ON MMBT2369LT1G Switching transistor Datasheet

MMBT2369LT1G,
MMBT2369ALT1G
Switching Transistors
NPN Silicon
http://onsemi.com
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
15
Vdc
Collector −Emitter Voltage
VCES
40
Vdc
Collector −Base Voltage
VCBO
40
Vdc
Emitter −Base Voltage
VEBO
4.5
Vdc
IC
200
mAdc
Collector Current − Continuous
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
2
EMITTER
3
SOT−23
CASE 318
STYLE 6
1
THERMAL CHARACTERISTICS
Characteristic
1
BASE
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
PD
RqJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
MARKING DIAGRAM
xxx M G
G
1
xxx = M1J or 1JA
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBT2369LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
MMBT2369ALT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 7
1
Publication Order Number:
MMBT2369LT1/D
MMBT2369LT1G, MMBT2369ALT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V(BR)CES
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Min
Typ
Max
15
−
−
40
−
−
40
−
−
4.5
−
−
−
−
−
−
0.4
30
−
−
0.4
40
−
40
20
30
20
20
−
−
−
−
−
−
−
120
120
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.20
0.30
0.25
0.50
0.7
−
−
−
−
−
−
−
0.85
1.02
1.15
1.60
−
−
4.0
5.0
−
−
−
5.0
13
−
8.0
12
−
10
18
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
ICBO
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
MMBT2369A
ICES
Vdc
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C)
(IC = 30 mAdc, VCE = 0.4 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
MMBT2369A
Collector −Emitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
Base −Emitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369/A
MMBT2369A
MMBT2369A
MMBT2369A
hFE
VCE(sat)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small Signal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
hfe
pF
−
SWITCHING CHARACTERISTICS
Storage Time
(IB1 = IB2 = IC = 10 mAdc)
ts
Turn−On Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
ton
Turn−Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
toff
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
2
ns
ns
ns
MMBT2369LT1G, MMBT2369ALT1G
t1
+10.6 V
0
-1.5 V
3V
< 1 ns
270 W
t1
+10.8 V
3.3 k
-2 V
Cs* < 4 pF
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
10 V
95 W
0
< 1 ns
Cs* < 12 pF
1k
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors.
Figure 2. ton Circuit − 100 mA
Figure 1. ton Circuit − 10 mA
+10.75 V
270 W
t1
+11.4 V
t1
10 V
0
-8.6 V
0
-9.15 V
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
Cs* < 12 pF
1k
< 1 ns
PULSE WIDTH (t1) BETWEEN
10 AND 500 ms
DUTY CYCLE = 2%
Cs* < 4 pF
3.3 k
95 W
1N916
*Total shunt capacitance of test jig and connectors.
Figure 4. toff Circuit − 100 mA
Figure 3. toff Circuit − 10 mA
TO OSCILLOSCOPE
INPUT IMPEDANCE = 50 W
RISE TIME = 1 ns
TURN-ON WAVEFORMS
Vin
0
220 W
10%
Vout
ton
90%
PULSE GENERATOR
Vin RISE TIME < 1 ns
SOURCE IMPEDANCE = 50 W
PW ≥ 300 ns
DUTY CYCLE < 2%
Vin
0.1 mF
Vout
3.3 kW
50 W
VBB +-
50 W
3.3 k
0.0023 mF
0.005 mF
0.0023 mF
0.005 mF
0.1 mF
0.1 mF
3
10%
Vin
90%
Vout
+V =3V
- CC
Figure 5. Turn−On and Turn−Off Time Test Circuit
http://onsemi.com
TURN-OFF WAVEFORMS
0
toff
VBB = +12 V
Vin = -15 V
MMBT2369LT1G, MMBT2369ALT1G
100
6
LIMIT
TYPICAL
TJ = 25°C
5
Cib
SWITCHING TIMES (nsec)
CAPACITANCE (pF)
4
3
Cob
2
1
0.1
βF = 10
VCC = 10 V
VOB = 2 V
50
10
5
ts
td
2
0.2
0.5
1.0
2.0
REVERSE BIAS (VOLTS)
5.0
C < COPT
1
10
2
5
10
20
IC, COLLECTOR CURRENT (mA)
50
100
Figure 7. Typical Switching Times
t1
+6 V
C=0
10 V
980
0
-4 V
COPT
500
< 1 ns
Cs* < 3 pF
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
TIME
Figure 8. Turn−Off Waveform
VCE , MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCC = 10 V
tr
Figure 6. Junction Capacitance Variations
C
tf
tr (VCC = 3 V)
20
Figure 9. Storage Time Equivalent Test Circuit
1.0
TJ = 25°C
0.8
IC = 3 mA
IC = 10 mA
IC = 30 mA
IC = 50 mA
IC = 100 mA
0.6
0.4
0.2
0.02
0.05
0.1
0.2
0.5
1
IB, BASE CURRENT (mA)
2
5
Figure 10. Maximum Collector Saturation Voltage Characteristics
http://onsemi.com
4
10
20
MMBT2369LT1G, MMBT2369ALT1G
TJ = 125°C
VCE = 1 V
75°C
25°C
100
TJ = 25°C and 75°C
-15°C
50
-55°C
20
1
2
5
10
IC, COLLECTOR CURRENT (mA)
20
50
Figure 11. Minimum Current Gain Characteristics
1.4
V(sat) , SATURATION VOLTAGE (VOLTS)
hFE, MINIMUM DC CURRENT GAIN
200
βF = 10
TJ = 25°C
1.2
MAX VBE(sat)
1.0
MIN VBE(sat)
0.8
0.6
0.4
0.2
MAX VCE(sat)
1
2
5
10
20
IC, COLLECTOR CURRENT (mA)
50
Figure 12. Saturation Voltage Limits
http://onsemi.com
5
100
100
MMBT2369LT1G, MMBT2369ALT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT2369LT1/D
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