DONGGUAN NANJING ELECTRONICS LTD., SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) SOT 23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 MAXIMUM RATINGS (Ta=25 Symbol 2. EMITTER unless otherwise noted) Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 /W Tj Junction Temperature 150 Tstg Storage Temperature R JA -55 ELECTRICAL CHARACTERISTICS (Ta=25 Parameter 3. COLLECTOR +150 unless otherwise specified) Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage ICBO IEBO VEB=4V, IC=0 hFE(1) * VCE=5V, IC=1mA 80 hFE(2) * VCE=5V, IC=10mA 100 hFE(3) * VCE=5V, IC=50mA 50 50 nA 50 nA 300 VCE(sat)1 * IC=10mA, IB=1mA 0.15 V VCE(sat)2 * IC=50mA, IB=5mA 0.2 V * VBE(sat)1 IC=10mA, IB=1mA 1 V * VBE(sat)2 IC=50mA, IB=5mA 1 V 300 MHz 6 pF Transition frequency Collector output capacitance VCB=120V, I E=0 fT Cob VCE=10V,IC=10mA, f=100MHz 100 V CB=10V, I E=0, f=1MHz *Pulse test: pulse width 300 s, duty cycle 2.0%. CLASSIFICATION OF hFE (2) RANK L H RANGE 100-200 200-300 Typical Characteristics MMBT5551 hFE —— IC Static Characteristic 18 500 90uA 80uA 15 COMMON EMITTER VCE=5V COMMON EMITTER Ta=25 Ta=100 70uA 12 Ta=25 60uA 100 50uA 9 40uA 6 30uA IB=20uA 3 0 10 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1.0 VCE 12 1 10 (V) COLLECTOR CURRENT VCEsat —— IC IC 100 200 100 200 (mA) IC 0.3 =10 =10 0.8 0.1 Ta=25 Ta=100 0.6 Ta=100 Ta=25 0.4 0.01 0.2 0.1 1 10 COLLECTOR CURRENT VBE —— 100 IC 1 200 10 COLLECTOR CURRENT (mA) IC Cob / Cib 100 200 —— IC (mA) VCB / VEB COMMON EMITTER VCE=5V 100 f=1MHz IE=0 / IC=0 Ta=25 Cib Ta=100 Ta=25 10 10 Cob 1 0.2 0.4 0.6 0.8 BASE-EMITTER VOLTAGE fT —— 1.0 1 0.1 1 VBE (V) 10 REVERSE VOLTAGE IC PC 0.4 150 —— V 20 (V) Ta VCE=10V Ta=25 0.3 100 0.2 0.1 0.0 50 1 10 3 COLLECTOR CURRENT IC (mA) 20 30 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 ( ) 150