ESJA56-30A 5.0A 30kV--High voltage silicon rectifier diode HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high SHAPE DISPLAY: reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. High voltage design. 3. High frequency . 4. Conform to RoHS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. SIZE: (Unit:mm) HVGT NAME: DO-312 APPLICATIONS: 1. High voltage multiplier circuit 2. Electrostatic generator circuit . 3. General purpose high voltage rectifier. 4. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 0.5 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units VRRM Ta=25°C; 30 kV IO Ta=25°C;Resistive Load 5.0 mA IFSM Ta=25°C;8.3 mS 0.5 A Repetitive Peak Renerse Voltage Average Output Current Suege Current Junction Temperature TJ -40~+125 °C Allowable Operation Case Temperature Tc 125 °C TSTG -40~+125 °C Storage Temperature ELECTRICAL CHARACTERISTICS: Items Maximum Forward Voltage Drop Maximum Reverse Current Maximum Reverse Recovery Time Junction Capacitance Ta=25°C (Unless otherwise specified) Symbols Condition Data value Units VF at 25°C;IF =IF(AV) 65 V IR1 at 25°C;VR =VRRM 2.0 uA IR2 at 100°C;VR =VRRM 5.0 uA TRR at 25°C; IF=2mA; IR=4mA; IRR =1mA 80 nS CJ at 25°C; VR=0V; f=1MHz 1.0 pF GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2016 1 / 1