'97.4.7 MITSUBISHI LSIs M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL, -45XL,-55XL,-70XL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION FEATURE Type Access Power supply current time Active Stand-by (max) (max) (max) M5M5256DP, FP,VP,RV-45LL 45ns M5M5256DP, FP,VP,RV-55LL 55ns 20µA (Vcc=5.5V) M5M5256DP, FP,VP,RV-70LL 70ns 55mA (Vcc=5.5V) M5M5256DP, FP,VP,RV-45XL 5µA 45ns (Vcc=5.5V) M5M5256DP, FP,VP,RV-55XL 55ns 0.05µA M5M5256DP, FP,VP,RV-70XL 70ns (Vcc=3.0V, Typical) •Single +5V power supply •No clocks, no refresh •Data-Hold on +2.0V power supply •Directly TTL compatible : all inputs and outputs •Three-state outputs : OR-tie capability •/OE prevents data contention in the I/O bus •Common Data I/O •Battery backup capability •Low stand-by current··········0.05µA(typ.) A14 A12 1 2 A7 3 A6 4 A5 5 A4 6 7 A3 A2 8 A1 9 A0 10 DQ1 11 DQ2 12 DQ3 13 GND 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /W A13 A8 A9 A11 /OE A10 /S DQ8 DQ7 DQ6 DQ5 DQ4 Outline 28P4 (DP) 28P2W-C (DFP) 22 /OE 23 A11 24 A9 25 A8 26 A13 27 /W 28Vcc 1 A14 2 A12 3 A7 4 A6 5 A5 6 A4 7 A3 M5M5256DVP A10 21 /S 20 DQ8 19 DQ7 18 DQ6 17 DQ5 16 DQ415 GND 14 DQ3 13 DQ2 12 DQ1 11 A0 10 A1 9 A2 8 Outline 28P2C-A (DVP) PACKAGE M5M256DP : 28 pin 600 mil DIP M5M5256DFP : 28 pin 450 mil SOP M5M5256DVP,RV : 28pin 8 X 13.4 mm2 PIN CONFIGURATION (TOP VIEW) M5M5256DP,FP The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board. TSOP APPLICATION Small capacity memory units 7 A3 6 A4 5 A5 4 A6 3 A7 2 A12 1 A14 28 Vcc 27 /W 26 A13 25 A8 24 A9 23 A11 22 /OE M5M5256DRV A2 8 A1 9 A0 10 DQ1 11 DQ2 12 DQ3 13 GND 14 DQ4 15 DQ5 16 DQ6 17 DQ7 18 DQ8 19 /S 20 A10 21 Outline 28P2C-B (DRV) MITSUBISHI ELECTRIC 1 '97.4.7 MITSUBISHI LSIs M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL, -45XL,-55XL,-70XL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM FUNCTION The operation mode of the M5M5256DP,FP,VP,RV is determined by a combination of the device control inputs /S, /W and /OE. Each mode is summarized in the function table. A write cycle is executed whenever the low level /W overlaps with the low level /S. The address must be set up before the write cycle and must be stable during the entire cycle. The data is latched into a cell on the trailing edge of /W, /S, whichever occurs first, requiring the set-up and hold time relative to these edge to be maintained. The output enable /OE directly controls the output stage. Setting the /OE at a high level,the output stage is in a high-impedance state, and the data bus contention problem in the write cycle is eliminated. A read cycle is executed by setting /W at a high level and /OE at a low level while /S are in an active state. When setting /S at a high level, the chip is in a non-selectable mode in which both reading and writing are disabled. In this mode, the output stage is in a high-impedance state, allowing OR-tie with other chips and memory expansion by /S. The power supply current is reduced as low as the stand-by current which is specified as Icc3 or Icc4, and the memory data can be held at +2V power supply, enabling battery back-up operation during power failure or power-down operation in the non-selected mode. FUNCTION TABLE /S /W /OE Mode DQ Icc H X X Non selection High-impedance Stand-by L L X Write DIN Active L H L Read DOUT Active L H H High-impedance Active 1 X 8BIT A 12 22 A7 3 A6 4 A5 5 A4 6 A3 7 8 A1 9 A0 10 A 10 21 A 11 23 A9 24 WRITE CONTROL INPUT /W 27 CHIP SELECT INPUT 20 /S OUTPUT ENABLE /OE INPUT COLUMN DECODER A2 (512 ROWS X 512 COLUMNS) CLOCK GENERATOR 22 OUTPUT BUFFER A 14 11 DQ1 12 DQ2 13 DQ3 15 DQ4 16 DQ5 17 DQ6 18 DQ7 19 DQ8 28 VCC (5V) 14 GND (0V) DATA I/O DATA INPUT BUFFER 32768 WORD ROW DECODER 26 ADDRESS INPUT BUFFER 25 A 13 ADDRESS INPUT BUFFER ADDRESS INPUT A8 SENSE ANPLIFIER BLOCK DIAGRAM MITSUBISHI ELECTRIC 2 '97.4.7 MITSUBISHI LSIs M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL, -45XL,-55XL,-70XL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Supply voltage Vcc VI VO Pd Topr Tstg Conditions Input voltage Output voltage Power dissipation Operating temperature Storage temperature Ratings -0.3*~7.0 -0.3*~Vcc+0.3 With respect to GND Unit V V V mW (Max 7.0) 0~Vcc 700 0~70 -65~150 Ta=25°C °C °C * -3.0V in case of AC ( Pulse width ≤ 30ns ) DC ELECTRICAL CHARACTERISTICS Symbol (Ta=0~70°C, Vcc=5V±10%, unless otherwise noted) Parameter Limits Test conditions Min Typ Max Unit 2.2 Vcc +0.3 V -0.3 0.8 V VIH High-level input voltage VIL Low-level input voltage VOH1 High-level output voltage 1 IOH=-1mA 2.4 V VOH2 High-level output voltage 2 IOH=-0.1mA Vcc -0.5 V VOL II Low-level output voltage IOL=2mA 0.4 V Input current VI=0~Vcc ±1 uA IO Output current in off-state /S=VIH or or /OE=VIH, VI/O=0~Vcc ±1 uA Icc1 Active supply current Icc2 35 50 (AC, MOS level ) 45ns /S≤0.2V, Other inputs<0.2V or >Vcc-0.2V 55ns Output-open Min. cycle 70ns 30 25 45 40 Active supply current /S=VIL, other inputs=VIH or VIL Output-open Min. cycle 45ns 55ns 35 30 55 50 70ns 25 45 (AC, TTL level ) Icc3 Stand-by current /S≥Vcc-0.2V, other inputs=0~Vcc Icc4 Stand-by current /S=VIH,other inputs=0~Vcc -LL mA mA 20 -XL 0.1 5 3 uA mA * -3.0V in case of AC ( Pulse width ≤ 30ns ) CAPACITANCE Symbol CI CO (Ta=0~70°C, Vcc=5V±10%, unless otherwise noted) Parameter Input capacitance Output capacitance Test conditions VI=GND, VI=25mVrms, f=1MHz VO=GND,VO=25mVrms, f=1MHz Min Limits Typ Max 6 8 Unit pF pF Note 0: Direction for current flowing into an IC is positive (no mark). 1: Typical value is one at Ta = 25°C. 2: CI, CO are periodically sampled and are not 100% tested. MITSUBISHI ELECTRIC 3 '97.4.7 MITSUBISHI LSIs M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL, -45XL,-55XL,-70XL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM AC ELECTRICAL CHARACTERISTICS (1) MEASUREMENT CONDITIONS (Ta = 0~70°C, Vcc=5V±10%, unless otherwise noted ) Input pulse level···················VIH=2.4V,VIL=0.6V Input rise and fall time··········5ns Reference level····················VOH=VOL=1.5V Output loads·························Fig.1,CL=30pF (-45LL,-45XL ) CL=50pF (-55LL,-55XL ) CL=100pF (-70LL,-70XL ) CL=5pF (for ten,tdis) Transition is measured ±500mV from steady state voltage. (for ten,tdis) Vcc 1.8kΩ DQ 990Ω CL (Including scope and JIG) Fig.1 Output load (2) READ CYCLE Symbol Parameter tCR ta(A) ta(S) ta(OE) tdis(S) tdis(OE) ten(S) ten(OE) tV(A) Read cycle time Address access time Chip select access time Output enable access time Output disable time after /S high Output disable time after /OE high Output enable time after /S low Output enable time after /OE low Data valid time after address -45LL, XL Min Max 45 45 45 25 15 15 5 5 10 Limits -55LL, XL Min Max 55 55 55 30 20 20 5 5 10 -70LL, XL Min Max 70 70 70 35 25 25 5 5 10 Unit ns ns ns ns ns ns ns ns ns (3) WRITE CYCLE -45LL, XL Min Max tCW 45 Write cycle time tw(W) Write pulse width 35 tsu(A) Address setup time 0 tsu(A-WH) Address setup time with respect to /W high 40 tsu(S) Chip select setup time 40 tsu(D) Data setup time 20 th(D) Data hold time 0 trec(W) Write recovery time 0 tdis(W) Output disable time from /W low 15 tdis(OE) Output disable time from /OE high 15 ten(W) Output enable time from /W high 5 ten(OE) Output enable time from /OE low 5 Symbol Parameter MITSUBISHI ELECTRIC Limits -55LL, XL Min Max 55 40 0 50 50 25 0 0 20 20 5 5 -70LL, XL Min Max 70 50 0 65 65 30 0 0 25 25 5 5 Unit ns ns ns ns ns ns ns ns ns ns ns ns 4 '97.4.7 MITSUBISHI LSIs M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL, -45XL,-55XL,-70XL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM (4) TIMING DIAGRAMS Read cycle tCR A0~14 ta(A) tv (A) ta (S) /S (Note 3) ta (OE) tdis (S) (Note 3) tdis (OE) (Note 3) ten (OE) /OE (Note 3) ten (S) DATA VALID DQ1~8 /W = "H" level Write cycle (/W control mode) tCW A0~14 tsu (S) /S (Note 3) (Note 3) tsu (A-WH) /OE tsu (A) tw (W) trec (W) /W tdis (W) tdis (OE) ten (W) ten(OE) DATA IN STABLE DQ1~8 (Note 3) (Note 3) tsu (D) MITSUBISHI ELECTRIC th (D) 5 '97.4.7 MITSUBISHI LSIs M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL, -45XL,-55XL,-70XL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM Write cycle ( /S control mode) tCW A0~14 tsu (A) tsu (S) trec (W) /S (Note 5) /W (Note 4) (Note 3) DQ1~8 tsu (D) th (D) (Note 3) DATA IN STABLE Note 3 : Hatching indicates the state is "don't care". 4 : Writing is executed in overlap of /S and /W low. 5 : If /W goes low simultaneously with or prior to /S, the outputs remain in the high impedance state. 6 : Don't apply inverted phase signal externally when DQ pin is output mode. 7 : ten, tdis are periodically sampled and are not 100% tested. MITSUBISHI ELECTRIC 6 '97.4.7 MITSUBISHI LSIs M5M5256DP,FP,VP,RV -45LL,-55LL,-70LL, -45XL,-55XL,-70XL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Vcc (PD) (Ta = 0~70°C, Vcc=5V±10%, unless otherwise noted) Parameter Test conditions Min 2 2.2 Power down supply voltage 2.2V≤VCC(PD) VI (/S) Chip select input /S Icc (PD) Power down supply current 2V≤VCC(PD)≤2.2V Limits Typ Max V V VCC(PD) Vcc = 3V,/S≥Vcc-0.2V, Other inputs=0~Vcc Unit V 10 -LL (Note 7) -XL 0.05 2 uA (Note 8) Note7: ICC (PD) = 1uA in case of Ta = 25°C Note8: ICC (PD) = 0.2uA in case of Ta = 25°C (2) TIMING REQUIREMENTS (Ta = 0~70°C, Vcc=5V±10%, unless otherwise noted ) Symbol tsu (PD) trec (PD) Parameter Test conditions Power down set up time Power down recovery time Min Limits Typ Max Unit ns ns 0 tCR (3) POWER DOWN CHARACTERISTICS /S control mode Vcc tsu (PD) 4.5V 4.5V 2.2V 2.2V /S trec (PD) /S≥Vcc-0.2V MITSUBISHI ELECTRIC 7