ON NTTD4401F Power mosfet and schottky diode Datasheet

NTTD4401F
FETKYt Power MOSFET
and Schottky Diode
−20 V, −3.3 A P−Channel with 20 V,
1.0 A Schottky Diode, Micro8t Package
http://onsemi.com
The FETKY product family incorporates low RDS(on), true logic level
MOSFETs packaged with industry leading, low forward drop, low
leakage Schottky Barrier Diodes to offer high efficiency components in
a space saving configuration. Independent pinouts for TMOS and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
MOSFET PRODUCT SUMMARY
•
•
ID Max
70 mW @ −4.5 V
−3.3 A
100 mW @ −2.7 V
−2.7 A
−20 V
Features
• Low VF and Low Leakage Schottky Diode
• Lower Component Placement and Inventory Costs along with Board
RDS(on) Typ
V(BR)DSS
SCHOTTKY DIODE SUMMARY
VR Max
IF Max
VF Max
20 V
2.0 A
600 mV @ IF = 2.0 A
Space Savings
Logic Level Gate Drive – Can be Driven by Logic ICs
Pb−Free Package is Available
A
S
Applications
•
•
•
•
Buck Converter
Synchronous Rectification
Low Voltage Motor Control
Load Management in Battery Packs, Chargers, Cell Phones, and
other Portable Products
G
D
C
P−Channel MOSFET
Schottky Diode
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
−10
V
ID
3.3
A
TA = 25°C
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
TA = 100°C
Steady
State
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain
Current
TA = 25°C
PD
1.42
W
TA = 25°C
ID
2.4
A
TA = 25°C
W
IDM
10
A
TJ, TSTG
−55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy Starting TA = 25°C (t v 10 s)
EAS
150
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.172 in sq).
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 5
Micro8
CASE 846A
1
A AS G
0.78
Operating Junction and
Storage Temperature
WW
BG G
G
1
1.5
PD
t = 10 ms
C CD D
8
8
2.1
TA = 100°C
Steady
State
MARKING DIAGRAM &
PIN ASSIGNMENT
1
BG
= Specific Device Code
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTTD4401FR2
NTTD4401FR2G
Package
Shipping †
Micro8
4000/Tape & Reel
Micro8
(Pb−Free)
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTD4401F/D
NTTD4401F
SCHOTTKY DIODE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
V
20
V
Peak Repetitive Reverse Voltage
Average Forward Current (Rated VR, TA = 100°C)
IO
1.0
A
Peak Repetitive Forward Current (Note 3)
IFRM
2.0
A
Non−Repetitive Peak Surge Current (Note 4)
IFSM
20
A
THERMAL RESISTANCE RATINGS
FET
Rating
Schottky
Max
Symbol
Unit
Junction−to−Ambient – Steady State (Note 5)
RqJA
88
135
°C/W
Junction−to−Ambient – Steady State (Note 6)
RqJA
160
250
°C/W
MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)DSS
VGS = 0 V
−20
−
−
V
IDSS
VGS = 0 V, VDS = −16 V
−
−
−1.0
mA
VGS = 0 V, TJ = 125°C, VDS = −16 V
−
−
−25
IGSS
VDS = 0 V, VGS = ±10 V
−
−
±100
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current (Note 7)
Gate−to−Source Leakage Current
nA
ON CHARACTERISTICS
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS = VDS, ID = −250 mA
−0.5
−
−1.5
V
VGS(TH)/TJ
−
−
2.5
−
mV/°C
RDS(on)
VGS = −4.5 V, ID = −3.3 A
−
70
90
mW
VGS = −2.5 V, ID = −1.2 A
−
100
150
VDS = −10 V, ID = −2.7 A
−
4.2
−
S
−
550
750
pF
−
200
300
−
50
175
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
VGS = 0 V, f = 1.0 MHz,
VDS = −16 V
QG(TOT)
nC
−
10
18
−
1.5
3.0
QGD
−
5.0
10
td(ON)
−
11
20
−
35
65
−
33
60
−
29
55
−
−0.88
−1.0
V
−
37
50
ns
−
16
−
−
21
−
−
0.025
0.05
Gate−to−Source Gate Charge
QGS
Gate−to−Drain “Miller’’ Charge
VGS = −4.5 V, VDS = −16 V,
ID = −3.3 A
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
tr
td(OFF)
Fall Time
VGS = −4.5 V, VDD = −10 V,
ID = −3.3 A, RG = 6.0 W
tf
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
3.
4.
5.
6.
7.
VGS = 0 V, IS = −2.0 A
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −3.3 A
QRR
−
Rated VR, square wave, 20 kHz, TA = 105°C.
Surge applied at rated load conditions, half−wave, single phase, 60 Hz.
Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq).
Body diode leakage current.
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2
nC
NTTD4401F
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Reverse Breakdown Voltage
BV
IR = 1.0 mA
Reverse Leakage Current
IR
Forward Voltage
VF
VR = 20 V
IF = 1.0 A
IF = 2.0 A
Voltage Rate of Change
dV/dt
VR = 20 V
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3
Max
Unit
20
−
−
V
TA = 25°C
−
−
0.05
mA
TA = 125°C
−
−
10
TA = 25°C
−
−
0.5
TA = 125°C
−
−
0.39
TA = 25°C
−
−
0.6
TA = 125°C
−
−
0.53
−
10,000
−
V
V/ms
NTTD4401F
TYPICAL ELECTRICAL CHARACTERISTICS
4
5
VGS = −10 V
VGS = −4.5 V
VGS = −2.5 V
3
TJ = 25°C
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
VGS = −2.1 V
VGS = −1.9 V
2
VGS = −1.7 V
1
VGS = −1.5 V
0
4
3
2
TJ = 25°C
1
TJ = 100°C
2
4
6
8
10
3
2.5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.15
0.1
0.05
0
2
4
6
8
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.12
TJ = 25°C
0.1
VGS = −2.7 V
0.08
VGS = −4.5 V
0.06
0.04
1
1.5
2
2.5
3
3.5
4
4.5
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1000
VGS = 0 V
ID = −3.3 A
VGS = −4.5 V
TJ = 125°C
−IDSS, LEAKAGE (nA)
100
1.2
1
0.8
0.6
−50
2
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ = 25°C
1.4
1.5
1
0.2
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = 55°C
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS > = −10 V
TJ = 100°C
10
TJ = 25°C
1
0.1
0.01
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
0
Figure 5. On−Resistance Variation with
Temperature
4
8
12
16
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
20
NTTD4401F
C, CAPACITANCE (pF)
VDS = 0 V
1200
VGS = 0 V
Ciss
TJ = 25°C
900
Crss
Ciss
600
300
Coss
Crss
0
10
5
0
−VGS −VDS
5
10
15
20
5
20
18
QT
16
4
14
3
Q1
10
Q2
8
2
6
1
ID = −3.3 A
TJ = 25°C
VDS
2
0
0
2
4
6
8
10
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
td (off)
VDD = −10 V
ID = −1.2 A
VGS = −2.7 V
t, TIME (ns)
tr
tr
tf
td (on)
10
tf
td (off)
VDD = −10 V
ID = −3.3 A
VGS = −4.5 V
td (on)
1.0
10
10
1.0
14
12
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
4
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
t, TIME (ns)
12
VGS
100
RG, GATE RESISTANCE (W)
1.0
10
RG, GATE RESISTANCE (W)
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
−IS, SOURCE CURRENT (AMPS)
2
1.6
VGS = 0 V
TJ = 25°C
di/dt
IS
trr
1.2
ta
tb
TIME
0.8
0.25 IS
tp
IS
0.4
0
0.4
0.5
0.6
0.7
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1500
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
0.9
1
Figure 12. Diode Reverse Recovery Waveform
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage
vs. Current
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5
NTTD4401F
Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
1
D = 0.5
0.2
0.1
Normalized to R∅ja at Steady State (1 inch pad)
0.1
0.0125 W 0.0563 W
0.110 W
0.273 W
0.113 W
0.436 W
2.93 F
152 F
261 F
0.05
0.02
0.01
0.021 F
0.137 F
1.15 F
Single Pulse
0.01
1E−03
1E−02
1E−01
1E+00
1E+03
1E+02
1E+03
t, TIME (s)
Figure 13. FET Thermal Response
10
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
TJ = 125°C
1.0
85°C
25°C
−40 °C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
TJ = 125°C
85°C
1.0
25°C
0.1
0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 14. Typical Forward Voltage
Figure 15. Maximum Forward Voltage
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6
NTTD4401F
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
1E−2
TJ = 125°C
1E−3
85°C
1E−4
1E−5
25°C
1E−6
1E−7
0
5.0
10
15
1E−1
1E−3
1E−4
25°C
1E−5
1E−6
20
TJ = 125°C
1E−2
0
5.0
VR, REVERSE VOLTAGE (VOLTS)
IO , AVERAGE FORWARD CURRENT (AMPS)
100
10
15
1.6
dc
1.2
SQUARE WAVE
1.0
Ipk/Io = p
0.8
Ipk/Io = 5.0
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
0
20
FREQ = 20 kHz
1.4
20
VR, REVERSE VOLTAGE (VOLTS)
40
60
0.6
dc
SQUARE
WAVE
Ipk/Io = p
Ipk/Io = 5.0
0.4
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
0.1
0
0
100
120
Figure 19. Current Derating
0.7
0.5
80
TA, AMBIENT TEMPERATURE (°C)
Figure 18. Typical Capacitance
PFO , AVERAGE POWER DISSIPATION (WATTS)
C, CAPACITANCE (pF)
TYPICAL CAPACITANCE AT 0 V = 170 pF
10
20
Figure 17. Maximum Reverse Current
1000
5.0
15
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. Typical Reverse Current
0
10
0.5
1.0
1.5
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 20. Forward Power Dissipation
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7
2.0
140
160
NTTD4401F
PACKAGE DIMENSIONS
Micro8t
CASE 846A−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A−01 OBSOLETE, NEW STANDARD 846A−02.
D
HE
PIN 1 ID
E
DIM
A
A1
b
c
D
E
e
L
HE
e
b 8 PL
0.08 (0.003)
T B
M
S
A
S
SEATING
−T− PLANE
0.038 (0.0015)
MILLIMETERS
NOM
MAX
−−
1.10
0.08
0.15
0.33
0.40
0.18
0.23
3.00
3.10
3.00
3.10
0.65 BSC
0.40
0.55
0.70
4.75
4.90
5.05
MIN
−−
0.05
0.25
0.13
2.90
2.90
INCHES
NOM
−−
0.003
0.013
0.007
0.118
0.118
0.026 BSC
0.016
0.021
0.187
0.193
MIN
−−
0.002
0.010
0.005
0.114
0.114
MAX
0.043
0.006
0.016
0.009
0.122
0.122
0.028
0.199
A
A1
L
c
SOLDERING FOOTPRINT*
8X
1.04
0.041
0.38
0.015
3.20
0.126
6X
8X
4.24
0.167
0.65
0.0256
5.28
0.208
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
FETKY and Micro8 are registered trademarks of International Rectifier Corporation.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NTTD4401F/D