SavantIC Semiconductor Product Specification BD242/A/B/C Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD241/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD242 VCBO VCEO VEBO Collector-base voltage Collector-emitter voltage Emitter-base voltage BD242A VALUE -55 Open emitter -70 BD242B -90 BD242C -115 BD242 -45 BD242A UNIT Open base -60 BD242B -80 BD242C -100 Open collector V V -5 V IC Collector current -3 A ICM Collector current-peak -5 A IB Base current -1 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BD242/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat PARAMETER Collector-emitter sustaining voltage CONDITIONS MIN BD242 -45 BD242A -60 TYP. MAX IC=30mA; IB=0 UNIT V BD242B -80 BD242C -100 Collector-emitter saturation voltage IC=-3A;IB=-0.6 A -1.2 V VBE Base-emitter on voltage IC=-3A ; VCE=-4V -1.8 V ICEO Collector cut-off current -0.3 mA -0.2 mA -1 mA ICES BD242/A VCE=-30V; IB=0 BD242B/C VCE=-60V; IB=0 BD242 VCE=-45V; VBE=0 BD242A VCE=-60V; VBE=0 BD242B VCE=-80V; VBE=0 BD242C VCE=-100V; VBE=0 Collector cut-off current IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-4V 25 hFE-2 DC current gain IC=-3A ; VCE=-4V 10 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BD242/A/B/C