FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 100 A, 30 V RDS(ON) = 4.5 mΩ @ VGS = 10 V RDS(ON) = 6.0 mΩ @ VGS = 4.5 V • Critical DC electrical parameters specified at elevated temperature These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating D D G G D G S TO-220 TO-263AB FDP Series S FDB Series Absolute Maximum Ratings Symbol S TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current 100 A – Continuous (Note 1) 75 – Pulsed PD (Note 1) Total Power Dissipation @ TC = 25°C Derate above 25°C TJ, TSTG Operating and Storage Junction Temperature Range 300 107 W 0.7 W/°C –55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 1.4 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB7045L FDB7045L 13’’ 24mm 800 units FDP7045L FDP7045L Tube n/a 45 2004 Fairchild Semiconductor Corporation FDP7045L/FDB7045L Rev D1(W) FDP7045L/FDB7045L March 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 330 mJ 75 A Drain-Source Avalanche Ratings (Note 1) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 75 A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ± 20 V, VDS = 0 V ± 100 nA On Characteristics 30 V mV/°C 25 (Note 2) VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On– Resistance 1 1.8 3 ID(on) On–State Drain Current VGS = 10 V, ID = 50 A VGS = 4.5 V, ID = 40 A VGS= 10 V, ID = 50 A, TJ=125°C VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 5V, ID = 50 A 165 S VDS = 15 V, f = 1.0 MHz V GS = 0 V, 4357 pF 1092 pF 399 pF Ω –6 3.5 4.0 5.5 V mV/°C 4.5 6.0 7.0 50 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VGS = 15 mV, f = 1.0 MHz 1.4 VDD = 15V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 16 29 ns 13 24 ns (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 74 119 ns tf Turn–Off Fall Time 41 66 ns 41 58 nC Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 5 V ID = 50 A, 12 nC 14 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 50 A IF = 50 A, diF/dt = 100 A/µs (Note 1) 0.91 75 A 1.2 V 48 nS 42 nC Notes: 1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDP7045L/FDB7045L Rev D1(W) FDP7045L/FDB7045L Electrical Characteristics FDP7045L/FDB7045L Typical Characteristics 1.8 100 VGS = 3.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10V 6.0V 75 4.5V 3.0V 50 25 2.5V 0 0 1.4 3.5V 1.2 4.0V 4.5V 5.0V 10V 0 2 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.014 RDS(ON), ON-RESISTANCE (OHM) ID = 50A VGS =10V 1.6 1.4 1.2 1 0.8 ID = 50A 0.012 0.01 0.008 TA = 125oC 0.006 0.004 TA = 25oC 0.002 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 2 175 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 90 1000 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 10V 75 ID, DRAIN CURRENT (A) 6.0V 1 0.8 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 60 45 TA = 125oC 30 o 25 C 15 -55oC 100 o TA = 125 C 10 25oC 1 o -55 C 0.1 0.01 0.001 0 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP7045L/FDB7045L Rev D1(W) FDP7045L/FDB7045L Typical Characteristics 6000 f = 1MHz VGS = 0 V VDS = 10V ID = 50A 20V 5000 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 4 Ciss 4000 3000 2000 2 1000 0 0 Coss Crss 0 10 20 30 40 50 60 70 0 80 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 5000 P(pk), PEAK TRANSIENT POWER (W) 10µs ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance Characteristics. 1000 RDS(ON) LIMIT 100µs 1mS 10mS 100 100m DC 10 VGS = 10V SINGLE PULSE o RθJC = 1.4 C/W o TA = 25 C 1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJC = 1.4°C/W TA = 25°C 4000 3000 2000 1000 0 0.00001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJC(t) = r(t) * RθJA RθJC = 1.4 °C/W 0.2 0.1 P(pk 0.1 t1 t2 0.05 0.02 0.01 TJ - TA = P * RθJC(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. FDP7045L/FDB7045L Rev D1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I10