Mitsubishi CM100TU-24F Mitsubishi igbt modules high power switching use Datasheet

MITSUBISHI IGBT MODULES
CM100TU-24F
HIGH POWER SWITCHING USE
CM100TU-24F
¡IC ................................................................... 100A
¡VCES ......................................................... 1200V
¡Insulated Type
¡6-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
107
90 ±0.25
23
12
4–φ5.5
MOUNTING HOLES
CM
G
E
12
11
G
E
V
12
23
21.7
GuN
EuN
GvN
EvN
GwN
EwN
E
G
E
W
23
11
12
21.7
11
Tc measured point
8.1
7.1
+1
29 –0.5
0.8
4
LABEL
0.5
G
48.5
11 14.4
21.7
E
3.75
G
U
5–M5NUTS
Tc measured point 2.8
11
21.7
E
26
102
80 ±0.25
11
G
17
P
N
GuP
EuP
GvP
EvP
GwP
EwP
(4)
3.75
12
P
GUP
GVP
RTC
EUP
U
GUN
RTC
EUN
GWP
RTC
EVP
V
GVN
RTC
EVN
RTC
EWP
W
GWN
RTC
EWN
N
CIRCUIT DIAGRAM
Feb. 2009
MITSUBISHI IGBT MODULES
CM100TU-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Ratings
1200
±20
100
200
100
200
500
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
680
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M5 screw
Typical value
Unit
V
V
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Parameter
Symbol
Test conditions
Limits
Typ.
—
Max.
1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 10mA, VCE = 10V
5
6
7
V
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
—
1.8
1.9
—
—
—
1100
—
—
—
—
—
4.1
—
—
—
0.09
—
—
20
2.4
—
39
1.7
1.0
—
100
50
400
300
150
—
3.2
0.25
0.35
—
0.18*3
µA
VCE(sat)
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal
resistance*1
Contact thermal resistance
Thermal resistance
External gate resistance
Tj = 25°C
Tj = 125°C
IC = 100A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 600V, IC = 100A, VGE = 15V
VCC = 600V, IC = 100A
VGE = ±15V
RG = 3.1Ω, Inductive load
IE = 100A
IE = 100A, VGE = 0V
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to heat sink, Thermal compound applied*2 (1/6 module)
Case temperature measured point is just under the chips
31
mA
V
nF
nC
ns
ns
µC
V
K/W
Ω
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM100TU-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
140
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
VGE = 20V
15
11
160
9
10
120
100
8.5
80
60
40
8
20
0
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
9.5
Tj = 25°C
180
0
0.5
1
1.5
2
2.5
3
3.5
VGE = 15V
Tj = 25°C
2.5
Tj = 125°C
2
1.5
1
0.5
0
40
80
120
160
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
3
IC = 200A
IC = 100A
2
IC = 40A
1
6
8
10
200
103
Tj = 25°C
4
0
12
14
16
18
7
5
3
2
Tj = 25°C
102
7
5
3
2
101
7
5
3
2
100
0.5
20
1
1.5
2
2.5
3
3.5
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
102
7
5
Cies
3
2
SWITCHING TIMES (ns)
CAPACITANCE Cies, Coes, Cres (nF)
3
0
4
EMITTER CURRENT IE (A)
COLLECTOR CURRENT IC (A)
200
101
7
5
3
2
100
Coes
7
5
3
2
Cres
VGE = 0V
7
5
3
2
102
7
5
3
2
COLLECTOR-EMITTER VOLTAGE VCE (V)
td(on)
tr
Conditions:
VCC = 600V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive load
101
7
5
3
2
100 1
10
10–1 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
tf
td(off)
2
3
5 7 102
2
3
5 7 103
COLLECTOR CURRENT IC (A)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM100TU-24F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
103
7
5
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
3
2
102
Irr
trr
7
5
3
2
101 0
10
2
3
5 7 101
Conditions:
VCC = 600V
VGE = ±15V
RG = 3.1Ω
Tj = 25°C
Inductive load
2
3
5 7 102
EMITTER CURRENT IE (A)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 IGBT part:
5 Per unit base = Rth(j–c) = 0.25K/W
3 FWDi part:
2 Per unit base = Rth(j–c) = 0.35K/W
100
7
5
3
2
3
2
10–1
10–1
10–2
10–2
7
5
3
2
7
5
3
2
10–3
7
5
3
2
7
5
3
2
Single Pulse
TC = 25°C
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
20
IC = 100A
18
16
14
VCC = 400V
12
VCC = 600V
10
8
6
4
2
0
0
500
1000
1500
GATE CHARGE QG (nC)
Feb. 2009
4
Similar pages