AD ADL5353 2300 mhz to 2900 mhz balanced mixer Datasheet

2300 MHz to 2900 MHz Balanced Mixer,
LO Buffer and RF Balun
ADL5363
FEATURES
APPLICATIONS
Cellular base station receivers
Transmit observation receivers
Radio link downconverters
GENERAL DESCRIPTION
The ADL5363 uses a highly linear, doubly balanced passive
mixer core along with integrated RF and local oscillator (LO)
balancing circuitry to allow for single-ended operation. The
ADL5363 incorporates an RF balun to provide optimal
performance over a 2300 MHz to 2900 MHz input frequency
range. The balanced passive mixer arrangement provides good
LO-to-RF leakage, typically better than −30 dBm, and excellent
intermodulation performance. The balanced mixer core also
provides extremely high input linearity, allowing the device to
be used in demanding cellular applications where in-band
blocking signals might otherwise result in the degradation of
dynamic performance.
FUNCTIONAL BLOCK DIAGRAM
VCMI
IFOP
IFON
PWDN
COMM
20
19
18
17
16
ADL5363
VPMX 1
15
LOI2
RFIN 2
14
VPSW
RFCT 3
13
VGS1
COMM 4
12
VGS0
COMM 5
11
LOI1
BIAS
GENERATOR
6
7
8
9
10
VLO3
LGM3
VLO2
LOSW
NC
09914-001
RF frequency range of 2300 MHz to 2900 MHz
IF frequency range of dc to 450 MHz
Power conversion loss: 7.7 dB
SSB noise figure of 7.6 dB
Input IP3 of 31 dBm
Typical LO drive of 0 dBm
Single-ended, 50 Ω RF and LO input ports
High isolation SPDT LO input switch
Single-supply operation: 3.3 V to 5 V
Exposed pad, 5 mm × 5 mm 20-lead LFCSP
1500 V HBM/1250 V FICDM ESD performance
NC = NO CONNECT
Figure 1.
The ADL5363 provides two switched LO paths that can be used
in TDD applications where it is desirable to rapidly switch between
two local oscillators. LO current can be externally set using a
resistor to minimize dc current commensurate with the desired
level of performance. For low voltage applications, the ADL5363 is
capable of operation at voltages down to 3.3 V with substantially
reduced current. For low voltage operation, an additional logic
pin is provided to power down (<200 μA) the circuit when desired.
The ADL5363 is fabricated using a BiCMOS high performance
IC process. The device is available in a 5 mm × 5 mm, 20-lead
LFCSP and operates over a −40°C to +85°C temperature range.
An evaluation board is also available.
Table 1. Passive Mixers
RF Frequency (MHz)
500 to 1700
1200 to 2500
2300 to 2900
Single
Mixer
ADL5367
ADL5365
ADL5363
Single Mixer
and IF Amp
ADL5357
ADL5355
ADL5353
Dual Mixer
and IF Amp
ADL5358
ADL5356
ADL5354
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2011 Analog Devices, Inc. All rights reserved.
ADL5363
TABLE OF CONTENTS
Features .............................................................................................. 1
Upconversion.............................................................................. 15
Applications....................................................................................... 1
Spurious Performance ............................................................... 16
General Description ......................................................................... 1
Circuit Description......................................................................... 17
Functional Block Diagram .............................................................. 1
RF Subsystem.............................................................................. 17
Revision History ............................................................................... 2
LO Subsystem ............................................................................. 18
Specifications..................................................................................... 3
Applications Information .............................................................. 19
5 V Performance........................................................................... 4
Basic Connections...................................................................... 19
3.3 V Performance........................................................................ 4
IF Port .......................................................................................... 19
Absolute Maximum Ratings............................................................ 5
Bias Resistor Selection ............................................................... 19
ESD Caution.................................................................................. 5
Mixer VGS Control DAC .......................................................... 19
Pin Configuration and Function Descriptions............................. 6
Evaluation Board ............................................................................ 20
Typical Performance Characteristics ............................................. 7
Outline Dimensions ....................................................................... 23
5 V Performance........................................................................... 7
Ordering Guide .......................................................................... 23
3.3 V Performance...................................................................... 14
REVISION HISTORY
7/11—Revision 0: Initial Version
Rev. 0 | Page 2 of 24
ADL5363
SPECIFICATIONS
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, ZO = 50 Ω, unless otherwise noted.
Table 2.
Parameter
RF INPUT INTERFACE
Return Loss
Input Impedance
RF Frequency Range
OUTPUT INTERFACE
Output Impedance
IF Frequency Range
DC Bias Voltage 1
LO INTERFACE
LO Power
Return Loss
Input Impedance
LO Frequency Range
POWER-DOWN (PWDN) INTERFACE 2
PWDN Threshold
Logic 0 Level
Logic 1 Level
PWDN Response Time
PWDN Input Bias Current
1
2
Test Conditions/Comments
Min
Tunable to >20 dB over a limited bandwidth
Typ
Unit
2900
dB
Ω
MHz
450
5.5
Ω||pF
MHz
V
16
50
2300
Differential impedance, f = 200 MHz
Externally generated
Max
33||-0.3
dc
3.3
−6
5.0
0
15
50
2330
+10
3350
1.0
0.4
1.4
Device enabled, IF output to 90% of its final level
Device disabled, supply current <5 mA
Device enabled
Device disabled
Apply the supply voltage from the external circuit through the choke inductors.
The PWDN function is intended for use with VS ≤ 3.6 V only.
Rev. 0 | Page 3 of 24
160
220
0.0
70
dBm
dB
Ω
MHz
V
V
V
ns
ns
μA
μA
ADL5363
5 V PERFORMANCE
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
Table 3.
Parameter
DYNAMIC PERFORMANCE
Power Conversion Loss
SSB Noise Figure
Input Third-Order Intercept (IIP3)
Input Second-Order Intercept (IIP2)
Input 1 dB Compression Point (IP1dB) 1
LO-to-IF Leakage
LO-to-RF Leakage
RF-to-IF Isolation
IF/2 Spurious
IF/3 Spurious
POWER SUPPLY
Positive Supply Voltage
Quiescent Current
1
Test Conditions/Comments
Min
Including 1:1 IF port transformer and PCB loss
fRF1 = 2534.5 MHz, fRF2 = 2535.5 MHz, fLO = 2738 MHz,
each RF tone at 0 dBm
fRF1 = 2535 MHz, fRF2 = 2585 MHz, fLO = 2738 MHz,
each RF tone at 0 dBm
Exceeding 20 dBm RF power results in damage to the device
Unfiltered IF output
−10 dBm input power
−10 dBm input power
4.5
VS = 5 V
Typ
Max
Unit
7.7
7.6
31
dB
dB
dBm
62
dBm
25
−22
−32
−44
−61
−70
dBm
dBm
dBm
dBc
dBc
dBc
5
100
5.5
V
mA
Exceeding 20 dBm RF power results in damage to the device.
3.3 V PERFORMANCE
VS = 3.3 V, IS = 60 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, R9 = 226 Ω, VGS0 = VGS1 = 0 V, and ZO = 50 Ω,
unless otherwise noted.
Table 4.
Parameter
DYNAMIC PERFORMANCE
Power Conversion Loss
SSB Noise Figure
Input Third-Order Intercept (IIP3)
Input Second-Order Intercept (IIP2)
POWER SUPPLY
Positive Supply Voltage
Quiescent Current
Test Conditions/Comments
Including 1:1 IF port transformer and PCB loss
fRF1 = 2534.5 MHz, fRF2 = 2535.5 MHz, fLO = 2738 MHz,
each RF tone at 0 dBm
fRF1 = 2535 MHz, fRF2 = 2585 MHz, fLO = 2738 MHz,
each RF tone at 0 dBm
VS = 5 V
Rev. 0 | Page 4 of 24
Min
Typ
Max
Unit
7.4
6.8
26
dB
dB
dBm
56
dBm
3.3
60
V
mA
ADL5363
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 5.
Parameter
Supply Voltage, VS
RF Input Level
LO Input Level
IFOP, IFON Bias Voltage
VGS0, VGS1, LOSW, PWDN
Internal Power Dissipation
Thermal Resistance, θJA
Temperature
Maximum Junction Temperature
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering, 60 sec)
Rating
5.5 V
20 dBm
13 dBm
6.0 V
5.5 V
0.5 W
25°C/W
ESD CAUTION
150°C
−40°C to +85°C
−65°C to +150°C
260°C
Rev. 0 | Page 5 of 24
ADL5363
20
19
18
17
16
VCMI
IFOP
IFON
PWDN
COMM
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
2
3
4
5
PIN 1
INDICATOR
ADL5363
TOP VIEW
(Not to Scale)
15
14
13
12
11
LOI2
VPSW
VGS1
VGS0
LOI1
NOTES
1. NC = NO CONNECT. DO NOT CONNECT
TO THIS PIN.
2. EXPOSED PAD. MUST BE SOLDERED
TO GROUND.
09914-002
VLO3
LGM3
VLO2
LOSW
NC
6
7
8
9
10
VPMX
RFIN
RFCT
COMM
COMM
Figure 2. Pin Configuration
Table 6. Pin Function Descriptions
Pin No.
1
2
3
4, 5,16
6, 8
7
9
10
11, 15
12, 13
14
17
18, 19
20
Mnemonic
VPMX
RFIN
RFCT
COMM
VLO3, VLO2
LGM3
LOSW
NC
LOI1, LOI2
VGS0, VGS1
VPSW
PWDN
IFON, IFOP
VCMI
EPAD (EP)
Description
Positive Supply Voltage.
RF Input. Must be ac-coupled.
RF Balun Center Tap (AC Ground).
Device Common (DC Ground).
Positive Supply Voltages for LO Amplifier.
LO Amplifier Bias Control.
LO Switch. LOI1 selected for 0 V, and LOI2 selected for 3 V.
No Connect.
LO Inputs. Must be ac-coupled.
Mixer Gate Bias Controls. 3 V logic. Ground these pins for nominal setting.
Positive Supply Voltage for LO Switch.
Power Down. Connect this pin to ground for normal operation and connect this pin to 3.0 V for disable mode.
Differential IF Outputs.
No Connect. This pin can be grounded.
Exposed pad. Must be soldered to ground.
Rev. 0 | Page 6 of 24
ADL5363
TYPICAL PERFORMANCE CHARACTERISTICS
5 V PERFORMANCE
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
105
90
104
80
75
101
100
99
TA = +85°C
TA = +85°C
70
TA = +25°C
65
60
98
55
97
50
96
45
95
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
40
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
RF FREQUENCY (GHz)
TA = –40°C
RF FREQUENCY (GHz)
Figure 3. Supply Current vs. RF Frequency
09914-006
TA = +25°C
INPUT IP2 (dBm)
102
85
TA = –40°C
09914-003
SUPPLY CURRENT (mA)
103
Figure 6. Input IP2 vs. RF Frequency
11
10.0
9.5
9.0
SSB NOISE FIGURE (dB)
CONVERSION LOSS (dB)
10
9
TA = +85°C
8
7
TA = +25°C
TA = –40°C
8.5
8.0
TA = +25°C
TA = +85°C
7.5
7.0
TA = –40°C
6.5
6.0
6
RF FREQUENCY (GHz)
40
38
36
TA = –40°C
30
TA = +25°C
TA = +85°C
26
24
22
20
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
RF FREQUENCY (GHz)
09914-005
INPUT IP3 (dBm)
34
28
RF FREQUENCY (GHz)
Figure 7. SSB Noise Figure vs. RF Frequency
Figure 4. Power Conversion Loss vs. RF Frequency
32
5.0
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
Figure 5. Input IP3 vs. RF Frequency
Rev. 0 | Page 7 of 24
09914-007
5
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
09914-004
5.5
ADL5363
74
130
71
120
68
5.25V
110
5.00V
100
4.75V
90
65
4.75V
59
80
56
70
53
60
–40 –30 –20 –10
0
10
20
30
40
50
60
70
80
TEMPERATURE (°C)
0
10
20
30
40
50
60
70
80
TEMPERATURE (°C)
Figure 11. Input IP2 vs. Temperature
9.1
10.0
4.75V
5.00V
5.25V
8.8
4.75V
5.00V
5.25V
9.5
9.0
8.2
7.9
7.6
7.3
8.5
8.0
7.5
7.0
6.5
6.0
6.7
5.5
6.4
–40 –30 –20 –10
0
10
20
30
40
50
60
70
80
TEMPERATURE (°C)
09914-009
7.0
4.75V
5.00V
5.25V
37
35
33
31
29
0
10
20
30
40
50
TEMPERATURE (°C)
60
70
80
09914-010
27
25
–40 –30 –20 –10
0
10
20
30
40
50
60
TEMPERATURE (°C)
Figure 12. SSB Noise Figure vs. Temperature
Figure 9. Power Conversion Loss vs. Temperature
39
5.0
–40 –30 –20 –10
Figure 10. Input IP3 vs. Temperature
Rev. 0 | Page 8 of 24
70
80
09914-012
SSB NOISE FIGURE (dB)
8.5
CONVERSION LOSS (dB)
5.00V
50
–40 –30 –20 –10
Figure 8. Supply Current vs. Temperature
INPUT IP3 (dBm)
5.25V
62
09914-011
INPUT IP2 (dBm)
140
09914-008
SUPPLY CURRENT (mA)
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
ADL5363
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
120
100
90
110
105
INPUT IP2 (dBm)
TA = –40°C
100
TA = +85°C
TA = +25°C
95
80
TA = +85°C
70
TA = +25°C
60
90
50
80
130
180
230
280
330
380
430
IF FREQUENCY (MHz)
40
30
09914-013
80
30
TA = –40°C
80
330
380
430
380
430
9.5
TA = +85°C
SSB NOISE FIGURE (dB)
CONVERSION LOSS (dB)
280
10.0
8.2
8.0
TA = +25°C
7.8
7.6
TA = –40°C
7.4
7.2
9.0
8.5
8.0
7.5
7.0
80
130
180
230
280
330
380
430
09914-014
6.5
IF FREQUENCY (MHz)
Figure 14. Power Conversion Loss vs. IF Frequency
38
35
TA = –40°C
32
29
TA = +25°C
TA = +85°C
26
130
180
230
280
330
IF FREQUENCY (MHz)
380
430
09914-015
23
80
6.0
30
80
130
180
230
280
330
IF FREQUENCY (MHz)
Figure 17. SSB Noise Figure vs. IF Frequency
41
INPUT IP3 (dBm)
230
Figure 16. Input IP2 vs. IF Frequency
8.4
20
30
180
IF FREQUENCY (MHz)
Figure 13. Supply Current vs. IF Frequency
7.0
30
130
09914-016
85
Figure 15. Input IP3 vs. IF Frequency
Rev. 0 | Page 9 of 24
09914-017
SUPPLY CURRENT (mA)
115
ADL5363
12
–30
11
–35
–40
10
IF/2 SPURIOUS (dBc)
9
TA = +85°C
8
7
TA = +25°C
TA = –40°C
6
–50
–55
TA = +25°C
TA = –40°C
–2
0
2
4
6
8
10
–75
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
09914-018
–4
RF FREQUENCY (GHz)
Figure 21. IF/2 Spurious vs. RF Frequency
Figure 18. Power Conversion Loss vs. LO Power
36
–20
34
–30
32
IF/3 SPURIOUS (dBc)
TA = –40°C
30
TA = +25°C
TA = +85°C
28
26
–40
–50
–60
TA = +85°C
–70
24
TA = –40°C
–80
–4
–2
0
2
4
6
8
10
LO POWER (dBm)
09914-019
22
20
–6
80
70
TA = +85°C
TA = –40°C
TA = +25°C
40
30
20
10
–4
–2
0
2
4
6
LO POWER (dBm)
8
10
09914-020
INPUT IP2 (dBm)
60
50
TA = +25°C
–90
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
RF FREQUENCY (GHz)
Figure 22. IF/3 Spurious vs. RF Frequency
Figure 19. Input IP3 vs. LO Power
0
–6
09914-021
–70
LO POWER (dBm)
INPUT IP3 (dBm)
TA = +85°C
–60
–65
5
4
–6
–45
Figure 20. Input IP2 vs. LO Power
Rev. 0 | Page 10 of 24
09914-022
CONVERSION LOSS (dB)
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
ADL5363
50
45
4
40
3
RESISTANCE (Ω)
35
RESISTANCE (Ω)
PERCENTAGE (%)
80
50
60
40
30
1
25
0
20
–1
–2
15
20
MEAN: 101.06
SD: 0.0008%
90
100
110
120
ISUPPLY (mA)
CAPACITANCE (pF)
10
–3
5
–4
0
30
09914-023
0
80
2
80
130
180
230
280
330
380
430
0
09914-026
100
CAPACITANCE (pF)
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
IF FREQUENCY (MHz)
Figure 23. Supply Current Distribution
Figure 26. IF Output Impedance (R Parallel, C Equivalent)
100
0
–2
–4
RF RETURN LOSS (dB)
60
40
20
–6
–8
–10
–12
–14
–16
MEAN: 7.7
SD: 0.104%
8.0
7.8
7.6
7.4
–20
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
09914-024
0
8.2
–18
7.2
CONVERSION LOSS DISTRIBUTION (dB)
RF FREQUENCY (GHz)
09914-027
PERCENTAGE (%)
80
Figure 27. RF Port Return Loss, Fixed IF
Figure 24.Conversion Loss Distribution
0
–3
100
–6
–9
LO RETURN LOSS (dB)
60
40
20
–15
SELECTED
–18
–21
–24
–27
UNSELECTED
–30
–33
–39
21
24
27
30
33
INPUT IP3 (dBm)
36
39
–42
–45
2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10
LO FREQUENCY (GHz)
Figure 25. Input IP3 Distribution
Figure 28. LO Return Loss, Selected and Unselected
Rev. 0 | Page 11 of 24
09914-028
0
–12
–36
MEAN: 31.13
SD: 0.286%
09914-025
PERCENTAGE (%)
80
ADL5363
60
0
57
–5
TA = +85°C
TA = –40°C
48
45
42
TA = +25°C
39
36
–10
–15
–20
–25
–30
TA = –40°C
TA = +85°C
–35
33
–40
30
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
–45
2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10
RF FREQUENCY (GHz)
TA = +25°C
LO FREQUENCY (GHz)
Figure 29. LO Switch Isolation vs. RF Frequency
09914-032
51
LO-TO-IF LEAKAGE (dBm)
54
09914-029
LO SWITCH ISOLATION (dB)
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
Figure 32. LO-to-RF Leakage vs. LO Frequency
–30
0
–5
–10
–15
–40
TA = –40°C
2xLO LEAKAGE (dBm)
RF-TO-IF ISOLATION (dBc)
–35
TA = +25°C
–45
TA = +85°C
–50
–55
2xLO TO RF
–20
–25
–30
2xLO TO IF
–35
–40
–45
–50
–60
2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10
LO FREQUENCY (GHz)
Figure 33. 2LO Leakage vs. LO Frequency
–5
–52
–10
–55
–58
TA = –40°C
TA = +25°C
–25
–30
TA = +85°C
–35
–61
3xLO TO RF
–64
3xLO TO IF
–67
–70
–73
–40
2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10
LO FREQUENCY (GHz)
Figure 31. LO-to-IF Leakage vs. LO Frequency
–76
2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10
LO FREQUENCY (GHz)
Figure 34. 3LO Leakage vs. LO Frequency
Rev. 0 | Page 12 of 24
09914-034
–20
3xLO LEAKAGE (dBm)
–15
09914-031
LO-TO-IF LEAKAGE (dBm)
Figure 30. RF-to-IF Isolation vs. RF Frequency
09914-033
RF FREQUENCY (GHz)
09914-030
–55
–60
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
ADL5363
19
9
17
8
15
7
13
6
NOISE FIGURE
11
5
9
4
7
3
5
09914-035
2
3
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
RF FREQUENCY (GHz)
10.5
30
9.5
29
9.0
28
8.5
27
8.0
7.5
36
VGS = 0,
VGS = 0,
VGS = 1,
VGS = 1,
NOISE FIGURE (dB)
26
25
24
7.0
600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800
BIAS RESISTOR VALUE (Ω)
140
0
1
0
1
130
34
32
30
28
26
24
120
110
100
90
80
22
70
20
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
60
600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800
RF FREQUENCY (GHz)
09914-036
INPUT IP3 (dBm)
CONVERSION LOSS (dB)
Figure 37. Power Conversion Loss, SSB Noise Figure, and
Input IP3 vs. IF Bias Resistor Value
SUPPLY CURRENT (mA)
38
31
10.0
Figure 35. Power Conversion Loss and SSB Noise Figure vs. RF Frequency
40
INPUT IP3 (dBm)
INPUT IP3 (dBm)
21
GAIN
32
11.0
09914-037
CONVERSION GAIN (dB)
10
23
0
1
0
1
Figure 36. Input IP3 vs. RF Frequency
BIAS RESISTOR VALUE (Ω)
Figure 38. Supply Current vs. Bias Resistor Value
Rev. 0 | Page 13 of 24
09914-038
11
VGS = 0,
VGS = 0,
VGS = 1,
VGS = 1,
SSB NOISE FIGURE (dB)
12
CONVERSION LOSS AND SSB NOISE FIGURE (dB)
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
ADL5363
3.3 V PERFORMANCE
VS = 3.3 V, IS = 60 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
67
100
90
80
63
INPUT IP2 (dBm)
TA = +85°C
61
59
TA = +25°C
70
57
50
20
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
09914-039
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 39. Supply Current vs. RF Frequency at 3.3 V
Figure 42. Input IP2 vs. RF Frequency at 3.3 V
9.0
9.0
8.5
8.5
8.0
TA = +85°C
8.0
SSB NOISE FIGURE (dB)
CONVERSION LOSS (dB)
TA = +85°C
30
56
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
7.5
TA = +25°C
7.0
TA = +25°C
60
40
TA = –40°C
TA = –40°C
09914-042
SUPPLY CURRENT (mA)
65
TA = –40°C
6.5
6.0
7.5
TA = +85°C
7.0
6.5
TA = –40°C
TA = +25°C
6.0
5.5
5.0
5.5
RF FREQUENCY (GHz)
Figure 40. Power Conversion Loss vs. RF Frequency at 3.3 V
31
19
TA = +25°C
TA = +85°C
16
13
10
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
RF FREQUENCY (GHz)
09914-041
INPUT IP3 (dBm)
TA = –40°C
25
22
FREQUENCY (GHz)
Figure 43. SSB Noise Figure vs. RF Frequency at 3.3 V
34
28
4.0
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
Figure 41. Input IP3 vs. RF Frequency at 3.3 V
Rev. 0 | Page 14 of 24
09914-043
5.0
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
09914-040
4.5
ADL5363
UPCONVERSION
9.0
12
8.5
11
8.0
10
9
TA = –40°C
7
TA = +85°C
6
TA = +25°C
6.5
TA = +85°C
TA = +25°C
TA = –40°C
6.0
5.5
5
5.0
4
4.5
3
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
4.0
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
RF FREQUENCY (GHz)
Figure 44. Power Conversion Loss vs. RF Frequency, VS = 5 V, Upconversion
RF FREQUENCY (GHz)
Figure 46. Power Conversion Loss vs. RF Frequency at 3.3 V, Upconversion
30
35
29
33
28
31
TA = +85°C
29
INPUT IP3 (dBm)
27
26
25
24
TA = +25°C
TA = –40°C
27
TA = –40°C
TA = +25°C
25
23
23
21
22
19
21
17
20
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
15
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
RF FREQUENCY (GHz)
09914-045
INPUT IP3 (dBm)
7.0
Figure 45. Input IP3 vs. RF Frequency, VS = 5 V, Upconversion
TA = +85°C
RF FREQUENCY (GHz)
Figure 47. Input IP3 vs. RF Frequency at 3.3 V, Upconversion
Rev. 0 | Page 15 of 24
09914-047
8
7.5
09914-046
CONVERSION LOSS (dB)
13
09914-044
CONVERSION LOSS (dB)
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
ADL5363
SPURIOUS PERFORMANCE
(N × fRF) − (M × fLO) spur measurements were made using the standard evaluation board. Mixer spurious products are measured in dBc
from the IF output power level. Data was measured only for frequencies less than 6 GHz. Typical noise floor of the measurement system
= −100 dBm.
5 V Performance
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, RF power = 0 dBm, VGS0 = VGS1 = 0 V, and
ZO = 50 Ω, unless otherwise noted.
0
0
1 −42.2
2 −75.8
3 <−100
4
5
6
7
N
8
9
10
11
12
13
14
15
1
−10.9
0.0
−76.5
−83.0
<−100
2
−28.3
−49.3
−64.6
<−100
<−100
3
−44.5
−31.2
−78.4
−73.5
<−100
<−100
4
−49.8
−78.5
−90.9
<−100
<−100
<−100
5
−94.7
−89.8
<−100
<−100
<−100
<−100
6
7
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
M
8
<−100
<−100
<−100
<−100
<−100
<−100
<−100
9
<−100
<−100
<−100
<−100
<−100
<−100
<−100
10
11
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
12
<−100
<−100
<−100
<−100
<−100
<−100
13
<−100
<−100
<−100
<−100
<−100
<−100
14
15
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
3.3 V Performance
VS = 3.3 V, IS = 56 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, RF power = 0 dBm, R9 = 226 Ω, VGS0 = VGS1 =
0 V, and ZO = 50 Ω, unless otherwise noted.
M
0
0
1 −41.9
2 −72.3
3 −94.6
4
5
6
7
N
8
9
10
11
12
13
14
15
1
−16.9
0.0
−80.3
−71.6
<−100
2
−35.1
−49.1
−62.7
<−100
<−100
3
−61.4
−30.4
−68.5
−61.2
<−100
<−100
4
−52.6
−71.9
−92.7
<−100
<−100
<−100
5
<−100
−75.1
<−100
<−100
<−100
<−100
6
<−100
<−100
<−100
<−100
<−100
<−100
7
8
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
Rev. 0 | Page 16 of 24
9
<−100
<−100
<−100
<−100
<−100
<−100
<−100
10
11
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
12
<−100
<−100
<−100
<−100
<−100
<−100
13
14
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
<−100
15
<−100
<−100
<−100
<−100
<−100
ADL5363
CIRCUIT DESCRIPTION
The ADL5363 consists of two primary components: the radio
frequency (RF) subsystem and the local oscillator (LO) subsystem.
The combination of design, process, and packaging technology
allows the functions of these subsystems to be integrated
into a single die, using mature packaging and interconnection
technologies to provide a high performance, low cost design
with excellent electrical, mechanical, and thermal properties.
In addition, the need for external components is minimized,
optimizing cost and size.
RF SUBSYSTEM
The single-ended, 50 Ω RF input is internally transformed to a
balanced signal using a low loss (<1 dB) unbalanced-to-balanced
(balun) transformer. This transformer is made possible by an
extremely low loss metal stack, which provides both excellent
balance and dc isolation for the RF port. Although the port can
be dc connected, it is recommended that a blocking capacitor be
used to avoid running excessive dc current through the part.
The RF balun can easily support an RF input frequency range
of 2300 MHz to 2900 MHz.
The RF subsystem consists of an integrated, low loss RF balun,
passive MOSFET mixer, sum termination network.
The LO subsystem consists of an SPDT-terminated FET switch
and a three-stage limiting LO amplifier. The purpose of the LO
subsystem is to provide a large, fixed amplitude, balanced signal
to drive the mixer independent of the level of the LO input.
A block diagram of the device is shown in Figure 48.
VCMI
IFOP
IFON
PWDN
COMM
20
19
18
17
16
ADL5363
VPMX 1
15
LOI2
RFIN 2
14
VPSW
RFCT 3
13
VGS1
COMM 4
12
VGS0
COMM 5
11
LOI1
6
7
8
9
10
VLO3
LGM3
VLO2
LOSW
NC
NC = NO CONNECT
As the mixer is inherently broadband and bidirectional, it
is necessary to properly terminate all the idler (M × N product)
frequencies generated by the mixing process. Terminating the
mixer avoids the generation of unwanted intermodulation
products and reduces the level of unwanted signals at the IF
output. This termination is accomplished by the addition of a
sum network between the IF output and the mixer.
The IP3 performance can be optimized by adjusting the supply
current with an external resistor. Figure 37 and 38 illustrate how
the bias resistor affects the performance with a 5 V supply.
Additionally, dc current can be saved by increasing either or
both resistors. It is permissible to reduce the dc supply voltage
to as low as 3.3 V, further reducing the dissipated power of the
part. (Note that no performance enhancement is obtained by
reducing the value of these resistors and excessive dc power
dissipation may result.)
09914-051
BIAS
GENERATOR
The resulting balanced RF signal is applied to a passive mixer
that commutates the RF input with the output of the LO subsystem.
The passive mixer is essentially a balanced, low loss switch that
adds minimum noise to the frequency translation. The only
noise contribution from the mixer is due to the resistive loss
of the switches, which is in the order of a few ohms.
Figure 48. Simplified Schematic
Rev. 0 | Page 17 of 24
ADL5363
LO SUBSYSTEM
The ADL5363 has two LO inputs permitting multiple synthesizers
to be rapidly switched with extremely short switching times
(<40 ns) for frequency agile applications. The two inputs are
applied to a high isolation SPDT switch that provides a constant
input impedance, regardless of whether the port is selected, to
avoid pulling the LO sources. This multiple section switch also
ensures high isolation to the off input, minimizing any leakage
from the unwanted LO input that may result in undesired IF
responses.
The single-ended LO input is converted to a fixed amplitude
differential signal using a multistage, limiting LO amplifier.
This results in consistent performance over a range of LO input
power. Optimum performance is achieved from −6 dBm to
+10 dBm, but the circuit continues to function at considerably
lower levels of LO input power.
The performance of this amplifier is critical in achieving a
high intercept passive mixer without degrading the noise floor
of the system. This is a critical requirement in an interferer rich
environment, such as cellular infrastructure, where blocking
interferers can limit mixer performance. The bandwidth of the
intermodulation performance is somewhat influenced by the
current in the LO amplifier chain. For dc current sensitive
applications, it is permissible to reduce the current in the
LO amplifier by raising the value of the external bias control
resistor. For dc current critical applications, the LO chain
can operate with a supply voltage as low as 3.3 V, resulting in
substantial dc power savings.
In addition, when operating with supply voltages below 3.6 V,
the ADL5363 has a power-down mode that permits the dc
current to drop to <200 μA.
All of the logic inputs are designed to work with any logic family
that provides a Logic 0 input level of less than 0.4 V and a Logic 1
input level that exceeds 1.4 V. All logic inputs are high impedance
up to Logic 1 levels of 3.3 V. At levels exceeding 3.3 V, protection
circuitry permits operation up to 5.5 V, although a small bias
current is drawn.
All pins, including the RF pins, are ESD protected and have
been tested up to a level of 1500 V HBM and 1250 V CDM.
Rev. 0 | Page 18 of 24
ADL5363
APPLICATIONS INFORMATION
BASIC CONNECTIONS
BIAS RESISTOR SELECTION
The ADL5363 mixer is designed to downconvert radio frequencies (RF) primarily between 2300 MHz and 2900 MHz to lower
intermediate frequencies (IF) between 30 MHz and 450 MHz.
Figure 49 depicts the basic connections of the mixer. To prevent
nonzero dc voltages from damaging the RF balun or LO input
circuit, ac-couple the RF and LO input ports. The RFIN
matching network consists of a series 1.5 pF capacitor and a
shunt 12 nH inductor to provide the optimized RF input return
loss for the desired frequency band.
An external resistor, RBIAS LO, is used to adjust the bias current
of the integrated amplifiers at the LO terminals. It is necessary
to have a sufficient amount of current to bias the internal LO
amplifier to optimize dc current vs. optimum IIP3 performance.
Figure 37 and Figure 38 provide the reference for the bias
resistor selection when lower power consumption is considered
at the expense of conversion gain and IP3 performance.
MIXER VGS CONTROL DAC
The ADL5363 features two logic control pins, VGS0 (Pin 12) and
VGS1 (Pin 13), that allow programmability for internal gate-tosource voltages for optimizing mixer performance over desired
frequency bands. The evaluation board defaults both VGS0 and
VGS1 to ground.
IF PORT
The real part of the output impedance is approximately 50 Ω, as
seen in Figure 26, which matches many commonly used SAW
filters without the need for a transformer. This results in a
voltage conversion loss that is approximately the same as the
power conversion loss, as shown in Table 3.
IF1_OUT
R1
0Ω
T1
C24
560pF
C25
560pF
+5V
20
19
10kΩ
18
17
10pF
4.7µF
+5V
16
ADL5363
22pF
1
15
2
14
LO2_IN
10µH
1.5pF
RF-IN
3
13
10pF
BIAS
GENERATOR
4
12
5
11
22pF
6
7
8
9
RBIAS LO
10
10kΩ
+5V
10pF
LO1_IN
10pF
Figure 49. Typical Application Circuit
Rev. 0 | Page 19 of 24
09914-052
0.01µF
+5V
10pF
12nH
ADL5363
EVALUATION BOARD
An evaluation board is available for the family of double balanced mixers. The standard evaluation board schematic is shown in Figure 50.
The evaluation board is fabricated using Rogers® RO3003 material. Table 7 describes the various configuration options of the evaluation
board. Evaluation board layout is shown in Figure 51 to Figure 54.
IF1_OUT
R1
0Ω
T1
C25
560pF
C24
560pF
R14
0Ω
C21
10pF
COMM
PWDN
IFON
VPMX
VPOS
COMM
VGS0
COMM
LOI1
C6
10pF
C22
1nF
VGS1
R22
10kΩ
R23
15kΩ
VGS1
VGS0
LO1_IN
NC
LOSW
C4
10pF
VLO2
C5
0.01µF
ADL5363
RFCT
LGM3
Z1
12nH
VPOS
C20
10pF
VPSW
VLO3
C1
1.5pF
LO2_IN
LOI2
RFIN
RF-IN
C12
22pF
C10
22pF
LOSEL
R9
1.1kΩ
C8
10pF
VPOS
Figure 50. Evaluation Board Schematic
Rev. 0 | Page 20 of 24
R4
10kΩ
09914-053
C2
10µF
IFOP
L3
0Ω
VCMI
VPOS
PWR_UP
R21
10kΩ
ADL5363
Table 7. Evaluation Board Configuration
Components
C2, C6, C8,
C20, C21
Function
Power supply
decoupling
C1, C4, C5, Z1
RF input interface
T1, R1, C24, C25
IF output interface
C10, C12, R4
LO interface
R21
PWDN interface
C22, L3, R9, R14,
R22, R23, VGS0,
VGS1
Bias control
Description
Power Supply Decoupling. Nominal supply decoupling
consists of a 10 μF capacitor to ground in parallel with a
10 pF capacitor to ground positioned as close to the device
as possible.
RF Input Interface. The input channels are ac-coupled
through C1. C4 and C5 provide bypassing for the center taps
of the RF input baluns.
IF Output Interface. T1 is a 1:1 impedance transformer used
to provide a single-ended IF output interface. Remove R1
for balanced output operation. C24 and C25 are used to
block the dc bias at the IF ports.
LO Interface. C10 and C12 provide ac coupling for the
LO1_IN and LO2_IN local oscillator inputs. LOSEL selects
the appropriate LO input for both mixer cores. R4 provides
a pull-down to ensure that LO1_IN is enabled when the
LOSEL test point is logic low. LO2_IN is enabled when
LOSEL is pulled to logic high.
PWDN Interface. R21 pulls the PWDN logic low and enables
the device. The PWR_UP test point allows the PWDN
interface to be exercised using the an external logic
generator. Grounding the PWDN pin for nominal operation
is allowed. Using the PWDN pin when supply voltages
exceed 3.3 V is not allowed.
Bias Control. R22 and R23 form a voltage divider to provide
3 V for logic control, bypassed to ground through C22.
VGS0 and VGS1 jumpers provide programmability at the
VGS0 and VGS1 pins. It is recommended to pull these two
pins to ground for nominal operation. R9 sets the bias
point for the internal LO buffers.
Rev. 0 | Page 21 of 24
Default Conditions
C2 = 10 μF (size 0603),
C6, C8, C20, C21 = 10 pF (size 0402)
C1 = 1.5 pF (size 0402),
C4 = 10 pF (size 0402),
C5 = 0.01 μF (size 0402)
Z1= 12 nH (size 0402)
T1 = TC1-1-13M+ (Mini-Circuits),
R1 = 0 Ω (size 0402),
C24, C25 = 560 pF (size 0402)
C10, C12 = 22 pF (size 0402),
R4 = 10 kΩ (size 0402)
R21 = 10 kΩ (size 0402)
C22 = 1 nF (size 0402),
L3 = 0 Ω (size 0603),
R9 = 1.1 kΩ (size 0402),
R14 = 0 Ω (size 0402),
R22 = 10 kΩ (size 0402),
R23 = 15 kΩ (size 0402),
VGS0 = VGS1 = 3-pin shunt
09914-152
09914-154
ADL5363
09914-155
Figure 53. Evaluation Board Power Plane, Internal Layer 2
09914-153
Figure 51. Evaluation Board Top Layer
Figure 54. Evaluation Board Bottom Layer
Figure 52. Evaluation Board Ground Plane, Internal Layer 1
Rev. 0 | Page 22 of 24
ADL5363
OUTLINE DIMENSIONS
0.60 MAX
5.00
BSC SQ
0.60 MAX
15
PIN 1
INDICATOR
20
16
1
PIN 1
INDICATOR
4.75
BSC SQ
0.65
BSC
3.20
3.10 SQ
3.00
EXPOSED
PAD
(BOTTOM VIEW)
5
0.90
0.85
0.80
12° MAX
SEATING
PLANE
0.70
0.65
0.60
0.35
0.28
0.23
0.75
0.60
0.50
0.05 MAX
0.01 NOM
COPLANARITY
0.05
0.20 REF
10
6
2.60 BSC
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
COMPLIANT TO JEDEC STANDARDS MO-220-VHHC
042209-B
TOP VIEW
11
Figure 55. 20-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
5 mm × 5 mm Body, Very Thin Quad
(CP-20-5)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1
ADL5363ACPZ-R7
Temperature Range
−40°C to +85°C
ADL5363-EVALZ
1
Package Description
20-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
7” Tape and Reel
Evaluation Board
Z = RoHS Compliant Part.
Rev. 0 | Page 23 of 24
Package Option
CP-20-5
Ordering Quantity
1,500
1
ADL5363
NOTES
©2011 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D09914-0-7/11(0)
Rev. 0 | Page 24 of 24