APTM100A13DG Phase leg with Series diodes MOSFET Power Module Application • Zero Current Switching resonant mode VBUS Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration G1 OUT 0/VBUS S2 G1 VBUS 0/VBUS Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant OUT S1 S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 65 49 240 ±30 156 1250 24 30 1300 Unit V A V mΩ W A December, 2006 G2 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM100A13DG – Rev 2 S1 VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C APTM100A13DG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 32.5A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 130 3 Min VGS = 10V VBus = 500V ID = 65A Test Conditions IF = 120A VR = 800V di/dt = 400A/µs Max Unit nF nC 9 9 50 24 mJ 0.46 4.4 mJ 0.57 Typ Tj = 25°C Tj = 125°C Max 150 600 Tj = 125°C 120 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C Tj = 25°C Tj = 125°C 350 1120 5800 www.microsemi.com ns 2.13 Min 1200 T c = 100°C IF = 120A IF = 240A IF = 120A Unit µA mA mΩ V nA 363 Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 65A R G = 0.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 65A, R G = 0.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 65A, R G = 0.5Ω VR=1200V Typ 15.2 2.6 0.42 562 Max 600 2 156 5 ±450 75 Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage Typ Unit V µA A 3 V December, 2006 IDSS Test Conditions VGS = 0V,VDS= 1000V ns nC 2-6 APTM100A13DG – Rev 2 Symbol Characteristic APTM100A13DG Thermal and package characteristics Symbol Characteristic Min Transistor Series diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.10 0.46 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM100A13DG – Rev 2 December, 2006 SP6 Package outline (dimensions in mm) APTM100A13DG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 360 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 7V VGS=15&10V 150 6.5V ID, Drain Current (A) 120 6V 90 60 5.5V 30 5V 300 240 180 120 T J=25°C 60 0 TJ=125°C 0 4 8 12 16 20 24 28 0 ID, DC Drain Current (A) V GS=10V 1.2 V GS=20V 1.1 3 4 5 6 7 8 9 10 70 Normalized to VGS =10V @ 32.5A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1 0.9 0.8 60 50 40 30 20 10 0 0 30 60 90 120 150 180 25 ID, Drain Current (A) 50 75 100 125 150 December, 2006 RDS(on) Drain to Source ON Resistance T J=-55°C 0 TC, Case Temperature (°C) www.microsemi.com 4-6 APTM100A13DG – Rev 2 I D, Drain Current (A) 180 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=32.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) 1.0 0.9 0.8 0.7 100µs limited by RDSon 100 1ms Single pulse TJ=150°C TC=25°C 10 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 0 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 10 100 1000 VDS , Drain to Source Voltage (V) 14 ID=65A TJ=25°C 12 10 V DS =200V V DS =500V 8 VDS=800V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 0 120 240 360 480 600 720 840 Gate Charge (nC) December, 2006 VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 5-6 APTM100A13DG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100A13DG APTM100A13DG Delay Times vs Current t d(off) 50 40 40 tr and tf (ns) VDS=667V RG=0.5Ω T J=125°C L=100µH 30 20 t d(on) 30 20 10 10 0 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 I D, Drain Current (A) ID, Drain Current (A) 90 100 Switching Energy vs Gate Resistance Switching Energy vs Current 6 VDS=667V RG=0.5Ω T J=125°C L=100µH 7 6 5 Switching Energy (mJ) 8 Eon 4 3 2 Eoff 1 0 5 Eon 4 V DS=667V ID=65A T J=125°C L=100µH 3 2 Eoff 1 0 20 30 40 50 60 70 80 90 100 0 ID, Drain Current (A) 1 2 3 4 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 250 ZCS 200 Hard switching 150 I DR, Reverse Drain Current (A) 300 VDS=667V D=50% RG=0.5Ω T J=125°C T C=75°C 100 50 0 10 20 30 40 50 ID, Drain Current (A) TJ=150°C 100 T J=25°C 10 1 60 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) December, 2006 Switching Energy (mJ) tr 0 20 Frequency (kHz) tf VDS=667V RG=0.5Ω T J=125°C L=100µH Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM100A13DG – Rev 2 td(on) and td(off) (ns) Rise and Fall times vs Current 50 60