DSK MBR2545CT Schottky barrier rectifier Datasheet

Diode Semiconductor Korea MBR2530CT---MBR25100CT
VOLTAGE RANGE: 30 - 100 V
CURRENT: 30 A
SCHOTTKY BARRIER RECTIFIERS
FEATURES
TO-220AB
2.8± 0.1
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
4.5± 0.2
10.2± 0.2
1.4± 0.2
φ 3.8± 0.15
19.0± 0.5
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
1
8.9± 0.2
Metal s ilicon junction, m ajority carrier conduction.
PIN
2 3
2.6± 0.2
3.5± 0.3
13.8± 0.5
MECHANICAL DATA
Cas e:JEDEC TO-220AB,m olded plas tic body
0.9± 0.1
Term inals :Solderable per MIL-STD-750,
1 1
0.5± 0.1
2.5± 0.1
Method 2026
Polarity: As m arked
PIN 1
Positive CT
Pos ition: Any
PIN 1
PIN 1
PIN 3
CASE
PIN 2
PIN 3
Negative CT
Suffix "A"
CASE
PIN 2
PIN 3
Doubler
Suffix "D"
CASE
PIN 2
Dimensions in millimeters
Weight: 0.071ounce, 2.006 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR MBR
MBR MBR MBR MBR MBR MBR
UNITS
2530CT 2535CT 2540CT 2545CT 2550CT 2560CT 2580CT 25100CT
Maximum recurrent peak reverse voltage
V RRM
30
35
40
45
50
60
80
100
V
Maximum RMS V oltage
V RMS
21
25
28
32
35
42
56
70
V
Maximum DC blocking voltage
V DC
30
35
40
45
50
60
80
100
V
Maximum average forw ard total device
m rectified current @TC = 130°C
IF(AV)
30
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
IFSM
150
A
Maximum forward
(IF=15A,TC=25
)
voltage
(I F=15A,TC=125
)
(Note 1)
(IF=30A ,TC=25
)
(IF=30A,TC=125
)
Maximum reverse current
at rated DC blocking voltage
@TC =25
@TC =125
VF
IR
-
0.75
0.85
-
0.65
-
0.82
0.73
-
-
0.2
1.0
40
50
mA
Maximum thermal resistance (Note2)
R θJC
1.5
Operating junction temperature range
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
Storage temperature range
V
/W
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
www.diode.kr
MBR2530CT---MBR25100CT
Diode Semiconductor Korea
FIG.2 -- FORWARD DERATING CURVE
120
8.3ms Single Half Sine Wave
TJ=125
90
60
30
0
1
10
100
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
150
AMPERES
PEAK FORWARD SURGE CURRENT,
FIG.1 -- PEAK FORWARD SURGE CURRENT
40
30
20
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
10
0
0
25
NUMBER OF CYCLES AT 60HZ
Pulse width = 300 µs
1% Duty Cycle
100 TJ=125
TJ =25
10
1
MBR2530CT-MBR2545CT
MBR2550CT-MBR2560CT
MBR2580CT-MBR25100CT
.1
.3
.4
.5 .6
.7
.8
.9 1.0 1.1 1.2 1.3 1.4 1.5
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
75
100
125
150
175
CASE TEMPERATURE,
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
500
AMPERES
INSTANTANEOUS FORWARD CURRENT,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
50
10
MBR2530CT-MBR2560CT
MBR2580CT-MBR25100CT
1.0
MBR2530CT-MBR2560CT
.1
MBR2580CT-MBR25100CT
.01
TC=125℃
TC=25℃
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
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