YIXIN ES3CF Surface mount super fast rectifier Datasheet

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ES3AF THRU ES3JF
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
FEATURES
SMAF
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Super fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds at terminals
Glass passivated chip junction
Cathode Band
Top View
0.110(2.80)
0.094(2.40)
0.059(1.50)
0.051(1.30)
0.144(3.65)
0.128(3.25)
0.012(0.30)
0.006(0.15)
0.055(1.40)
0.043(1.10)
0.047(1.20)
0.028(0.70)
MECHANICAL DATA
Case: JEDEC SMAF molded plastic body over passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.0018 ounce, 0.064 grams
0.189(4.80)
0.173(4.40)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
TA=25 C
at rated DC blocking voltage
TA=125 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
VRRM
VRMS
VDC
ES3AF ES3BF ES3CF ES3DF ES3EF ES3GF ES3JF
50
35
50
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
VOLTS
VOLTS
VOLTS
I(AV)
3.0
Amps
IFSM
50.0
Amps
VF
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
100
70
100
UNITS
0.95
1.25
1.7
Volts
IR
5.0
200.0
µA
trr
35
ns
CJ
RθJA
TJ,TSTG
60.0
40.0
-50 to +150
pF
C/W
C
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
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RATINGS AND CHARACTERISTIC CURVES ES3AF THRU ES3JF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
t rr
+0.5
D.U.T
+
PULSE
GENERATOR
Note 2
25Vdc
approx
0
-
-0.25
1 ohm
OSCILLOSCOPE
Note 1
NonInductive
-1.0
Note:1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
3.5
300
3.0
100
I R - Reverse Current ( μ A)
Average Forward Current (A)
Fig.2 Maximum Average Forward Current Rating
2.4
1.8
1.2
Single phase half wave resistive
or inductive P.C.B mounted on
0.315×0.315"(8.0×8.0mm )
pad areas
0.6
T J =125°C
10
T J =75°C
1.0
T J =25°C
0.1
0.0
25
50
75
100
125
150
175
0
Lead Temperature (°C)
80
60
100
% of PIV.VOLTS
Fig.5 Typical Junction Capacitance
Fig.4 Typical Forward Characteristics
45
10
T J =25°C
Junction Capacitance ( pF)
Instaneous Forward Current (A)
40
20
ES3AF
1.0
ES3EF
ES3JF
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
Instaneous Forward Voltage (V)
40
35
30
25
20
T J =25°C
f = 1.0MHz
V sig = 50mV p-p
15
10
0.1
1
10
Reverse Voltage (V)
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100
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