AP9930GM-HF Halogen-Free Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on LCD Monitor Inverter N-CH BVDSS P2G N2D/P2D RDS(ON) P1S/P2S P1G N1S/N2S ▼ RoHS Compliant 33mΩ ID N2G 5.5A P-CH BVDSS N1D/P1D SO-8 30V N1G Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. -30V RDS(ON) 55mΩ ID -4.1A P1S P2S P1G P2G P2N2D P1N1D The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N2G N1G Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ N2S N1S Absolute Maximum Ratings Units P-channel 30 -30 V ±20 ±20 V Continuous Drain Current 3 5.5 -4.1 A Continuous Drain Current 3 4.4 -3.3 A 20 -20 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range -55 to 150 ℃ Linear Derating Factor 1.38 W 0.01 W/℃ -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 90 ℃/W 1 200805154 AP9930GM-HF o N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 30 - - V VGS=10V, ID=5A - - 33 mΩ VGS=4.5V, ID=3A - - 60 mΩ VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=5A - 5.2 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=5A - 7 10 nC IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=15V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC 2 td(on) Turn-on Delay Time VDS=15V - 7 - ns tr Rise Time ID=1A - 10 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=10V - 18 - ns tf Fall Time RD=15Ω - 8 - ns Ciss Input Capacitance VGS=0V - 600 960 pF Coss Output Capacitance VDS=25V - 229.8 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 94 - pF Min. Typ. IS=1.2A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=1.7A, VGS=0V - 21 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 16 - nC 2 AP9930GM-HF o P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. -30 - - V VGS=-10V, ID=-4A - - 55 mΩ VGS=-4.5V, ID=-2A - - 100 mΩ VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-4A - 4 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=-4A - 8 11 nC IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 4 - nC 2 td(on) Turn-on Delay Time VDS=-15V - 6.6 - ns tr Rise Time ID=-1A - 7.7 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 22 - ns tf Fall Time RD=15Ω - 9.3 - ns Ciss Input Capacitance VGS=0V - 570 790 pF Coss Output Capacitance VDS=-25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Min. Typ. IS=-1.2A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-4A, VGS=0V, - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board , t <10sec ; 186 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP9930GM-HF N-Channel 25 20 T A =25 o C T A =150 o C ID , Drain Current (A) 20 ID , Drain Current (A) 10V 8.0V 6.0V 4.0V 15 10 10 V G =3.0V 5 V G =3.0V 5 10V 8.0V 6.0V 4.0V 15 0 0 0 1 2 3 4 5 6 0 1 V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 45 I D =5A V G =10V I D =3A T A =25 ℃ 1.4 Normalized RDS(ON) RDS(ON) (mΩ) 40 35 30 1.2 1.0 0.8 25 0.6 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 10.00 1.8 1.00 VGS(th) (V) T j =25 o C IS(A) T j =150 o C 1.6 1.4 0.10 1.2 0.01 1 0.1 0.3 0.5 0.7 0.9 1.1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP9930GM-HF N-Channel f=1.0MHz 1000 I D =5A V DS =15V 10 C iss 8 C oss C (pF) VGS , Gate to Source Voltage (V) 12 6 100 C rss 4 2 10 0 0 4 8 12 1 16 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthja) Duty factor=0.5 10 ID (A) 100us 1ms 1 10ms 100ms 1s T A =25 o C Single Pulse 0.1 DC 0.01 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 186℃/W 0.001 0.1 1 10 100 0.0001 0.001 0.01 Fig 9. Maximum Safe Operating Area VDS 0.1 1 10 100 1000 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 5 AP9930GM-HF P-Channel 20 25 o T A =150 C o T A =25 C -ID , Drain Current (A) -ID , Drain Current (A) -10V -10V 20 -8.0V -6.0V 15 -4.0V 10 -8.0V -6.0V 15 10 -4.0V 5 5 V G =-3.0V V G =-3.0V 0 0 0 1 2 3 4 5 0 6 -V DS , Drain-to-Source Voltage (V) 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 95 1.8 I D =-2A T A =25 ℃ I D = -4 A V G = -10 V Normalized RDS(ON) 1.6 RDS(ON) (mΩ) 75 55 1.4 1.2 1 0.8 35 0.6 2 4 6 8 10 -50 -V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10.00 2 1.8 T j =150 o C T j =25 o C -IS(A) -VGS(th) (V) 1.00 1.6 1.4 0.10 1.2 0.01 1 0.1 0.3 0.5 0.7 0.9 1.1 -V SD ,Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP9930GM-HF P-Channel f=1.0MHz 1000 I D =-4A V DS =-24V C iss 12 C (pF) -VGS , Gate to Source Voltage (V) 16 8 100 C oss C rss 4 10 0 0 4 8 12 16 1 20 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 ID (A) 100us 1ms 1 10ms 100ms 1s 0.1 o T A =25 C Single Pulse DC 0.01 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.01 Rthja = 186℃/W 0.001 0.1 1 10 100 0.0001 0.001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 7