CMT01N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION SYMBOL 3 D SOURCE SOURCE 2 DRAIN DRAIN 1 GATE GATE SOURCE TO-92 Front View DRAIN TO-252 Front View GATE TO-251 Front View G S N-Channel MOSFET 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Symbol Value Unit A ID 1.0 IDM 9.0 VGS ±30 V VGSM ±40 V PD TO-251/252 W 50 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ TJ, TSTG -55 to 150 ℃ EAS 20 mJ θJC 1.0 ℃/W θJA 62.5 TL 260 (VDD = 100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation ℃ Page 1 CMT01N60 POWER FIELD EFFECT TRANSISTOR ORDERING INFORMATION Part Number Package CMT01N60N251 TO-251 CMT01N60N252 TO-252 CMT01N60N92 TO-92 CMT01N60GN251* TO-251 CMT01N60GN252* TO-252 CMT01N60GN92* *Note: G : Suffix for Pb Free Product TO-92 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT01N60 Characteristic Drain-Source Breakdown Voltage Symbol Min V(BR)DSS 600 Typ Max Units V (VGS = 0 V, ID = 250 μA) Drain-Source Leakage Current IDSS mA (VDS = 600 V, VGS = 0 V) 0.1 (VDS = 480 V, VGS = 0 V, TJ = 125℃) 0.3 Gate-Source Leakage Current-Forward IGSSF 100 nA IGSSR 100 nA 4.0 V (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) VGS(th) Gate Threshold Voltage 2.0 (VDS = VGS, ID = 250 μA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.6A) * RDS(on) Forward Transconductance (VDS ≧ 50 V, ID = 0.5A) * gFS Input Capacitance Ciss (VDS = 25 V, VGS = 0 V, Output Capacitance f = 1.0 MHz) Reverse Transfer Capacitance Turn-On Delay Time Rise Time (VDD = 300 V, ID = 1.0 A, VGS = 10 V, Turn-Off Delay Time RG = 18Ω) * Fall Time Total Gate Charge Gate-Source Charge (VDS = 400 V, ID = 1.0 A, Gate-Drain Charge VGS = 10 V)* Internal Drain Inductance 8.0 0.5 Ω mhos 210 Coss 28 pF pF Crss 4.2 pF td(on) 8 tr 21 ns ns td(off) 18 ns tf 24 Qg 8.5 Qgs 1.8 nC nC Qgd 4 nC LD 4.5 nH LS 7.5 nH ns 14 (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 1.0 A, VGS = 0 V, dIS/dt = 100A/μs) VSD 1.5 ton ** trr 350 V ns 500 ns * Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 2 CMT01N60 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 3 CMT01N60 POWER FIELD EFFECT TRANSISTOR 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 4 CMT01N60 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-251 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 5 CMT01N60 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-252 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 6 CMT01N60 POWER FIELD EFFECT TRANSISTOR 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 7 CMT01N60 POWER FIELD EFFECT TRANSISTOR IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan 2006/10/11 Rev. 1.6 T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 Champion Microelectronic Corporation Page 8