G D S G TO-92 SOT-23 D S Mark: 6W / 6X / 6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter VDG Drain-Gate Voltage VGS Gate-Source Voltage IGF Forward Gate Current TJ ,Tstg Operating and Storage Junction Temperature Range Value Units - 30 V 30 V 50 mA -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max Units J174 - J177 350 2.8 125 *MMBFJ175 225 1.8 357 556 mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation J174-177, Rev. A J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units 1.0 nA OFF CHARACTERISTICS B(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 µA, VDS = 0 IGSS Gate Reverse Current VGS = 20 V, VDS = 0 VGS(off) Gate-Source Cutoff Voltage VDS = - 15 V, ID = - 10 nA J174 J175 J176 J177 5.0 3.0 1.0 0.8 10 6.0 4.0 2.5 V V V V J174 J175 J176 J177 J174 J175 J176 J177 - 20 - 7.0 - 2.0 - 1.5 - 100 - 60 - 25 - 20 85 125 250 300 mA mA mA mA Ω Ω Ω Ω 30 V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = - 15 V, IGS = 0 rDS(on) Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Characteristics Common Drain-Source - TRANSCONDUCTANCE (mmhos) 1.0 V 1.5 V -8 2.0 V -4 2.5 V 3.0 V 3.5 V fs 0 0 -1 -2 -3 -4 VDS - DRAIN-SOURCE VOLTAGE (V) -5 g - DRAIN CURRENT (mA) V GS = 0 V -12 I D 0.5 V 50 500 I DSS r DS g fs 10 100 5 50 I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ -100 mV, VGS = 0 V GS(off) @ V DS = - 15V, I D = - 1.0 µA 1 1 V GS (OFF) 10 2 5 10 - GATE CUTOFF VOLTAGE (V) - DRAIN "ON" RESISTANCE (Ω) -16 1,000 DS T A = 25°C TYP V GS(off) = 4.5 V 100 r Parameter Interactions -20 J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch (continued) Typical Characteristics (continued) Transfer Characteristics Transfer Characteristics 16 V GS(off) = - 4.5 V -24 - 55°C 25°C 125°C VGS(off) = 2.5 V -16 - 55°C 25°C 125°C 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) - 55°C 25°C 125°C 4 50 20 10 0 r DS r DS = V GS 1 -________ V GS(off) 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) 4 Output Conductance vs Drain Current V GS(off) = 2.5V 25°C V GS(off) = 6.0V - 55°C 25°C 125°C 0.5 V DG = -15V f = 1.0 kHz 0.1 _ 0.1 _ ID _ 1 10 - DRAIN CURRENT (mA) -5.0V 100 -5.0V -10V V GS(off) = - 4.5V -20V -20V -10V 10 V GS(off) = - 2.5V _ 1 0.01 _ _ 0.1 1 I D - DRAIN CURRENT (mA) _ 10 100 10 1 f = 1.0 kHz Capacitance vs Voltage Transconductance vs Drain Current 5 0 1000 V GS(off) @ 5.0V, 10 µA C is (C rs ) - CAPACITANCE (pF) - NORMALIZED RESISTANCE 8 4 100 DS - 55°C 25°C 125°C VGS(off) = 2.5 V 12 I 0 Normalized Drain Resistance vs Bias Voltage r VGS(off) = - 4.5 V D -8 0 g fs - TRANSCONDUCTANCE (mmhos) V DS = - 15 V - DRAIN CURRENT (mA) V DS = - 15 V g os - OUTPUT CONDUCTANCE ( µ mhos) I D - DRAIN CURRENT (mA) -32 _ 100 f = 0.1 - 1.0 MHz C is (V DS = -15V) 10 5 1 C rs (V DS = -15V) 0 4 8 12 16 V GS - GATE-SOURCE VOLTAGE (V) 20 J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch (continued) Typical Characteristics (continued) Noise Voltage vs Frequency r DS - DRAIN "ON" RESISTANCE (Ω) 50 I D = - 0.2 mA 10 I D = 5.0 mA 5 V DG = - 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f ≥ 1.0 kHz 1 0.01 0.1 1 10 f - FREQUENCY (kHz) Channel Resistance vs Temperature 1000 100 500 V DS = -100 mV V GS(off) = 2.5V V GS(off) = 8.0V 100 50 10 -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( o C) 350 300 TO-92 250 200 150 SOT-23 100 50 0 0 25 V GS = 0 V GS(off) = 4.5V Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (mW) e n - NOISE VOLTAGE (nV / √ Hz) 100 50 75 100 o TEMPERATURE ( C) 125 150 J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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