BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in the MiniMELF case with type designation LL41. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter Repetitive peak reverse voltage o Forward continuous current at Tamb=25 C Symbol Value Unit VRRM 100 Volts IF Repetitive peak forward current at tp<1s, @<0.5, Tamb=25oC IFRM o Surge forward current at tp=10ms, Tamb=25 C IFSM o 100 (1) mA 350 (1) mA 750 (1) mA Power dissipation at Tamb=25 C Ptot 400 (1) Thermal resistance junction to ambient air RθJA 300 (1) Junction temperature Ambient operating temperature range Storage temperature range mW o C/W Tj 125 o C Tamb -65 to +125 o C TS -65 to +150 o C Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Reverse breakdown voltage (2) Symbol Test Condition Min. Typ. Max. Unit V(BR)R IR=100uA 100 110 - Volts O Leakage current (2) Forward voltage (2) Capacitance Reverse recovery time Notes: IR VR=50V, Tj=25 C VR=50V, Tj=100OC - - 100 20 nA uA VF IF=1mA IF=200mA - 0.40 - 0.45 1.0 Volt Ctot VR=1V, f=1MHz - 2 - pF trr IF=10mA, IR=10mA, Irr=1mA, RL=100Ω - 5 - ns 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature 2. Pulse test, tp=300uS 678 RATINGS AND CHARACTERISTIC CURVES 679