Freescale Semiconductor Technical Data Document Number: MRF19030 Rev. 12, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19030LR3 MRF19030LSR3 Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • CDMA Performance @ 1990 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz — - 47 dBc in 30 kHz BW 1.25 MHz — - 55 dBc in 12.5 kHz BW 2.25 MHz — - 55 dBc in 1 MHz BW Output Power — 4.5 Watts Avg. Power Gain — 13.5 dB Efficiency — 17% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. 1930- 1990 MHz, 30 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF19030LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF19030LSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 83.3 0.48 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 2.1 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Class 2 (Minimum) M3 (Minimum) MRF19030LR3 MRF19030LSR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 300 mA) VGS(Q) 2 3.3 4.5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs — 2 — S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss — 98.5 — pF Output Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss — 37 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss — 1.3 — pF Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Gps — 13 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) η — 36 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) IMD — - 31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) IRL — - 13 — dB Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Gps 12 13 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) η 33 36 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) IMD — - 31 - 28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) IRL — - 13 -9 dB Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 μA) On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) 1. Part is internally matched both on input and output. MRF19030LR3 MRF19030LSR3 2 RF Device Data Freescale Semiconductor VBIAS + C2 B1 B2 R1 R2 R3 C3 C4 + R4 C6 C9 B3 B4 B5 R5 R6 R7 C5 Z6 Z7 Z2 Z3 C1 Z9 Z8 Z5 Z1 + C8 L3 L2 RF INPUT VSUPPLY Z10 RF OUTPUT C7 Z4 DUT L4 C10 L1 B1 - B5 C1, C7 C2, C8 C3, C5 C4, C6 C9 C10 L1 - L4 R1 - R7 Z1 Z2 Short Ferrite Beads 10 pF Chip Capacitors 470 μF, 35 V Electrolytic Capacitors 0.1 μF Chip Capacitors 5.1 pF Chip Capacitors 22 μF Tantalum Chip Capacitor 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 12.5 nH Inductors 12 Ω Chip Resistors (0805) 0.080″ x 0.595″ Microstrip 0.080″ x 0.600″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Substrate 0.080″ x 0.480″ Microstrip 0.325″ x 0.280″ Microstrip 0.510″ x 0.200″ Microstrip 0.510″ x 0.200″ Microstrip 0.325″ x 0.280″ Microstrip 0.080″ x 0.480″ Microstrip 0.080″ x 0.530″ Microstrip 0.080″ x 0.671″ Microstrip 0.030″ x 3.00″ x 5.00″ Glass Teflon®, Arlon Figure 1. MRF19030LR3(SR3) Test Circuit Schematic MRF19030LR3 MRF19030LSR3 RF Device Data Freescale Semiconductor 3 C2 C8 C3 R1 B2 B1 R2 C5 R6 B4 C4 R3 R4 B3 R5 C9 L2 L3 C6 C7 C1 L1 R7 B5 L4 C10 MRF19030 Rev. 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF19030LR3(SR3) Test Circuit Component Layout MRF19030LR3 MRF19030LSR3 4 RF Device Data Freescale Semiconductor IRL 40 −15 η 20 −20 VDD = 26 Vdc IDQ = 300 mA, Pout = 30 W (PEP) Two−Tone Measurement, 100 kHz Tone Spacing −25 Gps 10 −30 IMD 0 1900 1940 1960 1980 f, FREQUENCY (MHz) 1920 2000 −35 2020 VDD = 26 Vdc IDQ = 350 mA, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) 40 35 −50 2.25 MHz 25 885 kHz 15 Gps −80 10 CDMA 9 Channels Forward PILOT:0, PAGING:1, TRAFFIC:8−13, SYNC:32 −90 5 0 200 mA −40 300 mA IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 2 6 8 10 4 Pout, OUTPUT POWER (WATTS Avg.) CDMA −100 12 Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power 400 mA −45 350 mA −50 300 mA −55 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing −30 3rd Order −40 −50 5th Order 7th Order −60 −70 −80 1.0 Figure 5. Intermodulation Distortion versus Output Power 100 10 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power 15 −22 14 f = 1960 MHz IDQ = 300 mA, Pout = 30 W (PEP) Two−Tone Measurement, 100 kHz Tone Spacing 13.5 400 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) −70 −20 VDD = 26 Vdc, f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing −35 350 mA 300 mA 13 300 mA 12 −60 η 20 1.25 MHz −25 14 −40 30 Figure 3. Class AB Broadband Circuit Performance −30 −30 200 mA −24 −26 Gps −28 −30 13 IMD −32 −34 12.5 VDD = 26 Vdc, f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing 11 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power −36 100 12 20 22 24 26 28 30 32 −38 34 VDD, DRAIN VOLTAGE (VOLTS) Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF19030LR3 MRF19030LSR3 RF Device Data Freescale Semiconductor 5 IMD, INTERMODULATION DISTORTION (dBc) 30 −20 45 ADJACENT CHANNEL POWER RATION (dB) −10 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 50 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS f = 1990 MHz f = 1990 MHz Zload Zsource f = 1930 MHz f = 1930 MHz Zo = 25 Ω VDD = 26 V, IDQ = 300 mA, Pout = 30 W PEP f MHz Zsource Ω Zload Ω 1930 10.57 - j7.69 5.81 - j5.01 1960 10.54 - j7.43 5.84 - j4.67 1990 10.47 - j7.21 5.84 - j4.35 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF19030LR3 MRF19030LSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X G bbb Q M T B M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. B SEE NOTE 4 1 2X K 3 B 2 2X D bbb M T A M B M N (LID) ccc M T A B M ccc M aaa M T A M B M A M F T M (INSULATOR) B M R (LID) C E T A M S (INSULATOR) SEATING PLANE aaa M T A M H B M DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A CASE 465E - 04 ISSUE F NI - 400 MRF19030LR3 2X D bbb M T A M B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 1 2 2X K ccc M T A M N E B R M (LID) ccc (LID) C M T A M B M M B M F 3 A T A (FLANGE) M aaa M T A M SEATING PLANE (INSULATOR) B M H S (INSULATOR) aaa B (FLANGE) M B T A DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE E NI - 400S MRF19030LSR3 MRF19030LR3 MRF19030LSR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF19030LR3 MRF19030LSR3 Document Number: MRF19030 8Rev. 12, 5/2006 RF Device Data Freescale Semiconductor