TI1 M38510/11904BPX Low offset, low drift jfet input operational amplifier Datasheet

Not Recommended For New Designs
LF411JAN
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SNOSAQ4A – OCTOBER 2005 – REVISED MARCH 2013
LF411JAN Low Offset, Low Drift JFET Input Operational Amplifier
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FEATURES
DESCRIPTION
•
•
•
•
•
•
•
•
•
This device is a low cost, high speed, JFET input
operational amplifier with very low input offset voltage
and ensured input offset voltage drift. It requires low
supply current yet maintains a large gain bandwidth
product and fast slew rate. In addition, well matched
high voltage JFET input devices provide very low
input bias and offset currents. The LF411 is pin
compatible with the standard LM741 allowing
designers to immediately upgrade the overall
performance of existing designs.
1
23
•
•
Internally Trimmed Offset Voltage: 0.5 mV(Typ)
Input Offset Voltage Drift: 30 μV/°C
Low Input Bias Current: 50 pA
Low Input Noise Current: 0.01 pA/√Hz
Wide Gain Bandwidth: 3 MHz Typ.
High Slew Rate: 7V/μs (Min.)
Low Supply Current: 1.8 mA
High Input Impedance: 1012Ω
Low Total Harmonic Distortion: AV = 10,
RL = 10KΩ, VO = 20VP-P, BW = 20Hz - 20kHz
<0.02%
Low 1/f Noise Corner: 50 Hz
Fast Settling Time to 0.01%: 1.5 μs
Connection Diagram
This amplifier may be used in applications such as
high speed integrators, fast D/A converters, sample
and hold circuits and many other circuits requiring low
input offset voltage and drift, low input bias current,
high input impedance, high slew rate and wide
bandwidth.
Typical Connection
Figure 1. 8LD Ceramic Dual-in Line Package
See Package Number NAB0008A (Top View)
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
BI-FET II is a trademark of dcl_owner.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2013, Texas Instruments Incorporated
LF411JAN
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Simplified Schematic
Detailed Schematic
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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Absolute Maximum Ratings (1)
Supply Voltage
±18V
Differential Input Voltage
±30V
Input Voltage Range (2)
±15V
Output Short Circuit Duration
Continuous
Power Dissipation (3) (4)
400mW
TJmax
175°C
θJA
Thermal Resistance
Still Air
162°C/W
400LF/Min Air Flow
65°C/W
θJC
20°C/W
Operating Temperature Range
−55°C ≤ TA ≤ 125°C
Storage Temperature Range
−65°C ≤ TA ≤ 150°C
Lead Temperature (Soldering, 10 seconds)
300°C
Package Weight (Typical)
TBD
ESD Tolerance (5)
(1)
(2)
(3)
(4)
(5)
750V
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The specified specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the
part to operate outside specified limits.
Human body model, 100pF discharged through 1.5KΩ.
Quality Conformance Inspection
Table 1. Mil-Std-883, Method 5005 - Group A
Subgroup
Description
Temp °C
1
Static tests at
25
2
Static tests at
125
3
Static tests at
-55
4
Dynamic tests at
25
5
Dynamic tests at
125
6
Dynamic tests at
-55
7
Functional tests at
25
8A
Functional tests at
125
8B
Functional tests at
-55
9
Switching tests at
25
10
Switching tests at
125
11
Switching tests at
-55
12
Settling time at
25
13
Settling time at
125
14
Settling time at
-55
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Electrical Characteristics DC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
DC: VCC = ±15V, VCM = 0V
Symbol
Parameter
VIO
Conditions
Notes
Max
Unit
+VCC = 26V, -VCC = -4V,
VCM = -11V
-5.0
5.0
mV
1
-7.0
7.0
mV
2, 3
+VCC = 4V, -VCC = -26V,
VCM = 11V
-5.0
5.0
mV
1
-7.0
7.0
mV
2, 3
-5.0
5.0
mV
1
-7.0
7.0
mV
2, 3
-5.0
5.0
mV
1
-7.0
7.0
mV
2, 3
-0.4
0.2
nA
1
-10
50
nA
2
-0.2
0.2
nA
1
-10
50
nA
2
-0.2
1.2
nA
1
-10
70
nA
2
-0.1
0.1
nA
1
-20
20
nA
2
Input Offset Voltage
±VCC = ±5V
±IIB
+VCC = 26V, -VCC = -4V,
VCM = -11V, t ≤ 25mS
Input Bias Current
t ≤ 25mS
+VCC = 4V, -VCC = -26V,
VCM = 11V, t ≤ 25mS
IIO
+PSRR
Input Offset Current
t ≤ 25mS
Power Supply Rejection Ratio
+VCC = 10V to 20V, -VCC = -15V
80
dB
1, 2, 3
+VCC = 15V, -VCC = -10V to -20V
80
dB
1, 2, 3
dB
1, 2, 3
mV
1, 2, 3
mV
1, 2, 3
-PSRR
Power Supply Rejection Ratio
CMR
Input Voltage Common Mode
Rejection
VIO
Adj+
Adjustment for Input Offset
Voltage
VIO
Adj-
Adjustment for Input Offset
Voltage
VCM = -11V to +11V
-8.0
Output Short Circuit Current
t ≤ 25mS
IOS-
Output Short Circuit Current
t ≤ 25mS
+VOP
-VOP
+AVS
-AVS
(1)
(2)
4
-80
Supply Current
ΔVIO / ΔT
AVS
80
8.0
IOS+
ICC
Subgroups
Min
Input Offset Voltage
Output Voltage Swing
Output Voltage Swing
mA
1, 2, 3
80
mA
1, 2, 3
3.5
mA
1, 2
4.0
mA
3
2
25°C ≤ TA ≤ +125°C
See
(1)
-30
30
µV/°C
-55°C ≤ TA ≤ 25°C
See (1)
-30
30
µV/°C
3
V
4, 5, 6
RL = 10KΩ
12
RL = 2KΩ
10
RL = 10KΩ
RL = 2KΩ
V
4, 5, 6
-12
V
4, 5, 6
-10
V
4, 5, 6
(2)
50
K
4
See (2)
25
K
5, 6
Open Loop Voltage Gain
RL = 2KΩ,
VO = 0 to 10V
See
Open Loop Voltage Gain
RL = 2KΩ,
VO = 0 to -10V
See (2)
50
K
4
See (2)
25
K
5, 6
Open Loop Voltage Gain
RL = 10KΩ, VO = ±2V,
±VCC = ±5V
See (2)
20
K
4, 5, 6
Calculated parameter. For calculation use VIO test at ±VCC = ±15V
Datalog in K = V/mV.
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Electrical Characteristics AC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
AC: VCC = ±15V, VCM = 0V
Symbol
SR+
Parameter
Conditions
Subgroups
7
V/µS
8A, 8B
7.0
V/µS
7
5.0
V/µS
8A, 8B
200
nS
7, 8A, 8B
AV = 1, VI = 50mV,
CL = 100pF, RL = 2KΩ
40
%
7, 8A, 8B
Noise Broadband
BW of 10Hz to 15KHz
15
µVRMS
7
Noise Popcorn
BW of 10Hz to 15KHz,
RS = 100KΩ
80
µVPK
7
Settling Time
AV = 1
1,50
0
nS
12
Settling Time
AV = 1
1,50
0
nS
12
Min
Max
Unit
Subgroups
VI = +5V to -5V
TRTR
Transient Response Rise Time
AV = 1, VI = 50mV,
CL = 100pF, RL = 2KΩ
TROS
Transient Response Overshoot
NIBB
-tS
Unit
V/µS
Slew Rate
+tS
Max
5.0
VI = -5V to +5V
NIPC
Min
7.0
Slew Rate
SR-
Notes
Electrical Characteristics DC Drift Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
DC: VCC = ±15V, VCM = 0V
Delta Calculations performed at Group B, subgroup 5, Only
Symbol
Parameter
Conditions
Notes
VIO
Input Offset Voltage
-1.0
1.0
mV
1
±IIB
Input Bias Current
-0.1
0.1
nA
1
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Typical Performance Characteristics
6
Input Bias Current
Input Bias Current
Figure 2.
Figure 3.
Supply Current
Positive Common-Mode
Input Voltage Limit
Figure 4.
Figure 5.
Negative Common-Mode
Input Voltage Limit
Positive Current Limit
Figure 6.
Figure 7.
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Typical Performance Characteristics (continued)
Negative Current Limit
Output Voltage Swing
Figure 8.
Figure 9.
Output Voltage Swing
Gain Bandwidth
Figure 10.
Figure 11.
Bode Plot
Slew Rate
Figure 12.
Figure 13.
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Typical Performance Characteristics (continued)
8
Distortion vs Frequency
Undistorted Output
Voltage Swing
Figure 14.
Figure 15.
Open Loop Frequency
Response
Common-Mode Rejection Ratio
Figure 16.
Figure 17.
Power Supply
Rejection Ratio
Equivalent Input Noise Voltage
Figure 18.
Figure 19.
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Typical Performance Characteristics (continued)
Open Loop Voltage Gain
Output Impedance
Figure 20.
Figure 21.
Inverter Settling Time
Figure 22.
Pulse Response
RL=2 kΩ, CL10 pF
Figure 23. Small Signal Inverting
Figure 24. Small Signal Non-Inverting
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Pulse Response (continued)
Figure 25. Large Signal Inverting
Figure 26. Large Signal Non-Inverting
Figure 27. Current Limit (RL=100Ω)
10
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APPLICATION HINTS
The LF411JAN series of internally trimmed JFET input op amps ( BI-FET II™ ) provide very low input offset
voltage and ensured input offset voltage drift. These JFETs have large reverse breakdown voltages from gate to
source and drain eliminating the need for clamps across the inputs. Therefore, large differential input voltages
can easily be accommodated without a large increase in input current. The maximum differential input voltage is
independent of the supply voltages. However, neither of the input voltages should be allowed to exceed the
negative supply as this will cause large currents to flow which can result in a destroyed unit.
Exceeding the negative common-mode limit on either input will force the output to a high state, potentially
causing a reversal of phase to the output. Exceeding the negative common-mode limit on both inputs will force
the amplifier output to a high state. In neither case does a latch occur since raising the input back within the
common-mode range again puts the input stage and thus the amplifier in a normal operating mode.
Exceeding the positive common-mode limit on a single input will not change the phase of the output; however, if
both inputs exceed the limit, the output of the amplifier may be forced to a high state.
The amplifier will operate with a common-mode input voltage equal to the positive supply; however, the gain
bandwidth and slew rate may be decreased in this condition. When the negative common-mode voltage swings
to within 3V of the negative supply, an increase in input offset voltage may occur.
The LF411 is biased by a zener reference which allows normal circuit operation on ±4.5V power supplies. Supply
voltages less than these may result in lower gain bandwidth and slew rate.
The LF411 will drive a 2 kΩ load resistance to ±10V over the full temperature range. If the amplifier is forced to
drive heavier load currents, however, an increase in input offset voltage may occur on the negative voltage swing
and finally reach an active current limit on both positive and negative swings.
Precautions should be taken to ensure that the power supply for the integrated circuit never becomes reversed in
polarity or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through
the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed
unit.
As with most amplifiers, care should be taken with lead dress, component placement and supply decoupling in
order to ensure stability. For example, resistors from the output to an input should be placed with the body close
to the input to minimize “pick-up” and maximize the frequency of the feedback pole by minimizing the
capacitance from the input to ground.
A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and
capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole.
In many instances the frequency of this pole is much greater than the expected 3 dB frequency of the closed
loop gain and consequently there is negligible effect on stability margin. However, if the feedback pole is less
than approximately 6 times the expected 3 dB frequency, a lead capacitor should be placed from the output to
the input of the op amp. The value of the added capacitor should be such that the RC time constant of this
capacitor and the resistance it parallels is greater than or equal to the original feedback pole time constant.
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Typical Applications
Figure 28. High Speed Current Booster
PNP=2N2905
NPN=2N2219 unless noted
TO-5 heat sinks for Q6-Q7
Figure 29. 10-Bit Linear DAC with No VOS Adjust
where AN=1 if the AN digital input is high
AN=0 if the AN digital input is low
12
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Figure 30. Single Supply Analog Switch with Buffered Output
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Table 2. Revision History
14
Date
Released
Revision
Section
Originator
Changes
10/11/05
A
New Release to corporate format
L. Lytle
1 MDS data sheet was converted into the
corporate data sheet format. MDS MJLF411-X
Rev 0C1 will be archived.
3/27/2013
A
All Sections
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PACKAGE OPTION ADDENDUM
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17-Aug-2016
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
JL411BPA
LIFEBUY
CDIP
NAB
8
40
TBD
Call TI
Call TI
-55 to 125
JL411BPA Q
JM38510/
11904BPA ACO
11904BPA >T
JM38510/11904BPA
LIFEBUY
CDIP
NAB
8
40
TBD
Call TI
Call TI
-55 to 125
JL411BPA Q
JM38510/
11904BPA ACO
11904BPA >T
M38510/11904BPA
LIFEBUY
CDIP
NAB
8
40
TBD
Call TI
Call TI
-55 to 125
JL411BPA Q
JM38510/
11904BPA ACO
11904BPA >T
M38510/11904BPX
LIFEBUY
CDIP
NAB
8
40
TBD
Call TI
Call TI
-55 to 125
JL411BPA Q
JM38510/
11904BPA ACO
11904BPA >T
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
17-Aug-2016
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
MECHANICAL DATA
NAB0008A
J08A (Rev M)
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