipheral
• Data sizes of 8, 16, and 32 bits
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The AON domain contains circuitry that is always enabled, except for in Shutdown (where the digital
supply is off). This circuitry includes the following:
• The RTC can be used to wake the device from any state where it is active. The RTC contains three
compare and one capture registers. With software support, the RTC can be used for clock and
calendar operation. The RTC is clocked from the 32 kHz RC oscillator or crystal. The RTC can also be
compensated to tick at the correct frequency even when the internal 32 kHz RC oscillator is used
instead of a crystal.
• The battery monitor and temperature sensor are accessible by software and give a battery status
indication as well as a coarse temperature measure.
6.10 System Architecture
Depending on the product configuration, CC26xx can function either as a Wireless Network Processor
(WNP – an IC running the wireless protocol stack, with the application running on a separate MCU), or as
a System-on-Chip (SoC), with the application and protocol stack running on the ARM CM3 core inside the
device.
In the first case, the external host MCU communicates with the device using SPI or UART. In the second
case, the application must be written according to the application framework supplied with the wireless
protocol stack.
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7 Application Circuit
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI's customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
Few external components are required for the operation of the CC2640 device. Figure 7-1 shows a typical
application circuit. For a complete reference design, see the product folder on www.ti.com.
Red = Not necessary if internal bias is used
6.8 pF
Antenna
(50 Ohm)
Pin 3 (RXTX)
2.4 nH
1 pF
Pin 2 (RF N)
To VDDR pins
10uF
Optional
inductor.
Only
needed for
10uH
DCDC
operation
2 nH
6.2-6.8 nH
Pin 1 (RF P)
2.4-2.7 nH
Differential
operation
2 nH
12 pF
1 pF
1 pF
Antenna
(50 Ohm)
Red = Not necessary if internal bias is used
CC26xx
DCDC_SW
VDDS_DCDC
(GND exposed die
attached pad )
Pin 2 (RF N)
Pin 3/4 (RXTX)
Pin 1 (RF P)
input decoupling
10uF ± 22uF
15 nH
Pin 1 (RF P)
2 nH
Pin 2 (RF N)
Single ended
operation
12 pF
1.2 pF
1.2 pF
Antenna
(50 Ohm)
Red = Not necessary if internal bias is used
Pin 3 (RXTX)
15 nH
24MHz
XTAL
(Load caps
on chip)
2 nH
Pin 2 (RF N)
12 pF
1.2 pF
Single ended
operation with 2
antennas
1.2 pF
Antenna
(50 Ohm)
15 nH
Pin 1 (RF P)
2 nH
12 pF
1.2 pF
1.2 pF
Figure 7-1. CC2640 Application Circuit
Application Circuit
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Internal DCDC regulator
10uF
Internal LDO regulator
To all VDDR Pins
To all VDDR Pins
10uF
External regulator
Ext
regulator
1.7V ± 1.95V to all VDDR- and VDDS Pins except VDDS_DCDC
2.2uF
10uH
CC26xx
DCDC_SW Pin
VDDS_DCDC Pin
(GND exposed die
attached pad )
CC26xx
Pin 3/4 (RXTX)
Pin 2 (RF N)
DCDC_SW Pin
VDDS_DCDC Pin
NC
(GND exposed die
attached pad )
Pin 1 (RF P)
VDDS_DCDC
input decoupling
10uF ± 22uF
1.8V ± 3.8V
to all VDDS Pins
CC26xx
DCDC_SW Pin
Pin 3/4 (RXTX)
Pin 2 (RF N)
VDDS_DCDC Pin
(GND exposed die
attached pad )
Pin 1 (RF P)
Pin 3/4 (RXTX)
Pin 2 (RF N)
Pin 1 (RF P)
VDDS_DCDC
input decoupling
10uF ± 22uF
24MHz
XTAL
(Load caps
on chip)
1.8V ± 3.8V
Supply voltage
24MHz
XTAL
(Load caps
on chip)
24MHz
XTAL
(Load caps
on chip)
To all VDDS Pins
Figure 7-2. Supply Voltage Configurations
Power supply decoupling capacitors are not shown. Digital I/Os not included. Pin positions, and
component values are not final. For detailed overview of power supply decoupling and wiring, see the TI
reference designs and the CC26xx technical reference manual (Section 8.2).
Figure 7-1 shows that the RF front end can be used both differentially and single-endedly with the option
of having internal or external biasing. These options allow for various trade-offs between cost, boardspace, and RF performance. Differential operation with external bias gives the best performance while
single-ended operation with internal bias gives the least amount of external components and the lowest
power consumption.
32
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8 Device and Documentation Support
8.1
8.1.1
Device Support
Development Support
TI offers an extensive line of development tools, including tools to evaluate the performance of the
processors, generate code, develop algorithm implementations, and fully integrate and debug software
and hardware modules.
The following products support development of the CC2640 device applications:
Software Tools:
SmartRF™ Studio 7:
SmartRF Studio is a PC application that helps designers of radio systems to easily evaluate the RF-IC at
an early stage in the design process.
• Test functions for sending and receiving radio packets, continuous wave transmit and receive
• Evaluate RF performance on custom boards by wiring it to a supported evaluation board or debugger
• Can also be used without any hardware, but then only to generate, edit and export radio configuration
settings
• Can be used in combination with several development kits for Texas Instruments’ CCxxxx RF-ICs
Sensor Controller Studio:
Sensor Controller Studio provides a development environment for the CC26xx Sensor Controller. The
Sensor Controller is a proprietary, power-optimized CPU in the CC26xx, which can perform simple
background tasks autonomously and independent of the System CPU state.
• Allows for Sensor Controller task algorithms to be implemented using a C-like programming language
• Outputs a Sensor Controller Interface driver, which incorporates the generated Sensor Controller
machine code and associated definitions
• Allows for rapid development by using the integrated Sensor Controller task testing and debugging
functionality. This allows for live visualization of sensor data and algorithm verification.
IDEs and Compilers:
Code Composer Studio:
• Integrated development environment with project management tools and editor
• Code Composer Studio (CCS) 6.1 and later has built-in support for the CC26xx device family
• Best support for XDS debuggers; XDS100v3, XDS110 and XDS200
• High integration with TI-RTOS with support for TI-RTOS Object View
IAR Embedded Workbench for ARM
• Integrated development environment with project management tools and editor
• IAR EWARM 7.30.3 and later has built-in support for the CC26xx device family
• Broad debugger support, supporting XDS100v3, XDS200, IAR I-Jet and Segger J-Link
• Integrated development environment with project management tools and editor
• RTOS plugin available for TI-RTOS
For a complete listing of development-support tools for the CC2640 platform, visit the Texas Instruments
website at www.ti.com. For information on pricing and availability, contact the nearest TI field sales office
or authorized distributor.
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8.1.2
www.ti.com
Device Nomenclature
To designate the stages in the product development cycle, TI assigns prefixes to all part numbers and/or
date-code. Each device has one of three prefixes/identifications: X, P, or null (no prefix) (for example,
CC2640 is in production; therefore, no prefix/identification is assigned).
Device development evolutionary flow:
X
Experimental device that is not necessarily representative of the final device's electrical
specifications and may not use production assembly flow.
P
Prototype device that is not necessarily the final silicon die and may not necessarily meet
final electrical specifications.
null
Production version of the silicon die that is fully qualified.
Production devices have been characterized fully, and the quality and reliability of the device have been
demonstrated fully. TI's standard warranty applies.
Predictions show that prototype devices (X or P) have a greater failure rate than the standard production
devices. Texas Instruments recommends that these devices not be used in any production system
because their expected end-use failure rate still is undefined. Only qualified production devices are to be
used.
TI device nomenclature also includes a suffix with the device family name. This suffix indicates the
package type (for example, RSM).
For orderable part numbers of CC2640 devices in the RSM, RHB or RGZ package types, see the
Package Option Addendum of this document, the TI website (www.ti.com), or contact your TI sales
representative.
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CC2640
www.ti.com
8.2
SWRS176 – FEBRUARY 2015
Documentation Support
The following documents describe the CC2640. Copies of these documents are available on the Internet
at www.ti.com.
SWCU117
Technical Reference Manual. Texas Instruments CC26xx Family of Products
SWRS058
Silicon Errata. Texas Instruments CC26xx™ Family of Products
8.2.1
Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the
respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views;
see TI's Terms of Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster
collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge,
explore ideas and help solve problems with fellow engineers.
TI Embedded Processors Wiki Texas Instruments Embedded Processors Wiki. Established to help
developers get started with Embedded Processors from Texas Instruments and to foster
innovation and growth of general knowledge about the hardware and software surrounding
these devices.
8.3
Additional Information
Texas Instruments offers a wide selection of cost-effective, low-power RF solutions for proprietary and
standard-based wireless applications for use in industrial and consumer applications. The selection
includes RF transceivers, RF transmitters, RF front ends, and Systems-on-Chips as well as various
software solutions for the sub-1-GHz and 2.4-GHz frequency bands.
In addition, Texas Instruments provides a large selection of support collateral such as development tools,
technical documentation, reference designs, application expertise, customer support, third-party and
university programs.
The Low-Power RF E2E Online Community provides technical support forums, videos and blogs, and the
chance to interact with engineers from all over the world.
With a broad selection of product solutions, end-application possibilities, and a range of technical support,
Texas Instruments offers the broadest low-power RF portfolio.
8.3.1
Texas Instruments Low-Power RF Website
Texas Instruments' Low-Power RF website has all the latest products, application and design notes, FAQ
section, news and events updates. Go to www.ti.com/lprf.
8.3.2
Low-Power RF Online Community
•
•
•
Forums, videos, and blogs
RF design help
E2E interaction
Join at: www.ti.com/lprf-forum.
Device and Documentation Support
Copyright © 2015, Texas Instruments Incorporated
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Product Folder Links: CC2640
35
CC2640
SWRS176 – FEBRUARY 2015
8.3.3
www.ti.com
Texas Instruments Low-Power RF Developer Network
Texas Instruments has launched an extensive network of low-power RF development partners to help
customers speed up their application development. The network consists of recommended companies, RF
consultants, and independent design houses that provide a series of hardware module products and
design services, including:
• RF circuit, low-power RF, and ZigBee design services
• Low-power RF and ZigBee module solutions and development tools
• RF certification services and RF circuit manufacturing
For help with modules, engineering services or development tools:
Search the Low-Power RF Developer Network to find a suitable partner. www.ti.com/lprfnetwork
8.3.4
Low-Power RF eNewsletter
The Low-Power RF eNewsletter is up-to-date on new products, news releases, developers’ news, and
other news and events associated with low-power RF products from TI. The Low-Power RF eNewsletter
articles include links to get more online information.
Sign up at: www.ti.com/lprfnewsletter
8.4
Trademarks
IAR Embedded Workbench is a registered trademark of IAR Systems AB.
SimpleLink, SmartRF, Code Composer Studio, CC26xx, E2E are trademarks of Texas Instruments.
ARM7 is a trademark of ARM Limited.
ARM, Cortex are registered trademarks of ARM Limited (or its subsidiaries).
ARM Thumb is a registered trademark of ARM Limited.
Bluetooth is a registered trademark of Bluetooth SIG, Inc.
CoreMark is a registered trademark of Embedded Microprocessor Benchmark Consortium.
IEEE Std 1241 is a trademark of Institute of Electrical and Electronics Engineers, Incorporated.
ZigBee is a registered trademark of ZigBee Alliance, Inc.
8.5
Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
8.6
Export Control Notice
Recipient agrees to not knowingly export or re-export, directly or indirectly, any product or technical data
(as defined by the U.S., EU, and other Export Administration Regulations) including software, or any
controlled product restricted by other applicable national regulations, received from Disclosing party under
this Agreement, or any direct product of such technology, to any destination to which such export or reexport is restricted or prohibited by U.S. or other applicable laws, without obtaining prior authorization from
U.S. Department of Commerce and other competent Government authorities to the extent required by
those laws.
8.7
Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.
36
Device and Documentation Support
Copyright © 2015, Texas Instruments Incorporated
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Product Folder Links: CC2640
CC2640
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SWRS176 – FEBRUARY 2015
9 Mechanical Packaging and Orderable Information
9.1
Packaging Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and
revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2015, Texas Instruments Incorporated
Mechanical Packaging and Orderable Information
Submit Documentation Feedback
Product Folder Links: CC2640
37
PACKAGE OPTION ADDENDUM
www.ti.com
5-Sep-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
CC2640F128RGZR
ACTIVE
VQFN
RGZ
48
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
CC2640
F128
CC2640F128RGZT
ACTIVE
VQFN
RGZ
48
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
CC2640
F128
CC2640F128RHBR
ACTIVE
VQFN
RHB
32
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU | Call TI
Level-3-260C-168 HR
-40 to 85
CC2640
F128
CC2640F128RHBT
ACTIVE
VQFN
RHB
32
250
Green (RoHS
& no Sb/Br)
CU NIPDAU | Call TI
Level-3-260C-168 HR
-40 to 85
CC2640
F128
CC2640F128RSMR
ACTIVE
VQFN
RSM
32
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
CC2640
F128
CC2640F128RSMT
ACTIVE
VQFN
RSM
32
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-40 to 85
CC2640
F128
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
5-Sep-2015
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Aug-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
CC2640F128RGZR
VQFN
RGZ
48
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
2500
330.0
16.4
7.3
7.3
1.1
12.0
16.0
Q2
CC2640F128RGZT
VQFN
RGZ
48
250
180.0
16.4
7.3
7.3
1.1
12.0
16.0
Q2
CC2640F128RHBR
VQFN
RHB
32
3000
330.0
12.4
5.3
5.3
1.1
8.0
12.0
Q2
CC2640F128RHBT
VQFN
RHB
32
250
180.0
12.4
5.3
5.3
1.1
8.0
12.0
Q2
CC2640F128RSMR
VQFN
RSM
32
3000
330.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
CC2640F128RSMT
VQFN
RSM
32
250
180.0
12.4
4.25
4.25
1.15
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Aug-2015
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CC2640F128RGZR
VQFN
RGZ
48
2500
367.0
367.0
38.0
CC2640F128RGZT
VQFN
RGZ
48
250
210.0
185.0
35.0
CC2640F128RHBR
VQFN
RHB
32
3000
367.0
367.0
35.0
CC2640F128RHBT
VQFN
RHB
32
250
210.0
185.0
35.0
CC2640F128RSMR
VQFN
RSM
32
3000
367.0
367.0
35.0
CC2640F128RSMT
VQFN
RSM
32
250
210.0
185.0
35.0
Pack Materials-Page 2
IMPORTANT NOTICE
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changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
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supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
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TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
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