ON MGB15N35CL Ignition igbt 15 amps, 350 volts n-channel to-220 and d2pak Datasheet

MGP15N35CL,
MGB15N35CL
Preferred Device
Ignition IGBT
15 Amps, 350 Volts
N−Channel TO−220 and D2PAK
http://onsemi.com
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
• Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition
System Applications
• High Pulsed Current Capability up to 50 A
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• Optional Gate Resistor (RG)
15 AMPERES
350 VOLTS (Clamped)
VCE(on) @ 10 A = 1.8 V Max
N−Channel
C
RG
G
RGE
4
E
4
1
MAXIMUM RATINGS (−55°C ≤ TJ ≤ 175°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
380
VDC
Collector−Gate Voltage
VCER
380
VDC
Gate−Emitter Voltage
VGE
22
VDC
IC
15
50
ADC
AAC
Rating
Collector Current−Continuous
@ TC = 25°C − Pulsed
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD
800
V
PD
150
1.0
Watts
W/°C
TJ, Tstg
−55 to
175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
Characteristic
Symbol
Single Pulse Collector−to−Emitter Avalanche
Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A, L
= 2.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.2 A, L
= 2.0 mH, Starting TJ = 150°C
EAS
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 5
3
1
D2PAK
CASE 418B
STYLE 4
TO−220AB
CASE 221A
STYLE 9
2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
3
4
Collector
4
Collector
kV
8.0
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE
CHARACTERISTICS (−55°C ≤ TJ ≤ 175°C)
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, L = 3.0 mH,
Pk IL = 25.8 A, Starting TJ = 25°C
2
Value
Unit
G15N35CL
YWW
1
Gate
3
Emitter
2
Collector
mJ
1
Gate
3
Emitter
2
Collector
G15N35CL = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
300
200
EAS(R)
G15N35CL
YWW
mJ
1000
Device
Package
Shipping
MGP15N35CL
TO−220
50 Units/Rail
MGB15N35CLT4
D2PAK
800 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MGP15N35CL/D
MGP15N35CL, MGB15N35CL
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
Unit
°C/W
RθJC
1.0
TO−220
RθJA
62.5
D2PAK (Note 1)
RθJA
50
TL
275
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BVCES
IC = 2.0 mA
TJ = −40°C to
150°C
320
350
380
VDC
IC = 10 mA
TJ = −40°C to
150°C
330
360
380
TJ = 25°C
−
1.5
20
TJ = 150°C
−
10
40*
TJ = −40°C
−
0.7
1.5
TJ = 25°C
−
0.35
1.0
TJ = 150°C
−
8.0
15*
TJ = −40°C
−
0.05
0.5
TJ = 25°C
25
33
50
TJ = 150°C
25
36
50
TJ = −40°C
25
30
50
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
Reverse Collector−Emitter Leakage Current
Reverse Collector−Emitter Clamp Voltage
Gate−Emitter Clamp Voltage
ICES
VCE = 300 V,
VGE = 0 V
IECS
VCE = −24 V
BVCES(R)
IC = −75 mA
μADC
mA
VDC
BVGES
IG = 5.0 mA
TJ = −40°C to
150°C
17
20
22
VDC
IGES
VGE = 10 V
TJ = −40°C to
150°C
384
600
1000
μADC
Gate Resistor (Optional)
RG
−
TJ = −40°C to
150°C
−
70
−
Ω
Gate Emitter Resistor
RGE
−
TJ = −40°C to
150°C
10
16
26
kΩ
TJ = 25°C
1.4
1.7
2.0
VDC
TJ = 150°C
0.75
1.1
1.4
TJ = −40°C
1.6
1.9
2.1*
−
−
4.4
−
Gate−Emitter Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGE(th)
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient
−
−
(Negative)
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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2
mV/°C
MGP15N35CL, MGB15N35CL
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
1.0
1.3
1.6
VDC
TJ = 150°C
0.9
1.2
1.5
TJ = −40°C
1.1
1.4
1.7*
TJ = 25°C
1.3
1.6
1.9
TJ = 150°C
1.2
1.5
1.8
TJ = −40°C
1.3
1.6
1.9*
TJ = 25°C
1.6
1.95
2.25
TJ = 150°C
1.7
2.0
2.3*
TJ = −40°C
1.6
1.9
2.2
ON CHARACTERISTICS (continued) (Note 3)
Collector−to−Emitter On−Voltage
VCE(on)
IC = 6.0 A,
VGE = 4.0 V
IC = 10 A,
VGE = 4.0 V
IC = 15 A,
VGE = 4.0 V
Collector−to−Emitter On−Voltage
Forward Transconductance
TJ = 25°C
1.9
2.2
2.5
IC = 20 A,
VGE = 4.0 V
TJ = 150°C
2.1
2.4
2.7*
TJ = −40°C
1.85
2.15
2.45
TJ = 25°C
2.1
2.5
2.9
IC = 25 A,
VGE = 4.0 V
TJ = 150°C
2.5
2.9
3.3*
TJ = −40°C
2.0
2.4
2.8
VCE(on)
IC = 10 A, VGE = 4.5 V
TJ = 150°C
−
1.5
1.8
VDC
gfs
VCE = 5.0 V, IC = 6.0 A
TJ = −40°C to
150°C
8.0
15
25
Mhos
−
1000
1300
pF
VCC = 25 V, VGE = 0 V
f = 1.0 MHz
TJ = −40°C to
150°C
−
100
130
−
5.0
8.0
TJ = 25°C
−
4.0
10
TJ = 150°C
−
4.5
10
TJ = 25°C
−
7.0
10
TJ = 150°C
−
10
15*
TJ = 25°C
−
4.0
10
TJ = 150°C
−
4.5
10
TJ = 25°C
−
13
20
TJ = 150°C
−
16
20
TJ = 25°C
−
1.0
1.5
TJ = 150°C
−
1.0
1.5
TJ = 25°C
−
4.5
6.0
TJ = 150°C
−
5.0
6.0
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS (Note 3)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−Off Delay Time (Resistive)
td(off)
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, L = 300 μH
tf
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, L = 300 μH
td(off)
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 46 Ω,
Fall Time (Resistive)
tf
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 46 Ω,
Turn−On Delay Time
td(on)
VCC = 10 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 1.5 Ω
Rise Time
tr
VCC = 10 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 1.5 Ω
3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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3
μSec
μSec
μSec
MGP15N35CL, MGB15N35CL
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
50
IC, COLLECTOR CURRENT (AMPS)
VGE = 10.0 V
VGE = 4.5 V
VGE = 5.0 V
40
VGE = 4.0 V
30
TJ = 25°C
VGE = 3.5 V
20
VGE = 3.0 V
10
0
VGE = 2.5 V
0
1
3
2
5
4
7
6
IC, COLLECTOR CURRENT (AMPS)
VGE = 5.0 V
40
VGE = 4.0 V
30
TJ = 150°C
VGE = 3.0 V
10
VGE = 2.5 V
0
TJ = 150°C
10
TJ = 25°C
TJ = −40°C
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
2
3
4
5
6
7
8
4.0
3.5
VGE = 5.0 V
3.0
IC = 25 A
IC = 20 A
2.5
2.0
1.5
1.0
IC = 15 A
0.5
0.0
−50
IC = 5 A
IC = 10 A
−25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector−to−Emitter Saturation
Voltage vs. Junction Temperature
10000
2.5
THRESHOLD VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
1
Figure 2. Output Characteristics
15
Ciss
1000
Coss
100
10
1
VGE = 3.5 V
20
Figure 1. Output Characteristics
VCE = 10 V
0
VGE = 4.5 V
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
20
0
50
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
30
25
VGE = 10.0 V
0
8
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
60
Crss
0
20
40
60
80
100 120
Mean + 4 σ
2.0
1.5
Mean − 4 σ
1.0
0.5
0.0
−50
140 160 180 200
IC = 1 mA
Mean
−25
0
25
50
75
100
125
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
TEMPERATURE (°C)
Figure 5. Capacitance Variation
Figure 6. Threshold Voltage vs. Temperature
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4
150
MGP15N35CL, MGB15N35CL
30
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
25
IL, LATCH CURRENT (AMPS)
IL, LATCH CURRENT (AMPS)
30
20
T = 25°C
15
10
T = 150°C
5
0
0
2
4
6
8
L = 3.0 mH
10
L = 6.0 mH
5
0
25
50
75
100
Figure 8. Minimum Open Secondary Latch
Current vs. Temperature
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
T = 25°C
25
20
T = 150°C
10
5
0
2
4
8
6
8
20
L = 3.0 mH
15
L = 6.0 mH
10
5
0
25
50
75
100
125
150
INDUCTOR (mH)
TEMPERATURE (°C)
Figure 9. Typical Open Secondary Latch
Current vs. Inductor
Figure 10. Typical Open Secondary Latch
Current vs. Temperature
175
14
VCC = 300 V
VGE = 5.0 V
RG = 1000 Ω
IC = 10 A
L = 300 μH
tf
12
tf
td(off)
6
4
2
0
−50
25
175
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
L = 2.0 mH
0
−50 −25
10
SWITCHING TIME (μS)
10
150
Figure 7. Minimum Open Secondary Latch
Current vs. Inductor
30
15
125
TEMPERATURE (°C)
IL, LATCH CURRENT (AMPS)
IL, LATCH CURRENT (AMPS)
15
INDUCTOR (mH)
12
SWITCHING TIME (μS)
L = 2.0 mH
20
0
−50 −25
10
30
0
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
25
10
VCC = 300 V
VGE = 5.0 V
RG = 1000 Ω
TJ = 150°C
L = 300 μH
8
6
td(off)
4
2
−25
0
25
50
75
100
125
0
150
0
2
4
6
8
10
12
14
TC, CASE TEMPERATURE (°C)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Switching Speed vs. Case
Temperature
Figure 12. Switching Speed vs. Collector
Current
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5
16
MGP15N35CL, MGB15N35CL
14
10
8
12
SWITCHING TIME (μS)
12
SWITCHING TIME (μS)
14
VCC = 300 V
VGE = 5.0 V
TJ = 25°C
IC = 10 A
L = 300 μH
tf
6
td(off)
4
tf
10
VCC = 300 V
VGE = 5.0 V
TJ = 150°C
IC = 10 A
L = 300 μH
8
6
td(off)
4
2
2
0
250
750
500
0
250
1000
750
500
1000
RG, EXTERNAL GATE RESISTANCE (Ω)
RG, EXTERNAL GATE RESISTANCE (Ω)
Figure 13. Switching Speed vs. External Gate
Resistance
Figure 14. Switching Speed vs. External Gate
Resistance
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
10
Duty Cycle = 0.5
1
0.2
0.1
0.05
0.02
0.1
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T1
P(pk)
t1
Single Pulse
t2
DUTY CYCLE, D = t1/t2
0.01
0.00001
0.0001
0.001
0.01
0.1
TJ(pk) − TA = P(pk) RθJA(t)
RθJC ≅ R(t) for t ≤ 0.2 s
1
t,TIME (S)
Figure 15. Transient Thermal Resistance
(Non−normalized Junction−to−Ambient mounted on
fixture in Figure 16)
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6
10
100
1000
MGP15N35CL, MGB15N35CL
1.5″
4″
4″
0.125″
4″
Figure 16. Test Fixture for Transient Thermal Curve
(48 square inches of 1/8, thick aluminum)
100
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
100
DC
100 μs
10
1 ms
10 ms
1
100 ms
0.1
0.01
1
10
100
DC
10
100 μs
1
1 ms
10 ms
100 ms
0.1
0.01
1
1000
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 17. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
Figure 18. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 1255C)
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7
MGP15N35CL, MGB15N35CL
100
t1 = 1 ms, D = 0.05
DC
t1 = 2 ms, D = 0.10
10
t1 = 3 ms, D = 0.30
1
P(pk)
0.1
t1
t2
DUTY CYCLE, D = t1/t2
0.01
1
10
100
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
100
t1 = 2 ms, D = 0.10
10
t1 = 3 ms, D = 0.30
1
P(pk)
t1
0.1
t2
DUTY CYCLE, D = t1/t2
0.01
1
1000
t1 = 1 ms, D = 0.05
DC
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 19. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
Figure 20. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 1255C)
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8
MGP15N35CL, MGB15N35CL
PACKAGE DIMENSIONS
TO−220 THREE−LEAD
TO−220AB
CASE 221A−09
ISSUE AA
SEATING
PLANE
−T−
B
F
T
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 9:
PIN 1.
2.
3.
4.
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9
GATE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
MGP15N35CL, MGB15N35CL
PACKAGE DIMENSIONS
D2PAK
CASE 418B−03
ISSUE D
C
E
−B−
V
4
1
2
3
A
S
−T−
SEATING
PLANE
K
J
G
D 3 PL
0.13 (0.005)
H
M
T B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
G
H
J
K
S
V
INCHES
MIN
MAX
0.340
0.380
0.380
0.405
0.160
0.190
0.020
0.035
0.045
0.055
0.100 BSC
0.080
0.110
0.018
0.025
0.090
0.110
0.575
0.625
0.045
0.055
STYLE 4:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
8.64
9.65
9.65
10.29
4.06
4.83
0.51
0.89
1.14
1.40
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
14.60
15.88
1.14
1.40
GATE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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