PolarHVTM HiPerFET Power MOSFETs IXFH 22N60P IXFV 22N60P IXFV 22N60PS VDSS = 600 V ID25 = 22 A RDS(on) ≤ 350 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGS Continuous ±30 V VGSM Tranisent ±40 V ID25 TC = 25° C 22 A IDM TC = 25° C, pulse width limited by TJM 66 A IAR TC = 25° C 22 A EAR TC = 25° C 40 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤150° C, RG = 4 Ω 20 V/ns PD TC = 25° C 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md FC Mounting torque Mounting Force Weight TO-247 PLUS220 & PLUS220SMD (TO-247) (PLUS220) BVDSS VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125° C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved V 5.5 V ±100 nA 25 250 µA µA 350 mΩ D (TAB) S G D S D (TAB) PLUS220SMD (IXFV...S) G S G = Gate S = Source g g Characteristic Values Min. Typ. Max. D PLUS220 (IXFV) 1.13/10 Nm/lb.in. 11..65/2.5..15 Nm/lb. 6 4 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) G D (TAB) D = Drain TAB = Drain Features l Fast intrinsic diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect Advantages Easy to mount l Space savings l High power density l DS99315E(03/06) IXFH 22N60P IXFV22N60P IXFV 22N60PS Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 20 S 3600 pF 305 pF Crss 38 pF td(on) 20 ns Ciss Coss 15 VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 20 ns td(off) RG = 4 Ω (External) 60 ns tf 23 ns Qg(on) 58 nC 20 nC 22 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.31 ° C/W RthJC ° C/W 0.21 RthCS Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 22 A ISM Repetitive 66 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 26A -di/dt = 100 A/µs VR = 100V, VGS = 0 V 200 ns QRM TO-247 AD (IXFH) Outline 1.0 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC µC IXYS reserves the right to change limits, test conditions, and dimensions. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220 (IXFV) Outline PLUS220SMD (IXFV_S) Outline IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 2 - Drain Tab - Drain 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 22N60P IXFV22N60P IXFV 22N60PS Fig. 1. Output Characte ris tics Fig. 2. Exte nde d Output Characte ris tics @ 25º C @ 25º C 22 45 V GS = 10V 20 18 9V 8V 35 16 7.5V 30 14 I D - Amperes I D - Amperes V GS = 10V 40 8V 7.5V 12 10 8 7V 6 25 20 7V 15 10 4 6V 2 6.5V 5 0 6V 0 0 1 2 3 4 5 6 7 8 9 0 3 6 9 V D S - V olts Fig. 3. Output Characte ris tics 22 18 21 24 27 30 3.4 V GS = 10V 20 3.1 R D S ( o n ) - Normalized 8V 7V 18 16 I D - Amperes 15 V D S - V olts Fig. 4. RDS(on ) Norm alize d to ID = 11A V alue vs . Junction Te m pe rature @ 125º C 14 6.5V 12 10 8 6V 6 4 5.5V 5V 2 V GS = 10V 2.8 2.5 2.2 I D = 22A 1.9 1.6 I D = 11A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 V D S - V olts 14 16 18 -50 20 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to Fig. 6. Drain Curre nt vs . Cas e Te m pe rature ID = 11A V alue vs . Dr ain Curr e nt 24 3 2.8 V GS = 10V 2.6 TJ = 125 º C 20 2.4 2.2 I D - Amperes R D S ( o n ) - Normalized 12 2 1.8 1.6 16 12 8 1.4 1.2 4 TJ = 25 º C 1 0.8 0 0 5 10 15 20 25 I D - A mperes © 2006 IXYS All rights reserved 30 35 40 45 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 22N60P IXFV22N60P IXFV 22N60PS Fig. 8. Trans conductance 30 27 27 24 24 21 21 - Siemens 30 15 12 TJ = 125 º C 9 25 º C 6 TJ = -40 º C 25 º C 125 º C 18 15 fs 18 12 g I D - Amperes Fig. 7. Input Adm ittance 9 6 -40 º C 3 3 0 0 4.5 5 5.5 6 6.5 7 7.5 8 0 3 6 9 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 18 21 24 27 30 10 60 V G S - Volts 50 I S - Amperes 15 Fig. 10. Gate Char ge 70 40 30 TJ = 125 º C 9 V DS = 300V 8 I D = 11A 7 I G = 10m A 6 5 4 3 20 TJ = 25 º C 10 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 V S D - V olts 10 20 30 40 50 60 Q G - nanoCoulombs Fig. 12. For w ard-Bias Safe Ope rating Are a Fig. 11. Capacitance 100 10000 f = 1MH z R DS(on) Lim it C iss 1000 I D - Amperes Capacitance - picoFarads 12 I D - A mperes C oss 100 25µs 100µs 10 1m s 10m s TJ = 150ºC C rs s DC TC = 25ºC 1 10 0 5 10 15 20 25 V D S - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXFH 22N60P IXFV22N60P IXFV 22N60PS Fig. 13. Maxim um Transient Therm al Resistance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2006 IXYS All rights reserved IXYS REF: T_22N60P (6J) 02-17-06-B