Formosa MS Chip Silicon Rectifier HFM101-M THRU HFM107-M Ultra fast recovery type Features SOD-123 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. For surface mounted applications. 0.071(1.8) 0.055(1.4) Exceeds environmental standards of MIL-S-19500 / 228 0.110(2.8) 0.094(2.4) Low leakage current. 0.063(1.6) 0.055(1.4) 0.035(0.9) Typ. Mechanical data 0.035(0.9) Typ. Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC SOD-123 / MINI SMA Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting Position : Any Weight : 0.04 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol Forward rectified current Ambient temperature = 50 C Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) UNIT IO 1.0 A IFSM 30 A 5.0 uA 25o C VR = VRRM TA = Reverse current Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage TSTG *1 V RMS (V) (V) *2 VR *3 (V) HFM101-M H1 50 35 50 HFM102-M H2 100 70 100 HFM103-M H3 200 140 200 HFM104-M H4 300 210 300 HFM105-M H5 400 280 400 HFM106-M H6 600 420 600 HFM107-M H7 800 560 800 VF *4 (V) T RR *5 (nS) uA o 42 CJ Storage temperature V RRM TYP. 150 Junction to ambient MARKING CODE MIN. IR VR = VRRM TA = 100o C Thermal resistance SYMBOLS MAX. o C / w 20 -55 pF +150 o C Operating temperature ( o C) 1.0 *1 Repetitive peak reverse voltage 50 -55 to +150 1.3 *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage 1.7 75 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (HFM101-M THRU HFM107-M) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD CHARACTERISTICS 5-M FM 10 7- M FM 10 1-M ~H FM 10 H FM 10 6M ~H 4-M ~H HF M1 0 1.0 HF M1 0 .1 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) Tj=25 C Pulse Width 300us 1% Duty Cycle .01 .6 .8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PEAK FORWARD SURGE CURRENT,(A) .001 .4 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PULSE GENERATOR (NOTE 2) ( ) 30 24 18 Sine Wave 12 JEDEC method 6 1 5 (+) 1W NONINDUCTIVE 8.3ms Single Half Tj=25 C 0 50 10 100 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 175 trr JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) 3-M AVERAGE FORWARD CURRENT,(A) 10 | | | | | | | | +0.5A 0 -0.25A -1.0A 120 100 80 60 40 20 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100