Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CC2640 SWRS176 – FEBRUARY 2015 CC2640 SimpleLink™ Bluetooth® Smart Wireless MCU 1 Device Overview 1.1 Features 1 • Microcontroller – Powerful ARM® Cortex®-M3 – EEMBC CoreMark® score: 142 – Up to 48-MHz Clock Speed – 128KB of In-System Programmable Flash – 8-KB SRAM for Cache – 20-KB Ultra-Low Leakage SRAM – 2-Pin cJTAG and JTAG Debugging – Supports Over-The-Air Upgrade (OTA) • Ultra-Low Power Sensor Controller – Can run autonomous from the rest of the system – 16-Bit Architecture – 2-KB Ultra-Low Leakage SRAM for Code and Data • Efficient Code Size Architecture, Placing Drivers, Bluetooth® Low Energy Controller, and Bootloader in ROM • RoHS-Compliant Packages – 4-mm × 4-mm RSM QFN32 (10 GPIOs) – 5-mm × 5-mm RHB QFN32 (15 GPIOs) – 7-mm x 7-mm RGZ QFN48 (31 GPIOs) • Peripherals – All Digital Peripheral Pins can be Routed to any GPIO – 4 General-Purpose Timer Modules (8 × 16-Bit or 4 × 32-Bit Timer, PWM Each) – 12-Bit ADC, 200-ksamples/s, 8-Channel Analog MUX – Continuous Time Comparator – Ultra-Low Power Analog Comparator – Programmable Current Source – UART – 2x SSI (SPI, µW, TI) – I2C – I2S – Real-Time Clock (RTC) – AES-128 Security Module – True Random Number Generator (TRNG) – 10, 15, or 31 GPIOs, Depending on Package Option – Support for 8 Capacitive Sensing Buttons – Integrated Temperature Sensor • External System – On-Chip internal DC-DC Converter – Very Few External Components – Seamless Integration With the SimpleLink CC2590 and CC2592 Range Extenders – Pin Compatible With the SimpleLink CC13xx in 4-mm × 4-mm and 5-mm × 5-mm QFN Packages • Low Power – Wide Supply Voltage Range • Normal Operation: 1.8 to 3.8 V • External Regulator Mode: 1.7 to 1.95 V – Active-mode RX: 5.9 mA – Active-mode TX at 0 dBm: 6.1 mA – Active-mode TX at +5 dBm: 9.1 mA – Active-mode MCU: 61 µA/MHz – Active-mode MCU: 48.5 CoreMark/mA – Active-mode Sensor Controller: 8.2 µA/MHz – Standby: 1 µA (RTC Running and RAM/CPU Retention) – Shutdown: 100 nA (Wake-up on External Events) • RF Section – 2.4 GHz RF Transceiver Compatible With Bluetooth Low Energy (BLE) 4.1 specification – Excellent Receiver Sensitivity (–97 dBm for BLE), Selectivity, and Blocking Performance – Programmable Output Power up to +5 dBm – Single-ended or Differential RF Interface – Suitable for Systems Targeting Compliance With Worldwide Radio Frequency Regulations • ETSI EN 300 328 (Europe) • EN 300 440 Class 2 (Europe) • FCC CFR47 Part 15 (US) • ARIB STD-T66 (Japan) • Tools and Development Environment – Full-Feature and Low-Cost Development Kits – Multiple Reference Designs for Different RF Configurations – Packet Sniffer PC Software – Sensor Controller Studio – SmartRF™ Studio – SmartRF Flash Programmer 2 – IAR Embedded Workbench® for ARM – Code Composer Studio™ 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CC2640 SWRS176 – FEBRUARY 2015 1.2 • • • Applications Home and Building Automation – Connected Appliances – Lighting – Locks – Gateways – Security Systems Industrial – Logistics – Production and Manufacturing – Automation – Asset Tracking and Management – Remote Display – Cable Replacement – HMI – Access Control Retail – Beacons – Advertising – ESL / Price Tags – Point of Sales / Payment Systems 1.3 www.ti.com • • • • Health and Medical – Thermometers – SpO2 – Blood Glucose and Pressure Meters – Weight-scales – Vitals Monitoring – Hearing Aids Sports and Fitness – Activity Monitors and Fitness Trackers – Heart Rate Monitors – Running Sensors – Biking Sensors – Sports Watches – Gym Equipment – Team Sports Equipment HID – Remote Controls – Keyboards and Mice – Gaming Accessories – Toys – Trackers – Luggage-tags – Wearables Description The CC2640 is a wireless MCU targeting Bluetooth Smart applications. The device is a member of the CC26xx family of cost-effective, ultra-low power, 2.4-GHz RF devices. Very low active RF and MCU current, and low-power mode current consumption provides excellent battery lifetime and allows operation on small coin cell batteries and in energy-harvesting applications. The CC2640 contains a 32-bit ARM Cortex-M3 running at 48-MHz as the main processor and a rich peripheral feature set, including a unique ultra-low power sensor controller, ideal for interfacing external sensors and/or collecting analog and digital data autonomously while the rest of the system is in sleep mode. This makes the CC2640 ideal for a wide range of applications where long battery lifetime, small form factor, and ease of use is important. The Bluetooth Low Energy controller is embedded into ROM and run partly on an ARM Cortex®-M0 processor. This architecture improves overall system performance and power consumption and frees up flash memory for the application. The Bluetooth Smart stack is available free of charge from www.ti.com. Device Information (1) PART NUMBER PACKAGE BODY SIZE CC2640F128RGZ RGZ (QFN48) 7.00 mm × 7.00 mm CC2640F128RHB RHB (QFN32) 5.00 mm × 5.00 mm (1) 2 For more information, see Section 9, Mechanical Packaging and Orderable Information. Device Overview Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 Device Information(1) (continued) PART NUMBER CC2640F128RSM PACKAGE BODY SIZE RSM (QFN32) 4.00 mm × 4.00 mm Device Overview Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 3 CC2640 SWRS176 – FEBRUARY 2015 1.4 www.ti.com Functional Block Diagram Section 1.4 shows a block diagram for the CC2640. Figure 1-1. Block Diagram 4 Device Overview Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 Table of Contents 1 2 3 4 5 Device Overview ......................................... 1 5.16 Battery Monitor ...................................... 19 1.1 Features .............................................. 1 5.17 Continuous Time Comparator ....................... 20 1.2 Applications ........................................... 2 1.3 Description ............................................ 2 1.4 Functional Block Diagram ............................ 4 ................... ..................... 5.20 DC Characteristics .................................. 5.21 Control Input AC Characteristics .................... 5.22 Synchronous Serial Interface (SSI) Characteristics. 5.23 Typical Characteristics .............................. Detailed Description ................................... 6.1 Overview ............................................ 6.2 Main CPU ........................................... 6.3 RF Core ............................................. 6.4 Sensor Controller ................................... 6.5 Memory .............................................. 6.6 Debug ............................................... 6.7 Power Management ................................. 6.8 Clock Systems ...................................... 6.9 General Peripherals and Modules .................. 6.10 System Architecture ................................. Application Circuit ..................................... Device and Documentation Support ............... 8.1 Device Support ...................................... 8.2 Documentation Support ............................. 8.3 Additional Information ............................... 8.4 Trademarks.......................................... 8.5 Electrostatic Discharge Caution ..................... 8.6 Export Control Notice ............................... 8.7 Glossary ............................................. Revision History ......................................... 6 Device Comparison ..................................... 7 Terminal Configuration and Functions .............. 8 4.1 Pin Diagram – RSM Package ........................ 8 4.2 Signal Descriptions – RSM Package ................. 8 4.3 Pin Diagram – RHB Package 4.4 Signal Descriptions – RHB Package ................ 10 4.5 Pin Diagram – RGZ Package ....................... 11 4.6 Signal Descriptions – RGZ Package ................ 11 ........................ 6 9 Specifications ........................................... 13 5.1 Absolute Maximum Ratings ......................... 13 5.2 ESD Ratings 5.3 Recommended Operating Conditions ............... 13 5.4 Thermal Characteristics ............................. 14 5.5 Electrical Characteristics ............................ 15 5.6 General Characteristics ............................. 16 5.7 1-Mbps GFSK (Bluetooth Low Energy) – RX ....... 16 5.8 5.9 1-Mbps GFSK (Bluetooth Low Energy) – TX ....... 17 1-Mbps GFSK (Bluetooth Low Energy) – Common RX/TX ............................................... 17 5.10 24-MHz Crystal Oscillator (XOSC_HF) 5.11 5.12 5.13 5.14 5.15 ........................................ ............. 32.768-kHz Crystal Oscillator (XOSC_LF) .......... 48-MHz RC Oscillator (RCOSC_HF) ............... 32-kHz RC Oscillator (RCOSC_LF)................. ADC Characteristics................................. Temperature Sensor ................................ 13 7 8 18 18 18 18 9 5.18 Low-Power Clocked Comparator 20 5.19 Programmable Current Source 20 21 21 21 22 25 25 25 25 26 27 27 28 29 29 30 31 33 33 35 35 36 36 36 36 19 Mechanical Packaging and Orderable Information .............................................. 37 19 9.1 Packaging Information .............................. Table of Contents Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 37 5 CC2640 SWRS176 – FEBRUARY 2015 www.ti.com 2 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. 6 DATE REVISION NOTES February 2015 * Initial Release Revision History Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 3 Device Comparison Table 3-1. Device Family Overview (1) (2) GPIO Package (1) 20 31, 15, 10 RGZ, RHB, RSM 20 31, 15, 10 RGZ, RHB, RSM 128 20 31, 15, 10 RGZ, RHB, RSM 128 20 31, 15, 10 RGZ, RHB, RSM Device PHY Support Flash (KB) RAM (KB) CC2650F128xxx Multi-Protocol (2) 128 CC2640F128xxx Bluetooth low energy 128 CC2630F128xxx IEEE 802.15.4 ( ZigBee®/6LoWPAN) CC2620F128xxx IEEE 802.15.4 (RF4CE) Package designator replaces the xxx in device name to form a complete device name, RGZ is 7-mm x 7-mm QFN48, RHB is 5-mm x 5mm QFN32, and RSM is 4-mm x 4-mm QFN32. The CC2650 supports all PHYs and can be reflashed to run all the supported standards. Device Comparison Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 7 CC2640 SWRS176 – FEBRUARY 2015 www.ti.com 4 Terminal Configuration and Functions NOTE I/O pins marked in bold have high drive capabilities. I/O pins marked in italics have analog capabilities. 17 VSS 18 DCDC_SW 19 VDDS_DCDC 20 VSS 21 RESET_N 22 DIO_5 23 DIO_6 Pin Diagram – RSM Package 24 DIO_7 4.1 DIO_8 25 16 DIO_4 DIO_9 26 15 DIO_3 VDDS 27 14 JTAG_TCKC VDDR 28 13 JTAG_TMSC CC26xx VSS 29 12 DCOUPL QFN32 4x4 RSM X24M_N 30 X24M_P 31 11 VDDS2 10 DIO_2 3 4 5 6 7 8 VSS X32K_Q1 X32K_Q2 VSS DIO_0 2 RX_TX 1 RF_P 9 RF_N VDDR_RF 32 DIO_1 Figure 4-1. RSM (4 mm × 4 mm) Pinout, 0.4-mm Pitch 4.2 Signal Descriptions – RSM Package Table 4-1. Signal Descriptions – RSM Package Pin Name Pin Pin Type Description RF_P 1 RF I/O Positive RF input signal to LNA during RX Positive RF output signal to PA during TX RF_N 2 RF I/O Negative RF input signal to LNA during RX Negative RF output signal to PA during TX RX_TX 4 RF I/O Optional bias pin for the RF LNA VDDS 27 Power 1.8 V to 3.8 V main chip supply (1) VDDS2 11 Power 1.8 V to 3.8 V GPIO supply (1) VDDS_DCDC 19 Power 1.8 V to 3.8 V DC/DC supply. Tie to ground for external regulator mode (1.7 V to 1.95 V operation) VDDR 28 Power 1.7 V to 1.95 V supply, typically connect to output of internal DC/DC (2) (3) VDDR_RF 32 Power 1.7 V to 1.95 V supply, typically connect to output of internal DC/DC (4) (3) DCOUPL 12 Power 1.27 V regulated digital-supply decoupling capacitor (3) VSS 3, 7, 17, 20, 29 Power Ground (1) (2) (3) (4) 8 See Section 8.2, technical reference manual for more details. If internal DC/DC is not used, this pin is supplied internally from the main LDO. Do not supply external circuitry from this pin. If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO. Terminal Configuration and Functions Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 Table 4-1. Signal Descriptions – RSM Package (continued) Pin Name Pin Pin Type Description DCDC_SW 18 Power Output from internal DC/DC (1). Tie to ground for external regulator mode (1.7 V to 1.95 V operation) EGP Power Ground – Exposed Ground Pad RESET_N 21 Digital input Reset, active-low. No internal pullup DIO_0 8 Digital I/O GPIO, Sensor Controller, High drive capability DIO_1 9 Digital I/O GPIO, Sensor Controller, High drive capability DIO_2 10 Digital I/O GPIO, Sensor Controller, High drive capability DIO_3 15 Digital I/O GPIO, High drive capability, JTAG_TDO DIO_4 16 Digital I/O GPIO, High drive capability, JTAG_TDI DIO_5 22 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_6 23 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_7 24 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_8 25 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_9 26 Digital/Analog I/O GPIO, Sensor Controller, Analog JTAG_TMSC 13 Digital I/O JTAG TMSC JTAG_TCKC 14 Digital I/O JTAG TCKC X32K_Q1 5 Analog I/O 32 kHz crystal oscillator pin 1 X32K_Q2 6 Analog I/O 32 kHz crystal oscillator pin 2 X24M_N 30 Analog I/O 24 MHz crystal oscillator pin 1 X24M_P 31 Analog I/O 24 MHz crystal oscillator pin 2 17 DCDC_SW 18 VDDS_DCDC 19 RESET_N 20 DIO_7 21 DIO_8 22 DIO_9 23 DIO_10 Pin Diagram – RHB Package 24 DIO_11 4.3 DIO_12 25 16 DIO_6 DIO_13 26 15 DIO_5 DIO_14 27 14 JTAG_TCKC VDDS 28 13 JTAG_TMSC CC26xx VDDR 29 12 DCOUPL QFN32 5x5 RHB X24M_N 30 X24M_P 31 11 VDDS2 10 DIO_4 3 4 5 6 7 8 RX_TX X32K_Q2 DIO_0 DIO_1 DIO_2 2 X32K_Q1 1 RF_P 9 RF_N VDDR_RF 32 DIO_3 Figure 4-2. RHB (5 mm × 5 mm) Pinout, 0.5-mm Pitch Terminal Configuration and Functions Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 9 CC2640 SWRS176 – FEBRUARY 2015 4.4 www.ti.com Signal Descriptions – RHB Package Table 4-2. Signal Descriptions – RHB Package Pin Name Pin Pin Type Description RF_P 1 RF I/O Positive RF input signal to LNA during RX Positive RF output signal to PA during TX RF_N 2 RF I/O Negative RF input signal to LNA during RX Negative RF output signal to PA during TX RX_TX 3 RF I/O Optional bias pin for the RF LNA VDDS 28 Power 1.8 V to 3.8 V main chip supply (1) VDDS2 11 Power 1.8 V to 3.8 V GPIO supply (1) VDDS_DCDC 18 Power 1.8 V to 3.8 V DC/DC supply VDDR 29 Power 1.7 V to 1.95 V supply, typically connect to output of internal DC/DC (2) (3) VDDR_RF 32 Power 1.7 V to 1.95 V supply, typically connect to output of internal DC/DC (4) (3) DCOUPL 12 Power 1.27 V regulated digital-supply decoupling (3) DCDC_SW 17 Power Output from internal DC/DC (1) EGP Power Ground – Exposed Ground Pad RESET_N 19 Digital input Reset, active-low. No internal pullup DIO_0 6 Digital I/O GPIO, Sensor Controller DIO_1 7 Digital I/O GPIO, Sensor Controller DIO_2 8 Digital I/O GPIO, Sensor Controller, High drive capability DIO_3 9 Digital I/O GPIO, Sensor Controller, High drive capability DIO_4 10 Digital I/O GPIO, Sensor Controller, High drive capability DIO_5 15 Digital I/O GPIO, High drive capability, JTAG_TDO DIO_6 16 Digital I/O GPIO, High drive capability, JTAG_TDI DIO_7 20 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_8 21 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_9 22 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_10 23 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_11 24 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_12 25 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_13 26 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_14 27 Digital/Analog I/O GPIO, Sensor Controller, Analog JTAG_TMSC 13 Digital I/O JTAG TMSC, High drive capability JTAG_TCKC 14 Digital I/O JTAG TCKC X32K_Q1 4 Analog I/O 32 kHz crystal oscillator pin 1 X32K_Q2 5 Analog I/O 32 kHz crystal oscillator pin 2 X24M_N 30 Analog I/O 24 MHz crystal oscillator pin 1 X24M_P 31 Analog I/O 24 MHz crystal oscillator pin 2 (1) (2) (3) (4) 10 See Section 8.2, technical reference manual for more details. If internal DC/DC is not used, this pin is supplied internally from the main LDO. Do not supply external circuitry from this pin. If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO. Terminal Configuration and Functions Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com 25 JTAG_TCKC 26 DIO_16 27 DIO_17 29 DIO_19 28 DIO_18 30 DIO_20 31 DIO_21 32 DIO_22 33 DCDC_SW 34 VDDS_DCDC 35 RESET_N Pin Diagram – RGZ Package 36 DIO_23 4.5 SWRS176 – FEBRUARY 2015 DIO_24 37 24 JTAG_TMSC DIO_25 38 23 DCOUPL DIO_26 39 22 VDDS3 DIO_27 40 21 DIO_15 DIO_28 41 20 DIO_14 DIO_29 42 19 DIO_13 CC26xx DIO_30 43 18 DIO_12 QFN48 7x7 RGZ VDDS 44 VDDR 45 17 DIO_11 16 DIO_10 X24M_N 46 15 DIO_9 X24M_P 47 14 DIO_8 13 VDDS2 4 5 6 7 8 9 X32K_Q2 DIO_0 DIO_1 DIO_2 DIO_3 DIO_4 DIO_7 12 3 X32K_Q1 DIO_6 11 2 DIO_5 10 1 RF_P RF_N VDDR_RF 48 Figure 4-3. RGZ (7 mm × 7 mm) Pinout, 0.5-mm Pitch 4.6 Signal Descriptions – RGZ Package Table 4-3. Signal Descriptions – RGZ Package Pin Name Pin Pin Type Description RF_P 1 RF I/O Positive RF input signal to LNA during RX Positive RF output signal to PA during TX RF_N 2 RF I/O Negative RF input signal to LNA during RX Negative RF output signal to PA during TX VDDS 44 Power 1.8 V to 3.8 V main chip supply (1) VDDS2 13 Power 1.8 V to 3.8 V DIO supply (1) VDDS3 22 Power 1.8 V to 3.8 V DIO supply (1) VDDS_DCDC 34 Power 1.8 V to 3.8 V DC/DC supply VDDR 45 Power 1.7 V to 1.95 V supply, typically connect to output of internal DC/DC (2) (3) VDDR_RF 48 Power 1.7 V to 1.95 V supply, typically connect to output of internal DC/DC (4) (3) DCOUPL 23 Power 1.27 V regulated digital-supply decoupling capacitor (3) Power Ground – Exposed Ground Pad EGP DCDC_SW 33 Power Output from internal DC/DC (1) RESET_N 35 Digital input Reset, active-low. No internal pullup DIO_0 5 Digital I/O GPIO, Sensor Controller (1) (2) (3) (4) See Section 8.2, technical reference manual for more details. If internal DC/DC is not used, this pin is supplied internally from the main LDO. Do not supply external circuitry from this pin. If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO. Terminal Configuration and Functions Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 11 CC2640 SWRS176 – FEBRUARY 2015 www.ti.com Table 4-3. Signal Descriptions – RGZ Package (continued) Pin Name Pin Pin Type Description DIO_1 6 Digital I/O GPIO, Sensor Controller DIO_2 7 Digital I/O GPIO, Sensor Controller DIO_3 8 Digital I/O GPIO, Sensor Controller DIO_4 9 Digital I/O GPIO, Sensor Controller DIO_5 10 Digital I/O GPIO, Sensor Controller, High drive capability DIO_6 11 Digital I/O GPIO, Sensor Controller, High drive capability DIO_7 12 Digital I/O GPIO, Sensor Controller, High drive capability DIO_8 14 Digital I/O GPIO DIO_9 15 Digital I/O GPIO DIO_10 16 Digital I/O GPIO DIO_11 17 Digital I/O GPIO DIO_12 18 Digital I/O GPIO DIO_13 19 Digital I/O GPIO DIO_14 20 Digital I/O GPIO DIO_15 21 Digital I/O GPIO DIO_16 26 Digital I/O GPIO, JTAG_TDO, High drive capability DIO_17 27 Digital I/O GPIO, JTAG_TDI, High drive capability DIO_18 28 Digital I/O GPIO DIO_19 29 Digital I/O GPIO DIO_20 30 Digital I/O GPIO DIO_21 31 Digital I/O GPIO DIO_22 32 Digital I/O GPIO DIO_23 36 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_24 37 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_25 38 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_26 39 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_27 40 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_28 41 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_29 42 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_30 43 Digital/Analog I/O GPIO, Sensor Controller, Analog JTAG_TMSC 24 Digital I/O JTAG TMSC, High drive capability JTAG_TCKC 25 Digital I/O JTAG TCKC X32K_Q1 3 Analog I/O 32 kHz crystal oscillator pin 1 X32K_Q2 4 Analog I/O 32 kHz crystal oscillator pin 2 X24M_N 46 Analog I/O 24 MHz crystal oscillator pin 1 X24M_P 47 Analog I/O 24 MHz crystal oscillator pin 2 12 Terminal Configuration and Functions Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 5 Specifications Absolute Maximum Ratings (1) (2) 5.1 [over operating free-air temperature range (unless otherwise noted)] Under no circumstances must the absolute maximum ratings be violated. Stress exceeding one or more of the limiting values may cause permanent damage to the device. MIN MAX VDDR supplied by internal DC/DC regulator or internal GLDO –0.3 4.1 V External regulator mode (VDDS and VDDR pins connected on PCB) –0.3 2.25 V Voltage on any digital pin (4) –0.3 VDDS+0.3, max 4.1 V Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X24M_N and X24M_P –0.3 VDDR+0.3, max 2.25 V Internal fixed or relative reference, voltage scaling enabled –0.3 VDDS Internal fixed reference, voltage scaling disabled –0.3 1.49 Internal relative reference, voltage scaling disabled –0.3 VDDS / 2.9 External reference, voltage scaling enabled –0.3 min (Vref × 2.9, VDDS) External reference, voltage scaling disabled –0.3 Vref –0.3 1.6 V +5 dBm 150 °C Supply voltage, VDDS (3) Supply voltage, VDDS (3) and VDDR Voltage on ADC input (Vin) Voltage on external ADC reference (Vref) Input RF level Tstg (1) (2) (3) (4) Storage temperature –40 UNIT V All voltage values are with respect to VDDS, unless otherwise noted. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. VDDS2 and VDDS3 needs to be at the same potential as VDDS. Including analog capable DIO. 5.2 ESD Ratings VALUE VESD (1) (2) 5.3 Electrostatic discharge (ESD) performance: Human Body Model (HBM), per ANSI/ESDA/JEDEC JS001 (1) Charged Device Model (CDM), per JESD22-C101 (2) All pins ±2500 RF pins ±750 non-RF pins ±750 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Recommended Operating Conditions The operating conditions for CC2640 are listed below. Ambient temperature range MIN MAX –40 85 UNIT °C Operating supply voltage (VDDS and VDDR), external regulator mode For operation in 1.8 V systems (VDDS and VDDR pins connected on PCB, internal DC/DC cannot be used) 1.7 1.95 V Operating supply voltage (VDDS) For operation in battery-powered and 3.3 V systems (internal DC/DC can be used to minimize power consumption) 1.8 3.8 V Rising supply voltage slew rate 0 100 mV/us Falling supply voltage slew rate 0 20 mV/us Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 13 CC2640 SWRS176 – FEBRUARY 2015 www.ti.com Recommended Operating Conditions (continued) The operating conditions for CC2640 are listed below. MAX UNIT Falling supply voltage slew rate, with low-power flash settings (1) MIN 3 mV/us Positive temperature gradient in No limitation for negative temperature gradient, or outside standby (2) standby mode 5 °C/s (1) (2) For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22uF VDDS input capacitor (see Figure 71) should be used to ensure compliance with this slew rate. Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in temperature. See Section 5.13 5.4 Thermal Characteristics RSM (°C/W) (1) RHB (°C/W) (1) RGZ (°C/W) (1) Junction-to-ambient thermal resistance 36.9 32.8 29.6 ΘJCtop Junction-to-case (top) thermal resistance 30.3 24.0 15.7 ΘJB Junction-to-board thermal resistance 7.6 6.8 6.2 ΨJT Junction-to-top characterization parameter 0.4 0.3 0.3 ΨJB Junction-to-board characterization parameter 7.4 6.8 6.2 Junction-to-case (bottom) thermal resistance 2.1 1.9 1.9 NAME DESCRIPTION ΘJA ΘJCbot (1) 14 °C/W = degrees Celsius per watt. Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com 5.5 SWRS176 – FEBRUARY 2015 Electrical Characteristics Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V with internal DC-DC converter, unless otherwise noted. PARAMETER Icore Core current consumption TEST CONDITIONS MIN 100 Shutdown. No clocks running, no retention 150 Standby. With RTC, CPU, RAM and (partial) register retention. RCOSC_LF 1 Standby. With RTC, CPU, RAM and (partial) register retention. XOSC_LF 1.2 Standby. With Cache, RTC, CPU, RAM and (partial) register retention. RCOSC_LF 2.5 Standby. With Cache, RTC, CPU, RAM and (partial) register retention. XOSC_LF 2.7 Idle. Supply Systems and RAM powered. Radio RX Radio RX (1) nA µA 5.9 6.1 Radio TX, 0 dBm output power (1) 6.1 Radio TX, 5 dBm output power (2) mA 9.1 (3) Peripheral power domain Delta current with domain enabled 20 µA Serial power domain Delta current with domain enabled 13 µA RF Core Delta current with power domain enabled, clock enabled, RF Core Idle 237 µA µDMA Delta current with clock enabled, module idle 130 µA Timers Delta current with clock enabled, module idle 113 µA I C Delta current with clock enabled, module idle 12 µA I2S Delta current with clock enabled, module idle 36 µA SSI Delta current with clock enabled, module idle 93 µA UART Delta current with clock enabled, module idle 164 µA 2 (1) (2) (3) UNIT 550 (2) Peripheral Current Consumption (Adds to core current Icore for each peripheral unit activated) MAX 1.45 mA + 31 µA/MHz Active. Core running CoreMark Iperi TYP Reset. RESET_N pin asserted Single-ended RF mode optimized for size and power consumption. Measured on CC2650EM-4XS Differential RF mode optimized for RF performance. Measured on CC2650EM-5XD Iperi not supported in Standby and Shutdown Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 15 CC2640 SWRS176 – FEBRUARY 2015 5.6 www.ti.com General Characteristics Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Wake-up and Timing Idle -> Active Standby -> Active Shutdown -> Active 14 µs 151 µs 1015 µs Flash Memory Supported flash erase cycles before failure Flash page/sector erase current 100 Average delta current k Cycles 12.6 mA Flash page/sector erase time (1) 8 ms Flash page/sector size 4 KB 8.15 mA 8 µs Flash write current Average delta current, 4 bytes at a time Flash write time (1) 4 bytes at a time (1) 5.7 This number is dependent on Flash aging and will increase over time and erase cycles 1-Mbps GFSK (Bluetooth Low Energy) – RX Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Receiver sensitivity Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10-3 –97 dBm Receiver sensitivity Single-ended mode. Measured on CC2650EM-4XS, at the SMA connector, BER = 10-3 –96 dBm Receiver saturation Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10-3 4 dBm Receiver saturation Single-ended mode. Measured on CC2650EM-4XS, at the SMA connector, BER = 10-3 0 dBm Co-channel rejection (1) Wanted signal at -67 dBm, modulated interferer in channel, BER = 10-3 -6 dB Selectivity, ±1 MHz (1) Wanted signal at -67 dBm, modulated interferer at ±1 MHz, BER = 10-3 7 / 3 (2) dB Selectivity, ±2 MHz (1) Wanted signal at -67 dBm, modulated interferer at ±2 MHz, BER = 10-3 34 / 25 (2) dB Selectivity, ±3 MHz (1) Wanted signal at -67 dBm, modulated interferer at ±3 MHz, BER = 10-3 38 / 26 (2) dB Selectivity, ±4 MHz (1) Wanted signal at -67 dBm, modulated interferer at ±4 MHz, BER = 10-3 42 / 29 (2) dB Selectivity, ±5 MHz or more (1) Wanted signal at -67 dBm, modulated interferer at ≥ ±5 MHz, BER = 10-3 32 dB Selectivity, Image frequency (1) Wanted signal at -67 dBm, modulated interferer at image frequency, BER = 10-3 25 dB Selectivity, Image frequency ±1 MHz (1) Wanted signal at -67 dBm, modulated interferer at ±1 MHz from image frequency, BER = 10-3 3 / 26 (2) dB Out-of-band blocking (3) 30 MHz to 2000 MHz –20 dBm Out-of-band blocking 2003 MHz to 2399 MHz –5 dBm Out-of-band blocking 2484 MHz to 2997 MHz –8 dBm Out-of-band blocking 3000 MHz to 12.75 GHz –8 dBm Intermodulation Wanted signal at 2402 MHz, -64 dBm. Two interferers at 2405 and 2408 MHz respectively, at the given power level -34 dBm (1) (2) (3) 16 Numbers given as I/C dB X / Y, where X is +N MHz and Y is -N MHz Excluding one exception at Fwanted / 2, per Bluetooth Specification Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 1-Mbps GFSK (Bluetooth Low Energy) – RX (continued) Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Conducted measurement in a 50 Ω single-ended load. Suitable Spurious emissions, 30 to 1000 for systems targeting compliance with EN 300 328, EN 300 440 MHz class 2, FCC CFR47, Part 15 and ARIB STD-T-66 –71 dBm Conducted measurement in a 50 Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-66 –62 dBm RSSI dynamic range 70 dB RSSI accuracy ±4 dB Spurious emissions, 1 to 12.75 GHz 5.8 1-Mbps GFSK (Bluetooth Low Energy) – TX Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Output power, highest setting Differential mode, delivered to a single-ended 50-Ω load through a balun +5 dBm Output power, highest setting Measured on CC2650EM-4XS, delivered to a single-ended 50-Ω load +2 dBm Output power, lowest setting Delivered to a single-ended 50-Ω load through a balun –21 dBm f < 1 GHz, outside restricted bands –43 dBm f < 1 GHz, restricted bands ETSI –65 dBm f < 1 GHz, restricted bands FCC –76 dBm f > 1 GHz, including harmonics –46 dBm Spurious emission conducted measurement Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan) 5.9 1-Mbps GFSK (Bluetooth Low Energy) – Common RX/TX Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER Frequency error tolerance TEST CONDITIONS Difference between center frequency of the received RF signal and local oscillator frequency. Data rate error tolerance MIN TYP MAX UNIT -350 +350 kHz -750 +750 ppm Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 17 CC2640 SWRS176 – FEBRUARY 2015 www.ti.com 5.10 24-MHz Crystal Oscillator (XOSC_HF) (1) Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN Crystal frequency -40 ESR Equivalent series resistance 5 Start-up time (3) UNIT MHz 40 20 CL Crystal load capacitance (3) MAX 24 Crystal frequency tolerance (2) (1) (2) TYP ppm 60 Ω 9 pF 150 µs Probing or otherwise stopping the XTAL while the DC-DC converter is enabled may cause permanent damage to the device. Includes initial tolerance of the crystal, drift over temperature, aging and frequency pulling due to incorrect load capacitance. As per Bluetooth specification Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection 5.11 32.768-kHz Crystal Oscillator (XOSC_LF) Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN Crystal frequency TYP MAX UNIT 250 ppm 100 kΩ 12 pF 32.768 Crystal frequency tolerance, Bluetooth low energy applications -250 ESR Equivalent series resistance 30 CL Crystal load capacitance 6 kHz 5.12 48-MHz RC Oscillator (RCOSC_HF) Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN Frequency TYP Uncalibrated frequency accuracy ±1% Calibrated frequency accuracy (1) ±0.25% Start-up time (1) MAX 48 UNIT MHz 5 µs Accuracy relatively to the calibration source (XOSC_HF). 5.13 32-kHz RC Oscillator (RCOSC_LF) Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS Calibrated frequency TYP 32.8 Temperature coefficient 18 MIN 50 Specifications MAX UNIT kHz ppm/°C Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com 5.14 SWRS176 – FEBRUARY 2015 ADC Characteristics (1) Tc=25°C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted. PARAMETER TEST CONDITIONS MIN Input voltage range TYP 0 Internal 4.3 V equivalent reference (2) Integral nonlinearity (2) Internal 4.3 V equivalent reference , 200 ksps, 9.6 kHz input tone ENOB Effective number of bits THD Total harmonic distortion SINA Signal-to-noise and D/ distortion ratio SNDR SFDR Spurious-free dynamic range Conversion time (1) (2) (3) (4) Bits 200 Internal 4.3 V equivalent reference (2) DNL (3) Differential nonlinearity INL (4) V 12 Sample rate Gain error UNIT VDDS Resolution Offset MAX ksps 2 LSB 2.4 LSB >–1 LSB ±3 LSB 9.8 VDDS as reference, 200 ksps, 9.6 kHz input tone 10 Internal 1.44 V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300 Hz input tone 11.1 Internal 4.3 V equivalent reference (2), 200 ksps, 9.6 kHz input tone –65 VDDS as reference, 200 ksps, 9.6 kHz input tone –69 Internal 1.44 V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300 Hz input tone –71 Internal 4.3 V equivalent reference (2), 200 ksps, 9.6 kHz input tone 60 VDDS as reference, 200 ksps, 9.6 kHz input tone 63 Internal 1.44 V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300 Hz input tone 69 Internal 4.3 V equivalent reference (2), 200 ksps, 9.6 kHz input tone 67 VDDS as reference, 200 ksps, 9.6 kHz input tone 72 Internal 1.44 V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300 Hz input tone 73 Serial conversion, time-to-output, 24 MHz clock 50 Bits dB dB dB clockcycles Current consumption Internal 4.3 V equivalent reference (2) 0.66 mA Current consumption VDDS as reference 0.75 mA Internal reference voltage Internal 4.3 V equivalent reference (2) 1.44 V Internal reference voltage VDDS as reference VDDS / 2.82 V Using IEEE Std 1241™-2010 for terminology and test methods. Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3V No missing codes. Positive DNL typically varies from +0.3 to +3.5 depending on device, see Figure 5-13 For a typical example, see Figure 5-14 5.15 Temperature Sensor Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN Resolution TYP MAX 4 Range –40 UNIT °C 85 °C Accuracy ±5 °C Supply voltage coefficient (1) 3.2 °C/V (1) Automatically compensated when using supplied driver libraries. 5.16 Battery Monitor Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN Resolution TYP MAX 50 Range 1.8 UNIT mV 3.8 Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 V 19 CC2640 SWRS176 – FEBRUARY 2015 www.ti.com Battery Monitor (continued) Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN Accuracy 5.17 TYP MAX 13 UNIT mV Continuous Time Comparator Tc=25°C, VDDS = 3.0 V, unless otherwise noted. MAX UNIT Input voltage range PARAMETER TEST CONDITIONS 0 VDDS V External reference voltage 0 VDDS V Internal reference voltage MIN DCOUPL as reference 1.27 Offset Hysteresis Decision time Step from -10mV to +10mV Current consumption when enabled (1) TYP (1) V 3 mV <2 mV 0.72 µs 8.6 µA Additionally the bias module needs to be enabled when running in standby mode. 5.18 Low-Power Clocked Comparator Tc=25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS Input voltage range MIN TYP 0 Clock frequency MAX UNIT VDDS V 32 kHz Internal reference voltage, VDDS / 2 1.49 - 1.51 V Internal reference voltage, VDDS / 3 1.01 - 1.03 V Internal reference voltage, VDDS / 4 0.78 - 0.79 V Internal reference voltage, DCOUPL / 1 1.25 - 1.28 V Internal reference voltage, DCOUPL / 2 0.63 - 0.65 V Internal reference voltage, DCOUPL / 3 0.42 - 0.44 V Internal reference voltage, DCOUPL / 4 0.33 - 0.34 V Offset <2 mV Hysteresis <5 mV <1 clock-cycle 362 nA Decision time Step from -50mV to +50mV Current consumption when enabled 5.19 Programmable Current Source Tc=25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS Current source programmable output range Resolution Current consumption (1) (1) 20 Including current source at maximum programmable output MIN TYP MAX UNIT 0.25 20 µA 0.25 µA 23 µA Additionally the bias module needs to be enabled when running in standby mode. Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 5.20 DC Characteristics PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TA = 25°C, VDDS = 1.8 V GPIO VOH at 8mA load IOCURR=2, high drive GPIOs only 1.54 V GPIO VOL at 8mA load IOCURR=2, high drive GPIOs only 0.26 V GPIO VOH at 4mA load IOCURR=1 1.58 V GPIO VOL at 4mA load IOCURR=1 0.21 V GPIO pullup current Input mode, pullup enabled, Vpad=0V 71.7 µA GPIO pulldown current Input mode, pulldown enabled, Vpad=VDDS 21.1 µA GPIO high/low input transition, no hysteresis IH=0, transition between reading 0 and reading 1 0.88 V GPIO low-to-high input transition, with hysteresis IH=1, transition voltage for input read as 0→1 1.07 V GPIO high-to-low input transition, with hysteresis IH=1, transition voltage for input read as 1→0 0.74 V GPIO input hysteresis IH=1, difference between 0→1 and 1→0 points 0.33 V GPIO VOH at 8mA load IOCURR=2, high drive GPIOs only 2.68 V GPIO VOL at 8mA load IOCURR=2, high drive GPIOs only 0.33 V GPIO VOH at 4mA load IOCURR=1 2.72 V GPIO VOL at 4mA load IOCURR=1 0.28 V TA = 25°C, VDDS = 3.0 V TA = 25°C, VDDS = 3.8 V GPIO pullup current Input mode, pullup enabled, Vpad=0V 277 µA GPIO pulldown current Input mode, pulldown enabled, Vpad=VDDS 113 µA GPIO high/low input transition, no hysteresis IH=0, transition between reading 0 and reading 1 1.67 V GPIO low-to-high input transition, with hysteresis IH=1, transition voltage for input read as 0→1 1.94 V GPIO high-to-low input transition, with hysteresis IH=1, transition voltage for input read as 1→0 1.54 V GPIO input hysteresis IH=1, difference between 0→1 and 1→0 points 0.4 V 5.21 Control Input AC Characteristics TA = -40°C to 85°C, VDDS = 1.7 V to 3.8 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN RESET_N low duration TYP MAX UNIT μs 1 5.22 Synchronous Serial Interface (SSI) Characteristics Tc=25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER NO. S1 PARAMETER tclk_per PARAMETER NAME MIN SSIClk cycle time 12 TYP MAX UNIT 65024 system clocks Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 21 CC2640 SWRS176 – FEBRUARY 2015 www.ti.com 5.23 Typical Characteristics 6 -94 5 Output Power (dBm) Sensitivity (dBm) -95 -96 -97 4 4XS 2-dBm Setting 5XD 5-dBm Setting 3 2 1 -98 Sensitivity 4XS Sensitivity 5XD -99 -40 -30 -20 -10 0 10 20 30 40 Temperature (qC) 50 60 70 0 -40 -30 -20 -10 0 80 10 20 30 40 Temperature (qC) 50 60 70 80 Figure 5-2. Output Power vs Temperature Figure 5-1. BLE Sensitivity vs Temperature 7 16 4XS 2-dBm Setting 5XD 5-dBm Setting 15 14 6.8 RX Current (mA) TX Current (mA) 13 12 11 10 9 6.6 6.4 6.2 6 8 7 5.8 6 5 4 1.8 5.6 -40 -30 -20 -10 2 2.2 2.4 2.6 2.8 3 VDDS (V) 3.2 3.4 3.6 3.8 0 10 20 30 40 Temperature (qC) 50 60 70 80 D001 D015 Figure 5-3. Transmit Current Consumption vs. Supply Voltage (VDDS) Figure 5-4. RX Mode Current Consumption vs Temperature 12 6 10 5 Output power (dBm) TX Current (mA) 5XD RX Current 4XS RX Current 8 6 4 4 3 2 2 5XD 5dBm Setting 4XS 2dBm Setting 0 -40 -30 -20 -10 0 10 20 30 40 Temperature (qC) 50 60 70 1 5XD 5dBm Setting 4XS 2dBm Setting 80 D002 Figure 5-5. TX Mode Current Consumption vs Temperature 22 0 1.8 2.3 2.8 VDDS (V) 3.3 3.8 D003 Figure 5-6. TX Output Power vs Supply Voltage (VDDS) Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 3.1 Active Mode Current Consumpstion (mA) -95 Sensitivity (dBm) -96 -97 -98 -99 -100 BLE 5XD Sensitivity BLE 4XS Sensitivity -101 1.8 2.3 2.8 VDDS (V) 3.3 Active Mode Current 3.05 3 2.95 2.9 2.85 -40 -30 -20 -10 3.8 50 60 70 80 D006 Figure 5-8. Active Mode Current Consumption vs Temperature 4 5 Standby Mode Current Active Mode Current 3.5 4.5 3 4 Current (uA) Current Consumption (mA) 10 20 30 40 Temperature (qC) D004 Figure 5-7. BLE Sensitivity vs Supply Voltage (VDDS) 3.5 3 2.5 2 1.5 1 2.5 2 1.8 0.5 2.3 2.8 VDDS (V) 3.3 0 -20 3.8 0 10 20 30 40 50 Temperature (qC) 60 70 80 D008 Figure 5-10. Standby Mode Current Consumption With RCOSC RTC vs Temperature 1006.4 11.4 11.2 -10 D007 Figure 5-9. Active Mode Current Consumption vs Supply Voltage (VDDS) Fs= 200 kHz, No Averaging Fs= 200 kHz, 32 samples averaging 1006.2 11 1006 10.8 ADC Code Effective Number of Bits 0 10.6 10.4 10.2 1005.8 1005.6 1005.4 10 1005.2 9.8 1005 9.6 9.4 200 300 500 1000 2000 5000 10000 20000 Input Frequency (Hz) 100000 1004.8 1.8 D009 Figure 5-11. Effective number of bits vs Input frequency (Internal Reference, No Scaling) 2.3 2.8 VDDS (V) 3.3 3.8 D012 Figure 5-12. SoC ADC Output vs Supply Voltage (Fixed Input, Internal Reference, No Scaling) Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 23 CC2640 SWRS176 – FEBRUARY 2015 www.ti.com 3.5 3 2.5 2 DNL 1.5 1 0.5 0 -0.5 -1 ADC Code 4200 4000 3800 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 0 200 -1.5 D010 Figure 5-13. DNL vs. ADC Code (Internal Reference, No Scaling) 3 2 1 INL 0 -1 -2 -3 -4 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 ADC Code D011 Figure 5-14. INL vs. ADC Code (Internal Reference, No Scaling) 1007.5 11.4 Fs= 200 kHz, No Averaging Fs= 200 kHz, 32 samples averaging 11.2 Effective Number of Bits 1007 ADC Code 1006.5 1006 1005.5 11 10.8 10.6 10.4 10.2 10 9.8 1005 9.6 1004.5 -40 -30 -20 -10 0 10 20 30 40 Temperature (qC) 50 60 70 9.4 200 300 500 80 D013 Figure 5-15. SoC ADC Output vs Temperature (Fixed Input, Internal Reference, No Scaling) 24 1000 2000 5000 10000 20000 Input Frequency (Hz) 100000 D009 Figure 5-16. ENOB vs Sampling Frequency (Input frequency = Fs/10) Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 6 Detailed Description 6.1 Overview Section 1.4 shows a block diagram of the core modules of the CC26xx product family. 6.2 Main CPU The SimpleLink CC2640 Wireless MCU contains an ARM Cortex-M3 (CM3) 32-bit CPU, which runs the application and the higher layers of the protocol stack. The CM3 processor provides a high-performance, low-cost platform that meets the system requirements of minimal memory implementation, and low-power consumption, while delivering outstanding computational performance and exceptional system response to interrupts. CM3 features include: • 32-bit ARM Cortex-M3 architecture optimized for small-footprint embedded applications • Outstanding processing performance combined with fast interrupt handling • ARM Thumb®-2 mixed 16- and 32 bit instruction set delivers the high performance expected of a 32 bit ARM core in a compact memory size usually associated with 8- and 16-bit devices, typically in the range of a few kilobytes of memory for microcontroller-class applications: – Single-cycle multiply instruction and hardware divide – Atomic bit manipulation (bit-banding), delivering maximum memory use and streamlined peripheral control – Unaligned data access, enabling data to be efficiently packed into memory • Fast code execution permits slower processor clock or increases sleep mode time • Harvard architecture characterized by separate buses for instruction and data • Efficient processor core, system, and memories • Hardware division and fast digital-signal-processing oriented multiply accumulate • Saturating arithmetic for signal processing • Deterministic, high-performance interrupt handling for time-critical applications • Enhanced system debug with extensive breakpoint and trace capabilities • Serial wire trace reduces the number of pins required for debugging and tracing • Migration from the ARM7™ processor family for better performance and power efficiency • Optimized for single-cycle flash memory use • Ultra-low power consumption with integrated sleep modes • 1.25 DMIPS per MHz 6.3 RF Core The RF Core contains an ARM Cortex M0 that interfaces the analog RF and base-band circuitries, handles data to and from the system side, and assembles the information bits in a given packet structure. The RF core offers a high level, command-based API to the main CPU. The RF core is capable of autonomously handling the time-critical aspects of the radio protocols (Bluetooth Low Energy) thus offloading the main CPU and leaving more resources for the user application. The RF core has a dedicated 4-KB SRAM block and runs initially from separate ROM memory. The ARM Cortex M0 is not programmable by customers. Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 25 CC2640 SWRS176 – FEBRUARY 2015 6.4 www.ti.com Sensor Controller The Sensor Controller contains circuitry that can be selectively enabled in standby mode. The peripherals in this domain may be controlled by the Sensor Controller Engine which is a proprietary power-optimized CPU. This CPU can read and monitor sensors or perform other tasks autonomously, thereby significantly reducing power consumption and offloading the main CM3 CPU. The Sensor Controller is set up using a PC-based configuration tool, called Sensor Controller Studio, and typical use cases may be (but are not limited to): • Analog sensors using integrated ADC • Digital sensors using GPIOs and bit-banged I2C and/or SPI • UART communication for sensor reading or debugging • Capacitive sensing • Waveform generation • Pulse counting • Keyboard scan • Quadrature decoder for polling rotation sensors • Oscillator calibration The peripherals in the Sensor Controller include the following: • The low-power clocked comparator can be used to wake the device from any state in which the comparator is active. A configurable internal reference can be used in conjunction with the comparator. The output of the comparator can also be used to trigger an interrupt or the ADC. • Capacitive sensing functionality is implemented through the use of a constant current source, a timeto-digital converter, and a comparator. The continuous time comparator in this block can also be used as a higher-accuracy alternative to the low-power clocked comparator. The Sensor Controller will take care of baseline tracking, hysteresis, filtering and other related functions. • The ADC is a 12-bit, 200 ksamples/s ADC with 8 inputs and a built-in voltage reference. The ADC can be triggered by many different sources, including timers, I/O pins, software, the analog comparator, and the RTC. • The Sensor Controller also includes a SPI/I2C digital interface. • The analog modules can be connected to up to 8 different GPIOs. The peripherals in the Sensor Controller can also be controlled from the main application processor. 26 Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 Table 6-1. GPIOs Connected to the Sensor Controller (1) (1) 6.5 Analog capable 7x7 RGZ DIO# 5x5 RHB DIO# Y 30 14 4x4 RSM DIO# Y 29 13 Y 28 12 Y 27 11 9 Y 26 9 8 Y 25 10 7 Y 24 8 6 Y 23 7 5 N 7 4 2 N 6 3 1 N 5 2 0 N 4 1 N 3 0 N 2 N 1 N 0 Depending on the package size, up to 16 pins can be connected to the Sensor Controller. Up to 8 of them can be connected to analog modules Memory The flash memory provides nonvolatile storage for code and data. The flash memory is in-system programmable. The SRAM (static RAM) can be used for both storage of data and execution of code and is split into two 4-KB blocks and two 6-KB blocks. Retention of the RAM contents in standby mode can be enabled or disabled individually for each block to minimize power consumption. In addition, if flash cache is disabled, the 8-KB cache can be used as a general-purpose RAM. The ROM provides preprogrammed embedded TI RTOS kernel, Driverlib and lower layer protocol stack software (Bluetooth Low Energy Controller). It also contains a bootloader that can be used to reprogram the device using SPI or UART. 6.6 Debug The on-chip debug support is done through a dedicated cJTAG (IEEE 1149.7) or JTAG (IEEE 1149.1) interface. Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 27 CC2640 SWRS176 – FEBRUARY 2015 6.7 www.ti.com Power Management To minimize power consumption, the CC2640 supports a number of power modes and power management features (see Table 6-2). Table 6-2. Power Modes Software Configurable Power Modes Mode Reset Pin Held Active Idle Standby Shutdown CPU Active Off Off Off Off Flash On Available Off Off Off SRAM On On On Off Off Radio Available Available Off Off Off Supply System Current Wake-up Time to CPU Active (1) Register Retention SRAM Retention On On Duty Cycled Off Off 1.45 mA + 31 µA/MHz 550 µA 1 µA 0.15 µA 0.1 µA – 14 µs 151 µs 1015 µs 1015 µs Full Full Partial No No Full Full Full No No High-Speed Clock XOSC_HF or RCOSC_HF XOSC_HF or RCOSC_HF Off Off Off Low-Speed Clock XOSC_LF or RCOSC_LF XOSC_LF or RCOSC_LF XOSC_LF or RCOSC_LF Off Off Peripherals Available Available Off Off Off Sensor Controller Available Available Available Off Off Wake-up on RTC Available Available Available Off Off Wake-up on Pin Edge Available Available Available Available Off Wake-up on Reset Pin Available Available Available Available Available (1) Not including RTOS overhead In Active mode, the application CM3 CPU is actively executing code. Active mode provides normal operation of the processor and all of the peripherals that are currently enabled. The system clock can be any available clock source (see Table 6-2). In Idle mode, all active peripherals can be clocked, but the Application CPU core and memory are not clocked and no code is executed. Any interrupt event will bring the processor back into Active mode. In Standby, only the AON (Always-on) domain is active. An external wake event, RTC event, or Sensor Controller event is required to bring the device back to Active. MCU peripherals with retention do not need to be reconfigured when waking up again and the CPU will continue execution from where it went into Standby. All GPIOs are latched in Standby. In Shutdown, the device is entirely turned off, including the AON domain and Sensor Controller, I/Os are latched with the value they had before entering Shutdown. A change of state on any I/O pin defined as a "wake from Shutdown pin" will wake up the device and function as a reset trigger. The CPU can differentiate between reset in this way and reset-by-reset pin or power-on-reset by reading the reset status register. The only state retained in this mode is the latched I/O state and the Flash memory contents. The Sensor Controller is an autonomous processor that can control the peripherals in the Sensor Controller independently of the main CPU. This means that the main CPU does not have to wake up to for example execute an ADC sample or poll a digital sensor over SPI, and saves both current and wake-up time that would otherwise be wasted. The Sensor Controller Studio enables the user to configure the Sensor Controller and choose which peripherals are controlled and which conditions will wake up the main CPU. 28 Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com 6.8 SWRS176 – FEBRUARY 2015 Clock Systems The CC2640 supports two external and two internal clock sources. A 24 MHz crystal is required as the frequency reference for the radio. This signal is doubled internally to create a 48 MHz clock. The 32 kHz crystal is optional. Bluetooth low energy requires a slow-speed clock with better than ±500 ppm accuracy if the device is to enter any sleep mode while maintaining a connection. The internal 32 kHz RC oscillator can in some use cases be compensated to meet the requirements. The low-speed crystal oscillator is designed for use with a 32 kHz watch-type crystal. The internal high-speed oscillator (48 MHz) can be used as a clock source for the CPU subsystem. The internal low-speed oscillator (32.768 kHz) can be used as a reference if the low-power crystal oscillator is not used. The 32 kHz clock source can be used as external clocking reference through GPIO. 6.9 General Peripherals and Modules The I/O controller controls the digital I/O pins and contains multiplexer circuitry to allow a set of peripherals to be assigned to I/O pins in a flexible manner. All digital I/Os are interrupt and wake-up capable, have a programmable pullup and pulldown function and can generate an interrupt on a negative or positive edge (configurable). When configured as an output, pins can function as either push-pull or open-drain. Five GPIOs have high drive capabilities (marked in bold in Section 4). The SSIs are synchronous serial interfaces that are compatible with SPI, MICROWIRE, and Texas Instruments synchronous serial interfaces. The SSIs support both SPI master and slave up to 4 MHz. The UART implements a universal asynchronous receiver/transmitter function. It supports flexible baudrate generation up to a maximum of 3 Mbps and is compatible with the Bluetooth HCI specifications. Timer 0 is a general-purpose timer module (GPTM), which provides two 16-bit timers. The GPTM can be configured to operate as a single 32-bit timer, dual 16-bit timers or as a PWM module. Timer 1, Timer 2, and Timer 3 are also GPTMs. Each of these timers is functionally equivalent to Timer 0. In addition to these four timers, the RF core has its own timer to handle timing for RF protocols; the RF timer can be synchronized to the RTC. The I2C interface is used to communicate with devices compatible with the I2C standard. The I2C interface is capable of 100 kHz and 400 kHz operation, and can serve as both I2C master and I2C slave. The TRNG module provides a true, nondeterministic noise source for the purpose of generating keys, initialization vectors (IVs), and other random number requirements. The TRNG is built on 24 ring oscillators that create unpredictable output to feed a complex nonlinear combinatorial circuit. The watchdog timer is used to regain control if the system fails due to a software error after an external device fails to respond as expected. The watchdog timer can generate an interrupt or a reset when a predefined time-out value is reached. The device includes a direct memory access (µDMA) controller. The µDMA controller provides a way to offload data transfer tasks from the CM3 CPU, allowing for more efficient use of the processor and the available bus bandwidth. The µDMA controller can perform transfer between memory and peripherals. The µDMA controller has dedicated channels for each supported on-chip module and can be programmed to automatically perform transfers between peripherals and memory as the peripheral is ready to transfer more data. Some features of the µDMA controller include the following (this is not an exhaustive list): • Highly flexible and configurable channel operation of up to 32 channels • Transfer modes: Memory-to-memory, memory-to-peripheral, peripheral-to-memory, and peripheral-toperipheral • Data sizes of 8, 16, and 32 bits Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 29 CC2640 SWRS176 – FEBRUARY 2015 www.ti.com The AON domain contains circuitry that is always enabled, except for in Shutdown (where the digital supply is off). This circuitry includes the following: • The RTC can be used to wake the device from any state where it is active. The RTC contains three compare and one capture registers. With software support, the RTC can be used for clock and calendar operation. The RTC is clocked from the 32 kHz RC oscillator or crystal. The RTC can also be compensated to tick at the correct frequency even when the internal 32 kHz RC oscillator is used instead of a crystal. • The battery monitor and temperature sensor are accessible by software and give a battery status indication as well as a coarse temperature measure. 6.10 System Architecture Depending on the product configuration, CC26xx can function either as a Wireless Network Processor (WNP – an IC running the wireless protocol stack, with the application running on a separate MCU), or as a System-on-Chip (SoC), with the application and protocol stack running on the ARM CM3 core inside the device. In the first case, the external host MCU communicates with the device using SPI or UART. In the second case, the application must be written according to the application framework supplied with the wireless protocol stack. 30 Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 7 Application Circuit NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI's customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. Few external components are required for the operation of the CC2640 device. Figure 7-1 shows a typical application circuit. For a complete reference design, see the product folder on www.ti.com. Red = Not necessary if internal bias is used 6.8 pF Antenna (50 Ohm) Pin 3 (RXTX) 2.4 nH 1 pF Pin 2 (RF N) To VDDR pins 10uF Optional inductor. Only needed for 10uH DCDC operation 2 nH 6.2-6.8 nH Pin 1 (RF P) 2.4-2.7 nH Differential operation 2 nH 12 pF 1 pF 1 pF Antenna (50 Ohm) Red = Not necessary if internal bias is used CC26xx DCDC_SW VDDS_DCDC (GND exposed die attached pad ) Pin 2 (RF N) Pin 3/4 (RXTX) Pin 1 (RF P) input decoupling 10uF ± 22uF 15 nH Pin 1 (RF P) 2 nH Pin 2 (RF N) Single ended operation 12 pF 1.2 pF 1.2 pF Antenna (50 Ohm) Red = Not necessary if internal bias is used Pin 3 (RXTX) 15 nH 24MHz XTAL (Load caps on chip) 2 nH Pin 2 (RF N) 12 pF 1.2 pF Single ended operation with 2 antennas 1.2 pF Antenna (50 Ohm) 15 nH Pin 1 (RF P) 2 nH 12 pF 1.2 pF 1.2 pF Figure 7-1. CC2640 Application Circuit Application Circuit Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 31 CC2640 SWRS176 – FEBRUARY 2015 www.ti.com Internal DCDC regulator 10uF Internal LDO regulator To all VDDR Pins To all VDDR Pins 10uF External regulator Ext regulator 1.7V ± 1.95V to all VDDR- and VDDS Pins except VDDS_DCDC 2.2uF 10uH CC26xx DCDC_SW Pin VDDS_DCDC Pin (GND exposed die attached pad ) CC26xx Pin 3/4 (RXTX) Pin 2 (RF N) DCDC_SW Pin VDDS_DCDC Pin NC (GND exposed die attached pad ) Pin 1 (RF P) VDDS_DCDC input decoupling 10uF ± 22uF 1.8V ± 3.8V to all VDDS Pins CC26xx DCDC_SW Pin Pin 3/4 (RXTX) Pin 2 (RF N) VDDS_DCDC Pin (GND exposed die attached pad ) Pin 1 (RF P) Pin 3/4 (RXTX) Pin 2 (RF N) Pin 1 (RF P) VDDS_DCDC input decoupling 10uF ± 22uF 24MHz XTAL (Load caps on chip) 1.8V ± 3.8V Supply voltage 24MHz XTAL (Load caps on chip) 24MHz XTAL (Load caps on chip) To all VDDS Pins Figure 7-2. Supply Voltage Configurations Power supply decoupling capacitors are not shown. Digital I/Os not included. Pin positions, and component values are not final. For detailed overview of power supply decoupling and wiring, see the TI reference designs and the CC26xx technical reference manual (Section 8.2). Figure 7-1 shows that the RF front end can be used both differentially and single-endedly with the option of having internal or external biasing. These options allow for various trade-offs between cost, boardspace, and RF performance. Differential operation with external bias gives the best performance while single-ended operation with internal bias gives the least amount of external components and the lowest power consumption. 32 Application Circuit Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 8 Device and Documentation Support 8.1 8.1.1 Device Support Development Support TI offers an extensive line of development tools, including tools to evaluate the performance of the processors, generate code, develop algorithm implementations, and fully integrate and debug software and hardware modules. The following products support development of the CC2640 device applications: Software Tools: SmartRF™ Studio 7: SmartRF Studio is a PC application that helps designers of radio systems to easily evaluate the RF-IC at an early stage in the design process. • Test functions for sending and receiving radio packets, continuous wave transmit and receive • Evaluate RF performance on custom boards by wiring it to a supported evaluation board or debugger • Can also be used without any hardware, but then only to generate, edit and export radio configuration settings • Can be used in combination with several development kits for Texas Instruments’ CCxxxx RF-ICs Sensor Controller Studio: Sensor Controller Studio provides a development environment for the CC26xx Sensor Controller. The Sensor Controller is a proprietary, power-optimized CPU in the CC26xx, which can perform simple background tasks autonomously and independent of the System CPU state. • Allows for Sensor Controller task algorithms to be implemented using a C-like programming language • Outputs a Sensor Controller Interface driver, which incorporates the generated Sensor Controller machine code and associated definitions • Allows for rapid development by using the integrated Sensor Controller task testing and debugging functionality. This allows for live visualization of sensor data and algorithm verification. IDEs and Compilers: Code Composer Studio: • Integrated development environment with project management tools and editor • Code Composer Studio (CCS) 6.1 and later has built-in support for the CC26xx device family • Best support for XDS debuggers; XDS100v3, XDS110 and XDS200 • High integration with TI-RTOS with support for TI-RTOS Object View IAR Embedded Workbench for ARM • Integrated development environment with project management tools and editor • IAR EWARM 7.30.3 and later has built-in support for the CC26xx device family • Broad debugger support, supporting XDS100v3, XDS200, IAR I-Jet and Segger J-Link • Integrated development environment with project management tools and editor • RTOS plugin available for TI-RTOS For a complete listing of development-support tools for the CC2640 platform, visit the Texas Instruments website at www.ti.com. For information on pricing and availability, contact the nearest TI field sales office or authorized distributor. Device and Documentation Support Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 33 CC2640 SWRS176 – FEBRUARY 2015 8.1.2 www.ti.com Device Nomenclature To designate the stages in the product development cycle, TI assigns prefixes to all part numbers and/or date-code. Each device has one of three prefixes/identifications: X, P, or null (no prefix) (for example, CC2640 is in production; therefore, no prefix/identification is assigned). Device development evolutionary flow: X Experimental device that is not necessarily representative of the final device's electrical specifications and may not use production assembly flow. P Prototype device that is not necessarily the final silicon die and may not necessarily meet final electrical specifications. null Production version of the silicon die that is fully qualified. Production devices have been characterized fully, and the quality and reliability of the device have been demonstrated fully. TI's standard warranty applies. Predictions show that prototype devices (X or P) have a greater failure rate than the standard production devices. Texas Instruments recommends that these devices not be used in any production system because their expected end-use failure rate still is undefined. Only qualified production devices are to be used. TI device nomenclature also includes a suffix with the device family name. This suffix indicates the package type (for example, RSM). For orderable part numbers of CC2640 devices in the RSM, RHB or RGZ package types, see the Package Option Addendum of this document, the TI website (www.ti.com), or contact your TI sales representative. 34 Device and Documentation Support Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com 8.2 SWRS176 – FEBRUARY 2015 Documentation Support The following documents describe the CC2640. Copies of these documents are available on the Internet at www.ti.com. SWCU117 Technical Reference Manual. Texas Instruments CC26xx Family of Products SWRS058 Silicon Errata. Texas Instruments CC26xx™ Family of Products 8.2.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. TI Embedded Processors Wiki Texas Instruments Embedded Processors Wiki. Established to help developers get started with Embedded Processors from Texas Instruments and to foster innovation and growth of general knowledge about the hardware and software surrounding these devices. 8.3 Additional Information Texas Instruments offers a wide selection of cost-effective, low-power RF solutions for proprietary and standard-based wireless applications for use in industrial and consumer applications. The selection includes RF transceivers, RF transmitters, RF front ends, and Systems-on-Chips as well as various software solutions for the sub-1-GHz and 2.4-GHz frequency bands. In addition, Texas Instruments provides a large selection of support collateral such as development tools, technical documentation, reference designs, application expertise, customer support, third-party and university programs. The Low-Power RF E2E Online Community provides technical support forums, videos and blogs, and the chance to interact with engineers from all over the world. With a broad selection of product solutions, end-application possibilities, and a range of technical support, Texas Instruments offers the broadest low-power RF portfolio. 8.3.1 Texas Instruments Low-Power RF Website Texas Instruments' Low-Power RF website has all the latest products, application and design notes, FAQ section, news and events updates. Go to www.ti.com/lprf. 8.3.2 Low-Power RF Online Community • • • Forums, videos, and blogs RF design help E2E interaction Join at: www.ti.com/lprf-forum. Device and Documentation Support Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 35 CC2640 SWRS176 – FEBRUARY 2015 8.3.3 www.ti.com Texas Instruments Low-Power RF Developer Network Texas Instruments has launched an extensive network of low-power RF development partners to help customers speed up their application development. The network consists of recommended companies, RF consultants, and independent design houses that provide a series of hardware module products and design services, including: • RF circuit, low-power RF, and ZigBee design services • Low-power RF and ZigBee module solutions and development tools • RF certification services and RF circuit manufacturing For help with modules, engineering services or development tools: Search the Low-Power RF Developer Network to find a suitable partner. www.ti.com/lprfnetwork 8.3.4 Low-Power RF eNewsletter The Low-Power RF eNewsletter is up-to-date on new products, news releases, developers’ news, and other news and events associated with low-power RF products from TI. The Low-Power RF eNewsletter articles include links to get more online information. Sign up at: www.ti.com/lprfnewsletter 8.4 Trademarks IAR Embedded Workbench is a registered trademark of IAR Systems AB. SimpleLink, SmartRF, Code Composer Studio, CC26xx, E2E are trademarks of Texas Instruments. ARM7 is a trademark of ARM Limited. ARM, Cortex are registered trademarks of ARM Limited (or its subsidiaries). ARM Thumb is a registered trademark of ARM Limited. Bluetooth is a registered trademark of Bluetooth SIG, Inc. CoreMark is a registered trademark of Embedded Microprocessor Benchmark Consortium. IEEE Std 1241 is a trademark of Institute of Electrical and Electronics Engineers, Incorporated. ZigBee is a registered trademark of ZigBee Alliance, Inc. 8.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 8.6 Export Control Notice Recipient agrees to not knowingly export or re-export, directly or indirectly, any product or technical data (as defined by the U.S., EU, and other Export Administration Regulations) including software, or any controlled product restricted by other applicable national regulations, received from Disclosing party under this Agreement, or any direct product of such technology, to any destination to which such export or reexport is restricted or prohibited by U.S. or other applicable laws, without obtaining prior authorization from U.S. Department of Commerce and other competent Government authorities to the extent required by those laws. 8.7 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms and definitions. 36 Device and Documentation Support Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC2640 CC2640 www.ti.com SWRS176 – FEBRUARY 2015 9 Mechanical Packaging and Orderable Information 9.1 Packaging Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Copyright © 2015, Texas Instruments Incorporated Mechanical Packaging and Orderable Information Submit Documentation Feedback Product Folder Links: CC2640 37 PACKAGE OPTION ADDENDUM www.ti.com 5-Sep-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) CC2640F128RGZR ACTIVE VQFN RGZ 48 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC2640 F128 CC2640F128RGZT ACTIVE VQFN RGZ 48 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC2640 F128 CC2640F128RHBR ACTIVE VQFN RHB 32 3000 Green (RoHS & no Sb/Br) CU NIPDAU | Call TI Level-3-260C-168 HR -40 to 85 CC2640 F128 CC2640F128RHBT ACTIVE VQFN RHB 32 250 Green (RoHS & no Sb/Br) CU NIPDAU | Call TI Level-3-260C-168 HR -40 to 85 CC2640 F128 CC2640F128RSMR ACTIVE VQFN RSM 32 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC2640 F128 CC2640F128RSMT ACTIVE VQFN RSM 32 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC2640 F128 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 5-Sep-2015 (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 3-Aug-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing CC2640F128RGZR VQFN RGZ 48 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 2500 330.0 16.4 7.3 7.3 1.1 12.0 16.0 Q2 CC2640F128RGZT VQFN RGZ 48 250 180.0 16.4 7.3 7.3 1.1 12.0 16.0 Q2 CC2640F128RHBR VQFN RHB 32 3000 330.0 12.4 5.3 5.3 1.1 8.0 12.0 Q2 CC2640F128RHBT VQFN RHB 32 250 180.0 12.4 5.3 5.3 1.1 8.0 12.0 Q2 CC2640F128RSMR VQFN RSM 32 3000 330.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2 CC2640F128RSMT VQFN RSM 32 250 180.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 3-Aug-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CC2640F128RGZR VQFN RGZ 48 2500 367.0 367.0 38.0 CC2640F128RGZT VQFN RGZ 48 250 210.0 185.0 35.0 CC2640F128RHBR VQFN RHB 32 3000 367.0 367.0 35.0 CC2640F128RHBT VQFN RHB 32 250 210.0 185.0 35.0 CC2640F128RSMR VQFN RSM 32 3000 367.0 367.0 35.0 CC2640F128RSMT VQFN RSM 32 250 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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