BAV19 thru BAV21 Small-Signal Diode Fast Switching Diodes Features Silicon Epitaxial Planar Diode For general purpose This diode is also available in other case styles including: the MiniMELF case with the type designation BAV101 to BAV103. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted.) Parameter Continuous reverse voltage Repetitive peak reverse voltage Forward DC current at Tamb=25oC (1) Rectified current (Average) half wave rectification with resist. load at Tamb=25oC (1) Repetitive peak forward current at f>50Hz, Θ=180O, Tamb=25oC (1) o Symbol Limit Unit BAV19 BAV20 BAV21 VR 100 150 200 Volts BAV19 BAV20 BAV21 VRRM 120 200 250 Volts IF 250 mA IF(AV) 200 mA IFRM 625 mA Amp Surge forward current at t<1s and Tj=25 C IFSM 1.0 Power dissipation at Tamb=25oC Ptot 500 (1) Thermal resistance junction to ambient air Junction temperature (1) Storage temperature range Notes: (1) (1) mW o RθJA 430 Tj 175 o C -65 to +175 o C TS 1. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case 632 C/W Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Forward voltage Leakage current BAV19 BAV19 BAV20 BAV20 BAV21 BAV21 Dynamic forward resistance Capacitance Reverse recovery time Symbol Test Condition Min. Typ. Max. Unit VF IF=100mA IF=200mA - - 1.00 1.25 Volts IR VR=100V VR=100V, Tj=100OC VR=150V VR=150V, Tj=100OC VR=200V VR=200V, Tj=100OC - - 100 15 100 15 100 15 nA uA nA uA nA uA γf IF=10mA - 5 - Ω Ctot VR=0V, f=1MHz - 1.5 - pF trr IF=30mA, IR=30mA Irr=3mA, RL=100Ω - - 50 ns RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted.) 633 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted.) 634