PHILIPS BLF6G10L-260PRN Power ldmos transistor Datasheet

BLF6G10L-260PRN;
BLF6G10LS-260PRN
Power LDMOS transistor
Rev. 2 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
260 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Mode of operation
f
2-carrier W-CDMA
[1]
D
ACPR
(dB)
(%)
(dBc)
22.0
26.5
39[1]
VDS
PL(AV)
Gp
(MHz)
(V)
(W)
920 to 960
28
40
Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
 Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 28 V and an IDq of 1800 mA:
 Average output power = 40 W
 Power gain = 22.0 dB
 Efficiency = 26.5 %
 ACPR = 39 dBc
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (700 MHz to 1000 MHz)
 Internally matched for ease of use
 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
BLF6G10L(S)-260PRN
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
 RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 700 MHz to 1000 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF6G10L-260PRN (SOT539A)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
2
1
5
3
3
4
5
4
[1]
source
2
sym117
BLF6G10LS-260PRN (SOT539B)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
1
2
5
3
3
4
[1]
source
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
BLF6G10L-260PRN
Name
Description
Version
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
SOT539A
BLF6G10LS-260PRN -
earless flanged balanced LDMOST ceramic package; SOT539B
4 leads
BLF6G10L-260PRN_LS-260PRN
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Product data sheet
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4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+13
V
ID
drain current
-
64
A
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-case)
thermal resistance from junction to case
Tcase = 80 C; PL = 40 W
0.28
K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 C; values per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 1.8 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 180 mA
1.4
1.9
2.4
V
VGSq
gate-source quiescent voltage
VDS = 28 V;
ID = 1000 mA
1.45
2.1
2.55
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
24.1
30
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 9 A
7.02
12
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 6.3 A
0.053 0.1
0.165 
7. Application information
Table 7.
2-carrier W-CDMA Application information
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
1 to 64 DPCH; f1 = 917.5 MHz; f2 = 922.5 MHz; f3 = 957.5 MHz; f4 = 962.5 MHz; RF performance at
VDS = 28 V; IDq = 1800 mA; Tcase = 25 C; unless otherwise specified.
Symbol
Parameter
Conditions
PL(AV)
average output power
Gp
power gain
PL(AV) = 40 W
BLF6G10L-260PRN_LS-260PRN
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Product data sheet
Rev. 2 — 12 July 2013
Min
Typ
Max
Unit
-
40
-
W
19.8
22.0
-
dB
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Table 7.
2-carrier W-CDMA Application information …continued
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
1 to 64 DPCH; f1 = 917.5 MHz; f2 = 922.5 MHz; f3 = 957.5 MHz; f4 = 962.5 MHz; RF performance at
VDS = 28 V; IDq = 1800 mA; Tcase = 25 C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RLin
input return loss
PL(AV) = 40 W
-
10.0 6.0
dB
D
drain efficiency
PL(AV) = 40 W
25.0
26.5
-
%
ACPR
adjacent channel power ratio
PL(AV) = 40 W
-
39
35
dBc
Table 8.
1 carrier W-CDMA Application information
Class-AB production test circuit; PAR 7.5 dB at 0.01 % probability on CCDF; 3 GPP test model 1;
1 to 64 DPCH; f1 = 960 MHz; RF performance at VDS = 28 V; Idq 1800 mA; Tcase = 25 C; unless
otherwise specified.
Symbol Parameter
PAR0
Conditions
output peak-to-average
ratio
Min
PL(AV) = 125 W at 0.01 % 3.8
probability on CCDF
Typ
Max
Unit
4.3
-
dB
7.1 Ruggedness in class-AB operation
The BLF6G10L-260PRN and BLF6G10L-260PRN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 28 V; IDq = 1800 mA; PL = 260 W (CW); f = 920 MHz to 960 MHz.
7.2 Impedance information
Table 9.
Typical impedance per section
IDq = 950 mA; main transistor VDS = 28 V
ZS[1]

f
MHz
ZL[1]

920
0.7  j1.0
1.4 + j0.6
940
1.1  j1.3
1.2 + j0.5
960
1.0  j1.6
1.2 + j0.3
[1]
ZS and ZL defined in Figure 1.
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
BLF6G10L-260PRN_LS-260PRN
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7.3 Typical powersweep
7.3.1 CW
Gp
(dB)
014aab123
23
70
60
22
ηD
(%)
(1)
(2)
21
50
(3)
(4)
(5)
20
40
(6)
19
30
18
20
17
10
16
0
100
200
0
400
300
PL (W)
(1) % efficiency at 960 MHz
(2) % efficiency at 940 MHz
(3) % efficiency at 920 MHz
(4) dB gain at 940 MHz
(5) dB gain at 920 MHz
(6) dB gain at 960 MHz
Fig 2.
Typical continuous wave 1 (gain; efficiency versus PO)
014aab126
24
RLin
(dB)
20
(1)
16
(2)
12
(3)
8
0
50
100
150
200
250
300
PL (W)
350
(1) dB return loss at 940 MHz
(2) dB return loss at 920 MHz
(3) dB return loss at 960 MHz
Fig 3.
Typical continuous wave 2 (return loss versus PO)
BLF6G10L-260PRN_LS-260PRN
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7.3.2 IS95
014aab124
24.5
60
(1)
Gp
(dB)
ηD
(%)
(2)
(3)
22.5
014aab127
−30
ACPR1, ACPR2
(dBc)
12
PAR
(dB)
(1)
(2)
−40
10
(3)
40
−50
8
(4)
(5)
(4)
−60
(6)
20.5
(5)
20
(7)
(8)
−70
18.5
0
50
0
150
100
6
−80
(6)
(9)
0
40
80
2
160
120
PL (AV)
4
PL (AV)
(1) % efficiency at 960 MHz
(1) 885 kHz ACPR1, dBc at 960 MHz
(2) % efficiency at 940 MHz
(2) 885 kHz ACPR1, dBc at 940 MHz
(3) % efficiency at 920 MHz
(3) 885 kHz ACPR1, dBc at 920 MHz
(4) dB gain at 940 MHz
(4) PAR, dB at 940 MHz
(5) dB gain at 920 MHz
(5) PAR, dB at 920 MHz
(6) dB gain at 960 MHz
(6) PAR, dB at 960 MHz
(7) 1980 kHz ACPR2, dBc at 940 MHz
(8) 1980 kHz ACPR2, dBc 920 MHz
(9) 1980 kHz ACPR2, dBc at 960 MHz
a. Gain and efficiency versus PO
b. ACPR1, ACPR2 and PAR versus PO
IS95, PAR = 9.8 dB at 0.01% probability of the CCDF.
Fig 4.
Typical IS95 (gain; efficiency; ACPR1, ACPR2 and PAR versus PO)
BLF6G10L-260PRN_LS-260PRN
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7.3.3 2C-WCDMA (5 MHz spacing)
014aab122
24.5
60
(1)
Gp
(dB)
ηD
(%)
(2)
(3)
22.5
(4)
014aab125
−20
ACPR1, ACPR2
(dBc)
10
(1)
PAR
(dB)
(2)
(3)
−28
9
40
−36
(5)
8
(4)
(5)
(6)
(6)
−44
20.5
(7)
20
7
(8)
(9)
−52
18.5
0
50
0
150
100
−60
6
0
50
5
150
100
PL (AV)
PL (AV)
(1) % efficiency at 960 MHz
(1) 5 MHz ACPR1, dBc at 960 MHz
(2) % efficiency at 940 MHz
(2) 5 MHz ACPR1, dBc at 940 MHz
(3) % efficiency at 920 MHz
(3) 5 MHz ACPR1, dBc at 920 MHz
(4) dB gain at 940 MHz
(4) PAR, dB at 920 MHz
(5) dB gain at 920 MHz
(5) PAR, dB at 940 MHz
(6) dB gain at 960 MHz
(6) PAR, dB at 960 MHz
(7) 10 MHz ACPR2, dBc at 940 MHz
(8) 10 MHz ACPR2, dBc 920 MHz
(9) 10 MHz ACPR2, dBc at 960 MHz
a. Gain and efficiency versus PO
b. ACPR1, ACPR2 and PAR versus PO
3GPP, Test Model 1, 64 DPCH, PAR=7.5 dB at 0.01% probability per carrier. 5 MHz carrier spacing.
Fig 5.
Typical 2C-WCDMA (gain; efficiency; ACPR1, ACPR2 and PAR versus PO)
BLF6G10L-260PRN_LS-260PRN
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8. Test information
8.1 Test circuit
Figure 6 shows the PCB test circuit layout
−
C9
R3
+ C7
+
C13
C10
−
NXP
BLF6G10L-260PRN
Input Rev 01
C1
NXP BLF6G10L-260PRN
Output Rev 01
C11
C5
C14
C12
C4
R6
014aab129
The above layout shows the test circuit used to measure the devices in production. The RF Power and Base-Stations group can
provide a more appropriate application demonstration for specific customer needs.
Fig 6.
Input and output test circuit PCBs’
8.2 Bill of materials (B.O.M.)
The following Bill of materials (Table 10) shows a list of all the components needed to
build the RF test circuit.
Table 10.
Bill of materials
Component
Description
Type
Value
Code number
Remarks
base plate
see mechanical
drawing.
input PCB
see PCB info.
output PCB
see PCB info.
15  bolt M2
brass (nickel plated)
15  washer M2
brass (nickel plated)
4  contact block
12  4 mm
rubber O-ring
Viton
17  1 mm
conductive elastomer
(“silver” rubber)
Chomerics
35  1 mm
(2x)
BLF6G10L-260PRN_LS-260PRN
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Product data sheet
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brass (milled)
CHO-SEAL 1273
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Table 10.
Bill of materials …continued
Component
Description
C4, C5, C9,
C11, C12
multilayer ceramic chip capacitor ATC 800B
Type
Value
Code number
Remarks
100 pF
multilayer ceramic chip capacitor
C1, C10, C14
multilayer ceramic chip capacitor TDK
10 F
C7, C13
electrolytic capacitor
470 F
R3, R6
chip resistor
Philips 0603
10 
copper foil strip
needed for tuning
standard components:
N-connector male
13N-50-057/1
Suhner
N-connector female
23N-50-057/1
Suhner
4  bolt M3
12 mm
chromium nickle steel
4  spring washer M3
chromium nickle steel
DC-connector 8 pin male
8140-115
Souriau (Farnell)
2  DC-connector 2 pin male
8140-12
Souriau (Farnell)
2  bolt M3
30 mm
chromium nickle steel
2  washer M3
chromium nickle steel
solid copper wire (diam. 1 mm)
30 mm
0.75 mm2
silicon isolated
flexible copper wire
SIMX-F
4  cable isolator (diam. 3 mm)
P/H30X15WE
1922.000.10134
4  cable isolator (diam. 2 mm)
P/H20X10WE
1922.000.10033
BLF6G10L-260PRN_LS-260PRN
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Product data sheet
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9. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
mm
4.7
4.2
inches
b
c
D
D1
e
E
E1
11.81 0.18 31.55 31.52
9.50
13.72
11.56 0.10 30.94 30.96
9.30
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
p
Q
q
3.30
3.05
2.26
2.01
35.56
U1
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089
0.185 0.465 0.007 1.242 1.241
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079
0.165 0.455 0.004 1.218 1.219
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
10-02-02
12-05-02
SOT539A
Fig 7.
EUROPEAN
PROJECTION
Package outline SOT539A
BLF6G10L-260PRN_LS-260PRN
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Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1
D
U1
H1
w2
1
c
D
2
E1
U2
H
E
L
3
4
w3
b
Q
e
0
5
10 mm
scale
Dimensions
Unit(1)
w2
w3
0.25
0.25
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
0.54
inches nom
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
0.01
mm
max
nom
min
A
b
E
E1
4.7
11.81
0.18 31.55 31.52
c
D
D1
9.5
9.53
e
4.2
11.56
0.10 30.94 30.96
9.3
9.27
F
H
H1
L
Q
U1
U2
1.75 17.12 25.53 3.48
2.26 32.39 10.29
1.50 16.10 25.27 2.97
2.01 32.13 10.03
13.72
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
Issue date
12-05-02
13-05-24
SOT539B
Fig 8.
sot539b_po
European
projection
Package outline SOT539B
BLF6G10L-260PRN_LS-260PRN
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10. Abbreviations
Table 11.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CDMA
Code Division Multiple Access
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
PAR
Peak-to-Average power Ratio
RF
Radio Frequency
VSWR
Voltage Standing-Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 12.
Revision history
Document ID
Release
date
BLF6G10L-260PRN_LS-260PRN v.2
20130712 Product data sheet -
Modifications:
BLF6G10L-260PRN_LS-260PRN v.1
•
•
Data sheet status
Change
notice
Supersedes
BLF6G10L-260PRN_LS-260PRN v.1
The package outline Figure 8 is updated.
Translation disclaimer added to the legal text.
20100812 Product data sheet -
BLF6G10L-260PRN_LS-260PRN
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Product data sheet
Rev. 2 — 12 July 2013
-
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12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BLF6G10L-260PRN_LS-260PRN
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
13 of 15
BLF6G10L(S)-260PRN
NXP Semiconductors
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF6G10L-260PRN_LS-260PRN
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 2 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
14 of 15
NXP Semiconductors
BLF6G10L(S)-260PRN
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.3.1
7.3.2
7.3.3
8
8.1
8.2
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
Typical powersweep . . . . . . . . . . . . . . . . . . . . . 5
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
IS95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2C-WCDMA (5 MHz spacing). . . . . . . . . . . . . . 7
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Bill of materials (B.O.M.) . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 July 2013
Document identifier: BLF6G10L-260PRN_LS-260PRN