UMT2222A / SST2222A / MMST2222A / PN2222A Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / MMST2222A / PN2222A !External dimensions (Units : mm) UMT2222A 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 (3) ROHM : UMT3 EIAJ : SC-70 !Package, marking, and packaging specifications UMT2222A Packaging type UMT3 R1P SST3 R1P SMT3 R1P TO-92 − T106 T116 T146 T93 3000 3000 3000 3000 Code Basic ordering unit (pieces) 2.1±0.1 2.9±0.2 SST2222A PN2222A 0.45±0.1 (2) (1) 0 ∼ 0.1 0.2Min. (3) +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions ROHM : SST3 2.9±0.2 MMST2222A 0.8±0.1 (2) !Absolute maximum ratings (Ta = 25°C) 0 ∼ 0.1 2.8±0.2 0.2 1.6+ −0.1 (1) Junction temperature Storage temperature 75 40 6 0.6 V V V A VEBO IC 0.2 W Tj 0.35 0.625 150 W W °C Tstg −55 ∼ +150 °C PC +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions PN2222A 4.8±0.2 ∗ 3.7±0.2 0.5±0.1 ∗ When mounted on a 7 x 5 x 0.6 mm ceramic board ROHM : TO-92 EIAJ : SC-43 (1) (2) (3) +0.3 2.5 − 0.1 5 +0.15 0.45 − 0.05 !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO 75 40 − − − − V V IC =10µA IC =10mA Emitter-base breakdown voltage Conditions BVEBO − − 100 V nA IE =10µA ICBO 6 − − Collector cutoff current Emitter cutoff current IEBO − − 100 nA VEB = 3V Collector-emitter saturation voltage VCE(sat) − − − − 0.3 1 V IC/IB =150mA/15mA IC/IB =500mA/50mA Base-emitter saturation voltage VBE(sat) 0.6 V IC/IB =150mA/15mA IC/IB =500mA/50mA DC current transfer ratio Transition frequency Output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time hFE VCB = 60V − 1.2 − − 2 35 − − VCE =10V , IC =0.1mA 50 75 − − − − VCE =10V , IC =1mA VCE =10V , IC =10mA VCE =1V , IC =150mA − 50 − − 100 − 300 Cob 40 300 − − − − − − 8 MHz pF Cib − − 25 pF td − − 10 ns tr − − 25 ns fT (1) Emitter (2) Base (3) Collector 2.5Min. VCBO VCEO ROHM : SMT3 EIAJ : SC-59 4.8±0.2 UMT2222A,SST2222A, MMST2222A Collector power SST2222A dissipation PN2222A Unit (12.7Min.) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Limits 0.3 ∼ 0.6 (3) Symbol (1) Emitter (2) Base (3) Collector 1.1+0.2 −0.1 1.9±0.2 0.95 0.95 Parameter (1) Emitter (2) Base (3) Collector 0.95 +0.2 −0.1 1.9±0.2 0.95 0.95 0.2 1.3+ −0.1 Marking SST2222A MMST2222A 0 ∼ 0.1 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions 2.4±0.2 Part No. 0.7±0.1 0.2 (2) 1.25±0.1 (1) 0.1 ∼ 0.4 !Features 1) BVCEO > 40V (IC=10mA) 2) Complements the UMT2907A / SST2907A / MMST2907A / PN2907A. tstg − − 225 ns tf − − 60 ns VCE =10V , IC =150mA VCE =10V , IC =500mA VCE =20V , IC =−20mA, f =100MHz VCB =10V , f =100kHz VEB =0.5V , f =100kHz VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , IC =150mA , IB1 =−IB2 =15mA VCC =30V , IC =150mA , IB1 =−IB2 =15mA 2.3 (1) Emitter (2) Base (3) Collector UMT2222A / SST2222A / MMST2222A / PN2222A Transistors !Electrical characteristic curves 100 COLLECTOR CURRENT : Ic(mA) Ta=25°C 1000 600 DC CURRENT GAIN : hFE 500 400 50 Ta=25°C VCE=10V 100 300 200 1V 100 IB=0µA 10 0.1 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE(V) 1.0 COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) Fig.1 Grounded emitter output characteristics 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.3 DC current gain vs. collector current(Ι) 1000 Ta=25°C IC / IB=10 VCE=10V DC CURRENT GAIN : hFE 0.3 0.2 Ta=125°C 25°C 100 0.1 10 0.1 10 100 1000 COLLECTOR CURRENT : Ic(mA) 1.0 Fig.2 Collector-emitter saturation voltage vs. collector current AC CURRENT GAIN : hFE Ta=25°C VCE=10V f=1kHz 100 1.0 10 COLLECTOR CURRENT : Ic(mA) 100 1000 Fig.4 DC current gain vs. collector current(ΙΙ) 1000 10 0.1 10 COLLECTOR CURRENT : Ic(mA) 100 Fig.5 AC current gain vs. collector current 1000 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) 0 1.0 −55°C 1.8 1.6 Ta=25°C IC / IB=10 1.2 0.8 0.4 0 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.6 Base-emitter saturation voltage vs. collector current UMT2222A / SST2222A / MMST2222A / PN2222A 1.6 1000 Ta=25°C IC / IB=10 1.2 0.4 VCC=30V 10V 10 1 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.7 Grounded emitter propagation characteristics 1000 Fig.8 Turn-on time vs. collector current 1000 Ta=25°C VCC=30V IC=10IB1=10IB2 FALL TIME : tf(ns) STORAGE TIME : Ts(ns) Ta=25°C VCC=30V IC=10IB1=10IB2 100 100 10 1.0 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 200MHz 10 1000 CURRENT GAIN-BANDWIDTH PRODUCT(MHz) Ta=25°C 100MHz 250MHz 300MHz 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.11 Fall time vs. collector current Fig.10 Storage time vs. collector current 100 Ta=25°C VCE=10V 100 1 250MHz 0.1 1 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.13 Gain bandwidth product 5 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) 10 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.14 Gain bandwidth product vs. collector current 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.9 Rise time vs. collector current 100 CAPACITANCE(pF) 0 COLLECTOR-EMITTER VOLTAGE : VCE(V) Ta=25°C VCC=30V IC / IB=10 100 100 0.8 500 RISE TIME : tr(ns) Ta=25°C VCE=10V 1.8 TURN ON TIME : ton(ns) BASE EMITTER VOLTAGE : VBE(ON)(V) Transistors Ta=25°C f=1MHz Cib Cob 10 1 0.1 1.0 10 REVERSE BIAS VOLTAGE(V) 100 Fig.12 Input / output capacitance vs. voltage