BSS80, BSS82 PNP Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (NPN) 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E 3=C SOT23 BSS82B CLs 1=B 2=E 3=C SOT23 BSS82C CMs 1=B 2=E 3=C SOT23 BSS80 BSS82 40 60 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Collector-base voltage VCBO 60 Emitter-base voltage VEBO 5 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 77 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg 800 1 Unit V V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 220 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BSS80, BSS82 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V V(BR)CEO BSS80 40 - - BSS82 60 - - V(BR)CBO 60 - - V(BR)EBO 5 - - ICBO - - 10 nA ICBO - - 10 µA IEBO - - 10 nA Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 50 V, IE = 0 Collector cutoff current VCB = 50 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V - hFE BSS80/82B 40 - - BSS80/82C 75 - - BSS80/82B 40 - - BSS80/82C 100 - - BSS80/82B 40 - - BSS80/82C 100 - - BSS80/82B 40 - 120 BSS80/82C 100 - 300 BSS80/82B 40 - - BSS80/82C 50 - - Collector-emitter saturation voltage1) V VCEsat IC = 150 mA, IB = 15 mA - - 0.4 IC = 500 mA, IB = 50 mA - - 1.6 IC = 150 mA, IB = 15 mA - - 1.3 IC = 500 mA, IB = 50 mA - - 2.6 Base-emitter saturation voltage 1) VBEsat 1) Pulse test: t ≤=300µs, D = 2% 2 Nov-30-2001 BSS80, BSS82 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT - 250 - MHz Ccb - 6 - pF td - - 10 ns tr - - 40 tstg - - 80 tf - - 30 AC Characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Delay time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Storage time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA Test circuits Delay and rise time Storage and fall time -30 V -6 V +15 V 200 Ω Input Z 0 = 50 Ω t r < 2 ns 0 -16 V Input Z 0 = 50 Ω t r < 2ns Osc. 1 kΩ t r < 5 ns 0 -30 V 50 Ω 200 ns 1 kΩ 1 kΩ 37 Ω Osc. t r < 5 ns 50 Ω 200 ns EHN00047 EHN00048 3 Nov-30-2001 BSS80, BSS82 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCB) f = 1MHz 10 2 pF 360 mW 300 Ccb BSS 80/82 EHP00680 5 P tot 270 240 210 10 1 180 150 5 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 0 10 -1 °C 150 TS 5 10 0 5 10 1 Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 20V BSS 80/82 EHP00681 Ptot max 5 Ptot DC D= 10 3 MHz tp tp T fT T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 V CB Permissible pulse load 10 3 5 V BSS 80/82 EHP00682 5 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 0 0 5 10 1 5 10 2 mA 5 10 3 ΙC tp 4 Nov-30-2001 BSS80, BSS82 Saturation voltage IC = f (VBEsat , VCEsat) Delay time t d = f (IC) hFE = 10 Rise time tr = f (IC) 10 3 BSS 80/82 EHP00683 10 3 BSS 80/82 EHP00684 ns mA ΙC VCE 10 2 t r, t d VBE VBE = 0 V, VCC = 10 V, VBE = 20 V, VCC = 30 V 5 tr 5 td 10 2 10 1 5 5 10 0 5 10 -1 0 0.2 0.4 0.6 0.8 1.0 1.2 V 10 1 0 10 1.6 5 10 1 VBE sat , VCE sat Storage time tstg = f(IC) 10 3 Fall time t f = f (IC) BSS 80/82 EHP00685 10 3 ns t stg 5 10 2 mA 5 10 3 ΙC BSS 80/82 EHP00686 ns 5 tf VCC = 30 V 5 h FE = 20 h FE = 10 10 2 5 10 2 h FE = 10 5 h FE = 20 10 1 0 10 5 10 1 10 1 0 10 5 10 2 mA 5 10 3 ΙC 5 10 1 5 10 2 mA 5 10 3 ΙC 5 Nov-30-2001 BSS80, BSS82 DC current gain hFE = f (IC ) VCE = 10V 10 3 h FE BSS 80/82 EHP00687 5 150 ˚C 25 ˚C 10 2 -50 ˚C 5 10 1 -1 10 10 0 10 1 2 10 ΙC mA 10 3 6 Nov-30-2001